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2212-RC

High Current Toroid Inductors

文件:111.41 Kbytes Page:1 Pages

BOURNS

伯恩斯

2212-RC

High Current Toroid Inductors

文件:111.41 Kbytes Page:1 Pages

BOURNS

伯恩斯

2212-RC

High Current Toroid Inductors

文件:111.41 Kbytes Page:1 Pages

BOURNS

伯恩斯

2212-RC

High Current Toroid Inductors

文件:111.41 Kbytes Page:1 Pages

BOURNS

伯恩斯

2212-RC

High Current Toroid Inductors

文件:111.41 Kbytes Page:1 Pages

BOURNS

伯恩斯

2212-RC

High Current Toroid Inductors Horizontal or vertical mount Low cost

文件:111.41 Kbytes Page:1 Pages

BOURNS

伯恩斯

2212-RC

High Current Toroid Inductors

文件:111.41 Kbytes Page:1 Pages

ROHM

罗姆

PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR?

General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. Polyfet process features gold metal for greatly extended lifetime

POLYFET

Silicon NPN epitaxial planer transistor

Silicon NPN epitaxial planar transistor For digital circuits ■ Features • Costs can be reduced through downsizing of the equipment and reduction of the number of parts. • Mini type package allowing easy automatic insertion through tape packing and magazine packing

PANASONIC

松下

Silicon NPN epitaxial planer transistor

Silicon NPN epitaxial planer transistor For switching/digital circuits ■ Features ● Two elements incorporated into one package. (Base-coupled transistors with built-in resistor) ● Reduction of the mounting area and assembly cost by one half.

PANASONIC

松下

NPN SILICON BIAS RESISTOR TRANSISTOR

文件:150.44 Kbytes Page:12 Pages

ONSEMI

安森美半导体

SINGLE-SLOT, PARALLEL INTERFACE POWER SWITCH FOR LOW POWER PC CARD SLOTS

文件:296.94 Kbytes Page:20 Pages

TI

德州仪器

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