型号 功能描述 生产厂家&企业 LOGO 操作
27C16

16,384-Bit(2048x8)UVErasableCMOSPROMMilitaryQualified

文件:111.24 Kbytes Page:8 Pages

NSCNational Semiconductor (TI)

美国国家半导体美国国家半导体公司

NSC

16Mbit2Mbx8or1Mbx16UVEPROMandOTPEPROM

DESCRIPTION TheM27C160isa16MbitEPROMofferedinthetworangesUV(ultravioleterase)andOTP(onetimeprogrammable).Itisideallysuitedformicroprocessorsystemsrequiringlargedataorprogramstorageandisorganisedaseither2Mbitwordsof8bitor1Mbitwordsof16bit.The

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS

16M-BIT[2Mx8/1Mx16]CMOSOTPROM

GENERALDESCRIPTION TheMX27C1610isa16M-bit,OneTimeProgrammableReadOnlyMemory.Itisorganizedas2Mx8or1Mx16andhasastaticstandbymode,andfeaturesfastprogramming.Forprogrammingoutsidefromthesystem,existingEPROMprogrammersmaybeused.TheMX27C1610supportsainte

MCNIXMacronix International

????????????旺宏????????????旺宏电子

MCNIX

16M-BIT[2Mx8/1Mx16]CMOSOTPROM

GENERALDESCRIPTION TheMX27C1610isa16M-bit,OneTimeProgrammableReadOnlyMemory.Itisorganizedas2Mx8or1Mx16andhasastaticstandbymode,andfeaturesfastprogramming.Forprogrammingoutsidefromthesystem,existingEPROMprogrammersmaybeused.TheMX27C1610supportsainte

MCNIXMacronix International

????????????旺宏????????????旺宏电子

MCNIX

16K(2Kx8)CMOSEEPROM

DESCRIPTION TheMicrochipTechnologyInc.28C16AisaCMOS16Knon-volatileelectricallyErasablePROM.The28C16AisaccessedlikeastaticRAMforthereadorwritecycleswithouttheneedofexternalcomponents.Duringa“bytewrite”,theaddressanddataarelatchedinternally,freeingthem

MicrochipMicrochip Technology

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Microchip

16K(2Kx8)CMOSEEPROM

DESCRIPTION TheMicrochipTechnologyInc.28C16AisaCMOS16Knon-volatileelectricallyErasablePROM.The28C16AisaccessedlikeastaticRAMforthereadorwritecycleswithouttheneedofexternalcomponents.Duringa“bytewrite”,theaddressanddataarelatchedinternally,freeingthem

MicrochipMicrochip Technology

微芯科技微芯科技股份有限公司

Microchip

16K(2Kx8)CMOSEEPROM

DESCRIPTION TheMicrochipTechnologyInc.28C16AisaCMOS16Knon-volatileelectricallyErasablePROM.The28C16AisaccessedlikeastaticRAMforthereadorwritecycleswithouttheneedofexternalcomponents.Duringa“bytewrite”,theaddressanddataarelatchedinternally,freeingthem

MicrochipMicrochip Technology

微芯科技微芯科技股份有限公司

Microchip

16K(2Kx8)CMOSEEPROM

DESCRIPTION TheMicrochipTechnologyInc.28C16AisaCMOS16Knon-volatileelectricallyErasablePROM.The28C16AisaccessedlikeastaticRAMforthereadorwritecycleswithouttheneedofexternalcomponents.Duringa“bytewrite”,theaddressanddataarelatchedinternally,freeingthem

MicrochipMicrochip Technology

微芯科技微芯科技股份有限公司

Microchip

16K(2Kx8)CMOSEEPROM

DESCRIPTION TheMicrochipTechnologyInc.28C16AisaCMOS16Knon-volatileelectricallyErasablePROM.The28C16AisaccessedlikeastaticRAMforthereadorwritecycleswithouttheneedofexternalcomponents.Duringa“bytewrite”,theaddressanddataarelatchedinternally,freeingthem

MicrochipMicrochip Technology

微芯科技微芯科技股份有限公司

Microchip

16K(2Kx8)CMOSEEPROM

DESCRIPTION TheMicrochipTechnologyInc.28C16AisaCMOS16Knon-volatileelectricallyErasablePROM.The28C16AisaccessedlikeastaticRAMforthereadorwritecycleswithouttheneedofexternalcomponents.Duringa“bytewrite”,theaddressanddataarelatchedinternally,freeingthem

MicrochipMicrochip Technology

微芯科技微芯科技股份有限公司

Microchip

16K(2Kx8)CMOSEEPROM

DESCRIPTION TheMicrochipTechnologyInc.28C16AisaCMOS16Knon-volatileelectricallyErasablePROM.The28C16AisaccessedlikeastaticRAMforthereadorwritecycleswithouttheneedofexternalcomponents.Duringa“bytewrite”,theaddressanddataarelatchedinternally,freeingthem

MicrochipMicrochip Technology

微芯科技微芯科技股份有限公司

Microchip

16K(2Kx8)CMOSEEPROM

DESCRIPTION TheMicrochipTechnologyInc.28C16AisaCMOS16Knon-volatileelectricallyErasablePROM.The28C16AisaccessedlikeastaticRAMforthereadorwritecycleswithouttheneedofexternalcomponents.Duringa“bytewrite”,theaddressanddataarelatchedinternally,freeingthem

MicrochipMicrochip Technology

微芯科技微芯科技股份有限公司

Microchip

16K(2Kx8)CMOSEEPROM

DESCRIPTION TheMicrochipTechnologyInc.28C16AisaCMOS16Knon-volatileelectricallyErasablePROM.The28C16AisaccessedlikeastaticRAMforthereadorwritecycleswithouttheneedofexternalcomponents.Duringa“bytewrite”,theaddressanddataarelatchedinternally,freeingthem

MicrochipMicrochip Technology

微芯科技微芯科技股份有限公司

Microchip

16K(2Kx8)CMOSEEPROM

DESCRIPTION TheMicrochipTechnologyInc.28C16AisaCMOS16Knon-volatileelectricallyErasablePROM.The28C16AisaccessedlikeastaticRAMforthereadorwritecycleswithouttheneedofexternalcomponents.Duringa“bytewrite”,theaddressanddataarelatchedinternally,freeingthem

MicrochipMicrochip Technology

微芯科技微芯科技股份有限公司

Microchip

16K(2Kx8)CMOSEEPROM

DESCRIPTION TheMicrochipTechnologyInc.28C16AisaCMOS16Knon-volatileelectricallyErasablePROM.The28C16AisaccessedlikeastaticRAMforthereadorwritecycleswithouttheneedofexternalcomponents.Duringa“bytewrite”,theaddressanddataarelatchedinternally,freeingthem

MicrochipMicrochip Technology

微芯科技微芯科技股份有限公司

Microchip

16K(2Kx8)CMOSEEPROM

DESCRIPTION TheMicrochipTechnologyInc.28C16AisaCMOS16Knon-volatileelectricallyErasablePROM.The28C16AisaccessedlikeastaticRAMforthereadorwritecycleswithouttheneedofexternalcomponents.Duringa“bytewrite”,theaddressanddataarelatchedinternally,freeingthem

MicrochipMicrochip Technology

微芯科技微芯科技股份有限公司

Microchip

16K(2Kx8)CMOSEEPROM

DESCRIPTION TheMicrochipTechnologyInc.28C16AisaCMOS16Knon-volatileelectricallyErasablePROM.The28C16AisaccessedlikeastaticRAMforthereadorwritecycleswithouttheneedofexternalcomponents.Duringa“bytewrite”,theaddressanddataarelatchedinternally,freeingthem

MicrochipMicrochip Technology

微芯科技微芯科技股份有限公司

Microchip

16K(2Kx8)CMOSEEPROM

DESCRIPTION TheMicrochipTechnologyInc.28C16AisaCMOS16Knon-volatileelectricallyErasablePROM.The28C16AisaccessedlikeastaticRAMforthereadorwritecycleswithouttheneedofexternalcomponents.Duringa“bytewrite”,theaddressanddataarelatchedinternally,freeingthem

MicrochipMicrochip Technology

微芯科技微芯科技股份有限公司

Microchip

16K(2Kx8)CMOSEEPROM

DESCRIPTION TheMicrochipTechnologyInc.28C16AisaCMOS16Knon-volatileelectricallyErasablePROM.The28C16AisaccessedlikeastaticRAMforthereadorwritecycleswithouttheneedofexternalcomponents.Duringa“bytewrite”,theaddressanddataarelatchedinternally,freeingthem

MicrochipMicrochip Technology

微芯科技微芯科技股份有限公司

Microchip

16K(2Kx8)CMOSEEPROM

DESCRIPTION TheMicrochipTechnologyInc.28C16AisaCMOS16Knon-volatileelectricallyErasablePROM.The28C16AisaccessedlikeastaticRAMforthereadorwritecycleswithouttheneedofexternalcomponents.Duringa“bytewrite”,theaddressanddataarelatchedinternally,freeingthem

MicrochipMicrochip Technology

微芯科技微芯科技股份有限公司

Microchip

16K(2Kx8)CMOSEEPROM

DESCRIPTION TheMicrochipTechnologyInc.28C16AisaCMOS16Knon-volatileelectricallyErasablePROM.The28C16AisaccessedlikeastaticRAMforthereadorwritecycleswithouttheneedofexternalcomponents.Duringa“bytewrite”,theaddressanddataarelatchedinternally,freeingthem

MicrochipMicrochip Technology

微芯科技微芯科技股份有限公司

Microchip

16K(2Kx8)CMOSEEPROM

DESCRIPTION TheMicrochipTechnologyInc.28C16AisaCMOS16Knon-volatileelectricallyErasablePROM.The28C16AisaccessedlikeastaticRAMforthereadorwritecycleswithouttheneedofexternalcomponents.Duringa“bytewrite”,theaddressanddataarelatchedinternally,freeingthem

MicrochipMicrochip Technology

微芯科技微芯科技股份有限公司

Microchip

16K(2Kx8)CMOSEEPROM

DESCRIPTION TheMicrochipTechnologyInc.28C16AisaCMOS16Knon-volatileelectricallyErasablePROM.The28C16AisaccessedlikeastaticRAMforthereadorwritecycleswithouttheneedofexternalcomponents.Duringa“bytewrite”,theaddressanddataarelatchedinternally,freeingthem

MicrochipMicrochip Technology

微芯科技微芯科技股份有限公司

Microchip

16K(2Kx8)CMOSEEPROM

DESCRIPTION TheMicrochipTechnologyInc.28C16AisaCMOS16Knon-volatileelectricallyErasablePROM.The28C16AisaccessedlikeastaticRAMforthereadorwritecycleswithouttheneedofexternalcomponents.Duringa“bytewrite”,theaddressanddataarelatchedinternally,freeingthem

MicrochipMicrochip Technology

微芯科技微芯科技股份有限公司

Microchip

16K(2Kx8)CMOSEEPROM

DESCRIPTION TheMicrochipTechnologyInc.28C16AisaCMOS16Knon-volatileelectricallyErasablePROM.The28C16AisaccessedlikeastaticRAMforthereadorwritecycleswithouttheneedofexternalcomponents.Duringa“bytewrite”,theaddressanddataarelatchedinternally,freeingthem

MicrochipMicrochip Technology

微芯科技微芯科技股份有限公司

Microchip

16K(2Kx8)CMOSEEPROM

DESCRIPTION TheMicrochipTechnologyInc.28C16AisaCMOS16Knon-volatileelectricallyErasablePROM.The28C16AisaccessedlikeastaticRAMforthereadorwritecycleswithouttheneedofexternalcomponents.Duringa“bytewrite”,theaddressanddataarelatchedinternally,freeingthem

MicrochipMicrochip Technology

微芯科技微芯科技股份有限公司

Microchip

16K(2Kx8)CMOSEEPROM

DESCRIPTION TheMicrochipTechnologyInc.28C16AisaCMOS16Knon-volatileelectricallyErasablePROM.The28C16AisaccessedlikeastaticRAMforthereadorwritecycleswithouttheneedofexternalcomponents.Duringa“bytewrite”,theaddressanddataarelatchedinternally,freeingthem

MicrochipMicrochip Technology

微芯科技微芯科技股份有限公司

Microchip

16K(2Kx8)CMOSEEPROM

DESCRIPTION TheMicrochipTechnologyInc.28C16AisaCMOS16Knon-volatileelectricallyErasablePROM.The28C16AisaccessedlikeastaticRAMforthereadorwritecycleswithouttheneedofexternalcomponents.Duringa“bytewrite”,theaddressanddataarelatchedinternally,freeingthem

MicrochipMicrochip Technology

微芯科技微芯科技股份有限公司

Microchip

16K(2Kx8)CMOSEEPROM

DESCRIPTION TheMicrochipTechnologyInc.28C16AisaCMOS16Knon-volatileelectricallyErasablePROM.The28C16AisaccessedlikeastaticRAMforthereadorwritecycleswithouttheneedofexternalcomponents.Duringa“bytewrite”,theaddressanddataarelatchedinternally,freeingthem

MicrochipMicrochip Technology

微芯科技微芯科技股份有限公司

Microchip

16K(2Kx8)CMOSEEPROM

DESCRIPTION TheMicrochipTechnologyInc.28C16AisaCMOS16Knon-volatileelectricallyErasablePROM.The28C16AisaccessedlikeastaticRAMforthereadorwritecycleswithouttheneedofexternalcomponents.Duringa“bytewrite”,theaddressanddataarelatchedinternally,freeingthem

MicrochipMicrochip Technology

微芯科技微芯科技股份有限公司

Microchip

16K(2Kx8)CMOSEEPROM

DESCRIPTION TheMicrochipTechnologyInc.28C16AisaCMOS16Knon-volatileelectricallyErasablePROM.The28C16AisaccessedlikeastaticRAMforthereadorwritecycleswithouttheneedofexternalcomponents.Duringa“bytewrite”,theaddressanddataarelatchedinternally,freeingthem

MicrochipMicrochip Technology

微芯科技微芯科技股份有限公司

Microchip

16K(2Kx8)CMOSEEPROM

DESCRIPTION TheMicrochipTechnologyInc.28C16AisaCMOS16Knon-volatileelectricallyErasablePROM.The28C16AisaccessedlikeastaticRAMforthereadorwritecycleswithouttheneedofexternalcomponents.Duringa“bytewrite”,theaddressanddataarelatchedinternally,freeingthem

MicrochipMicrochip Technology

微芯科技微芯科技股份有限公司

Microchip

16K(2Kx8)CMOSEEPROM

DESCRIPTION TheMicrochipTechnologyInc.28C16AisaCMOS16Knon-volatileelectricallyErasablePROM.The28C16AisaccessedlikeastaticRAMforthereadorwritecycleswithouttheneedofexternalcomponents.Duringa“bytewrite”,theaddressanddataarelatchedinternally,freeingthem

MicrochipMicrochip Technology

微芯科技微芯科技股份有限公司

Microchip

16K(2Kx8)CMOSEEPROM

DESCRIPTION TheMicrochipTechnologyInc.28C16AisaCMOS16Knon-volatileelectricallyErasablePROM.The28C16AisaccessedlikeastaticRAMforthereadorwritecycleswithouttheneedofexternalcomponents.Duringa“bytewrite”,theaddressanddataarelatchedinternally,freeingthem

MicrochipMicrochip Technology

微芯科技微芯科技股份有限公司

Microchip

16K(2Kx8)CMOSEEPROM

DESCRIPTION TheMicrochipTechnologyInc.28C16AisaCMOS16Knon-volatileelectricallyErasablePROM.The28C16AisaccessedlikeastaticRAMforthereadorwritecycleswithouttheneedofexternalcomponents.Duringa“bytewrite”,theaddressanddataarelatchedinternally,freeingthem

MicrochipMicrochip Technology

微芯科技微芯科技股份有限公司

Microchip

16K(2Kx8)CMOSEEPROM

DESCRIPTION TheMicrochipTechnologyInc.28C16AisaCMOS16Knon-volatileelectricallyErasablePROM.The28C16AisaccessedlikeastaticRAMforthereadorwritecycleswithouttheneedofexternalcomponents.Duringa“bytewrite”,theaddressanddataarelatchedinternally,freeingthem

MicrochipMicrochip Technology

微芯科技微芯科技股份有限公司

Microchip

16K(2Kx8)CMOSEEPROM

DESCRIPTION TheMicrochipTechnologyInc.28C16AisaCMOS16Knon-volatileelectricallyErasablePROM.The28C16AisaccessedlikeastaticRAMforthereadorwritecycleswithouttheneedofexternalcomponents.Duringa“bytewrite”,theaddressanddataarelatchedinternally,freeingthem

MicrochipMicrochip Technology

微芯科技微芯科技股份有限公司

Microchip

16K(2Kx8)CMOSEEPROM

DESCRIPTION TheMicrochipTechnologyInc.28C16AisaCMOS16Knon-volatileelectricallyErasablePROM.The28C16AisaccessedlikeastaticRAMforthereadorwritecycleswithouttheneedofexternalcomponents.Duringa“bytewrite”,theaddressanddataarelatchedinternally,freeingthem

MicrochipMicrochip Technology

微芯科技微芯科技股份有限公司

Microchip

16K(2Kx8)CMOSEEPROM

DESCRIPTION TheMicrochipTechnologyInc.28C16AisaCMOS16Knon-volatileelectricallyErasablePROM.The28C16AisaccessedlikeastaticRAMforthereadorwritecycleswithouttheneedofexternalcomponents.Duringa“bytewrite”,theaddressanddataarelatchedinternally,freeingthem

MicrochipMicrochip Technology

微芯科技微芯科技股份有限公司

Microchip

16K(2Kx8)CMOSEEPROM

DESCRIPTION TheMicrochipTechnologyInc.28C16AisaCMOS16Knon-volatileelectricallyErasablePROM.The28C16AisaccessedlikeastaticRAMforthereadorwritecycleswithouttheneedofexternalcomponents.Duringa“bytewrite”,theaddressanddataarelatchedinternally,freeingthem

MicrochipMicrochip Technology

微芯科技微芯科技股份有限公司

Microchip

16K(2Kx8)CMOSEEPROM

DESCRIPTION TheMicrochipTechnologyInc.28C16AisaCMOS16Knon-volatileelectricallyErasablePROM.The28C16AisaccessedlikeastaticRAMforthereadorwritecycleswithouttheneedofexternalcomponents.Duringa“bytewrite”,theaddressanddataarelatchedinternally,freeingthem

MicrochipMicrochip Technology

微芯科技微芯科技股份有限公司

Microchip

16K(2Kx8)CMOSEEPROM

DESCRIPTION TheMicrochipTechnologyInc.28C16AisaCMOS16Knon-volatileelectricallyErasablePROM.The28C16AisaccessedlikeastaticRAMforthereadorwritecycleswithouttheneedofexternalcomponents.Duringa“bytewrite”,theaddressanddataarelatchedinternally,freeingthem

MicrochipMicrochip Technology

微芯科技微芯科技股份有限公司

Microchip

16K(2Kx8)CMOSEEPROM

DESCRIPTION TheMicrochipTechnologyInc.28C16AisaCMOS16Knon-volatileelectricallyErasablePROM.The28C16AisaccessedlikeastaticRAMforthereadorwritecycleswithouttheneedofexternalcomponents.Duringa“bytewrite”,theaddressanddataarelatchedinternally,freeingthem

MicrochipMicrochip Technology

微芯科技微芯科技股份有限公司

Microchip

16K(2Kx8)CMOSEEPROM

DESCRIPTION TheMicrochipTechnologyInc.28C16AisaCMOS16Knon-volatileelectricallyErasablePROM.The28C16AisaccessedlikeastaticRAMforthereadorwritecycleswithouttheneedofexternalcomponents.Duringa“bytewrite”,theaddressanddataarelatchedinternally,freeingthem

MicrochipMicrochip Technology

微芯科技微芯科技股份有限公司

Microchip

16K(2Kx8)CMOSEEPROM

DESCRIPTION TheMicrochipTechnologyInc.28C16AisaCMOS16Knon-volatileelectricallyErasablePROM.The28C16AisaccessedlikeastaticRAMforthereadorwritecycleswithouttheneedofexternalcomponents.Duringa“bytewrite”,theaddressanddataarelatchedinternally,freeingthem

MicrochipMicrochip Technology

微芯科技微芯科技股份有限公司

Microchip

16K(2Kx8)CMOSEEPROM

DESCRIPTION TheMicrochipTechnologyInc.28C16AisaCMOS16Knon-volatileelectricallyErasablePROM.The28C16AisaccessedlikeastaticRAMforthereadorwritecycleswithouttheneedofexternalcomponents.Duringa“bytewrite”,theaddressanddataarelatchedinternally,freeingthem

MicrochipMicrochip Technology

微芯科技微芯科技股份有限公司

Microchip

16K(2Kx8)CMOSEEPROM

DESCRIPTION TheMicrochipTechnologyInc.28C16AisaCMOS16Knon-volatileelectricallyErasablePROM.The28C16AisaccessedlikeastaticRAMforthereadorwritecycleswithouttheneedofexternalcomponents.Duringa“bytewrite”,theaddressanddataarelatchedinternally,freeingthem

MicrochipMicrochip Technology

微芯科技微芯科技股份有限公司

Microchip

16K(2Kx8)CMOSEEPROM

DESCRIPTION TheMicrochipTechnologyInc.28C16AisaCMOS16Knon-volatileelectricallyErasablePROM.The28C16AisaccessedlikeastaticRAMforthereadorwritecycleswithouttheneedofexternalcomponents.Duringa“bytewrite”,theaddressanddataarelatchedinternally,freeingthem

MicrochipMicrochip Technology

微芯科技微芯科技股份有限公司

Microchip

16K(2Kx8)CMOSEEPROM

DESCRIPTION TheMicrochipTechnologyInc.28C16AisaCMOS16Knon-volatileelectricallyErasablePROM.The28C16AisaccessedlikeastaticRAMforthereadorwritecycleswithouttheneedofexternalcomponents.Duringa“bytewrite”,theaddressanddataarelatchedinternally,freeingthem

MicrochipMicrochip Technology

微芯科技微芯科技股份有限公司

Microchip

16K(2Kx8)CMOSEEPROM

DESCRIPTION TheMicrochipTechnologyInc.28C16AisaCMOS16Knon-volatileelectricallyErasablePROM.The28C16AisaccessedlikeastaticRAMforthereadorwritecycleswithouttheneedofexternalcomponents.Duringa“bytewrite”,theaddressanddataarelatchedinternally,freeingthem

MicrochipMicrochip Technology

微芯科技微芯科技股份有限公司

Microchip

16K(2Kx8)CMOSEEPROM

DESCRIPTION TheMicrochipTechnologyInc.28C16AisaCMOS16Knon-volatileelectricallyErasablePROM.The28C16AisaccessedlikeastaticRAMforthereadorwritecycleswithouttheneedofexternalcomponents.Duringa“bytewrite”,theaddressanddataarelatchedinternally,freeingthem

MicrochipMicrochip Technology

微芯科技微芯科技股份有限公司

Microchip

16K(2Kx8)CMOSEEPROM

DESCRIPTION TheMicrochipTechnologyInc.28C16AisaCMOS16Knon-volatileelectricallyErasablePROM.The28C16AisaccessedlikeastaticRAMforthereadorwritecycleswithouttheneedofexternalcomponents.Duringa“bytewrite”,theaddressanddataarelatchedinternally,freeingthem

MicrochipMicrochip Technology

微芯科技微芯科技股份有限公司

Microchip

16K(2Kx8)CMOSEEPROM

DESCRIPTION TheMicrochipTechnologyInc.28C16AisaCMOS16Knon-volatileelectricallyErasablePROM.The28C16AisaccessedlikeastaticRAMforthereadorwritecycleswithouttheneedofexternalcomponents.Duringa“bytewrite”,theaddressanddataarelatchedinternally,freeingthem

MicrochipMicrochip Technology

微芯科技微芯科技股份有限公司

Microchip

16K(2Kx8)CMOSEEPROM

DESCRIPTION TheMicrochipTechnologyInc.28C16AisaCMOS16Knon-volatileelectricallyErasablePROM.The28C16AisaccessedlikeastaticRAMforthereadorwritecycleswithouttheneedofexternalcomponents.Duringa“bytewrite”,theaddressanddataarelatchedinternally,freeingthem

MicrochipMicrochip Technology

微芯科技微芯科技股份有限公司

Microchip

16K(2Kx8)CMOSEEPROM

DESCRIPTION TheMicrochipTechnologyInc.28C16AisaCMOS16Knon-volatileelectricallyErasablePROM.The28C16AisaccessedlikeastaticRAMforthereadorwritecycleswithouttheneedofexternalcomponents.Duringa“bytewrite”,theaddressanddataarelatchedinternally,freeingthem

MicrochipMicrochip Technology

微芯科技微芯科技股份有限公司

Microchip

16K(2Kx8)CMOSEEPROM

DESCRIPTION TheMicrochipTechnologyInc.28C16AisaCMOS16Knon-volatileelectricallyErasablePROM.The28C16AisaccessedlikeastaticRAMforthereadorwritecycleswithouttheneedofexternalcomponents.Duringa“bytewrite”,theaddressanddataarelatchedinternally,freeingthem

MicrochipMicrochip Technology

微芯科技微芯科技股份有限公司

Microchip

16K(2Kx8)CMOSEEPROM

DESCRIPTION TheMicrochipTechnologyInc.28C16AisaCMOS16Knon-volatileelectricallyErasablePROM.The28C16AisaccessedlikeastaticRAMforthereadorwritecycleswithouttheneedofexternalcomponents.Duringa“bytewrite”,theaddressanddataarelatchedinternally,freeingthem

MicrochipMicrochip Technology

微芯科技微芯科技股份有限公司

Microchip

16K(2Kx8)CMOSEEPROM

DESCRIPTION TheMicrochipTechnologyInc.28C16AisaCMOS16Knon-volatileelectricallyErasablePROM.The28C16AisaccessedlikeastaticRAMforthereadorwritecycleswithouttheneedofexternalcomponents.Duringa“bytewrite”,theaddressanddataarelatchedinternally,freeingthem

MicrochipMicrochip Technology

微芯科技微芯科技股份有限公司

Microchip

16K(2Kx8)CMOSEEPROM

DESCRIPTION TheMicrochipTechnologyInc.28C16AisaCMOS16Knon-volatileelectricallyErasablePROM.The28C16AisaccessedlikeastaticRAMforthereadorwritecycleswithouttheneedofexternalcomponents.Duringa“bytewrite”,theaddressanddataarelatchedinternally,freeingthem

MicrochipMicrochip Technology

微芯科技微芯科技股份有限公司

Microchip

16K(2Kx8)CMOSEEPROM

DESCRIPTION TheMicrochipTechnologyInc.28C16AisaCMOS16Knon-volatileelectricallyErasablePROM.The28C16AisaccessedlikeastaticRAMforthereadorwritecycleswithouttheneedofexternalcomponents.Duringa“bytewrite”,theaddressanddataarelatchedinternally,freeingthem

MicrochipMicrochip Technology

微芯科技微芯科技股份有限公司

Microchip

27C16产品属性

  • 类型

    描述

  • 型号

    27C16

  • 制造商

    NSC

  • 制造商全称

    National Semiconductor

  • 功能描述

    16,384-Bit(2048 x 8) UV Erasable CMOS PROM Military Qualified

更新时间:2025-6-17 23:00:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
FAIRCHILD/仙童
24+
NA/
3388
原装现货,当天可交货,原型号开票
NS
23+
NA
20000
全新原装假一赔十
MX
23+
IC
120000
十七年VIP会员,诚信经营,一手货源,原装正品可零售!
MX
24+/25+
259
原装正品现货库存价优
NS/国半
25+
DIP
880000
明嘉莱只做原装正品现货
ST/意法
23+
DIP SOP
3000
一级代理原厂VIP渠道,专注军工、汽车、医疗、工业、
MX
24+
DIP
4326
公司原厂原装现货假一罚十!特价出售!强势库存!
FSC
21+
原厂原装
138
原装现货假一赔十
NS
2023+
DIP
8700
原装现货
NS/国半
21+
DIP
4580
只做原装正品假一赔十!正规渠道订货!

27C16芯片相关品牌

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  • Fujitsu
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