位置：首页 > IC中文资料第7686页 > 28LV010
| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
28LV010 | 3.3V1Megabit(128Kx8-Bit)EEPROM DESCRIPTION: MaxwellTechnologies’28LV010highdensity,3.3V,1MegabitEEPROMmicrocircuitfeaturesagreaterthan100krad(Si)totaldosetolerance,dependinguponspacemission.The28LV010iscapableofin-systemelectricalByteandPageprogrammability.Ithasa128-BytePageProgrammingf | Maxwell Maxwell |  |   |
3.3V1Megabit(128Kx8-Bit)EEPROM DESCRIPTION: MaxwellTechnologies’28LV010highdensity,3.3V,1MegabitEEPROMmicrocircuitfeaturesagreaterthan100krad(Si)totaldosetolerance,dependinguponspacemission.The28LV010iscapableofin-systemelectricalByteandPageprogrammability.Ithasa128-BytePageProgrammingf | Maxwell Maxwell | | | |
3.3V1Megabit(128Kx8-Bit)EEPROM DESCRIPTION: MaxwellTechnologies’28LV010highdensity,3.3V,1MegabitEEPROMmicrocircuitfeaturesagreaterthan100krad(Si)totaldosetolerance,dependinguponspacemission.The28LV010iscapableofin-systemelectricalByteandPageprogrammability.Ithasa128-BytePageProgrammingf | Maxwell Maxwell | | | |
3.3V1Megabit(128Kx8-Bit)EEPROM DESCRIPTION: MaxwellTechnologies’28LV010highdensity,3.3V,1MegabitEEPROMmicrocircuitfeaturesagreaterthan100krad(Si)totaldosetolerance,dependinguponspacemission.The28LV010iscapableofin-systemelectricalByteandPageprogrammability.Ithasa128-BytePageProgrammingf | Maxwell Maxwell | | | |
3.3V1Megabit(128Kx8-Bit)EEPROM DESCRIPTION: MaxwellTechnologies’28LV010highdensity,3.3V,1MegabitEEPROMmicrocircuitfeaturesagreaterthan100krad(Si)totaldosetolerance,dependinguponspacemission.The28LV010iscapableofin-systemelectricalByteandPageprogrammability.Ithasa128-BytePageProgrammingf | Maxwell Maxwell | | | |
3.3V1Megabit(128Kx8-Bit)EEPROM DESCRIPTION: MaxwellTechnologies’28LV010highdensity,3.3V,1MegabitEEPROMmicrocircuitfeaturesagreaterthan100krad(Si)totaldosetolerance,dependinguponspacemission.The28LV010iscapableofin-systemelectricalByteandPageprogrammability.Ithasa128-BytePageProgrammingf | Maxwell Maxwell | | | |
3.3V1Megabit(128Kx8-Bit)EEPROM DESCRIPTION: MaxwellTechnologies’28LV010highdensity,3.3V,1MegabitEEPROMmicrocircuitfeaturesagreaterthan100krad(Si)totaldosetolerance,dependinguponspacemission.The28LV010iscapableofin-systemelectricalByteandPageprogrammability.Ithasa128-BytePageProgrammingf | Maxwell Maxwell | | | |
3.3V1Megabit(128Kx8-Bit)EEPROM DESCRIPTION: MaxwellTechnologies’28LV010highdensity,3.3V,1MegabitEEPROMmicrocircuitfeaturesagreaterthan100krad(Si)totaldosetolerance,dependinguponspacemission.The28LV010iscapableofin-systemelectricalByteandPageprogrammability.Ithasa128-BytePageProgrammingf | Maxwell Maxwell | | | |
3.3V1Megabit(128Kx8-Bit)EEPROM DESCRIPTION: MaxwellTechnologies’28LV010highdensity,3.3V,1MegabitEEPROMmicrocircuitfeaturesagreaterthan100krad(Si)totaldosetolerance,dependinguponspacemission.The28LV010iscapableofin-systemelectricalByteandPageprogrammability.Ithasa128-BytePageProgrammingf | Maxwell Maxwell | | | |
3.3V1Megabit(128Kx8-Bit)EEPROM DESCRIPTION: MaxwellTechnologies’28LV010highdensity,3.3V,1MegabitEEPROMmicrocircuitfeaturesagreaterthan100krad(Si)totaldosetolerance,dependinguponspacemission.The28LV010iscapableofin-systemelectricalByteandPageprogrammability.Ithasa128-BytePageProgrammingf | Maxwell Maxwell | | | |
3.3V1Megabit(128Kx8-Bit)EEPROM DESCRIPTION: MaxwellTechnologies’28LV010highdensity,3.3V,1MegabitEEPROMmicrocircuitfeaturesagreaterthan100krad(Si)totaldosetolerance,dependinguponspacemission.The28LV010iscapableofin-systemelectricalByteandPageprogrammability.Ithasa128-BytePageProgrammingf | Maxwell Maxwell | | | |
3.3V1Megabit(128Kx8-Bit)EEPROM DESCRIPTION: MaxwellTechnologies’28LV010highdensity,3.3V,1MegabitEEPROMmicrocircuitfeaturesagreaterthan100krad(Si)totaldosetolerance,dependinguponspacemission.The28LV010iscapableofin-systemelectricalByteandPageprogrammability.Ithasa128-BytePageProgrammingf | Maxwell Maxwell | | | |
3.3V1Megabit(128Kx8-Bit)EEPROM DESCRIPTION: MaxwellTechnologies’28LV010highdensity,3.3V,1MegabitEEPROMmicrocircuitfeaturesagreaterthan100krad(Si)totaldosetolerance,dependinguponspacemission.The28LV010iscapableofin-systemelectricalByteandPageprogrammability.Ithasa128-BytePageProgrammingf | Maxwell Maxwell | | | |
3.3V1Megabit(128Kx8-Bit)EEPROM DESCRIPTION: MaxwellTechnologies’28LV010highdensity,3.3V,1MegabitEEPROMmicrocircuitfeaturesagreaterthan100krad(Si)totaldosetolerance,dependinguponspacemission.The28LV010iscapableofin-systemelectricalByteandPageprogrammability.Ithasa128-BytePageProgrammingf | Maxwell Maxwell | | | |
3.3V1Megabit(128Kx8-Bit)EEPROM DESCRIPTION: MaxwellTechnologies’28LV010highdensity,3.3V,1MegabitEEPROMmicrocircuitfeaturesagreaterthan100krad(Si)totaldosetolerance,dependinguponspacemission.The28LV010iscapableofin-systemelectricalByteandPageprogrammability.Ithasa128-BytePageProgrammingf | Maxwell Maxwell | | | |
3.3V1Megabit(128Kx8-Bit)EEPROM DESCRIPTION: MaxwellTechnologies’28LV010highdensity,3.3V,1MegabitEEPROMmicrocircuitfeaturesagreaterthan100krad(Si)totaldosetolerance,dependinguponspacemission.The28LV010iscapableofin-systemelectricalByteandPageprogrammability.Ithasa128-BytePageProgrammingf | Maxwell Maxwell | | | |
3.3V1Megabit(128Kx8-Bit)EEPROM DESCRIPTION: MaxwellTechnologies’28LV010highdensity,3.3V,1MegabitEEPROMmicrocircuitfeaturesagreaterthan100krad(Si)totaldosetolerance,dependinguponspacemission.The28LV010iscapableofin-systemelectricalByteandPageprogrammability.Ithasa128-BytePageProgrammingf | Maxwell Maxwell | | | |
3.3V1Megabit(128Kx8-Bit)EEPROM DESCRIPTION: MaxwellTechnologies’28LV010highdensity,3.3V,1MegabitEEPROMmicrocircuitfeaturesagreaterthan100krad(Si)totaldosetolerance,dependinguponspacemission.The28LV010iscapableofin-systemelectricalByteandPageprogrammability.Ithasa128-BytePageProgrammingf | Maxwell Maxwell | | | |
3.3V1Megabit(128Kx8-Bit)EEPROM DESCRIPTION: MaxwellTechnologies’28LV010highdensity,3.3V,1MegabitEEPROMmicrocircuitfeaturesagreaterthan100krad(Si)totaldosetolerance,dependinguponspacemission.The28LV010iscapableofin-systemelectricalByteandPageprogrammability.Ithasa128-BytePageProgrammingf | Maxwell Maxwell | | | |
3.3V1Megabit(128Kx8-Bit)EEPROM DESCRIPTION: MaxwellTechnologies’28LV010highdensity,3.3V,1MegabitEEPROMmicrocircuitfeaturesagreaterthan100krad(Si)totaldosetolerance,dependinguponspacemission.The28LV010iscapableofin-systemelectricalByteandPageprogrammability.Ithasa128-BytePageProgrammingf | Maxwell Maxwell | | | |
3.3V1Megabit(128Kx8-Bit)EEPROM DESCRIPTION: MaxwellTechnologies’28LV010highdensity,3.3V,1MegabitEEPROMmicrocircuitfeaturesagreaterthan100krad(Si)totaldosetolerance,dependinguponspacemission.The28LV010iscapableofin-systemelectricalByteandPageprogrammability.Ithasa128-BytePageProgrammingf | Maxwell Maxwell | | | |
3.3V1Megabit(128Kx8-Bit)EEPROM DESCRIPTION: MaxwellTechnologies’28LV010highdensity,3.3V,1MegabitEEPROMmicrocircuitfeaturesagreaterthan100krad(Si)totaldosetolerance,dependinguponspacemission.The28LV010iscapableofin-systemelectricalByteandPageprogrammability.Ithasa128-BytePageProgrammingf | Maxwell Maxwell | | | |
3.3V1Megabit(128Kx8-Bit)EEPROM DESCRIPTION: MaxwellTechnologies’28LV010highdensity,3.3V,1MegabitEEPROMmicrocircuitfeaturesagreaterthan100krad(Si)totaldosetolerance,dependinguponspacemission.The28LV010iscapableofin-systemelectricalByteandPageprogrammability.Ithasa128-BytePageProgrammingf | Maxwell Maxwell | | | |
3.3V1Megabit(128Kx8-Bit)EEPROM DESCRIPTION: MaxwellTechnologies’28LV010highdensity,3.3V,1MegabitEEPROMmicrocircuitfeaturesagreaterthan100krad(Si)totaldosetolerance,dependinguponspacemission.The28LV010iscapableofin-systemelectricalByteandPageprogrammability.Ithasa128-BytePageProgrammingf | Maxwell Maxwell | | | |
3.3V1Megabit(128Kx8-Bit)EEPROM DESCRIPTION: MaxwellTechnologies’28LV010highdensity,3.3V,1MegabitEEPROMmicrocircuitfeaturesagreaterthan100krad(Si)totaldosetolerance,dependinguponspacemission.The28LV010iscapableofin-systemelectricalByteandPageprogrammability.Ithasa128-BytePageProgrammingf | Maxwell Maxwell | | | |
3.3V1Megabit(128Kx8-Bit)EEPROM DESCRIPTION: MaxwellTechnologies’28LV010highdensity,3.3V,1MegabitEEPROMmicrocircuitfeaturesagreaterthan100krad(Si)totaldosetolerance,dependinguponspacemission.The28LV010iscapableofin-systemelectricalByteandPageprogrammability.Ithasa128-BytePageProgrammingf | Maxwell Maxwell | | | |
3.3V1Megabit(128Kx8-Bit)EEPROM DESCRIPTION: MaxwellTechnologies’28LV010highdensity,3.3V,1MegabitEEPROMmicrocircuitfeaturesagreaterthan100krad(Si)totaldosetolerance,dependinguponspacemission.The28LV010iscapableofin-systemelectricalByteandPageprogrammability.Ithasa128-BytePageProgrammingf | Maxwell Maxwell | | | |
3.3V1Megabit(128Kx8-Bit)EEPROM DESCRIPTION: MaxwellTechnologies’28LV010highdensity,3.3V,1MegabitEEPROMmicrocircuitfeaturesagreaterthan100krad(Si)totaldosetolerance,dependinguponspacemission.The28LV010iscapableofin-systemelectricalByteandPageprogrammability.Ithasa128-BytePageProgrammingf | Maxwell Maxwell | | | |
3.3V1Megabit(128Kx8-Bit)EEPROM DESCRIPTION: MaxwellTechnologies’28LV010highdensity,3.3V,1MegabitEEPROMmicrocircuitfeaturesagreaterthan100krad(Si)totaldosetolerance,dependinguponspacemission.The28LV010iscapableofin-systemelectricalByteandPageprogrammability.Ithasa128-BytePageProgrammingf | Maxwell Maxwell | | | |
3.3V1Megabit(128Kx8-Bit)EEPROM DESCRIPTION: MaxwellTechnologies’28LV010highdensity,3.3V,1MegabitEEPROMmicrocircuitfeaturesagreaterthan100krad(Si)totaldosetolerance,dependinguponspacemission.The28LV010iscapableofin-systemelectricalByteandPageprogrammability.Ithasa128-BytePageProgrammingf | Maxwell Maxwell | | | |
3.3V1Megabit(128Kx8-Bit)EEPROM DESCRIPTION: MaxwellTechnologies’28LV010highdensity,3.3V,1MegabitEEPROMmicrocircuitfeaturesagreaterthan100krad(Si)totaldosetolerance,dependinguponspacemission.The28LV010iscapableofin-systemelectricalByteandPageprogrammability.Ithasa128-BytePageProgrammingf | Maxwell Maxwell | | | |
3.3V1Megabit(128Kx8-Bit)EEPROM DESCRIPTION: MaxwellTechnologies’28LV010highdensity,3.3V,1MegabitEEPROMmicrocircuitfeaturesagreaterthan100krad(Si)totaldosetolerance,dependinguponspacemission.The28LV010iscapableofin-systemelectricalByteandPageprogrammability.Ithasa128-BytePageProgrammingf | Maxwell Maxwell | | | |
3.3V1Megabit(128Kx8-Bit)EEPROM DESCRIPTION: MaxwellTechnologies’28LV010highdensity,3.3V,1MegabitEEPROMmicrocircuitfeaturesagreaterthan100krad(Si)totaldosetolerance,dependinguponspacemission.The28LV010iscapableofin-systemelectricalByteandPageprogrammability.Ithasa128-BytePageProgrammingf | Maxwell Maxwell | | | |
3.3V1Megabit(128Kx8-Bit)EEPROM DESCRIPTION: MaxwellTechnologies’28LV010highdensity,3.3V,1MegabitEEPROMmicrocircuitfeaturesagreaterthan100krad(Si)totaldosetolerance,dependinguponspacemission.The28LV010iscapableofin-systemelectricalByteandPageprogrammability.Ithasa128-BytePageProgrammingf | Maxwell Maxwell | | | |
3.3V1Megabit(128Kx8-Bit)EEPROM DESCRIPTION: MaxwellTechnologies’28LV010highdensity,3.3V,1MegabitEEPROMmicrocircuitfeaturesagreaterthan100krad(Si)totaldosetolerance,dependinguponspacemission.The28LV010iscapableofin-systemelectricalByteandPageprogrammability.Ithasa128-BytePageProgrammingf | Maxwell Maxwell | | | |
3.3V1Megabit(128Kx8-Bit)EEPROM DESCRIPTION: MaxwellTechnologies’28LV010highdensity,3.3V,1MegabitEEPROMmicrocircuitfeaturesagreaterthan100krad(Si)totaldosetolerance,dependinguponspacemission.The28LV010iscapableofin-systemelectricalByteandPageprogrammability.Ithasa128-BytePageProgrammingf | Maxwell Maxwell | | | |
3.3V1Megabit(128Kx8-Bit)EEPROM DESCRIPTION: MaxwellTechnologies’28LV010highdensity,3.3V,1MegabitEEPROMmicrocircuitfeaturesagreaterthan100krad(Si)totaldosetolerance,dependinguponspacemission.The28LV010iscapableofin-systemelectricalByteandPageprogrammability.Ithasa128-BytePageProgrammingf | Maxwell Maxwell | | | |
3.3V1Megabit(128Kx8-Bit)EEPROM DESCRIPTION: MaxwellTechnologies’28LV010highdensity,3.3V,1MegabitEEPROMmicrocircuitfeaturesagreaterthan100krad(Si)totaldosetolerance,dependinguponspacemission.The28LV010iscapableofin-systemelectricalByteandPageprogrammability.Ithasa128-BytePageProgrammingf | Maxwell Maxwell | | | |
3.3V1Megabit(128Kx8-Bit)EEPROM DESCRIPTION: MaxwellTechnologies’28LV010highdensity,3.3V,1MegabitEEPROMmicrocircuitfeaturesagreaterthan100krad(Si)totaldosetolerance,dependinguponspacemission.The28LV010iscapableofin-systemelectricalByteandPageprogrammability.Ithasa128-BytePageProgrammingf | Maxwell Maxwell | | | |
3.3V1Megabit(128Kx8-Bit)EEPROM DESCRIPTION: MaxwellTechnologies’28LV010highdensity,3.3V,1MegabitEEPROMmicrocircuitfeaturesagreaterthan100krad(Si)totaldosetolerance,dependinguponspacemission.The28LV010iscapableofin-systemelectricalByteandPageprogrammability.Ithasa128-BytePageProgrammingf | Maxwell Maxwell | | | |
3.3V1Megabit(128Kx8-Bit)EEPROM DESCRIPTION: MaxwellTechnologies’28LV010highdensity,3.3V,1MegabitEEPROMmicrocircuitfeaturesagreaterthan100krad(Si)totaldosetolerance,dependinguponspacemission.The28LV010iscapableofin-systemelectricalByteandPageprogrammability.Ithasa128-BytePageProgrammingf | Maxwell Maxwell | | | |
3.3V1Megabit(128Kx8-Bit)EEPROM DESCRIPTION: MaxwellTechnologies’28LV010highdensity,3.3V,1MegabitEEPROMmicrocircuitfeaturesagreaterthan100krad(Si)totaldosetolerance,dependinguponspacemission.The28LV010iscapableofin-systemelectricalByteandPageprogrammability.Ithasa128-BytePageProgrammingf | Maxwell Maxwell | | | |
3.3V1Megabit(128Kx8-Bit)EEPROM DESCRIPTION: MaxwellTechnologies’28LV010highdensity,3.3V,1MegabitEEPROMmicrocircuitfeaturesagreaterthan100krad(Si)totaldosetolerance,dependinguponspacemission.The28LV010iscapableofin-systemelectricalByteandPageprogrammability.Ithasa128-BytePageProgrammingf | Maxwell Maxwell | | | |
3.3V1Megabit(128Kx8-Bit)EEPROM DESCRIPTION: MaxwellTechnologies’28LV010highdensity,3.3V,1MegabitEEPROMmicrocircuitfeaturesagreaterthan100krad(Si)totaldosetolerance,dependinguponspacemission.The28LV010iscapableofin-systemelectricalByteandPageprogrammability.Ithasa128-BytePageProgrammingf | Maxwell Maxwell | | | |
3.3V1Megabit(128Kx8-Bit)EEPROM DESCRIPTION: MaxwellTechnologies’28LV010highdensity,3.3V,1MegabitEEPROMmicrocircuitfeaturesagreaterthan100krad(Si)totaldosetolerance,dependinguponspacemission.The28LV010iscapableofin-systemelectricalByteandPageprogrammability.Ithasa128-BytePageProgrammingf | Maxwell Maxwell | | | |
3.3V1Megabit(128Kx8-Bit)EEPROM DESCRIPTION: MaxwellTechnologies’28LV010highdensity,3.3V,1MegabitEEPROMmicrocircuitfeaturesagreaterthan100krad(Si)totaldosetolerance,dependinguponspacemission.The28LV010iscapableofin-systemelectricalByteandPageprogrammability.Ithasa128-BytePageProgrammingf | Maxwell Maxwell | | | |
3.3V1Megabit(128Kx8-Bit)EEPROM DESCRIPTION: MaxwellTechnologies’28LV010highdensity,3.3V,1MegabitEEPROMmicrocircuitfeaturesagreaterthan100krad(Si)totaldosetolerance,dependinguponspacemission.The28LV010iscapableofin-systemelectricalByteandPageprogrammability.Ithasa128-BytePageProgrammingf | Maxwell Maxwell | | | |
3.3V1Megabit(128Kx8-Bit)EEPROM DESCRIPTION: MaxwellTechnologies’28LV010highdensity,3.3V,1MegabitEEPROMmicrocircuitfeaturesagreaterthan100krad(Si)totaldosetolerance,dependinguponspacemission.The28LV010iscapableofin-systemelectricalByteandPageprogrammability.Ithasa128-BytePageProgrammingf | Maxwell Maxwell | | | |
3.3V1Megabit(128Kx8-Bit)EEPROM DESCRIPTION: MaxwellTechnologies’28LV010highdensity,3.3V,1MegabitEEPROMmicrocircuitfeaturesagreaterthan100krad(Si)totaldosetolerance,dependinguponspacemission.The28LV010iscapableofin-systemelectricalByteandPageprogrammability.Ithasa128-BytePageProgrammingf | Maxwell Maxwell | | | |
3.3V1Megabit(128Kx8-Bit)EEPROM DESCRIPTION: MaxwellTechnologies’28LV010highdensity,3.3V,1MegabitEEPROMmicrocircuitfeaturesagreaterthan100krad(Si)totaldosetolerance,dependinguponspacemission.The28LV010iscapableofin-systemelectricalByteandPageprogrammability.Ithasa128-BytePageProgrammingf | Maxwell Maxwell | | | |
3.3V1Megabit(128Kx8-Bit)EEPROM DESCRIPTION: MaxwellTechnologies’28LV010highdensity,3.3V,1MegabitEEPROMmicrocircuitfeaturesagreaterthan100krad(Si)totaldosetolerance,dependinguponspacemission.The28LV010iscapableofin-systemelectricalByteandPageprogrammability.Ithasa128-BytePageProgrammingf | Maxwell Maxwell | | | |
3.3V1Megabit(128Kx8-Bit)EEPROM DESCRIPTION: MaxwellTechnologies’28LV010highdensity,3.3V,1MegabitEEPROMmicrocircuitfeaturesagreaterthan100krad(Si)totaldosetolerance,dependinguponspacemission.The28LV010iscapableofin-systemelectricalByteandPageprogrammability.Ithasa128-BytePageProgrammingf | Maxwell Maxwell | | | |
3.3V1Megabit(128Kx8-Bit)EEPROM DESCRIPTION: MaxwellTechnologies’28LV010highdensity,3.3V,1MegabitEEPROMmicrocircuitfeaturesagreaterthan100krad(Si)totaldosetolerance,dependinguponspacemission.The28LV010iscapableofin-systemelectricalByteandPageprogrammability.Ithasa128-BytePageProgrammingf | Maxwell Maxwell | | | |
3.3V1Megabit(128Kx8-Bit)EEPROM DESCRIPTION: MaxwellTechnologies’28LV010highdensity,3.3V,1MegabitEEPROMmicrocircuitfeaturesagreaterthan100krad(Si)totaldosetolerance,dependinguponspacemission.The28LV010iscapableofin-systemelectricalByteandPageprogrammability.Ithasa128-BytePageProgrammingf | Maxwell Maxwell | | | |
3.3V1Megabit(128Kx8-Bit)EEPROM DESCRIPTION: MaxwellTechnologies’28LV010highdensity,3.3V,1MegabitEEPROMmicrocircuitfeaturesagreaterthan100krad(Si)totaldosetolerance,dependinguponspacemission.The28LV010iscapableofin-systemelectricalByteandPageprogrammability.Ithasa128-BytePageProgrammingf | Maxwell Maxwell | | | |
3.3V1Megabit(128Kx8-Bit)EEPROM DESCRIPTION: MaxwellTechnologies’28LV010highdensity,3.3V,1MegabitEEPROMmicrocircuitfeaturesagreaterthan100krad(Si)totaldosetolerance,dependinguponspacemission.The28LV010iscapableofin-systemelectricalByteandPageprogrammability.Ithasa128-BytePageProgrammingf | Maxwell Maxwell | | | |
3.3V1Megabit(128Kx8-Bit)EEPROM DESCRIPTION: MaxwellTechnologies’28LV010highdensity,3.3V,1MegabitEEPROMmicrocircuitfeaturesagreaterthan100krad(Si)totaldosetolerance,dependinguponspacemission.The28LV010iscapableofin-systemelectricalByteandPageprogrammability.Ithasa128-BytePageProgrammingf | Maxwell Maxwell | | | |
3.3V1Megabit(128Kx8-Bit)EEPROM DESCRIPTION: MaxwellTechnologies’28LV010highdensity,3.3V,1MegabitEEPROMmicrocircuitfeaturesagreaterthan100krad(Si)totaldosetolerance,dependinguponspacemission.The28LV010iscapableofin-systemelectricalByteandPageprogrammability.Ithasa128-BytePageProgrammingf | Maxwell Maxwell | | | |
3.3V1Megabit(128Kx8-Bit)EEPROM DESCRIPTION: MaxwellTechnologies’28LV010highdensity,3.3V,1MegabitEEPROMmicrocircuitfeaturesagreaterthan100krad(Si)totaldosetolerance,dependinguponspacemission.The28LV010iscapableofin-systemelectricalByteandPageprogrammability.Ithasa128-BytePageProgrammingf | Maxwell Maxwell | | | |
3.3V1Megabit(128Kx8-Bit)EEPROM DESCRIPTION: MaxwellTechnologies’28LV010highdensity,3.3V,1MegabitEEPROMmicrocircuitfeaturesagreaterthan100krad(Si)totaldosetolerance,dependinguponspacemission.The28LV010iscapableofin-systemelectricalByteandPageprogrammability.Ithasa128-BytePageProgrammingf | Maxwell Maxwell | | |
28LV010产品属性
- 类型
描述
- 型号
28LV010
- 制造商
MAXWELL
- 制造商全称
Maxwell Technologies
- 功能描述
3.3V 1 Megabit(128K x 8-Bit) EEPROM
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
MICROCHIP/微芯 |
22+ |
TSOP |
3000 |
一级代理原厂VIP渠道,专注军工、汽车、医疗、工业、 |
|||
MICROCHIP |
00+ |
PLCC32 |
33 |
全新原装100真实现货供应 |
|||
MICROCHIP |
2339+ |
PLCC32 |
4326 |
公司原厂原装现货假一罚十!特价出售!强势库存! |
|||
MROCHIP/微芯 |
23+ |
NA/ |
162 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
|||
CATALYST |
23+ |
原厂原包 |
19960 |
只做进口原装 终端工厂免费送样 |
|||
MICROCHIP |
23+ |
32PLCC |
7696 |
原装现货 |
|||
MICROCHI |
23+ |
PLCC32 |
5000 |
原装现货,优势热卖 |
|||
MICROCHIP |
2021+ |
PLCC32 |
6540 |
原装现货/欢迎来电咨询 |
|||
MACWELL |
22+ |
CFOP |
12245 |
现货,原厂原装假一罚十! |
|||
MICROCHIP |
2022+ |
PLCC32 |
2820 |
OEM库存,进口原装房间现货! |
28LV010芯片相关品牌
28LV010规格书下载地址
28LV010参数引脚图相关
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- 28LV010RPFB25
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- 28LV010RPDS-20
- 28LV010RPDS20
- 28LV010RPDI-25
- 28LV010RPDI25
- 28LV010RPDI-20
- 28LV010RPDI20
- 28LV010RPDE-25
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- 28LV010RPDE20
- 28LV010RPDB-25
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- 28LV010RPDB-20
- 28LV010RPDB20
- 28JR145-1
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- 28JR140-1
- 28JR137-2
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- 28JR127-1
- 28JR123-1
- 28JR121-2
- 28JR115-1
- 28JR102-2
- 28-I-24D
- 28-I-24A
- 28-I-12D
- 28-I-120A
- 28HSR8G-F-T-25.000-X
- 28HSR8G-F-25.000-X
- 28HSR8G-E-T-25.000-X
- 28HSR8G-E-25.000-X
- 28HSR8G-D-T-25.000-X
- 28HSR8G-D-25.000-X
- 28G6H1
- 28G6H
- 28F6H1
- 28F6H
- 28F5H1
- 28F5H
- 28F512
- 28F256
- 28F128
- 28F020
- 28F010
- 28E7H
- 28D-3W
- 28D-1W
- 28CPQ
- 28C64B
- 28C64A
- 28C64
- 28C256T
- 28C256
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