5 Volt, Byte Alterable E2PROM

DESCRIPTION The X28HC256 is a second generation high performance CMOS 32K x 8 E2PROM. It is fabricated with Xicor’s proprietary, textured poly floating gate technology, providing a highly reliable 5 Volt only nonvolatile memory. FEATURES • Access Time: 70ns • Simple Byte and Page Write —Si

5 Volt, Byte Alterable EEPROM

5V, Byte Alterable EEPROM The X28HC256 is a second generation high performance CMOS 32k x 8 EEPROM. It is fabricated with Intersil’s proprietary, textured poly floating gate technology, providing a highly reliable 5V only nonvolatile memory Features • Access time: 70ns • Simple byte and pa

LOW POWER CMOS EEPROM with hi-speed page write capability 256K EEPROM

The X28HC256 is a second generation high performance CMOS 32k x 8 EEPROM. It is fabricated with Intersil’s proprietary, textured poly floating gate technology, providing a highly reliable 5V only nonvolatile memory. The X28HC256 supports a 128-byte page write operation, effectively providing a 24µ

5 Volt, Byte Alterable EEPROM

文件：2.12346 Mbytes Page：23 Pages

5V, Byte Alterable EEPROM

文件：410.17 Kbytes Page：20 Pages