PNP SILICON LOW POWER TRANSISTOR

PNP SILICON LOW POWER TRANSISTOR Qualified per MIL-PRF-19500/354

Small Signal Transistors

Small Signal Transistors TO-46 Case

Chip Type 2C2605 Geometry 0220 Polarity NPN

Chip type 2C2605 by Semicoa Semiconductors provides performance similar to these devices. Product Summary: APPLICATIONS: Designed for high speed switching applications. Features: • High speed switching capabilities

PNP Silicon Low-Power -60V, -0.03A

This specification covers the performance requirements for PNP, silicon, low-power 2N2604 and 2N2605 transistors for use in low noise level amplifier applications. Four levels of product assurance (JAN, JANTX, JANTXV and JANS) are provided for each encapsulated device type MIL-PRF-19500/354 and two

PNP Silicon Low-Power -60V, -0.03A

This specification covers the performance requirements for PNP, silicon, low-power 2N2604 and 2N2605 transistors for use in low noise level amplifier applications. Four levels of product assurance (JAN, JANTX, JANTXV and JANS) are provided for each encapsulated device type MIL-PRF-19500/354 and two

Chip Type 2C2605 Geometry 0220 Polarity NPN

Chip type 2C2605 by Semicoa Semiconductors provides performance similar to these devices. Product Summary: APPLICATIONS: Designed for high speed switching applications. Features: • High speed switching capabilities

Small Signal Transistors

Small Signal Transistors TO-46 Case

PNP SILICON LOW POWER TRANSISTOR

PNP SILICON LOW POWER TRANSISTOR Qualified per MIL-PRF-19500/354

P-CHANNEL JFET

GENERAL INFORMATION/CROSS REFERENCES

P-CHANNEL J-FET

P-CHANNEL J-FET Equivalent To MIL-PRF-19500/295

Junction FETs Low Frequency/ Low Noise

N-Channel 2N4220 2N4221 2N4222 2N4338 2N4339 2N4340 2N4341 2N5457 2N5458 2N5459 2N5556 2N5557 PN3685 PN3686 PN3687 PN4302 PN4303 PN4304 P-CHANNEL 2N2608 2N2609 2N3820 2N5020 2N5460 2N5461 2N5462 PN4360

P-CHANNEL JFET

GENERAL INFORMATION/CROSS REFERENCES

P-Channel Silicon Junction Field-Effect Transistor

P-Channel Silicon Junction Field-Effect Transistor • Low-Level Choppers • Data Switches • Commutators

P-Channel Silicon Junction Field-Effect Transistor

P-Channel Silicon Junction Field-Effect Transistor • Low-Level Choppers • Data Switches • Commutators

20 STERN AVE SPRINGFIELD,NEW JERSEY 07081 U.S.A

GENERAL DESCRIPTION - The 2N2609 is a silicon Planar* P-channel field-effect transistor designed primarlly for low power audio-frequency applications in industrial service.

Junction FETs Low Frequency/ Low Noise

N-Channel 2N4220 2N4221 2N4222 2N4338 2N4339 2N4340 2N4341 2N5457 2N5458 2N5459 2N5556 2N5557 PN3685 PN3686 PN3687 PN4302 PN4303 PN4304 P-CHANNEL 2N2608 2N2609 2N3820 2N5020 2N5460 2N5461 2N5462 PN4360

P-CHANNEL JFET

GENERAL INFORMATION/CROSS REFERENCES

P-CHANNEL J-FET

P-CHANNEL J-FET Equivalent To MIL-PRF-19500/296

SCRs

SCRs (Silicon Controlled Rectifiers)

PHASE CONTROL SCR

PHASE CONTROL SCR Available Non-RoHS (standard) or RoHS compliant (add PBF suffix). Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number.

Dual Transistors

Dual Transistors PD@ TA=25°C=600mW Total (Both Die Equal Power)

DUAL AMPLIFIER TRANSISTORS NPN SILICON

DUAL AMPLIFIER TRANSISTORS NPN SILICON

Dual Transistors

Dual Transistors PD@ TA=25°C=600mW Total (Both Die Equal Power)

Dual Transistors

Dual Transistors PD@ TA=25°C=600mW Total (Both Die Equal Power)

DUAL AMPLIFIER TRANSISTORS NPN SILICON

DUAL AMPLIFIER TRANSISTORS NPN SILICON

Dual Transistors

Dual Transistors PD@ TA=25°C=600mW Total (Both Die Equal Power)

DUAL AMPLIFIER TRANSISTORS NPN SILICON

Dual Transistors

Dual Transistors PD@ TA=25°C=600mW Total (Both Die Equal Power)

DUAL AMPLIFIER TRANSISTORS NPN SILICON

Dual Transistors

Dual Transistors PD@ TA=25°C=600mW Total (Both Die Equal Power)

Small Signal Transistors

Small Signal Transistors TO-18 Case (Continued)

MU4893

MU4893

Silicon unijunction transistor

Silicon unijunction transistor

Silicon PN Unijuction Transistor

Silicon PN Unijunction Transistor ... designed for use in pulse and timing circuits, sensing circuits and thyristor trigger circuits.

SILICON PN UNIVUNCTION TRANSISTOR

DESCRIPTION: The 2N2646 is a Unijunction Transistor Used in General Purpose Pulse, Timing, Sense and Trigger Applications.

SILICON UNIJUNCTION TRANSISTORS

SILICON UNIJUNCTION TRANSISTORS Silicon Planar Unijunction Transistors have a structure resulting in lower saturation voltage, peak-point current and valley current as zell as a much higher base-one peak pulse voltage. In addition, these devices are much faster switches. The 2N2646 is inten

Unijunction Transistor

Description: A TO-18, PN, Unijunction Transistor designed for use in pulse and timing circuits, sensing circuits, and thyristor trigger circuits. Features: •Low peak point current : 2μA (Max.) •Low emitter reverse current : 200nA (Max.) •Passivated surface for reliability and uniformity

20 STERN AVE SPRINGFIELD,NEW JERSEY 07081 U.S.A

Silicon Unijunction Transistors The General Electric 2N2646 and 2N2647 Silicon Unijunction Transistors have an entirely new structure resulting in lower saturation voltage, peak-point current and valley current as well as a much higher base-one peak pulse Voltage. In addition, these devices are m

SILICON UNIJONCTION TRANSISTORS

[DIGITRON] SILICON UNIJUNCTION TRANSISTOR Available Non-RoHS (standard) or RoHS compliant (add PBF suffix). Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number.

SILICON UNIJUNCTION TRANSISTOR

SILICON UNIJUNCTION TRANSISTOR Available Non-RoHS (standard) or RoHS compliant (add PBF suffix). Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number.

SILICON UNIJUNCTION TRANSISTOR

SILICON UNIJUNCTION TRANSISTOR Available Non-RoHS (standard) or RoHS compliant (add PBF suffix). Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number.

20 STERN AVE SPRINGFIELD,NEW JERSEY 07081 U.S.A

Silicon Unijunction Transistors The General Electric 2N2646 and 2N2647 Silicon Unijunction Transistors have an entirely new structure resulting in lower saturation voltage, peak-point current and valley current as well as a much higher base-one peak pulse Voltage. In addition, these devices are m

SILICON UNIJONCTION TRANSISTORS

[DIGITRON] SILICON UNIJUNCTION TRANSISTOR Available Non-RoHS (standard) or RoHS compliant (add PBF suffix). Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number.

Transistor Unijunction

Description: A PN Unijunction Transistor designed for use in pulse and timing circuits, sensing circuits, and thyristor trigger circuits. Features: • Low peak point current: 2µA (Max.) • Low emitter reverse current: 200nA (Max.) • Passivated surface for reliability and uniformity

SILICON UNIJUNCTION TRANSISTORS

SILICON UNIJUNCTION TRANSISTORS Silicon Planar Unijunction Transistors have a structure resulting in lower saturation voltage, peak-point current and valley current as zell as a much higher base-one peak pulse voltage. In addition, these devices are much faster switches. The 2N2646 is inten

MU4893

MU4893

Silicon PN Unijuction Transistor

Silicon PN Unijunction Transistor ... designed for use in pulse and timing circuits, sensing circuits and thyristor trigger circuits.

Small Signal Transistors

Small Signal Transistors TO-18 Case (Continued)

Dual Transistors

Dual Transistors PD@ TA=25°C=600mW Total (Both Die Equal Power)

Dual Transistors

Dual Transistors PD@ TA=25°C=600mW Total (Both Die Equal Power)

SMALL SIGNAL TRANSISTORS

Small Signal Transistors TO-39 Case (Continued)

20 STERN AVE

Small Signal Transistors

Small Signal Transistors

Small Signal Transistors

Small Signal Transistors

Small Signal Transistors

20 STERN AVE.

SILICON PLANAR NPN POWER TRANSISTORS

Small Signal Transistors

Small Signal Transistors

Small Signal Transistors

Small Signal Transistors

SMALL SIGNAL TRANSISTORS

Small Signal Transistors TO-39 Case (Continued)