RF Power Field Effect Transistor

880 MHz, 10 W AVG., 28 V SINGLE N-CDMA LATERAL N-CHANNEL BROADBAND RF POWER MOSFET Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of this device makes it ideal for large-signal, common-source amplifier applica

RF Power Field Effect Transistors

RF Power Field Effect Transistors N- Channel Enhancement- Mode Lateral MOSFETs Designed primarily for CW large- signal output and driver applications with frequencies up to 600 MHz. Devices are unmatched and are suitable for use in industrial, medical and scientific applications.

Airfast RF Power LDMOS Transistor

封装/外壳：2-SMD，J 形引线 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：FERRITE BEAD 2SMD 1LN 滤波器 铁氧体磁珠和芯片

SM Beads

RF Power LDMOS Transistor N--Channel Enhancement--Mode Lateral MOSFET

RF Power Field Effect Transistors

Airfast RF Power LDMOS Transistor

RF Power LDMOS Transistor High Ruggedness N--Channel Enhancement--Mode Lateral MOSFET

RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs

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RF Power Field Effect Transistor

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RF Power Field Effect Transistors

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43 SM BEAD

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SM Beads (Differential- Mode)

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N-Channel Enhancement-Mode Lateral MOSFETs

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N-Channel Enhancement-Mode Lateral MOSFETs

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43 SM BEAD

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RF Power Field--Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs

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RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs

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SM Beads (Differential- Mode)

文件：1.54876 Mbytes Page：3 Pages