| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
Integrated Circuit NMOS, 1K Static RAM (SRAM), 350ns Description: The NTE2101 is a high–speed 1024 x 1 bit static random access read/write memory in a 16–Lead DIP type package designed using N–Channel depletion mode silicon gate technology. Static storage cells eliminate the need for clock or refresh circuitry. Low threshold silicon gate N–Cha | NTE |   | ||
SYSTEM RESET IC 文件：314.14 Kbytes Page：11 Pages | NJRC 日本无线 | | ||
SYSTEM RESET IC 文件：314.14 Kbytes Page：11 Pages | NJRC 日本无线 | | ||
SYSTEM RESET IC 文件：314.14 Kbytes Page：11 Pages | NJRC 日本无线 | | ||
SYSTEM RESET IC 文件：314.14 Kbytes Page：11 Pages | NJRC 日本无线 | |
2102NSC规格书下载地址
2102NSC参数引脚图相关
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- 2102T-440-SS-20
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- 2102T-440-S
- 2102T-440-N
- 2102T-440-AL-7
- 2102-RC
- 2102-PHV
- 2102-P
- 2102N-A01-GQFIC
- 2102N-A01-GQF
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- 2102A
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- 2102628
- 21025-4
- 21024-8
- 21024-5
2102NSC数据表相关新闻
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2023-2-42102736-1新到货全新原装，公司现货！
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20TQC8R2M 深圳市得捷芯城电子科技 AVX KEMET 尼康 三洋 钽电容代理商
2020-8-262-103186-0
2-103186-0，全新原装当天发货或门市自取0755-82732291.
2019-9-30
DdatasheetPDF页码索引
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