型号 功能描述 生产厂家 企业 LOGO 操作
2301H

P-Channel Enhancement Mode Power MOSFET

Description The 2301H uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

GOFORD

谷峰半导体

2301H

Trench Mosfet

GOFORD

谷峰半导体

Vibrating level switch

The device Type 8110 is a filling level switch for liquids, using a tuning fork as the sensor element. It is designed for industrial use in all areas of process technology and can be used in liquids. Typical applications are overflow or run-dry protection. The small tuning fork (40 mm in lengt

BURKERT

宝帝流体控制系统

1.5 Watt - 20 Volts, Class C Microwave 2300 MHz

GENERAL DESCRIPTION The 2301 is a COMMON BASE transistor capable of providing 1.5 Watts Class C, RF output power at 2300 MHz. Gold metalization and diffused ballasting are used to provide high reliability and supreme ruggedness. The transistor uses a fully hermetic High Temperature Solder Sealed

GHZTECH

SOT-23 Plastic-Encapsulate MOSFETS

文件:5.03147 Mbytes Page:5 Pages

DGNJDZ

南晶电子

-2.8A竊?20V P-CHANNEL MOSFET

文件:111.41 Kbytes Page:4 Pages

KIA

可易亚半导体

10V P-Channel Enhanced MOS FET

文件:171.02 Kbytes Page:3 Pages

FUMAN

富满微

P-Channel Enhancement Mode Power MOSFET

Description The 2301HA uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

GOFORD

谷峰半导体

2301H产品属性

  • 类型

    描述

  • 型号

    2301H

  • 制造商

    JT&T Products

更新时间:2026-1-27 23:00:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
Bourns Inc.
25+
-
7734
样件支持,可原厂排单订货!
Bourns Inc.
25+
-
7786
正规渠道,免费送样。支持账期,BOM一站式配齐
GOFORD(谷峰)
20+
SOT-23
3000
迪恩思DIOS
2450+
SOT-23
9850
只做原厂原装正品现货或订货假一赔十!
大芯片大体积
26+
TSOP8
86720
全新原装正品价格最实惠 假一赔百
GOFORD
2025+
SOT-23
5000
原装进口价格优 请找坤融电子!
JWM
24+
70
中性
20+
SOT-23
1005
NK/南科功率
2025+
SOT-23
986966
国产
GOFORD
24+
con
10
现货常备产品原装可到京北通宇商城查价格

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