位置:首页 > IC中文资料第7288页 > 28F640
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
3 Volt Intel Advanced Boot Block Flash Memory Device Description This section provides an overview of the Intel® Advanced+ Boot Block Flash Memory (C3) device features, packaging, signal naming, and device architecture. Product Overview The C3 device provides high-performance asynchronous reads in package-compatible densities with a 16 bit | Intel 英特尔 | |||
Advanced Boot Block Flash Memory (C3) The 0.25 µm 3 Volt Advanced+ Boot Block, manufactured on Intel’s latest 0.25 µ technology, represents a feature-rich solution at overall lower system cost. Smart 3 flash memory devices incorporate low voltage capability (2.7 V read, program and erase) with high-speed, low-power operation. Flexible | Intel 英特尔 | |||
StrataFlash Wireless Memory The Intel StrataFlash® wireless memory (L18) device is the latest generation of Intel StrataFlash® memory devices featuring flexible, multiple-partition, dual operation. It provides high performance synchronous-burst read mode and asynchronous read mode using 1.8 V low voltage, multi-level cell (M | Intel 英特尔 | |||
1.8 Volt Intel StrataFlash짰 Wireless Memory with 3.0-Volt I/O (L30) The 1.8 Volt Intel StrataFlash® wireless memory with 3-Volt I/O product is the latest generation of Intel StrataFlash® memory devices featuring flexible, multiple-partition, dual operation. It provides high performance synchronous-burst read mode and asynchronous read mode using 1.8 volt low-volta | Intel 英特尔 | |||
Intel StrataFlash Embedded Memory Introduction This document provides information about the Intel StrataFlash® Embedded Memory (P30) device and describes its features, operation, and specifications. Product Features ■ High performance — 85/88 ns initial access — 40 MHz with zero wait states, 20 ns clock-to data output | Intel 英特尔 | |||
1.8 Volt Intel Wireless Flash Memory with 3 Volt I/O and SRAM (W30) 文件:749.85 Kbytes Page:82 Pages | Intel 英特尔 | |||
Intel StrataFlash Memory (J3) 文件:905.78 Kbytes Page:72 Pages | Intel 英特尔 | |||
5 Volt Intel StrataFlash짰 Memory 文件:617.95 Kbytes Page:51 Pages | Intel 英特尔 | |||
INTEL StrataFlash MEMORY TECHNOLOGY 32 AND 64 MBIT | Intel 英特尔 | |||
Intel StrataFlash Embedded Memory | Intel 英特尔 | |||
1.8 Volt Intel Wireless Flash Memory with 3 Volt I/O and SRAM (W30) 文件:749.85 Kbytes Page:82 Pages | Intel 英特尔 | |||
Numonyx Wireless Flash Memory (W30) 文件:1.39832 Mbytes Page:102 Pages | NUMONYX | |||
64Mbit (4Mbitx16/8Mbitx8) Page Flash Memory 64Mbit (4Mbit×16/8Mbit×8) Page Mode Flash MEMORY The product, which is Page Mode Flash memory, is a high density, low cost, nonvolatile read/write storage solution for a wide range of applications. The product can operate at VCC=2.7V-3.6V and VPEN=2.7V-3.6V The product supports high performance | SHARPSharp Corporation 夏普 |
28F640产品属性
- 类型
描述
- 型号
28F640
- 制造商
INTEL
- 制造商全称
Intel Corporation
- 功能描述
1.8 Volt Intel Wireless Flash Memory with 3 Volt I/O and SRAM(W30)
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
INTEL/英特尔 |
24+ |
NA/ |
311 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
|||
INTEL |
2016+ |
BGA |
6000 |
只做原装,假一罚十,公司可开17%增值税发票! |
|||
INTEL/英特尔 |
22+ |
PLCC |
100000 |
代理渠道/只做原装/可含税 |
|||
INTEL/英特尔 |
25+ |
BGA |
996880 |
只做原装,欢迎来电资询 |
|||
INTER |
22+ |
BGA |
30000 |
十七年VIP会员,诚信经营,一手货源,原装正品可零售! |
|||
INTEL/英特尔 |
23+ |
BGA |
98900 |
原厂原装正品现货!! |
|||
INTER |
25+ |
BGA |
30000 |
代理原装现货,价格优势 |
|||
Intel |
25+ |
56 |
公司优势库存 热卖中!! |
||||
INTEL |
NEW |
N/A |
9526 |
代理全系列销售,全新原装正品,价格优势,长期供应,量大可订 |
|||
INTEL/英特尔 |
25+ |
NA |
880000 |
明嘉莱只做原装正品现货 |
28F640芯片相关品牌
28F640规格书下载地址
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28F640数据表相关新闻
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DdatasheetPDF页码索引
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