2DB1价格

参考价格:¥2.3649

型号:2DB101J 品牌:Ametherm 备注:这里有2DB1多少钱,2025年最近7天走势,今日出价,今日竞价,2DB1批发/采购报价,2DB1行情走势销售排行榜,2DB1报价。
型号 功能描述 生产厂家&企业 LOGO 操作

PNPSURFACEMOUNTTRANSISTOR

Features •EpitaxialPlanarDieConstruction •IdeallySuitedforAutomatedAssemblyProcesses •IdealforMediumPowerSwitchingorAmplificationApplications •LeadFreeByDesign/RoHSCompliant •GreenDevice MechanicalData •Case:SOT89-3L •CaseMaterial:MoldedPla

DIODESDiodes Incorporated

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DIODES

PNPSURFACEMOUNTTRANSISTOR

Features •EpitaxialPlanarDieConstruction •IdeallySuitedforAutomatedAssemblyProcesses •IdealforMediumPowerSwitchingorAmplificationApplications •LeadFreeByDesign/RoHSCompliant •GreenDevice MechanicalData •Case:SOT89-3L •CaseMaterial:MoldedPla

DIODESDiodes Incorporated

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DIODES

PNPSURFACEMOUNTTRANSISTOR

Features •BVCEO>-32V •IC=-1AHighContinuousCollectorCurrent •ComplementaryNPNType:2DD1664 •IdeallySuitedforAutomatedAssemblyProcesses •IdealforMediumPowerSwitchingorAmplificationApplications •TotallyLead-Free&FullyRoHSCompliant(Notes1&2) •Haloge

DIODESDiodes Incorporated

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DIODES

PNPSURFACEMOUNTTRANSISTOR

Features •BVCEO>-32V •IC=-1AHighContinuousCollectorCurrent •ComplementaryNPNType:2DD1664 •IdeallySuitedforAutomatedAssemblyProcesses •IdealforMediumPowerSwitchingorAmplificationApplications •TotallyLead-Free&FullyRoHSCompliant(Notes1&2) •Haloge

DIODESDiodes Incorporated

美台半导体

DIODES

PNPSURFACEMOUNTTRANSISTOR

Features •BVCEO>-32V •IC=-1AHighContinuousCollectorCurrent •ComplementaryNPNType:2DD1664 •IdeallySuitedforAutomatedAssemblyProcesses •IdealforMediumPowerSwitchingorAmplificationApplications •TotallyLead-Free&FullyRoHSCompliant(Notes1&2) •Haloge

DIODESDiodes Incorporated

美台半导体

DIODES

PNPSURFACEMOUNTTRANSISTOR

Features •BVCEO>-32V •IC=-1AHighContinuousCollectorCurrent •ComplementaryNPNType:2DD1664 •IdeallySuitedforAutomatedAssemblyProcesses •IdealforMediumPowerSwitchingorAmplificationApplications •TotallyLead-Free&FullyRoHSCompliant(Notes1&2) •Haloge

DIODESDiodes Incorporated

美台半导体

DIODES

PNPSURFACEMOUNTTRANSISTOR

Features •BVCEO>-32V •IC=-1AHighContinuousCollectorCurrent •ComplementaryNPNType:2DD1664 •IdeallySuitedforAutomatedAssemblyProcesses •IdealforMediumPowerSwitchingorAmplificationApplications •TotallyLead-Free&FullyRoHSCompliant(Notes1&2) •Haloge

DIODESDiodes Incorporated

美台半导体

DIODES

PNPSURFACEMOUNTTRANSISTOR

Features •BVCEO>-32V •IC=-1AHighContinuousCollectorCurrent •ComplementaryNPNType:2DD1664 •IdeallySuitedforAutomatedAssemblyProcesses •IdealforMediumPowerSwitchingorAmplificationApplications •TotallyLead-Free&FullyRoHSCompliant(Notes1&2) •Haloge

DIODESDiodes Incorporated

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DIODES

iscSiliconPNPPowerTransistor

DESCRIPTION ·Lowsaturationvoltage ·Highreliability ·HighContinuousCollectorCurrent APPLICATIONS ·PowerSwitchingorAmplification

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

32VPNPSURFACEMOUNTTRANSISTORINTO252

Features •BVCEO>-32V •IC=-2AHighContinuousCollectorCurrent •ICM=-3APeakPulseCurrent •EpitaxialPlanarDieConstruction •LowCollector-EmitterSaturationVoltage •IdealforMediumPowerSwitchingorAmplificationApplications •TotallyLead-Free&FullyRoHSCompliant

DIODESDiodes Incorporated

美台半导体

DIODES

32VPNPSURFACEMOUNTTRANSISTORINTO252

Features •BVCEO>-32V •IC=-2AHighContinuousCollectorCurrent •ICM=-3APeakPulseCurrent •EpitaxialPlanarDieConstruction •LowCollector-EmitterSaturationVoltage •IdealforMediumPowerSwitchingorAmplificationApplications •TotallyLead-Free&FullyRoHSCompliant

DIODESDiodes Incorporated

美台半导体

DIODES

PNPSURFACEMOUNTTRANSISTOR

Features •BVCEO>-50V •IC=-3AHighContinuousCollectorCurrent •ICM=-4.5APeakPulseCurrent •EpitaxialPlanarDieConstruction •LowCollector-EmitterSaturationVoltage •IdealforMediumPowerSwitchingorAmplificationApplications •TotallyLead-Free&FullyRoHSComplian

DIODESDiodes Incorporated

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DIODES

PNPSURFACEMOUNTTRANSISTOR

Features •BVCEO>-50V •IC=-3AHighContinuousCollectorCurrent •ICM=-4.5APeakPulseCurrent •EpitaxialPlanarDieConstruction •LowCollector-EmitterSaturationVoltage •IdealforMediumPowerSwitchingorAmplificationApplications •TotallyLead-Free&FullyRoHSComplian

DIODESDiodes Incorporated

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DIODES

PNPSURFACEMOUNTTRANSISTOR

Features •BVCEO>-32V •IC=-2AhighContinuousCurrent •LowsaturationvoltageVCE(sat)

DIODESDiodes Incorporated

美台半导体

DIODES

PNPSURFACEMOUNTTRANSISTOR

Features •BVCEO>-32V •IC=-2AhighContinuousCurrent •LowsaturationvoltageVCE(sat)

DIODESDiodes Incorporated

美台半导体

DIODES

PNPSURFACEMOUNTTRANSISTOR

Features •BVCEO>-32V •IC=-2AhighContinuousCurrent •LowsaturationvoltageVCE(sat)

DIODESDiodes Incorporated

美台半导体

DIODES

PNPSURFACEMOUNTTRANSISTOR

Features •BVCEO>-32V •IC=-2AhighContinuousCurrent •LowsaturationvoltageVCE(sat)

DIODESDiodes Incorporated

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DIODES

PNPSURFACEMOUNTTRANSISTOR

Features •BVCEO>-20V •IC=-5AHighContinuousCurrent •LowSaturationVoltageVCE(sat)

DIODESDiodes Incorporated

美台半导体

DIODES

PNPSURFACEMOUNTTRANSISTOR

Features •BVCEO>-20V •IC=-5AHighContinuousCurrent •LowSaturationVoltageVCE(sat)

DIODESDiodes Incorporated

美台半导体

DIODES

PNPSURFACEMOUNTTRANSISTOR

Features •BVCEO>-20V •IC=-5AHighContinuousCurrent •LowSaturationVoltageVCE(sat)

DIODESDiodes Incorporated

美台半导体

DIODES

PNPSURFACEMOUNTTRANSISTOR

Features •EpitaxialPlanarDieConstruction •ComplementaryNPNTypeAvailable(2DD2150) •IdeallySuitedforAutomatedAssemblyProcesses •IdealforMediumPowerSwitchingorAmplificationApplications •LeadFreeByDesign/RoHSCompliant(Note1) •GreenDevice(Note2)

DIODESDiodes Incorporated

美台半导体

DIODES

PNPSURFACEMOUNTTRANSISTOR

Features •EpitaxialPlanarDieConstruction •ComplementaryNPNTypeAvailable(2DD2150) •IdeallySuitedforAutomatedAssemblyProcesses •IdealforMediumPowerSwitchingorAmplificationApplications •LeadFreeByDesign/RoHSCompliant(Note1) •GreenDevice(Note2)

DIODESDiodes Incorporated

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DIODES

LOWVCE(SAT)PNPSURFACEMOUNTTRANSISTOR

Features •EpitaxialPlanarDieConstruction •LowCollector-EmitterSaturationVoltage •IdealforLowPowerAmplificationandSwitching •ComplementaryNPNTypeAvailable(2DD2652) •Ultra-SmallSurfaceMountPackage •LeadFreeByDesign/RoHSCompliant(Note1) •GreenDevice(Note2)

DIODESDiodes Incorporated

美台半导体

DIODES

LOWVCE(SAT)PNPSURFACEMOUNTTRANSISTOR

Features •EpitaxialPlanarDieConstruction •LowCollector-EmitterSaturationVoltage •IdealforLowPowerAmplificationandSwitching •ComplementaryNPNTypeAvailable(2DD2652) •Ultra-SmallSurfaceMountPackage •LeadFreeByDesign/RoHSCompliant(Note1) •GreenDevice(Note2)

DIODESDiodes Incorporated

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DIODES

LOWVCE(SAT)PNPSURFACEMOUNTTRANSISTOR

Features •EpitaxialPlanarDieConstruction •LowCollector-EmitterSaturationVoltage •IdealforLowPowerAmplificationandSwitching •ComplementaryNPNTypeAvailable(2DD2656) •Ultra-SmallSurfaceMountPackage •LeadFreeByDesign/RoHSCompliant(Note1) •GreenDevice(Note2)

DIODESDiodes Incorporated

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DIODES

LOWVCE(SAT)PNPSURFACEMOUNTTRANSISTOR

Features •EpitaxialPlanarDieConstruction •LowCollector-EmitterSaturationVoltage •IdealforLowPowerAmplificationandSwitching •ComplementaryNPNTypeAvailable(2DD2656) •Ultra-SmallSurfaceMountPackage •LeadFreeByDesign/RoHSCompliant(Note1) •GreenDevice(Note2)

DIODESDiodes Incorporated

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DIODES

LOWVCE(SAT)PNPSURFACEMOUNTTRANSISTOR

Features •EpitaxialPlanarDieConstruction •IdeallySuitedforAutomatedAssemblyProcesses •IdealforMediumPowerSwitchingorAmplificationApplications •ComplementaryNPNTypeAvailable(2DD2661) •TotallyLead-Free&FullyRoHScompliant(Note1) •HalogenandAntimonyFree.“G

DIODESDiodes Incorporated

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DIODES

LOWVCE(SAT)PNPSURFACEMOUNTTRANSISTOR

Features •EpitaxialPlanarDieConstruction •IdeallySuitedforAutomatedAssemblyProcesses •IdealforMediumPowerSwitchingorAmplificationApplications •ComplementaryNPNTypeAvailable(2DD2661) •TotallyLead-Free&FullyRoHScompliant(Note1) •HalogenandAntimonyFree.“G

DIODESDiodes Incorporated

美台半导体

DIODES

LOWVCE(SAT)PNPSURFACEMOUNTTRANSISTOR

Features •EpitaxialPlanarDieConstruction •IdeallySuitedforAutomatedAssemblyProcesses •IdealforMediumPowerSwitchingorAmplificationApplications •ComplementaryNPNTypeAvailable(2DD2678) •LeadFreeByDesign/RoHSCompliant(Note1) •GreenDevice(Note2)

DIODESDiodes Incorporated

美台半导体

DIODES

LOWVCE(SAT)PNPSURFACEMOUNTTRANSISTOR

Features •EpitaxialPlanarDieConstruction •IdeallySuitedforAutomatedAssemblyProcesses •IdealforMediumPowerSwitchingorAmplificationApplications •ComplementaryNPNTypeAvailable(2DD2678) •LeadFreeByDesign/RoHSCompliant(Note1) •GreenDevice(Note2)

DIODESDiodes Incorporated

美台半导体

DIODES

LOWVCE(SAT)PNPSURFACEMOUNTTRANSISTOR

Features •EpitaxialPlanarDieConstruction •IdeallySuitedforAutomatedAssemblyProcesses •IdealforMediumPowerSwitchingorAmplificationApplications •ComplementaryNPNType(2DD2679)Available •LeadFreeByDesign/RoHSCompliant •GreenDevice MechanicalData •Case:SOT89-3L

DIODESDiodes Incorporated

美台半导体

DIODES

LOWVCE(SAT)PNPSURFACEMOUNTTRANSISTOR

Features •EpitaxialPlanarDieConstruction •IdeallySuitedforAutomatedAssemblyProcesses •IdealforMediumPowerSwitchingorAmplificationApplications •ComplementaryNPNType(2DD2679)Available •LeadFreeByDesign/RoHSCompliant •GreenDevice MechanicalData •Case:SOT89-3L

DIODESDiodes Incorporated

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DIODES

封装/外壳:圆片式,5.1mm 直径 x 0.6mm 宽 包装:散装 描述:THERMISTOR NTC 100OHM 3485K DISC 传感器,变送器 温度传感器 - NTC 热敏电阻器

AMETHERM

AMETHERM Circuit Protection Thermistors

AMETHERM

封装/外壳:圆片式,5.1mm 直径 x 0.6mm 宽 包装:散装 描述:THERMISTOR NTC 1KOHM 3485K DISC 传感器,变送器 温度传感器 - NTC 热敏电阻器

AMETHERM

AMETHERM Circuit Protection Thermistors

AMETHERM

PNPSURFACEMOUNTTRANSISTOR

文件:201.27 Kbytes Page:4 Pages

DIODESDiodes Incorporated

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DIODES

32VPNPSURFACEMOUNTTRANSISTORINSOT-89

文件:161.87 Kbytes Page:6 Pages

DIODESDiodes Incorporated

美台半导体

DIODES

32VPNPSURFACEMOUNTTRANSISTORINSOT-89

文件:161.87 Kbytes Page:6 Pages

DIODESDiodes Incorporated

美台半导体

DIODES

32VPNPSURFACEMOUNTTRANSISTORINSOT-89

文件:161.87 Kbytes Page:6 Pages

DIODESDiodes Incorporated

美台半导体

DIODES

32VPNPSURFACEMOUNTTRANSISTORINSOT-89

文件:161.87 Kbytes Page:6 Pages

DIODESDiodes Incorporated

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DIODES

32VPNPMEDIUMPOWERTRANSISTORINTO252

文件:479.73 Kbytes Page:6 Pages

DIODESDiodes Incorporated

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DIODES

50VPNPSURFACEMOUNTTRANSISTORINTO252-3L

文件:157.58 Kbytes Page:6 Pages

DIODESDiodes Incorporated

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DIODES

50VPNPSURFACEMOUNTTRANSISTORINTO252-3L

文件:157.58 Kbytes Page:6 Pages

DIODESDiodes Incorporated

美台半导体

DIODES

50VPNPMEDIUMPOWERTRANSISTORINTO252

文件:348.35 Kbytes Page:6 Pages

DIODESDiodes Incorporated

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DIODES

50VPNPSURFACEMOUNTTRANSISTORINTO252-3L

文件:157.58 Kbytes Page:6 Pages

DIODESDiodes Incorporated

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DIODES

40VPNPSURFACEMOUNTTRANSISTORINSOT89

文件:151.5 Kbytes Page:6 Pages

DIODESDiodes Incorporated

美台半导体

DIODES

40VPNPSURFACEMOUNTTRANSISTORINSOT89

文件:151.5 Kbytes Page:6 Pages

DIODESDiodes Incorporated

美台半导体

DIODES

32VPNPMEDIUMPOWERTRANSISTORINSOT89

文件:287.93 Kbytes Page:7 Pages

DIODESDiodes Incorporated

美台半导体

DIODES

32VPNPMEDIUMPOWERTRANSISTORINSOT89

文件:287.93 Kbytes Page:7 Pages

DIODESDiodes Incorporated

美台半导体

DIODES

40VPNPSURFACEMOUNTTRANSISTORINSOT89

文件:151.5 Kbytes Page:6 Pages

DIODESDiodes Incorporated

美台半导体

DIODES

40VPNPSURFACEMOUNTTRANSISTORINSOT89

文件:151.5 Kbytes Page:6 Pages

DIODESDiodes Incorporated

美台半导体

DIODES

40VPNPSURFACEMOUNTTRANSISTORINSOT89

文件:151.5 Kbytes Page:6 Pages

DIODESDiodes Incorporated

美台半导体

DIODES

32VPNPMEDIUMPOWERTRANSISTORINSOT89

文件:287.93 Kbytes Page:7 Pages

DIODESDiodes Incorporated

美台半导体

DIODES

32VPNPMEDIUMPOWERTRANSISTORINSOT89

文件:287.93 Kbytes Page:7 Pages

DIODESDiodes Incorporated

美台半导体

DIODES

40VPNPSURFACEMOUNTTRANSISTORINSOT89

文件:151.5 Kbytes Page:6 Pages

DIODESDiodes Incorporated

美台半导体

DIODES

32VPNPMEDIUMPOWERTRANSISTORINSOT89

文件:287.93 Kbytes Page:7 Pages

DIODESDiodes Incorporated

美台半导体

DIODES

40VPNPSURFACEMOUNTTRANSISTORINSOT89

文件:151.5 Kbytes Page:6 Pages

DIODESDiodes Incorporated

美台半导体

DIODES

PNPSURFACEMOUNTTRANSISTOR

文件:158.79 Kbytes Page:5 Pages

DIODESDiodes Incorporated

美台半导体

DIODES

PNPSURFACEMOUNTTRANSISTOR

文件:158.79 Kbytes Page:5 Pages

DIODESDiodes Incorporated

美台半导体

DIODES

20VPNPMEDIUMPOWERTRANSISTORINSOT89

文件:267.13 Kbytes Page:6 Pages

DIODESDiodes Incorporated

美台半导体

DIODES

20VPNPMEDIUMPOWERTRANSISTORINSOT89

文件:267.13 Kbytes Page:6 Pages

DIODESDiodes Incorporated

美台半导体

DIODES

2DB1产品属性

  • 类型

    描述

  • 型号

    2DB1

  • 制造商

    API TECHNOLOGIES CORP.

  • 功能描述

    Thermistor NTC 100Ohm 10% 2-Pin

更新时间:2025-8-1 17:18:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
DIODES/美台
18+
NA
10000
DIODES/美台
1942+
TO-252
9852
只做原装正品现货或订货!假一赔十!
DIODES
23+
TO252
174854
原装正品现货
DIODES/美台
25+
TO-252-3L
918000
明嘉莱只做原装正品现货
DIODES/美台
22+
DPAK
30000
十七年VIP会员,诚信经营,一手货源,原装正品可零售!
DIODES/美台
24+
DPAK-3
9000
只做原装,欢迎询价,量大价优
DIDOES
NA
16355
一级代理 原装正品假一罚十价格优势长期供货
DIODES/美台
23+
NA
12730
原装正品代理渠道价格优势
DIODES
17+
NA
6200
100%原装正品现货
DIODES
24+
TO252
9800
一级代理/全新原装现货/长期供应!

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