NPN Silicon Low-Power 30V to 60V, 0.5A

This specification covers the performance requirements for NPN, silicon, low-power, 2N1711 and 2N1890 transistors. Three levels of product assurance (JAN, JANTX and JANTXV) are provided for each device type as specified in MIL-PRF-19500/225. The device packages for the encapsulated device types are as follows: (2N1711 and 2N1890) Three terminal round metal can TO-205AD (formerly TO-39) and TO-205-AA (formerly TO-5).;

包装：散装 描述：NPN TRANSISTOR 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

NPN medium power transistor

DESCRIPTION NPN medium power transistor in a TO-39 metal package. FEATURES • High current (max. 500 mA) • Low voltage (max. 50 V). APPLICATIONS • DC and wideband amplifiers.

GENERAL PURPOSE TRANSISTOR (NPN SILICON)

GENERAL PURPOSE TRANSISTOR (NPN SILICON)

GENERAL PURPOSE TRANSISTOR NPN SILICON

GENERAL PURPOSE TRANSISTOR (NPN SILICON)

NPN LISICON PLANAR EPITAXIAL TRANSISTORS

THE 2N1613 AND 2N1711 ARE NPN SILICON PLANAR EPITAXIAL TRANSISTORS DESIGNED FOR SWITCHING AND D.C. AMPLIFIERS.

SWITCHES AND UNIVERSAL AMPLIFIERS

DESCRIPTION The 2N1613 and2N1711 are silicon planar epitaxial NPN transistors in Jedec TO-39 metal case. They are designed for use in high-performance amplifier, oscillator and switching circuits. The 2N1711 is also used to advantage in amplifiers where low noise is an important factor.