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型号	功能描述	生产厂家企业	LOGO
27C16	16,384-Bit (2048 x 8) UV Erasable CMOS PROM Military Qualified General Description\nThe 27C16 is a high speed 16K UV erasable and electrically reprogrammable CMOS EPROM, ideally suited for applications where fast turnaround, pattern experimentation and low power consumption are important requirements. Access time down to 450 ns\nLow CMOS power consumption\n Active Power: 26.25 mW max\n Standby Power: 0.53 mW max (98% savings)\nPerformance compatible to NSC800TM CMOS microprocessor\nSingle 5V power supply\nPin compatible to MM2716 and higher density EPROMs\nStaticÐno clocks required\nTTL c;	TI 德州仪器	TI
27C16	16,384-Bit (2048 x 8) UV Erasable CMOS PROM Military Qualified 文件：111.24 Kbytes Page：8 Pages	NSC 国半	NSC
27C160	16 Mbit 2Mb x8 or 1Mb x16 UV EPROM and OTP EPROM DESCRIPTION The M27C160 is a 16 Mbit EPROM offered in the two ranges UV (ultra violet erase) and OTP (one time programmable). It is ideally suited for micro processor systems requiring large data or program storage and is organised as either 2 Mbit words of 8 bit or 1 Mbit words of 16 bit. The	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
27C1610-10	16M-BIT [2M x 8/1M x 16] CMOS OTP ROM GENERAL DESCRIPTION The MX27C1610 is a 16M-bit, One Time Programmable Read Only Memory. It is organized as 2M x 8 or 1M x 16 and has a static standby mode, and features fast programming. For programming outside from the system, existing EPROM programmers may be used. The MX27C1610 supports a inte	MCNIX ????????????旺宏电子	MCNIX
27C1610-12	16M-BIT [2M x 8/1M x 16] CMOS OTP ROM GENERAL DESCRIPTION The MX27C1610 is a 16M-bit, One Time Programmable Read Only Memory. It is organized as 2M x 8 or 1M x 16 and has a static standby mode, and features fast programming. For programming outside from the system, existing EPROM programmers may be used. The MX27C1610 supports a inte	MCNIX ????????????旺宏电子	MCNIX
27C16A-15IL	16K (2K x 8) CMOS EEPROM DESCRIPTION The Microchip Technology Inc. 28C16A is a CMOS 16K non-volatile electrically Erasable PROM. The 28C16A is accessed like a static RAM for the read or write cycles without the need of external components. Dur ing a “byte write”, the address and data are latched internally, freeing the m	MICROCHIP 微芯科技	MICROCHIP
27C16A-15IP	16K (2K x 8) CMOS EEPROM DESCRIPTION The Microchip Technology Inc. 28C16A is a CMOS 16K non-volatile electrically Erasable PROM. The 28C16A is accessed like a static RAM for the read or write cycles without the need of external components. Dur ing a “byte write”, the address and data are latched internally, freeing the m	MICROCHIP 微芯科技	MICROCHIP
27C16A-15ITS	16K (2K x 8) CMOS EEPROM DESCRIPTION The Microchip Technology Inc. 28C16A is a CMOS 16K non-volatile electrically Erasable PROM. The 28C16A is accessed like a static RAM for the read or write cycles without the need of external components. Dur ing a “byte write”, the address and data are latched internally, freeing the m	MICROCHIP 微芯科技	MICROCHIP
27C16A-15IVS	16K (2K x 8) CMOS EEPROM DESCRIPTION The Microchip Technology Inc. 28C16A is a CMOS 16K non-volatile electrically Erasable PROM. The 28C16A is accessed like a static RAM for the read or write cycles without the need of external components. Dur ing a “byte write”, the address and data are latched internally, freeing the m	MICROCHIP 微芯科技	MICROCHIP
27C16A-15L	16K (2K x 8) CMOS EEPROM DESCRIPTION The Microchip Technology Inc. 28C16A is a CMOS 16K non-volatile electrically Erasable PROM. The 28C16A is accessed like a static RAM for the read or write cycles without the need of external components. Dur ing a “byte write”, the address and data are latched internally, freeing the m	MICROCHIP 微芯科技	MICROCHIP
27C16A-15P	16K (2K x 8) CMOS EEPROM DESCRIPTION The Microchip Technology Inc. 28C16A is a CMOS 16K non-volatile electrically Erasable PROM. The 28C16A is accessed like a static RAM for the read or write cycles without the need of external components. Dur ing a “byte write”, the address and data are latched internally, freeing the m	MICROCHIP 微芯科技	MICROCHIP
27C16A-15TS	16K (2K x 8) CMOS EEPROM DESCRIPTION The Microchip Technology Inc. 28C16A is a CMOS 16K non-volatile electrically Erasable PROM. The 28C16A is accessed like a static RAM for the read or write cycles without the need of external components. Dur ing a “byte write”, the address and data are latched internally, freeing the m	MICROCHIP 微芯科技	MICROCHIP
27C16A-15VS	16K (2K x 8) CMOS EEPROM DESCRIPTION The Microchip Technology Inc. 28C16A is a CMOS 16K non-volatile electrically Erasable PROM. The 28C16A is accessed like a static RAM for the read or write cycles without the need of external components. Dur ing a “byte write”, the address and data are latched internally, freeing the m	MICROCHIP 微芯科技	MICROCHIP
27C16A-20IL	16K (2K x 8) CMOS EEPROM DESCRIPTION The Microchip Technology Inc. 28C16A is a CMOS 16K non-volatile electrically Erasable PROM. The 28C16A is accessed like a static RAM for the read or write cycles without the need of external components. Dur ing a “byte write”, the address and data are latched internally, freeing the m	MICROCHIP 微芯科技	MICROCHIP
27C16A-20IP	16K (2K x 8) CMOS EEPROM DESCRIPTION The Microchip Technology Inc. 28C16A is a CMOS 16K non-volatile electrically Erasable PROM. The 28C16A is accessed like a static RAM for the read or write cycles without the need of external components. Dur ing a “byte write”, the address and data are latched internally, freeing the m	MICROCHIP 微芯科技	MICROCHIP
27C16A-20ITS	16K (2K x 8) CMOS EEPROM DESCRIPTION The Microchip Technology Inc. 28C16A is a CMOS 16K non-volatile electrically Erasable PROM. The 28C16A is accessed like a static RAM for the read or write cycles without the need of external components. Dur ing a “byte write”, the address and data are latched internally, freeing the m	MICROCHIP 微芯科技	MICROCHIP
27C16A-20IVS	16K (2K x 8) CMOS EEPROM DESCRIPTION The Microchip Technology Inc. 28C16A is a CMOS 16K non-volatile electrically Erasable PROM. The 28C16A is accessed like a static RAM for the read or write cycles without the need of external components. Dur ing a “byte write”, the address and data are latched internally, freeing the m	MICROCHIP 微芯科技	MICROCHIP
27C16A-20L	16K (2K x 8) CMOS EEPROM DESCRIPTION The Microchip Technology Inc. 28C16A is a CMOS 16K non-volatile electrically Erasable PROM. The 28C16A is accessed like a static RAM for the read or write cycles without the need of external components. Dur ing a “byte write”, the address and data are latched internally, freeing the m	MICROCHIP 微芯科技	MICROCHIP
27C16A-20P	16K (2K x 8) CMOS EEPROM DESCRIPTION The Microchip Technology Inc. 28C16A is a CMOS 16K non-volatile electrically Erasable PROM. The 28C16A is accessed like a static RAM for the read or write cycles without the need of external components. Dur ing a “byte write”, the address and data are latched internally, freeing the m	MICROCHIP 微芯科技	MICROCHIP
27C16A-20TS	16K (2K x 8) CMOS EEPROM DESCRIPTION The Microchip Technology Inc. 28C16A is a CMOS 16K non-volatile electrically Erasable PROM. The 28C16A is accessed like a static RAM for the read or write cycles without the need of external components. Dur ing a “byte write”, the address and data are latched internally, freeing the m	MICROCHIP 微芯科技	MICROCHIP
27C16A-20VS	16K (2K x 8) CMOS EEPROM DESCRIPTION The Microchip Technology Inc. 28C16A is a CMOS 16K non-volatile electrically Erasable PROM. The 28C16A is accessed like a static RAM for the read or write cycles without the need of external components. Dur ing a “byte write”, the address and data are latched internally, freeing the m	MICROCHIP 微芯科技	MICROCHIP
27C16A-25IL	16K (2K x 8) CMOS EEPROM DESCRIPTION The Microchip Technology Inc. 28C16A is a CMOS 16K non-volatile electrically Erasable PROM. The 28C16A is accessed like a static RAM for the read or write cycles without the need of external components. Dur ing a “byte write”, the address and data are latched internally, freeing the m	MICROCHIP 微芯科技	MICROCHIP
27C16A-25IP	16K (2K x 8) CMOS EEPROM DESCRIPTION The Microchip Technology Inc. 28C16A is a CMOS 16K non-volatile electrically Erasable PROM. The 28C16A is accessed like a static RAM for the read or write cycles without the need of external components. Dur ing a “byte write”, the address and data are latched internally, freeing the m	MICROCHIP 微芯科技	MICROCHIP
27C16A-25ITS	16K (2K x 8) CMOS EEPROM DESCRIPTION The Microchip Technology Inc. 28C16A is a CMOS 16K non-volatile electrically Erasable PROM. The 28C16A is accessed like a static RAM for the read or write cycles without the need of external components. Dur ing a “byte write”, the address and data are latched internally, freeing the m	MICROCHIP 微芯科技	MICROCHIP
27C16A-25IVS	16K (2K x 8) CMOS EEPROM DESCRIPTION The Microchip Technology Inc. 28C16A is a CMOS 16K non-volatile electrically Erasable PROM. The 28C16A is accessed like a static RAM for the read or write cycles without the need of external components. Dur ing a “byte write”, the address and data are latched internally, freeing the m	MICROCHIP 微芯科技	MICROCHIP
27C16A-25L	16K (2K x 8) CMOS EEPROM DESCRIPTION The Microchip Technology Inc. 28C16A is a CMOS 16K non-volatile electrically Erasable PROM. The 28C16A is accessed like a static RAM for the read or write cycles without the need of external components. Dur ing a “byte write”, the address and data are latched internally, freeing the m	MICROCHIP 微芯科技	MICROCHIP
27C16A-25P	16K (2K x 8) CMOS EEPROM DESCRIPTION The Microchip Technology Inc. 28C16A is a CMOS 16K non-volatile electrically Erasable PROM. The 28C16A is accessed like a static RAM for the read or write cycles without the need of external components. Dur ing a “byte write”, the address and data are latched internally, freeing the m	MICROCHIP 微芯科技	MICROCHIP
27C16A-25TS	16K (2K x 8) CMOS EEPROM DESCRIPTION The Microchip Technology Inc. 28C16A is a CMOS 16K non-volatile electrically Erasable PROM. The 28C16A is accessed like a static RAM for the read or write cycles without the need of external components. Dur ing a “byte write”, the address and data are latched internally, freeing the m	MICROCHIP 微芯科技	MICROCHIP
27C16A-25VS	16K (2K x 8) CMOS EEPROM DESCRIPTION The Microchip Technology Inc. 28C16A is a CMOS 16K non-volatile electrically Erasable PROM. The 28C16A is accessed like a static RAM for the read or write cycles without the need of external components. Dur ing a “byte write”, the address and data are latched internally, freeing the m	MICROCHIP 微芯科技	MICROCHIP
27C16AF-15IL	16K (2K x 8) CMOS EEPROM DESCRIPTION The Microchip Technology Inc. 28C16A is a CMOS 16K non-volatile electrically Erasable PROM. The 28C16A is accessed like a static RAM for the read or write cycles without the need of external components. Dur ing a “byte write”, the address and data are latched internally, freeing the m	MICROCHIP 微芯科技	MICROCHIP
27C16AF-15IP	16K (2K x 8) CMOS EEPROM DESCRIPTION The Microchip Technology Inc. 28C16A is a CMOS 16K non-volatile electrically Erasable PROM. The 28C16A is accessed like a static RAM for the read or write cycles without the need of external components. Dur ing a “byte write”, the address and data are latched internally, freeing the m	MICROCHIP 微芯科技	MICROCHIP
27C16AF-15ITS	16K (2K x 8) CMOS EEPROM DESCRIPTION The Microchip Technology Inc. 28C16A is a CMOS 16K non-volatile electrically Erasable PROM. The 28C16A is accessed like a static RAM for the read or write cycles without the need of external components. Dur ing a “byte write”, the address and data are latched internally, freeing the m	MICROCHIP 微芯科技	MICROCHIP
27C16AF-15IVS	16K (2K x 8) CMOS EEPROM DESCRIPTION The Microchip Technology Inc. 28C16A is a CMOS 16K non-volatile electrically Erasable PROM. The 28C16A is accessed like a static RAM for the read or write cycles without the need of external components. Dur ing a “byte write”, the address and data are latched internally, freeing the m	MICROCHIP 微芯科技	MICROCHIP
27C16AF-15L	16K (2K x 8) CMOS EEPROM DESCRIPTION The Microchip Technology Inc. 28C16A is a CMOS 16K non-volatile electrically Erasable PROM. The 28C16A is accessed like a static RAM for the read or write cycles without the need of external components. Dur ing a “byte write”, the address and data are latched internally, freeing the m	MICROCHIP 微芯科技	MICROCHIP
27C16AF-15P	16K (2K x 8) CMOS EEPROM DESCRIPTION The Microchip Technology Inc. 28C16A is a CMOS 16K non-volatile electrically Erasable PROM. The 28C16A is accessed like a static RAM for the read or write cycles without the need of external components. Dur ing a “byte write”, the address and data are latched internally, freeing the m	MICROCHIP 微芯科技	MICROCHIP
27C16AF-15TS	16K (2K x 8) CMOS EEPROM DESCRIPTION The Microchip Technology Inc. 28C16A is a CMOS 16K non-volatile electrically Erasable PROM. The 28C16A is accessed like a static RAM for the read or write cycles without the need of external components. Dur ing a “byte write”, the address and data are latched internally, freeing the m	MICROCHIP 微芯科技	MICROCHIP
27C16AF-15VS	16K (2K x 8) CMOS EEPROM DESCRIPTION The Microchip Technology Inc. 28C16A is a CMOS 16K non-volatile electrically Erasable PROM. The 28C16A is accessed like a static RAM for the read or write cycles without the need of external components. Dur ing a “byte write”, the address and data are latched internally, freeing the m	MICROCHIP 微芯科技	MICROCHIP
27C16AF-20IL	16K (2K x 8) CMOS EEPROM DESCRIPTION The Microchip Technology Inc. 28C16A is a CMOS 16K non-volatile electrically Erasable PROM. The 28C16A is accessed like a static RAM for the read or write cycles without the need of external components. Dur ing a “byte write”, the address and data are latched internally, freeing the m	MICROCHIP 微芯科技	MICROCHIP
27C16AF-20IP	16K (2K x 8) CMOS EEPROM DESCRIPTION The Microchip Technology Inc. 28C16A is a CMOS 16K non-volatile electrically Erasable PROM. The 28C16A is accessed like a static RAM for the read or write cycles without the need of external components. Dur ing a “byte write”, the address and data are latched internally, freeing the m	MICROCHIP 微芯科技	MICROCHIP
27C16AF-20ITS	16K (2K x 8) CMOS EEPROM DESCRIPTION The Microchip Technology Inc. 28C16A is a CMOS 16K non-volatile electrically Erasable PROM. The 28C16A is accessed like a static RAM for the read or write cycles without the need of external components. Dur ing a “byte write”, the address and data are latched internally, freeing the m	MICROCHIP 微芯科技	MICROCHIP
27C16AF-20IVS	16K (2K x 8) CMOS EEPROM DESCRIPTION The Microchip Technology Inc. 28C16A is a CMOS 16K non-volatile electrically Erasable PROM. The 28C16A is accessed like a static RAM for the read or write cycles without the need of external components. Dur ing a “byte write”, the address and data are latched internally, freeing the m	MICROCHIP 微芯科技	MICROCHIP
27C16AF-20L	16K (2K x 8) CMOS EEPROM DESCRIPTION The Microchip Technology Inc. 28C16A is a CMOS 16K non-volatile electrically Erasable PROM. The 28C16A is accessed like a static RAM for the read or write cycles without the need of external components. Dur ing a “byte write”, the address and data are latched internally, freeing the m	MICROCHIP 微芯科技	MICROCHIP
27C16AF-20P	16K (2K x 8) CMOS EEPROM DESCRIPTION The Microchip Technology Inc. 28C16A is a CMOS 16K non-volatile electrically Erasable PROM. The 28C16A is accessed like a static RAM for the read or write cycles without the need of external components. Dur ing a “byte write”, the address and data are latched internally, freeing the m	MICROCHIP 微芯科技	MICROCHIP
27C16AF-20TS	16K (2K x 8) CMOS EEPROM DESCRIPTION The Microchip Technology Inc. 28C16A is a CMOS 16K non-volatile electrically Erasable PROM. The 28C16A is accessed like a static RAM for the read or write cycles without the need of external components. Dur ing a “byte write”, the address and data are latched internally, freeing the m	MICROCHIP 微芯科技	MICROCHIP
27C16AF-20VS	16K (2K x 8) CMOS EEPROM DESCRIPTION The Microchip Technology Inc. 28C16A is a CMOS 16K non-volatile electrically Erasable PROM. The 28C16A is accessed like a static RAM for the read or write cycles without the need of external components. Dur ing a “byte write”, the address and data are latched internally, freeing the m	MICROCHIP 微芯科技	MICROCHIP
27C16AF-25IL	16K (2K x 8) CMOS EEPROM DESCRIPTION The Microchip Technology Inc. 28C16A is a CMOS 16K non-volatile electrically Erasable PROM. The 28C16A is accessed like a static RAM for the read or write cycles without the need of external components. Dur ing a “byte write”, the address and data are latched internally, freeing the m	MICROCHIP 微芯科技	MICROCHIP
27C16AF-25IP	16K (2K x 8) CMOS EEPROM DESCRIPTION The Microchip Technology Inc. 28C16A is a CMOS 16K non-volatile electrically Erasable PROM. The 28C16A is accessed like a static RAM for the read or write cycles without the need of external components. Dur ing a “byte write”, the address and data are latched internally, freeing the m	MICROCHIP 微芯科技	MICROCHIP
27C16AF-25ITS	16K (2K x 8) CMOS EEPROM DESCRIPTION The Microchip Technology Inc. 28C16A is a CMOS 16K non-volatile electrically Erasable PROM. The 28C16A is accessed like a static RAM for the read or write cycles without the need of external components. Dur ing a “byte write”, the address and data are latched internally, freeing the m	MICROCHIP 微芯科技	MICROCHIP
27C16AF-25IVS	16K (2K x 8) CMOS EEPROM DESCRIPTION The Microchip Technology Inc. 28C16A is a CMOS 16K non-volatile electrically Erasable PROM. The 28C16A is accessed like a static RAM for the read or write cycles without the need of external components. Dur ing a “byte write”, the address and data are latched internally, freeing the m	MICROCHIP 微芯科技	MICROCHIP
27C16AF-25L	16K (2K x 8) CMOS EEPROM DESCRIPTION The Microchip Technology Inc. 28C16A is a CMOS 16K non-volatile electrically Erasable PROM. The 28C16A is accessed like a static RAM for the read or write cycles without the need of external components. Dur ing a “byte write”, the address and data are latched internally, freeing the m	MICROCHIP 微芯科技	MICROCHIP
27C16AF-25P	16K (2K x 8) CMOS EEPROM DESCRIPTION The Microchip Technology Inc. 28C16A is a CMOS 16K non-volatile electrically Erasable PROM. The 28C16A is accessed like a static RAM for the read or write cycles without the need of external components. Dur ing a “byte write”, the address and data are latched internally, freeing the m	MICROCHIP 微芯科技	MICROCHIP
27C16AF-25TS	16K (2K x 8) CMOS EEPROM DESCRIPTION The Microchip Technology Inc. 28C16A is a CMOS 16K non-volatile electrically Erasable PROM. The 28C16A is accessed like a static RAM for the read or write cycles without the need of external components. Dur ing a “byte write”, the address and data are latched internally, freeing the m	MICROCHIP 微芯科技	MICROCHIP
27C16AF-25VS	16K (2K x 8) CMOS EEPROM DESCRIPTION The Microchip Technology Inc. 28C16A is a CMOS 16K non-volatile electrically Erasable PROM. The 28C16A is accessed like a static RAM for the read or write cycles without the need of external components. Dur ing a “byte write”, the address and data are latched internally, freeing the m	MICROCHIP 微芯科技	MICROCHIP
27C16AFT-15IL	16K (2K x 8) CMOS EEPROM DESCRIPTION The Microchip Technology Inc. 28C16A is a CMOS 16K non-volatile electrically Erasable PROM. The 28C16A is accessed like a static RAM for the read or write cycles without the need of external components. Dur ing a “byte write”, the address and data are latched internally, freeing the m	MICROCHIP 微芯科技	MICROCHIP
27C16AFT-15IP	16K (2K x 8) CMOS EEPROM DESCRIPTION The Microchip Technology Inc. 28C16A is a CMOS 16K non-volatile electrically Erasable PROM. The 28C16A is accessed like a static RAM for the read or write cycles without the need of external components. Dur ing a “byte write”, the address and data are latched internally, freeing the m	MICROCHIP 微芯科技	MICROCHIP
27C16AFT-15ITS	16K (2K x 8) CMOS EEPROM DESCRIPTION The Microchip Technology Inc. 28C16A is a CMOS 16K non-volatile electrically Erasable PROM. The 28C16A is accessed like a static RAM for the read or write cycles without the need of external components. Dur ing a “byte write”, the address and data are latched internally, freeing the m	MICROCHIP 微芯科技	MICROCHIP
27C16AFT-15IVS	16K (2K x 8) CMOS EEPROM DESCRIPTION The Microchip Technology Inc. 28C16A is a CMOS 16K non-volatile electrically Erasable PROM. The 28C16A is accessed like a static RAM for the read or write cycles without the need of external components. Dur ing a “byte write”, the address and data are latched internally, freeing the m	MICROCHIP 微芯科技	MICROCHIP
27C16AFT-15L	16K (2K x 8) CMOS EEPROM DESCRIPTION The Microchip Technology Inc. 28C16A is a CMOS 16K non-volatile electrically Erasable PROM. The 28C16A is accessed like a static RAM for the read or write cycles without the need of external components. Dur ing a “byte write”, the address and data are latched internally, freeing the m	MICROCHIP 微芯科技	MICROCHIP
27C16AFT-15P	16K (2K x 8) CMOS EEPROM DESCRIPTION The Microchip Technology Inc. 28C16A is a CMOS 16K non-volatile electrically Erasable PROM. The 28C16A is accessed like a static RAM for the read or write cycles without the need of external components. Dur ing a “byte write”, the address and data are latched internally, freeing the m	MICROCHIP 微芯科技	MICROCHIP
27C16AFT-15TS	16K (2K x 8) CMOS EEPROM DESCRIPTION The Microchip Technology Inc. 28C16A is a CMOS 16K non-volatile electrically Erasable PROM. The 28C16A is accessed like a static RAM for the read or write cycles without the need of external components. Dur ing a “byte write”, the address and data are latched internally, freeing the m	MICROCHIP 微芯科技	MICROCHIP

27C16产品属性

类型
描述
型号
27C16
制造商
NSC
制造商全称
National Semiconductor
功能描述
16,384-Bit(2048 x 8) UV Erasable CMOS PROM Military Qualified

27C16供应商更多...

更新时间：2026-5-14 19:34:00

IC供应商	芯片型号	品牌	批号	封装	库存	备注	价格
深圳市联世界科技有限公司	27C2000DC12	MX	24+/25+		259	原装正品现货库存价优	询价
深圳市豪迈兴电子有限公司	27C2000APC-90	MX	24+	DIP	4326	公司原厂原装现货假一罚十!特价出售!强势库存!	询价
深圳市腾亿芯科技有限公司	27C2000PC-90	MXIC/旺宏	25+	-	20000	原装	询价
深圳市赛特兴科技有限公司	27C2001	ST	23+	DIP	16900	正规渠道,只有原装!	询价
深圳市振宏微科技有限公司	27C2000QC-70	PLCC-32	23+	NA	15659	振宏微专业只做正品,假一罚百!	询价
深圳市明嘉莱科技有限公司	27C16Q-35	NS/国半	25+	DIP	880000	明嘉莱只做原装正品现货	询价
深圳市凯睿晟科技有限公司	27C2000PC-90	MXIC/旺宏	21+	-	120000	长期代理优势供应	询价
深圳市佳鑫美电子科技有限公司	27C2000PC-12	MX	25+	DIP32	3629	原装优势!房间现货!欢迎来电!	询价
深圳市欧立现代科技有限公司	27C2001-10F1	ST	24+		6980	原装现货,可开13%税票	询价
深圳市创新迹电子有限公司	27C16BQ-150	FSC	22+	原厂原装	20000	公司只有原装品质保证	询价

27C16芯片相关品牌

27C16规格书下载地址

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27C16数据表相关新闻

28.901.U166.10
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27C040Q100，27C128JL，27C256-15CHA，27C512-15A，030N03LS，030N03MS，080N03LS，080N03MS，1008LS-103XJLC，1009S12WFR，100UF6.3V6.3X5.3，100113DC，10MQ040NPBF，11596-21
27C040Q100，27C128JL，27C256-15CHA，27C512-15A，030N03LS，030N03MS，080N03LS，080N03MS，1008LS-103XJLC，1009S12WFR，100UF 6.3V 6.3X5.3，100113DC，10MQ040NPBF，11596-21
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2019-3-1

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找IC，尽在114IC

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28.901.U166.10

282080-1

27110B103JO0高压传输云母电容器

2700278

27C040Q100，27C128JL，27C256-15CHA，27C512-15A，030N03LS，030N03MS，080N03LS，080N03MS，1008LS-103XJLC，1009S12WFR，100UF6.3V6.3X5.3，100113DC，10MQ040NPBF，11596-21

27C256B原装正品价格优势

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