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2DB1价格
参考价格：￥2.3649
型号：2DB101J 品牌：Ametherm 备注：这里有2DB1多少钱，2025年最近7天走势，今日出价，今日竞价，2DB1批发/采购报价，2DB1行情走势销售排行榜，2DB1报价。| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
PNPSURFACEMOUNTTRANSISTOR Features •EpitaxialPlanarDieConstruction •IdeallySuitedforAutomatedAssemblyProcesses •IdealforMediumPowerSwitchingorAmplificationApplications •LeadFreeByDesign/RoHSCompliant •GreenDevice MechanicalData •Case:SOT89-3L •CaseMaterial:MoldedPla | DIODESDiodes Incorporated 美台半导体 |  |   | |
PNPSURFACEMOUNTTRANSISTOR Features •EpitaxialPlanarDieConstruction •IdeallySuitedforAutomatedAssemblyProcesses •IdealforMediumPowerSwitchingorAmplificationApplications •LeadFreeByDesign/RoHSCompliant •GreenDevice MechanicalData •Case:SOT89-3L •CaseMaterial:MoldedPla | DIODESDiodes Incorporated 美台半导体 | | | |
PNPSURFACEMOUNTTRANSISTOR Features •BVCEO>-32V •IC=-1AHighContinuousCollectorCurrent •ComplementaryNPNType:2DD1664 •IdeallySuitedforAutomatedAssemblyProcesses •IdealforMediumPowerSwitchingorAmplificationApplications •TotallyLead-Free&FullyRoHSCompliant(Notes1&2) •Haloge | DIODESDiodes Incorporated 美台半导体 | | | |
PNPSURFACEMOUNTTRANSISTOR Features •BVCEO>-32V •IC=-1AHighContinuousCollectorCurrent •ComplementaryNPNType:2DD1664 •IdeallySuitedforAutomatedAssemblyProcesses •IdealforMediumPowerSwitchingorAmplificationApplications •TotallyLead-Free&FullyRoHSCompliant(Notes1&2) •Haloge | DIODESDiodes Incorporated 美台半导体 | | | |
PNPSURFACEMOUNTTRANSISTOR Features •BVCEO>-32V •IC=-1AHighContinuousCollectorCurrent •ComplementaryNPNType:2DD1664 •IdeallySuitedforAutomatedAssemblyProcesses •IdealforMediumPowerSwitchingorAmplificationApplications •TotallyLead-Free&FullyRoHSCompliant(Notes1&2) •Haloge | DIODESDiodes Incorporated 美台半导体 | | | |
PNPSURFACEMOUNTTRANSISTOR Features •BVCEO>-32V •IC=-1AHighContinuousCollectorCurrent •ComplementaryNPNType:2DD1664 •IdeallySuitedforAutomatedAssemblyProcesses •IdealforMediumPowerSwitchingorAmplificationApplications •TotallyLead-Free&FullyRoHSCompliant(Notes1&2) •Haloge | DIODESDiodes Incorporated 美台半导体 | | | |
PNPSURFACEMOUNTTRANSISTOR Features •BVCEO>-32V •IC=-1AHighContinuousCollectorCurrent •ComplementaryNPNType:2DD1664 •IdeallySuitedforAutomatedAssemblyProcesses •IdealforMediumPowerSwitchingorAmplificationApplications •TotallyLead-Free&FullyRoHSCompliant(Notes1&2) •Haloge | DIODESDiodes Incorporated 美台半导体 | | | |
PNPSURFACEMOUNTTRANSISTOR Features •BVCEO>-32V •IC=-1AHighContinuousCollectorCurrent •ComplementaryNPNType:2DD1664 •IdeallySuitedforAutomatedAssemblyProcesses •IdealforMediumPowerSwitchingorAmplificationApplications •TotallyLead-Free&FullyRoHSCompliant(Notes1&2) •Haloge | DIODESDiodes Incorporated 美台半导体 | | | |
iscSiliconPNPPowerTransistor DESCRIPTION ·Lowsaturationvoltage ·Highreliability ·HighContinuousCollectorCurrent APPLICATIONS ·PowerSwitchingorAmplification | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 |  | | |
32VPNPSURFACEMOUNTTRANSISTORINTO252 Features •BVCEO>-32V •IC=-2AHighContinuousCollectorCurrent •ICM=-3APeakPulseCurrent •EpitaxialPlanarDieConstruction •LowCollector-EmitterSaturationVoltage •IdealforMediumPowerSwitchingorAmplificationApplications •TotallyLead-Free&FullyRoHSCompliant | DIODESDiodes Incorporated 美台半导体 | | | |
32VPNPSURFACEMOUNTTRANSISTORINTO252 Features •BVCEO>-32V •IC=-2AHighContinuousCollectorCurrent •ICM=-3APeakPulseCurrent •EpitaxialPlanarDieConstruction •LowCollector-EmitterSaturationVoltage •IdealforMediumPowerSwitchingorAmplificationApplications •TotallyLead-Free&FullyRoHSCompliant | DIODESDiodes Incorporated 美台半导体 | | | |
PNPSURFACEMOUNTTRANSISTOR Features •BVCEO>-50V •IC=-3AHighContinuousCollectorCurrent •ICM=-4.5APeakPulseCurrent •EpitaxialPlanarDieConstruction •LowCollector-EmitterSaturationVoltage •IdealforMediumPowerSwitchingorAmplificationApplications •TotallyLead-Free&FullyRoHSComplian | DIODESDiodes Incorporated 美台半导体 | | | |
PNPSURFACEMOUNTTRANSISTOR Features •BVCEO>-50V •IC=-3AHighContinuousCollectorCurrent •ICM=-4.5APeakPulseCurrent •EpitaxialPlanarDieConstruction •LowCollector-EmitterSaturationVoltage •IdealforMediumPowerSwitchingorAmplificationApplications •TotallyLead-Free&FullyRoHSComplian | DIODESDiodes Incorporated 美台半导体 | | | |
PNPSURFACEMOUNTTRANSISTOR Features •BVCEO>-32V •IC=-2AhighContinuousCurrent •LowsaturationvoltageVCE(sat) | DIODESDiodes Incorporated 美台半导体 | | | |
PNPSURFACEMOUNTTRANSISTOR Features •BVCEO>-32V •IC=-2AhighContinuousCurrent •LowsaturationvoltageVCE(sat) | DIODESDiodes Incorporated 美台半导体 | | | |
PNPSURFACEMOUNTTRANSISTOR Features •BVCEO>-32V •IC=-2AhighContinuousCurrent •LowsaturationvoltageVCE(sat) | DIODESDiodes Incorporated 美台半导体 | | | |
PNPSURFACEMOUNTTRANSISTOR Features •BVCEO>-32V •IC=-2AhighContinuousCurrent •LowsaturationvoltageVCE(sat) | DIODESDiodes Incorporated 美台半导体 | | | |
PNPSURFACEMOUNTTRANSISTOR Features •BVCEO>-20V •IC=-5AHighContinuousCurrent •LowSaturationVoltageVCE(sat) | DIODESDiodes Incorporated 美台半导体 | | | |
PNPSURFACEMOUNTTRANSISTOR Features •BVCEO>-20V •IC=-5AHighContinuousCurrent •LowSaturationVoltageVCE(sat) | DIODESDiodes Incorporated 美台半导体 | | | |
PNPSURFACEMOUNTTRANSISTOR Features •BVCEO>-20V •IC=-5AHighContinuousCurrent •LowSaturationVoltageVCE(sat) | DIODESDiodes Incorporated 美台半导体 | | | |
PNPSURFACEMOUNTTRANSISTOR Features •EpitaxialPlanarDieConstruction •ComplementaryNPNTypeAvailable(2DD2150) •IdeallySuitedforAutomatedAssemblyProcesses •IdealforMediumPowerSwitchingorAmplificationApplications •LeadFreeByDesign/RoHSCompliant(Note1) •GreenDevice(Note2) | DIODESDiodes Incorporated 美台半导体 | | | |
PNPSURFACEMOUNTTRANSISTOR Features •EpitaxialPlanarDieConstruction •ComplementaryNPNTypeAvailable(2DD2150) •IdeallySuitedforAutomatedAssemblyProcesses •IdealforMediumPowerSwitchingorAmplificationApplications •LeadFreeByDesign/RoHSCompliant(Note1) •GreenDevice(Note2) | DIODESDiodes Incorporated 美台半导体 | | | |
LOWVCE(SAT)PNPSURFACEMOUNTTRANSISTOR Features •EpitaxialPlanarDieConstruction •LowCollector-EmitterSaturationVoltage •IdealforLowPowerAmplificationandSwitching •ComplementaryNPNTypeAvailable(2DD2652) •Ultra-SmallSurfaceMountPackage •LeadFreeByDesign/RoHSCompliant(Note1) •GreenDevice(Note2) | DIODESDiodes Incorporated 美台半导体 | | | |
LOWVCE(SAT)PNPSURFACEMOUNTTRANSISTOR Features •EpitaxialPlanarDieConstruction •LowCollector-EmitterSaturationVoltage •IdealforLowPowerAmplificationandSwitching •ComplementaryNPNTypeAvailable(2DD2652) •Ultra-SmallSurfaceMountPackage •LeadFreeByDesign/RoHSCompliant(Note1) •GreenDevice(Note2) | DIODESDiodes Incorporated 美台半导体 | | | |
LOWVCE(SAT)PNPSURFACEMOUNTTRANSISTOR Features •EpitaxialPlanarDieConstruction •LowCollector-EmitterSaturationVoltage •IdealforLowPowerAmplificationandSwitching •ComplementaryNPNTypeAvailable(2DD2656) •Ultra-SmallSurfaceMountPackage •LeadFreeByDesign/RoHSCompliant(Note1) •GreenDevice(Note2) | DIODESDiodes Incorporated 美台半导体 | | | |
LOWVCE(SAT)PNPSURFACEMOUNTTRANSISTOR Features •EpitaxialPlanarDieConstruction •LowCollector-EmitterSaturationVoltage •IdealforLowPowerAmplificationandSwitching •ComplementaryNPNTypeAvailable(2DD2656) •Ultra-SmallSurfaceMountPackage •LeadFreeByDesign/RoHSCompliant(Note1) •GreenDevice(Note2) | DIODESDiodes Incorporated 美台半导体 | | | |
LOWVCE(SAT)PNPSURFACEMOUNTTRANSISTOR Features •EpitaxialPlanarDieConstruction •IdeallySuitedforAutomatedAssemblyProcesses •IdealforMediumPowerSwitchingorAmplificationApplications •ComplementaryNPNTypeAvailable(2DD2661) •TotallyLead-Free&FullyRoHScompliant(Note1) •HalogenandAntimonyFree.“G | DIODESDiodes Incorporated 美台半导体 | | | |
LOWVCE(SAT)PNPSURFACEMOUNTTRANSISTOR Features •EpitaxialPlanarDieConstruction •IdeallySuitedforAutomatedAssemblyProcesses •IdealforMediumPowerSwitchingorAmplificationApplications •ComplementaryNPNTypeAvailable(2DD2661) •TotallyLead-Free&FullyRoHScompliant(Note1) •HalogenandAntimonyFree.“G | DIODESDiodes Incorporated 美台半导体 | | | |
LOWVCE(SAT)PNPSURFACEMOUNTTRANSISTOR Features •EpitaxialPlanarDieConstruction •IdeallySuitedforAutomatedAssemblyProcesses •IdealforMediumPowerSwitchingorAmplificationApplications •ComplementaryNPNTypeAvailable(2DD2678) •LeadFreeByDesign/RoHSCompliant(Note1) •GreenDevice(Note2) | DIODESDiodes Incorporated 美台半导体 | | | |
LOWVCE(SAT)PNPSURFACEMOUNTTRANSISTOR Features •EpitaxialPlanarDieConstruction •IdeallySuitedforAutomatedAssemblyProcesses •IdealforMediumPowerSwitchingorAmplificationApplications •ComplementaryNPNTypeAvailable(2DD2678) •LeadFreeByDesign/RoHSCompliant(Note1) •GreenDevice(Note2) | DIODESDiodes Incorporated 美台半导体 | | | |
LOWVCE(SAT)PNPSURFACEMOUNTTRANSISTOR Features •EpitaxialPlanarDieConstruction •IdeallySuitedforAutomatedAssemblyProcesses •IdealforMediumPowerSwitchingorAmplificationApplications •ComplementaryNPNType(2DD2679)Available •LeadFreeByDesign/RoHSCompliant •GreenDevice MechanicalData •Case:SOT89-3L | DIODESDiodes Incorporated 美台半导体 | | | |
LOWVCE(SAT)PNPSURFACEMOUNTTRANSISTOR Features •EpitaxialPlanarDieConstruction •IdeallySuitedforAutomatedAssemblyProcesses •IdealforMediumPowerSwitchingorAmplificationApplications •ComplementaryNPNType(2DD2679)Available •LeadFreeByDesign/RoHSCompliant •GreenDevice MechanicalData •Case:SOT89-3L | DIODESDiodes Incorporated 美台半导体 | | | |
封装/外壳：圆片式，5.1mm 直径 x 0.6mm 宽 包装：散装 描述：THERMISTOR NTC 100OHM 3485K DISC 传感器，变送器 温度传感器 - NTC 热敏电阻器 | AMETHERM AMETHERM Circuit Protection Thermistors |  | | |
封装/外壳：圆片式，5.1mm 直径 x 0.6mm 宽 包装：散装 描述：THERMISTOR NTC 1KOHM 3485K DISC 传感器，变送器 温度传感器 - NTC 热敏电阻器 | AMETHERM AMETHERM Circuit Protection Thermistors | | | |
PNPSURFACEMOUNTTRANSISTOR 文件：201.27 Kbytes Page：4 Pages | DIODESDiodes Incorporated 美台半导体 | | | |
32VPNPSURFACEMOUNTTRANSISTORINSOT-89 文件：161.87 Kbytes Page：6 Pages | DIODESDiodes Incorporated 美台半导体 | | | |
32VPNPSURFACEMOUNTTRANSISTORINSOT-89 文件：161.87 Kbytes Page：6 Pages | DIODESDiodes Incorporated 美台半导体 | | | |
32VPNPSURFACEMOUNTTRANSISTORINSOT-89 文件：161.87 Kbytes Page：6 Pages | DIODESDiodes Incorporated 美台半导体 | | | |
32VPNPSURFACEMOUNTTRANSISTORINSOT-89 文件：161.87 Kbytes Page：6 Pages | DIODESDiodes Incorporated 美台半导体 | | | |
32VPNPMEDIUMPOWERTRANSISTORINTO252 文件：479.73 Kbytes Page：6 Pages | DIODESDiodes Incorporated 美台半导体 | | | |
50VPNPSURFACEMOUNTTRANSISTORINTO252-3L 文件：157.58 Kbytes Page：6 Pages | DIODESDiodes Incorporated 美台半导体 | | | |
50VPNPSURFACEMOUNTTRANSISTORINTO252-3L 文件：157.58 Kbytes Page：6 Pages | DIODESDiodes Incorporated 美台半导体 | | | |
50VPNPMEDIUMPOWERTRANSISTORINTO252 文件：348.35 Kbytes Page：6 Pages | DIODESDiodes Incorporated 美台半导体 | | | |
50VPNPSURFACEMOUNTTRANSISTORINTO252-3L 文件：157.58 Kbytes Page：6 Pages | DIODESDiodes Incorporated 美台半导体 | | | |
40VPNPSURFACEMOUNTTRANSISTORINSOT89 文件：151.5 Kbytes Page：6 Pages | DIODESDiodes Incorporated 美台半导体 | | | |
40VPNPSURFACEMOUNTTRANSISTORINSOT89 文件：151.5 Kbytes Page：6 Pages | DIODESDiodes Incorporated 美台半导体 | | | |
32VPNPMEDIUMPOWERTRANSISTORINSOT89 文件：287.93 Kbytes Page：7 Pages | DIODESDiodes Incorporated 美台半导体 | | | |
32VPNPMEDIUMPOWERTRANSISTORINSOT89 文件：287.93 Kbytes Page：7 Pages | DIODESDiodes Incorporated 美台半导体 | | | |
40VPNPSURFACEMOUNTTRANSISTORINSOT89 文件：151.5 Kbytes Page：6 Pages | DIODESDiodes Incorporated 美台半导体 | | | |
40VPNPSURFACEMOUNTTRANSISTORINSOT89 文件：151.5 Kbytes Page：6 Pages | DIODESDiodes Incorporated 美台半导体 | | | |
40VPNPSURFACEMOUNTTRANSISTORINSOT89 文件：151.5 Kbytes Page：6 Pages | DIODESDiodes Incorporated 美台半导体 | | | |
32VPNPMEDIUMPOWERTRANSISTORINSOT89 文件：287.93 Kbytes Page：7 Pages | DIODESDiodes Incorporated 美台半导体 | | | |
32VPNPMEDIUMPOWERTRANSISTORINSOT89 文件：287.93 Kbytes Page：7 Pages | DIODESDiodes Incorporated 美台半导体 | | | |
40VPNPSURFACEMOUNTTRANSISTORINSOT89 文件：151.5 Kbytes Page：6 Pages | DIODESDiodes Incorporated 美台半导体 | | | |
32VPNPMEDIUMPOWERTRANSISTORINSOT89 文件：287.93 Kbytes Page：7 Pages | DIODESDiodes Incorporated 美台半导体 | | | |
40VPNPSURFACEMOUNTTRANSISTORINSOT89 文件：151.5 Kbytes Page：6 Pages | DIODESDiodes Incorporated 美台半导体 | | | |
PNPSURFACEMOUNTTRANSISTOR 文件：158.79 Kbytes Page：5 Pages | DIODESDiodes Incorporated 美台半导体 | | | |
PNPSURFACEMOUNTTRANSISTOR 文件：158.79 Kbytes Page：5 Pages | DIODESDiodes Incorporated 美台半导体 | | | |
20VPNPMEDIUMPOWERTRANSISTORINSOT89 文件：267.13 Kbytes Page：6 Pages | DIODESDiodes Incorporated 美台半导体 | | | |
20VPNPMEDIUMPOWERTRANSISTORINSOT89 文件：267.13 Kbytes Page：6 Pages | DIODESDiodes Incorporated 美台半导体 | | |
2DB1产品属性
- 类型
描述
- 型号
2DB1
- 制造商
API TECHNOLOGIES CORP.
- 功能描述
Thermistor NTC 100Ohm 10% 2-Pin
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
DIODES |
23+ |
TO252 |
174854 |
原装正品现货 |
|||
DIODES |
21+ |
TO252 |
5000 |
只做原装正品,不止网上数量,欢迎电话微信查询! |
|||
Diodes Incorporated |
24+ |
TO-252-3,DPak(2 引线 + 接片 |
30000 |
晶体管-分立半导体产品-原装正品 |
|||
DIODES |
24+ |
20000 |
全新、原装、现货 |
||||
DIODES |
16+ |
TO252 |
300 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
DIODES |
24+ |
TO252 |
5000 |
原厂授权代理 价格绝对优势 |
|||
DIODES |
21+ |
DPAK-3 |
45574 |
原装现货假一赔十 |
|||
DIODES/美台 |
2022+ |
SOT252 |
2500 |
原厂代理 终端免费提供样品 |
|||
DIODES/美台 |
2021+ |
NA |
9000 |
原装现货,随时欢迎询价 |
|||
DIODES |
ROHS+Original |
TO-252-3L |
25890 |
原装现货 库存特价/长期供应元器件代理经销 |
2DB1芯片相关品牌
2DB1规格书下载地址
2DB1参数引脚图相关
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- 2DA1774R-7
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DdatasheetPDF页码索引
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