DUAL HIGH SPEED, MEDIUM POWER, NPN SWITCHING TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE

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DUAL HIGH SPEED, MEDIUM POWER, NPN SWITCHING TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE

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Bipolar Junction Transistors

HIGH-FREQUENCY SATURATED SWITCH

DESCRIPTION The 2N2369 is a silicon planar epitaxial NPN transistorin JedecTO-18 metal case. It is designed specifically for high-speed saturated switching applications at current levels from 100 µA to 100 mA.

NPN switching transistor

DESCRIPTION NPN switching transistor in a TO-18 metal package. FEATURES • Low current (max. 200 mA) • Low voltage (max. 15 V). APPLICATIONS • High-speed switching • VHF amplification.

NPN SILICON PLANAR EPITAXIAL TRANSISTORS

APPLICATIONS 2N2369/A are NPN Silicon High Speed Saturated Switching, Transistors With Low Power & High Speed Switching Applications.

Switching Transistors

Switching Transistors NPN Silicon

Bipolar NPN Device in a Hermetically sealed TO18 Metal Package.

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DUAL HIGH SPEED, MEDIUM POWER, NPN SWITCHING TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE

文件：21.27 Kbytes Page：2 Pages