16K (2K x 8) CMOS EEPROM

DESCRIPTION The Microchip Technology Inc. 28C16A is a CMOS 16K non-volatile electrically Erasable PROM. The 28C16A is accessed like a static RAM for the read or write cycles without the need of external components. Dur ing a “byte write”, the address and data are latched internally, freeing the m

16K (2K x 8) CMOS EEPROM

DESCRIPTION The Microchip Technology Inc. 28C16A is a CMOS 16K non-volatile electrically Erasable PROM. The 28C16A is accessed like a static RAM for the read or write cycles without the need of external components. Dur ing a “byte write”, the address and data are latched internally, freeing the m

16K (2K x 8) CMOS EEPROM

DESCRIPTION The Microchip Technology Inc. 28C16A is a CMOS 16K non-volatile electrically Erasable PROM. The 28C16A is accessed like a static RAM for the read or write cycles without the need of external components. Dur ing a “byte write”, the address and data are latched internally, freeing the m

16K (2K x 8) CMOS EEPROM

DESCRIPTION The Microchip Technology Inc. 28C16A is a CMOS 16K non-volatile electrically Erasable PROM. The 28C16A is accessed like a static RAM for the read or write cycles without the need of external components. Dur ing a “byte write”, the address and data are latched internally, freeing the m

16K (2K x 8) CMOS EEPROM

DESCRIPTION The Microchip Technology Inc. 28C16A is a CMOS 16K non-volatile electrically Erasable PROM. The 28C16A is accessed like a static RAM for the read or write cycles without the need of external components. Dur ing a “byte write”, the address and data are latched internally, freeing the m

16K (2K x 8) CMOS EEPROM

DESCRIPTION The Microchip Technology Inc. 28C16A is a CMOS 16K non-volatile electrically Erasable PROM. The 28C16A is accessed like a static RAM for the read or write cycles without the need of external components. Dur ing a “byte write”, the address and data are latched internally, freeing the m