NPN medium power transistor

DESCRIPTION NPN medium power transistor in a TO-39 metal package. FEATURES • High current (max. 500 mA) • Low voltage (max. 50 V). APPLICATIONS • DC and wideband amplifiers.

GENERAL PURPOSE TRANSISTOR (NPN SILICON)

GENERAL PURPOSE TRANSISTOR (NPN SILICON)

GENERAL PURPOSE TRANSISTOR NPN SILICON

GENERAL PURPOSE TRANSISTOR (NPN SILICON)

NPN SILICON PLANAR TRANSISTOR

NPN SILICON PLANAR TRANSISTOR General Purpose Transistor

SILICON NPN TRANSISTOR

DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N1711 is a silicon NPN epitaxial planar transistor designed for small signal general purpose switching applications. MARKING: FULL PART NUMBER

Bipolar Transistor

Description: A silicon NPN transistor in a TO-39 type case designed primarily for amplifier and switching applications. This device features high breakdown voltage, low leakage current, low capacity, and beta useful over an extremely wide current range. Description Bipolar Transistor, NPN, 0.

SILICON PLANAR EPITAXIAL TRANSISTORS

SILICON PLANAR EPITAXIAL TRANSISTORS The 2N1613 and 2N1711 are NPN transistors mounted in TO-39 metal package with the collector connected to the case . They are designed for use in high-performance amplifier, oscillator and switching circuits. The 2N1711 is also used to advantage in amplifiers

NPN LOW POWER SILICON TRANSISTOR

NPN LOW POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/225

Small Signal Transistors

Small Signal Transistors TO-39 Case

NPN LISICON PLANAR EPITAXIAL TRANSISTORS

THE 2N1613 AND 2N1711 ARE NPN SILICON PLANAR EPITAXIAL TRANSISTORS DESIGNED FOR SWITCHING AND D.C. AMPLIFIERS.

Diode TP-39

Diode TP-39

Quality Semi-Conductors

Power Transistors

SWITCHES AND UNIVERSAL AMPLIFIERS

DESCRIPTION The 2N1613 and2N1711 are silicon planar epitaxial NPN transistors in Jedec TO-39 metal case. They are designed for use in high-performance amplifier, oscillator and switching circuits. The 2N1711 is also used to advantage in amplifiers where low noise is an important factor.

EPITAXIAL PLANAR NPN

DESCRIPTION The 2N1613 and2N1711 are silicon planar epitaxial NPN transistors in Jedec TO-39 metal case. They are designed for use in high-performance amplifier, oscillator and switching circuits. The 2N1711 is also used to advantage in amplifiers where low noise is an important factor.

SILICON PLANAR NPN BIPOLAR TRANSISTOR

Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. Bipolar NPN Device. VCEO = 50V IC = 0.5A

NPN Silicon Low-Power 30V to 60V, 0.5A

This specification covers the performance requirements for NPN, silicon, low-power, 2N1711 and 2N1890 transistors. Three levels of product assurance (JAN, JANTX and JANTXV) are provided for each device type as specified in MIL-PRF-19500/225.The device packages for the encapsulated device types are a

GERMANIUM PNP TRANSISTORS

文件：2.44311 Mbytes Page：6 Pages

封装/外壳：TO-205AA，TO-5-3 金属罐 包装：散装 描述：TRANS NPN 50V 0.5A TO5 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

封装/外壳：TO-205AD，TO-39-3 金属罐 包装：剪切带（CT）带盒（TB） 描述：TRANS NPN 50V 0.5A TO39 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

Bipolar NPN Device in a Hermetically sealed TO39

文件：15.36 Kbytes Page：1 Pages

NPN LOW POWER SILICON TRANSISTOR

文件：59.49 Kbytes Page：3 Pages

SILICON PLANAR EPITAXIAL TRANSISTORS

文件：84.91 Kbytes Page：3 Pages

Diode TP-39

Diode TP-39

Quality Semi-Conductors

Power Transistors

Small Signal Transistors

Small Signal Transistors TO-39 Case

NPN Silicon Low-Power 30V to 60V, 0.5A

This specification covers the performance requirements for NPN, silicon, low-power, 2N1711 and 2N1890 transistors. Three levels of product assurance (JAN, JANTX and JANTXV) are provided for each device type as specified in MIL-PRF-19500/225. The device packages for the encapsulated device types are as follows: (2N1711 and 2N1890) Three terminal round metal can TO-205AD (formerly TO-39) and TO-205-AA (formerly TO-5).;

Through-Hole Transistor-Small Signal (<=1A) NPN General Purpose Amplifier/Switch