2A, 1200V N-CHANNEL POWER MOSFET

The UTC 2N120 provide excellent RDS(ON), low gate chargeand operation with low gate voltages. This device is suitable foruse as a load switch or in PWM applications. RDS(ON) ≤ 7.5Ω @ VGS=10V, ID=1.0A Low Reverse Transfer Capacitance Fast Switching Capability Avalanche Energy Specified Improved dv/dt Capability, High Ruggedness;

POWER TRANSISTORS

POWER TRANSISTORS

POWER TRANSISTORS

POWER TRANSISTORS

2.0A, 1200V N-CHANNEL POWER MOSFET

 DESCRIPTION The UTC 2N120-E4 provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications.  FEATURES0 * RDS(ON) ≤ 10 Ω @ VGS=10V, ID=1.0A * Low Reverse Transfer Capacitance * Fast Switching Cap

PNP Transistor

Planar Power MOSFET  (N-CH)

12A, 1200V, NPT Series N-Channel IGBT

The HGTP2N120BN, HGTD2N120BNS, and HGT1S2N120BNS are Non-Punch Through (NPT) IGBT designs. They are new members of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low

13A, 1200V, NPT Series N-Channel IGBT

The HGTD2N120CNS, HGTP2N120CN, and HGT1S2N120CNS are Non-Punch Through (NPT) IGBT designs. They are new members of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low

12A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode

The HGTP2N120BND and HGT1S2N120BNDS are Non-Punch Through (NPT) IGBT designs. They are new members of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state cond

13A, 1200V, NPT Series N-Channel IGBT

文件：498.55 Kbytes Page：9 Pages

13A, 1200V, NPT Series N-Channel IGBT

文件：498.55 Kbytes Page：9 Pages