Gate Driver Module　2CG010BBC11N

■Features ・Ideal for drive of IGBT and SiC MOSFET ・Gate voltage : +15V/-10V ・ALL-IN-ONE (Built-in isolated DC / DC converter and gate drive circuit) ・Low parasitic capacitance (about 12pF) ; highly resistant to common-mode noise. ・Fast response : about 100nsec(typ) ・The isolation for primary

Gate Driver Module　2CG010BBC12N

■Features ・Ideal for drive of IGBT and SiC MOSFET ・Gate voltage : +15V/-15V ・ALL-IN-ONE (Built-in isolated DC / DC converter and gate drive circuit) ・Low parasitic capacitance (about 12pF) ; highly resistant to common-mode noise. ・Fast response : about 100nsec(typ) ・The isolation for primary

Gate Driver Module　2CG010BBC13N

■Features ・Ideal for drive of IGBT and SiC MOSFET ・Gate voltage : +18V/-4V ・ALL-IN-ONE (Built-in isolated DC / DC converter and gate drive circuit) ・Low parasitic capacitance (about 12pF) ; highly resistant to common-mode noise. ・Fast response : about 100nsec(typ) ・The isolation for primary-

Gate Driver Module　2CG010BBC14N

■Features ・Ideal for drive of IGBT and SiC MOSFET ・Gate voltage : +18V/-2V ・ALL-IN-ONE (Built-in isolated DC / DC converter and gate drive circuit) ・Low parasitic capacitance (about 12pF) ; highly resistant to common-mode noise. ・Fast response : about 100nsec(typ) ・The isolation for primary-

包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：GATE DRIVER (CORE, +15V,-10V) 集成电路（IC） 栅极驱动器