位置：首页 > IC中文资料 > 2ED21834S06J
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
2ED21834S06J | 650 V high-side and low-side gate driver with integrated bootstrap diode Description The 2ED2181(4)S06F(J) is a high voltage, high speed power MOSFET and IGBT driver with independent high and low side referenced output channels. Based on Infineon’s SOI-technology there is an excellent ruggedness and noise immunity with capability to maintain operational logic at negat | Infineon 英飞凌 |   | |
2ED21834S06J | 650 V half-bridge gate driver with integrated bootstrap diode Description The 2ED2182(4)S06F(J) is a half-bridge high voltage, high speed power MOSFET and IGBT driver with independent high and low side referenced output channels. Based on Infineon’s SOI-technology there is an excellent ruggedness and noise immunity with capability to maintain operational lo | Infineon 英飞凌 | | |
2ED21834S06J | 650 V、2.5 A 高电流半桥栅极驱动器 IC，集成自举二极管，采用 DSO-14 封装 | Infineon 英飞凌 | | |
封装/外壳：14-SOIC（0.154"，3.90mm 宽） 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：IC HALF BRIDGE GATE DRIVER 650V 集成电路（IC） 栅极驱动器 | Infineon 英飞凌 | |
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
1000 |
|||||||
Infineon/英飞凌 |
24+ |
DSO-14 |
8000 |
只做原装，欢迎询价，量大价优 |
|||
INFINEON |
24+ |
con |
65 |
现货常备产品原装可到京北通宇商城查价格 |
|||
Infineon/英飞凌 |
2021+ |
DSO-14 |
9600 |
原装现货，欢迎询价 |
|||
Infineon |
25+ |
电联咨询 |
7800 |
公司现货,提供拆样技术支持 |
|||
Infineon Technologies |
25+ |
14-SOIC(0.154 3.90mm 宽) |
9350 |
独立分销商 公司只做原装 诚心经营 免费试样正品保证 |
|||
INFINEON |
24+ |
n/a |
25836 |
新到现货,只做原装进口 |
|||
24+ |
N/A |
62000 |
一级代理-主营优势-实惠价格-不悔选择 |
||||
Infineon |
23+ |
PG-DSO-14 |
15500 |
英飞凌优势渠道全系列在售 |
|||
Infineon/英飞凌 |
2025+ |
DSO-14 |
8000 |
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2ED21834S06J规格书下载地址
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DdatasheetPDF页码索引
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