型号 功能描述 生产厂家 企业 LOGO 操作
20N60BD1

HiPerFAST IGBT with Diode

VCES = 600 V IC25 = 40 A VCE(sat)typ = 1.7 V tfi(typ) = 100 ns Features • International standard packages • High frequency IGBT and antiparallel FRED in one package • High current handling capability • HiPerFASTTM HDMOSTM process • MOS Gate turn-on -drive simplicity Applications • Unin

IXYS

艾赛斯

20N60BD1

HiPerFAST IGBT with Diode

Littelfuse

力特

High Voltage IGBT with optional Diode

VCES = 600 V IC25 = 32 A VCE(sat) typ = 2.2 V Features ● NPT IGBT technology ● low switching losses ● low tail current ● no latch up ● short circuit capability ● positive temperature coefficient for easy paralleling ● MOS input, voltage controlled ● optional ultr

IXYS

艾赛斯

HiPerFAST IGBT with Diode

VCES = 600 V IC25 = 40 A VCE(sat)typ = 1.7 V tfi(typ) = 100 ns Features • International standard packages • High frequency IGBT and antiparallel FRED in one package • High current handling capability • HiPerFASTTM HDMOSTM process • MOS Gate turn-on -drive simplicity Applications • Unin

IXYS

艾赛斯

HiPerFAST IGBT with Diode

VCES = 600 V IC25 = 40 A VCE(sat)typ = 1.7 V tfi(typ) = 100 ns Features • International standard packages • High frequency IGBT and antiparallel FRED in one package • High current handling capability • HiPerFASTTM HDMOSTM process • MOS Gate turn-on -drive simplicity Applications • Unin

IXYS

艾赛斯

20N60BD1产品属性

  • 类型

    描述

  • 型号

    20N60BD1

  • 制造商

    IXYS

  • 制造商全称

    IXYS Corporation

  • 功能描述

    HiPerFAST IGBT with Diode

更新时间:2025-10-14 20:01:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
TO220/
43
全新原装进口自己库存优势
INF
16+
220-220F
11
一级代理,专注军工、汽车、医疗、工业、新能源、电力
INFINEON丨英飞凌
20+
TO-220F
38900
原装优势主营型号-可开原型号增税票
N/L
N/A
1
24+
TO220
4231
公司原厂原装现货假一罚十!特价出售!强势库存!
TO-220-3
23+
NA
15659
振宏微专业只做正品,假一罚百!
英飞凌
22+
TO-220
8000
原装正品支持实单
INFIENON
TO-247
3200
原装长期供货!
Infineon
24+
TO-3P
30
INFINEON/英飞凌
22+
TO-3P
12245
现货,原厂原装假一罚十!

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