512-Kbit SPI Serial SRAM with Battery Backup and SDI Interface

Features: • SPI-Compatible Bus Interface: - 20 MHz Clock rate - SPI/SDI mode • Low-Power CMOS Technology: - Read Current: 3 mA at 5.5V, 20 MHz - Standby Current: 4 A at +85°C • Unlimited Read and Write Cycles • External Battery Backup support • Zero Write Time • 64K x 8-bit Organization

512 Kbit SPI Serial SRAM with Battery Backup and SDI Interface

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512-Kbit SPI Serial SRAM with Battery Backup and SDI Interface

Features: • SPI-Compatible Bus Interface: - 20 MHz Clock rate - SPI/SDI mode • Low-Power CMOS Technology: - Read Current: 3 mA at 5.5V, 20 MHz - Standby Current: 4 A at +85°C • Unlimited Read and Write Cycles • External Battery Backup support • Zero Write Time • 64K x 8-bit Organization

512-Kbit SPI Serial SRAM with Battery Backup and SDI Interface

Features: • SPI-Compatible Bus Interface: - 20 MHz Clock rate - SPI/SDI mode • Low-Power CMOS Technology: - Read Current: 3 mA at 5.5V, 20 MHz - Standby Current: 4 A at +85°C • Unlimited Read and Write Cycles • External Battery Backup support • Zero Write Time • 64K x 8-bit Organization

512-Kbit SPI Serial SRAM with Battery Backup and SDI Interface

Features: • SPI-Compatible Bus Interface: - 20 MHz Clock rate - SPI/SDI mode • Low-Power CMOS Technology: - Read Current: 3 mA at 5.5V, 20 MHz - Standby Current: 4 A at +85°C • Unlimited Read and Write Cycles • External Battery Backup support • Zero Write Time • 64K x 8-bit Organization

512-Kbit SPI Serial SRAM with Battery Backup and SDI Interface

Features: • SPI-Compatible Bus Interface: - 20 MHz Clock rate - SPI/SDI mode • Low-Power CMOS Technology: - Read Current: 3 mA at 5.5V, 20 MHz - Standby Current: 4 A at +85°C • Unlimited Read and Write Cycles • External Battery Backup support • Zero Write Time • 64K x 8-bit Organization

512-Kbit SPI Serial SRAM with Battery Backup and SDI Interface

Features: • SPI-Compatible Bus Interface: - 20 MHz Clock rate - SPI/SDI mode • Low-Power CMOS Technology: - Read Current: 3 mA at 5.5V, 20 MHz - Standby Current: 4 A at +85°C • Unlimited Read and Write Cycles • External Battery Backup support • Zero Write Time • 64K x 8-bit Organization

512-Kbit SPI Serial SRAM with Battery Backup and SDI Interface

Features: • SPI-Compatible Bus Interface: - 20 MHz Clock rate - SPI/SDI mode • Low-Power CMOS Technology: - Read Current: 3 mA at 5.5V, 20 MHz - Standby Current: 4 A at +85°C • Unlimited Read and Write Cycles • External Battery Backup support • Zero Write Time • 64K x 8-bit Organization

512-Kbit SPI Serial SRAM with Battery Backup and SDI Interface

Features: • SPI-Compatible Bus Interface: - 20 MHz Clock rate - SPI/SDI mode • Low-Power CMOS Technology: - Read Current: 3 mA at 5.5V, 20 MHz - Standby Current: 4 A at +85°C • Unlimited Read and Write Cycles • External Battery Backup support • Zero Write Time • 64K x 8-bit Organization

512-Kbit SPI Serial SRAM with Battery Backup and SDI Interface

Features: • SPI-Compatible Bus Interface: - 20 MHz Clock rate - SPI/SDI mode • Low-Power CMOS Technology: - Read Current: 3 mA at 5.5V, 20 MHz - Standby Current: 4 A at +85°C • Unlimited Read and Write Cycles • External Battery Backup support • Zero Write Time • 64K x 8-bit Organization

512-Kbit SPI Serial SRAM with Battery Backup and SDI Interface

Features: • SPI-Compatible Bus Interface: - 20 MHz Clock rate - SPI/SDI mode • Low-Power CMOS Technology: - Read Current: 3 mA at 5.5V, 20 MHz - Standby Current: 4 A at +85°C • Unlimited Read and Write Cycles • External Battery Backup support • Zero Write Time • 64K x 8-bit Organization

512-Kbit SPI Serial SRAM with Battery Backup and SDI Interface

Features: • SPI-Compatible Bus Interface: - 20 MHz Clock rate - SPI/SDI mode • Low-Power CMOS Technology: - Read Current: 3 mA at 5.5V, 20 MHz - Standby Current: 4 A at +85°C • Unlimited Read and Write Cycles • External Battery Backup support • Zero Write Time • 64K x 8-bit Organization

512-Kbit SPI Serial SRAM with Battery Backup and SDI Interface

Features: • SPI-Compatible Bus Interface: - 20 MHz Clock rate - SPI/SDI mode • Low-Power CMOS Technology: - Read Current: 3 mA at 5.5V, 20 MHz - Standby Current: 4 A at +85°C • Unlimited Read and Write Cycles • External Battery Backup support • Zero Write Time • 64K x 8-bit Organization

512-Kbit SPI Serial SRAM with Battery Backup and SDI Interface

Features: • SPI-Compatible Bus Interface: - 20 MHz Clock rate - SPI/SDI mode • Low-Power CMOS Technology: - Read Current: 3 mA at 5.5V, 20 MHz - Standby Current: 4 A at +85°C • Unlimited Read and Write Cycles • External Battery Backup support • Zero Write Time • 64K x 8-bit Organization

512-Kbit SPI Serial SRAM with Battery Backup and SDI Interface

Features: • SPI-Compatible Bus Interface: - 20 MHz Clock rate - SPI/SDI mode • Low-Power CMOS Technology: - Read Current: 3 mA at 5.5V, 20 MHz - Standby Current: 4 A at +85°C • Unlimited Read and Write Cycles • External Battery Backup support • Zero Write Time • 64K x 8-bit Organization

封装/外壳：8-SOIC（0.154"，3.90mm 宽） 包装：卷带（TR） 描述：IC SRAM 512KBIT SPI/DUAL 8SOIC 集成电路（IC） 存储器

封装/外壳：8-TSSOP（0.173"，4.40mm 宽） 包装：卷带（TR） 描述：IC SRAM 512KBIT SPI/DL 8TSSOP 集成电路（IC） 存储器