丝印代码：20N60C3；Cool MOS Power Transistor

Feature • New revolutionary high voltage technology • Worldwide best RDS(on) in TO 220 • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • High peak current capability • Improved transconductance • P-TO-220-3-31: Fully isolated package (2500 VAC; 1 minute)

丝印代码：20N60C3；Cool MOS Power Transistor

Feature • New revolutionary high voltage technology • Worldwide best RDS(on) in TO 220 • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • High peak current capability • Improved transconductance • P-TO-220-3-31: Fully isolated package (2500 VAC; 1 minute)

丝印代码：20N60C3；Cool MOS Power Transistor Feature new revolutionary high voltage technology

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丝印代码：20N60C3；Cool MOS Power Transistor

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丝印代码：20N60C3；New revolutionary high voltage technology Worldwide best RDS(on) in TO 220 Ultra low gate charge

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丝印代码：20N60C3；Cool MOS Power Transistor

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Cool MOS??Power Transistor

Feature • New revolutionary high voltage technology • Worldwide best RDS(on) in TO 220 • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances

Cool MOS™ Power Transistor

Feature\n• New revolutionary high voltage technology\n• Worldwide best RDS(on) in TO 220\n• Ultra low gate charge\n• Periodic avalanche rated\n• Extreme dv/dt rated\n• Ultra low effective capacitances

45A, 600V, UFS Series N-Channel IGBT

This family of MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately be

45A, 600V, UFS Series N-Channel IGBT

This family of MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately

Cool MOS Power Transistor

Feature • New revolutionary high voltage technology • Worldwide best RDS(on) in TO 220 • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • High peak current capability • Improved transconductance • P-TO-220-3-31: Fully isolated package (2500 VAC; 1 minute)

40A, 600V, Rugged UFS Series N-Channel IGBTs

\nDescription\nThis family of IGBTs was designed for optimum performance in the demanding world of motor control operation as well as other high voltage switching applications. These devices demonstrate RUGGED performance capability when subjected to harsh SHORT CIRCUIT WITHSTAND TIME\n(SCWT) condit • 40A, 600V TJ= 25oC\n• 600V Switching SOA Capability\n• Typical Fall Time at TJ= 150oC . . . . . . . . . . . . . 330ns\n• Short Circuit Rating at TJ= 150oC . . . . . . . . . . . . . 10µs\n• Low Conduction Loss;

CoolMOS Power Transistor

Features • New revolutionary high voltage technology • Intrinsic fast-recovery body diode • Extremely low reverse recovery charge • Ultra low gate charge • Extreme dv /dt rated • High peak current capability • Periodic avalanche rated • Qualified for industrial grade applications according

CoolMOS Power Transistor

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CoolMOSTM Power Transistor Features New revolutionary high voltage technology Extreme dv/dt rated

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HITACHI Encapsulation, DIP 16

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Insulated Gate Bipolar Transistor

Insulated Gate Bipolar Transistor N–Channel Enhancement–Mode Silicon Gate This Insulated Gate Bipolar Transistor (IGBT) uses an advanced termination scheme to provide an enhanced and reliable high voltage–blocking capability. It also provides low on–voltage which results in efficient operation at

Insulated Gate Bipolar Transistor

Insulated Gate Bipolar Transistor N–Channel Enhancement–Mode Silicon Gate This Insulated Gate Bipolar Transistor (IGBT) uses an advanced termination scheme to provide an enhanced and reliable high voltage–blocking capability. It also provides fast switching charac teristics and results in efficie

Insulated Gate Bipolar Transistor with Anti-Parallel Diode

This Insulated Gate Bipolar Transistor (IGBT) is co–packaged with a soft recovery ultra–fast rectifier and uses an advanced termination scheme to provide an enhanced and reliable high voltage–blocking capability. Short circuit rated IGBT’s are specifically suited for applications requiring a guara

Short Circuit Rated IGBT

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Short Circuit Rated IGBT

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