2DB1价格

参考价格:¥2.3649

型号:2DB101J 品牌:Ametherm 备注:这里有2DB1多少钱,2025年最近7天走势,今日出价,今日竞价,2DB1批发/采购报价,2DB1行情走势销售排行榜,2DB1报价。
型号 功能描述 生产厂家 企业 LOGO 操作

PNP SURFACE MOUNT TRANSISTOR

Features • Epitaxial Planar Die Construction • Ideally Suited for Automated Assembly Processes • Ideal for Medium Power Switching or Amplification Applications • Lead Free By Design/RoHS Compliant • Green Device Mechanical Data • Case: SOT89-3L • Case Material: Molded Pla

DIODES

美台半导体

PNP SURFACE MOUNT TRANSISTOR

Features • Epitaxial Planar Die Construction • Ideally Suited for Automated Assembly Processes • Ideal for Medium Power Switching or Amplification Applications • Lead Free By Design/RoHS Compliant • Green Device Mechanical Data • Case: SOT89-3L • Case Material: Molded Pla

DIODES

美台半导体

PNP SURFACE MOUNT TRANSISTOR

Features • BVCEO > -32V • IC = -1A High Continuous Collector Current • Complementary NPN Type: 2DD1664 • Ideally Suited for Automated Assembly Processes • Ideal for Medium Power Switching or Amplification Applications • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) • Haloge

DIODES

美台半导体

PNP SURFACE MOUNT TRANSISTOR

Features • BVCEO > -32V • IC = -1A High Continuous Collector Current • Complementary NPN Type: 2DD1664 • Ideally Suited for Automated Assembly Processes • Ideal for Medium Power Switching or Amplification Applications • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) • Haloge

DIODES

美台半导体

PNP SURFACE MOUNT TRANSISTOR

Features • BVCEO > -32V • IC = -1A High Continuous Collector Current • Complementary NPN Type: 2DD1664 • Ideally Suited for Automated Assembly Processes • Ideal for Medium Power Switching or Amplification Applications • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) • Haloge

DIODES

美台半导体

PNP SURFACE MOUNT TRANSISTOR

Features • BVCEO > -32V • IC = -1A High Continuous Collector Current • Complementary NPN Type: 2DD1664 • Ideally Suited for Automated Assembly Processes • Ideal for Medium Power Switching or Amplification Applications • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) • Haloge

DIODES

美台半导体

PNP SURFACE MOUNT TRANSISTOR

Features • BVCEO > -32V • IC = -1A High Continuous Collector Current • Complementary NPN Type: 2DD1664 • Ideally Suited for Automated Assembly Processes • Ideal for Medium Power Switching or Amplification Applications • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) • Haloge

DIODES

美台半导体

PNP SURFACE MOUNT TRANSISTOR

Features • BVCEO > -32V • IC = -1A High Continuous Collector Current • Complementary NPN Type: 2DD1664 • Ideally Suited for Automated Assembly Processes • Ideal for Medium Power Switching or Amplification Applications • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) • Haloge

DIODES

美台半导体

isc Silicon PNP Power Transistor

DESCRIPTION ·Low saturation voltage ·High reliability ·High Continuous Collector Current APPLICATIONS ·Power Switching or Amplification

ISC

无锡固电

32V PNP SURFACE MOUNT TRANSISTOR IN TO252

Features • BVCEO > -32V • IC = -2A High Continuous Collector Current • ICM = -3A Peak Pulse Current • Epitaxial Planar Die Construction • Low Collector-Emitter Saturation Voltage • Ideal for Medium Power Switching or Amplification Applications • Totally Lead-Free & Fully RoHS Compliant

DIODES

美台半导体

32V PNP SURFACE MOUNT TRANSISTOR IN TO252

Features • BVCEO > -32V • IC = -2A High Continuous Collector Current • ICM = -3A Peak Pulse Current • Epitaxial Planar Die Construction • Low Collector-Emitter Saturation Voltage • Ideal for Medium Power Switching or Amplification Applications • Totally Lead-Free & Fully RoHS Compliant

DIODES

美台半导体

PNP SURFACE MOUNT TRANSISTOR

Features • BVCEO > -50V • IC = -3A High Continuous Collector Current • ICM = -4.5A Peak Pulse Current • Epitaxial Planar Die Construction • Low Collector-Emitter Saturation Voltage • Ideal for Medium Power Switching or Amplification Applications • Totally Lead-Free & Fully RoHS Complian

DIODES

美台半导体

PNP SURFACE MOUNT TRANSISTOR

Features • BVCEO > -50V • IC = -3A High Continuous Collector Current • ICM = -4.5A Peak Pulse Current • Epitaxial Planar Die Construction • Low Collector-Emitter Saturation Voltage • Ideal for Medium Power Switching or Amplification Applications • Totally Lead-Free & Fully RoHS Complian

DIODES

美台半导体

PNP SURFACE MOUNT TRANSISTOR

Features • BVCEO > -32V • IC = -2A high Continuous Current • Low saturation voltage VCE(sat)

DIODES

美台半导体

PNP SURFACE MOUNT TRANSISTOR

Features • BVCEO > -32V • IC = -2A high Continuous Current • Low saturation voltage VCE(sat)

DIODES

美台半导体

PNP SURFACE MOUNT TRANSISTOR

Features • BVCEO > -32V • IC = -2A high Continuous Current • Low saturation voltage VCE(sat)

DIODES

美台半导体

PNP SURFACE MOUNT TRANSISTOR

Features • BVCEO > -32V • IC = -2A high Continuous Current • Low saturation voltage VCE(sat)

DIODES

美台半导体

PNP SURFACE MOUNT TRANSISTOR

Features • BVCEO > -20V • IC = -5A High Continuous Current • Low Saturation Voltage VCE(sat)

DIODES

美台半导体

PNP SURFACE MOUNT TRANSISTOR

Features • BVCEO > -20V • IC = -5A High Continuous Current • Low Saturation Voltage VCE(sat)

DIODES

美台半导体

PNP SURFACE MOUNT TRANSISTOR

Features • BVCEO > -20V • IC = -5A High Continuous Current • Low Saturation Voltage VCE(sat)

DIODES

美台半导体

PNP SURFACE MOUNT TRANSISTOR

Features • Epitaxial Planar Die Construction • Complementary NPN Type Available (2DD2150) • Ideally Suited for Automated Assembly Processes • Ideal for Medium Power Switching or Amplification Applications • Lead Free By Design/RoHS Compliant (Note 1) • Green Device (Note 2)

DIODES

美台半导体

PNP SURFACE MOUNT TRANSISTOR

Features • Epitaxial Planar Die Construction • Complementary NPN Type Available (2DD2150) • Ideally Suited for Automated Assembly Processes • Ideal for Medium Power Switching or Amplification Applications • Lead Free By Design/RoHS Compliant (Note 1) • Green Device (Note 2)

DIODES

美台半导体

LOW VCE(SAT) PNP SURFACE MOUNT TRANSISTOR

Features • Epitaxial Planar Die Construction • Low Collector-Emitter Saturation Voltage • Ideal for Low Power Amplification and Switching • Complementary NPN Type Available (2DD2652) • Ultra-Small Surface Mount Package • Lead Free By Design/RoHS Compliant (Note 1) • Green Device (Note 2)

DIODES

美台半导体

LOW VCE(SAT) PNP SURFACE MOUNT TRANSISTOR

Features • Epitaxial Planar Die Construction • Low Collector-Emitter Saturation Voltage • Ideal for Low Power Amplification and Switching • Complementary NPN Type Available (2DD2652) • Ultra-Small Surface Mount Package • Lead Free By Design/RoHS Compliant (Note 1) • Green Device (Note 2)

DIODES

美台半导体

LOW VCE(SAT) PNP SURFACE MOUNT TRANSISTOR

Features • Epitaxial Planar Die Construction • Low Collector-Emitter Saturation Voltage • Ideal for Low Power Amplification and Switching • Complementary NPN Type Available (2DD2656) • Ultra-Small Surface Mount Package • Lead Free By Design/RoHS Compliant (Note 1) • Green Device (Note 2)

DIODES

美台半导体

LOW VCE(SAT) PNP SURFACE MOUNT TRANSISTOR

Features • Epitaxial Planar Die Construction • Low Collector-Emitter Saturation Voltage • Ideal for Low Power Amplification and Switching • Complementary NPN Type Available (2DD2656) • Ultra-Small Surface Mount Package • Lead Free By Design/RoHS Compliant (Note 1) • Green Device (Note 2)

DIODES

美台半导体

LOW VCE(SAT) PNP SURFACE MOUNT TRANSISTOR

Features • Epitaxial Planar Die Construction • Ideally Suited for Automated Assembly Processes • Ideal for Medium Power Switching or Amplification Applications • Complementary NPN Type Available (2DD2661) • Totally Lead-Free & Fully RoHS compliant (Note 1) • Halogen and Antimony Free. “G

DIODES

美台半导体

LOW VCE(SAT) PNP SURFACE MOUNT TRANSISTOR

Features • Epitaxial Planar Die Construction • Ideally Suited for Automated Assembly Processes • Ideal for Medium Power Switching or Amplification Applications • Complementary NPN Type Available (2DD2661) • Totally Lead-Free & Fully RoHS compliant (Note 1) • Halogen and Antimony Free. “G

DIODES

美台半导体

LOW VCE(SAT) PNP SURFACE MOUNT TRANSISTOR

Features • Epitaxial Planar Die Construction • Ideally Suited for Automated Assembly Processes • Ideal for Medium Power Switching or Amplification Applications • Complementary NPN Type Available (2DD2678) • Lead Free By Design/RoHS Compliant (Note 1) • Green Device (Note 2)

DIODES

美台半导体

LOW VCE(SAT) PNP SURFACE MOUNT TRANSISTOR

Features • Epitaxial Planar Die Construction • Ideally Suited for Automated Assembly Processes • Ideal for Medium Power Switching or Amplification Applications • Complementary NPN Type Available (2DD2678) • Lead Free By Design/RoHS Compliant (Note 1) • Green Device (Note 2)

DIODES

美台半导体

LOW VCE(SAT) PNP SURFACE MOUNT TRANSISTOR

Features • Epitaxial Planar Die Construction • Ideally Suited for Automated Assembly Processes • Ideal for Medium Power Switching or Amplification Applications • Complementary NPN Type (2DD2679) Available • Lead Free By Design/RoHS Compliant • Green Device Mechanical Data • Case: SOT89-3L

DIODES

美台半导体

LOW VCE(SAT) PNP SURFACE MOUNT TRANSISTOR

Features • Epitaxial Planar Die Construction • Ideally Suited for Automated Assembly Processes • Ideal for Medium Power Switching or Amplification Applications • Complementary NPN Type (2DD2679) Available • Lead Free By Design/RoHS Compliant • Green Device Mechanical Data • Case: SOT89-3L

DIODES

美台半导体

封装/外壳:圆片式,5.1mm 直径 x 0.6mm 宽 包装:散装 描述:THERMISTOR NTC 100OHM 3485K DISC 传感器,变送器 温度传感器 - NTC 热敏电阻器

AMETHERM

封装/外壳:圆片式,5.1mm 直径 x 0.6mm 宽 包装:散装 描述:THERMISTOR NTC 1KOHM 3485K DISC 传感器,变送器 温度传感器 - NTC 热敏电阻器

AMETHERM

温度传感器

AMETHERM

PNP TRANSISTOR

DIODES

美台半导体

PNP SURFACE MOUNT TRANSISTOR

文件:201.27 Kbytes Page:4 Pages

DIODES

美台半导体

PNP, 32V, 1A, SOT89

DIODES

美台半导体

32V PNP SURFACE MOUNT TRANSISTOR IN SOT-89

文件:161.87 Kbytes Page:6 Pages

DIODES

美台半导体

32V PNP SURFACE MOUNT TRANSISTOR IN SOT-89

文件:161.87 Kbytes Page:6 Pages

DIODES

美台半导体

32V PNP SURFACE MOUNT TRANSISTOR IN SOT-89

文件:161.87 Kbytes Page:6 Pages

DIODES

美台半导体

32V PNP SURFACE MOUNT TRANSISTOR IN SOT-89

文件:161.87 Kbytes Page:6 Pages

DIODES

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32V PNP MEDIUM POWER TRANSISTOR IN TO252

文件:479.73 Kbytes Page:6 Pages

DIODES

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50V PNP SURFACE MOUNT TRANSISTOR IN TO252-3L

文件:157.58 Kbytes Page:6 Pages

DIODES

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50V PNP SURFACE MOUNT TRANSISTOR IN TO252-3L

文件:157.58 Kbytes Page:6 Pages

DIODES

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50V PNP MEDIUM POWER TRANSISTOR IN TO252

文件:348.35 Kbytes Page:6 Pages

DIODES

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50V PNP SURFACE MOUNT TRANSISTOR IN TO252-3L

文件:157.58 Kbytes Page:6 Pages

DIODES

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40V PNP SURFACE MOUNT TRANSISTOR IN SOT89

文件:151.5 Kbytes Page:6 Pages

DIODES

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40V PNP SURFACE MOUNT TRANSISTOR IN SOT89

文件:151.5 Kbytes Page:6 Pages

DIODES

美台半导体

32V PNP MEDIUM POWER TRANSISTOR IN SOT89

文件:287.93 Kbytes Page:7 Pages

DIODES

美台半导体

32V PNP MEDIUM POWER TRANSISTOR IN SOT89

文件:287.93 Kbytes Page:7 Pages

DIODES

美台半导体

40V PNP SURFACE MOUNT TRANSISTOR IN SOT89

文件:151.5 Kbytes Page:6 Pages

DIODES

美台半导体

40V PNP SURFACE MOUNT TRANSISTOR IN SOT89

文件:151.5 Kbytes Page:6 Pages

DIODES

美台半导体

32V PNP MEDIUM POWER TRANSISTOR IN SOT89

文件:287.93 Kbytes Page:7 Pages

DIODES

美台半导体

40V PNP SURFACE MOUNT TRANSISTOR IN SOT89

文件:151.5 Kbytes Page:6 Pages

DIODES

美台半导体

32V PNP MEDIUM POWER TRANSISTOR IN SOT89

文件:287.93 Kbytes Page:7 Pages

DIODES

美台半导体

40V PNP SURFACE MOUNT TRANSISTOR IN SOT89

文件:151.5 Kbytes Page:6 Pages

DIODES

美台半导体

32V PNP MEDIUM POWER TRANSISTOR IN SOT89

文件:287.93 Kbytes Page:7 Pages

DIODES

美台半导体

40V PNP SURFACE MOUNT TRANSISTOR IN SOT89

文件:151.5 Kbytes Page:6 Pages

DIODES

美台半导体

PNP SURFACE MOUNT TRANSISTOR

文件:158.79 Kbytes Page:5 Pages

DIODES

美台半导体

2DB1产品属性

  • 类型

    描述

  • 型号

    2DB1

  • 制造商

    API TECHNOLOGIES CORP.

  • 功能描述

    Thermistor NTC 100Ohm 10% 2-Pin

更新时间:2025-12-25 14:47:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
DISCRETE
23+
DPAK
5000
原厂授权代理,海外优势订货渠道。可提供大量库存,详
DIDOES
NA
16355
一级代理 原装正品假一罚十价格优势长期供货
原装DIODES
19+
TO-252
20000
DIODES
21+
TO252
5000
只做原装正品,不止网上数量,欢迎电话微信查询!
DIODES/美台
2023+
TO-252
1300
一级代理优势现货,全新正品直营店
DIODES/美台
25+
TO-252
15620
DIODES/美台全新特价2DB1184Q-13即刻询购立享优惠#长期有货
DIODES
24+
TO252
9800
一级代理/全新原装现货/长期供应!
DIODES
15+
TO-252
30000
一级代理,专注军工、汽车、医疗、工业、新能源、电力
DIODES/美台
25+
TO-252-3L
918000
明嘉莱只做原装正品现货
Diodes(美台)
25+
TO-252
500000
源自原厂成本,高价回收工厂呆滞

2DB1数据表相关新闻