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型号 功能描述 生产厂家 企业 LOGO 操作

丝印代码:2302A;3A, 20V N-CHANNEL MOSFET

Feature Fast switching capability Avalanche energy tested Improved dv/dt capability, high ruggedness

YFWDIODE

佑风微

2302A

丝印代码:2302;N-Channel Enhancement Mode Power MOSFET

Description The 2302A uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

GOFORD

谷峰半导体

2302A

MOSFET

Power MOSFETs find widespread use across various applications due to their low ON resistance, making them particularly appealing. By minimizing power dissipation, they contribute to cost reduction, smaller form factors, and less cooling requirements, resulting in significant enhancements for electro

GOFORD

谷峰半导体

8-bit 50MSPS Video A/D Converter with Clamp Function

Description The CXD2302Q is an 8-bit CMOS A/D converter for video with synchronizing clamp function. The adoption of 2 step-parallel method achieves low power consumption and a maximum conversion rate of 50MSPS. Features • Resolution: 8 bit ± 1/2LSB (DL) • Maximum sampling frequency: 50MSPS •

SONYSony Corporation

索尼

Silicon NPN Transistor Color TV Horizontal Deflection Output w/Damper Diode

Features: • High Breakdown Voltage and High Reliability • High Switching Speed • Capable of Being Mounted in a Variety of Methods

NTE

BROADBAND LINEAR VARIABLE GAIN AMPLIFIER

Product Description The RF2302 is a broadband linear variable gain amplifier that was designed specifically for digital communications systems that require linear amplification over a wide gain control range. It is suitable for use in CDMA or TDMA systems in the cellular or PCS band, in DAMPS sys

RFMD

威讯联合

BROADBAND LINEAR VARIABLE GAIN AMPLIFIER

Product Description The RF2302 is a broadband linear variable gain amplifier that was designed specifically for digital communications systems that require linear amplification over a wide gain control range. It is suitable for use in CDMA or TDMA systems in the cellular or PCS band, in DAMPS sys

RFMD

威讯联合

N-channel enhancement mode field-effect transistor

Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™ technology. Product availability: SI2302DS in SOT23. Features TrenchMOS™ technology Very fast switching Logic level compatible Subminiature surface mount package.

PHILIPS

飞利浦

更新时间:2026-5-24 22:30:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
SAMTEC/申泰
24+
NA
80000
只做自己库存 全新原装进口正品假一赔百 可开13%增
SAMTEC/申泰
2023+
CONN
1688
全新原装正品,优势价格
SAMTEC
2447
NA
100500
一级代理专营品牌!原装正品,优势现货,长期排单到货
SAMTEC
23+
连接器
1343
优势货源原装正品
SAMTEC/申泰
23+
2021
11200
原厂授权一级代理、全球订货优势渠道、可提供一站式BO
26+
N/A
70000
一级代理-主营优势-实惠价格-不悔选择
SAMTEC
2026+
SMT
300000
济德9240-05368替代YFW-20-07-H-05-SB
SAMTEC
ROHS
13352
一级代理 原装正品假一罚十价格优势长期供货
SAMTEC/申泰
2450+
160P
9850
只做原装正品假一赔十为客户做到零风险!!
YEONHO
2022+
500
全新原装 货期两周

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