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| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
20N60BD1 | HiPerFASTIGBTwithDiode VCES=600V IC25=40A VCE(sat)typ=1.7V tfi(typ)=100ns Features •Internationalstandardpackages •HighfrequencyIGBTandantiparallelFREDinonepackage •Highcurrenthandlingcapability •HiPerFASTTMHDMOSTMprocess •MOSGateturn-on -drivesimplicity Applications •Unin | IXYS IXYS Corporation |  |   |
HighVoltageIGBTwithoptionalDiode VCES=600V IC25=32A VCE(sat)typ=2.2V Features ●NPTIGBTtechnology ●lowswitchinglosses ●lowtailcurrent ●nolatchup ●shortcircuitcapability ●positivetemperaturecoefficientforeasyparalleling ●MOSinput,voltagecontrolled ●optionalultr | IXYS IXYS Corporation | | | |
HiPerFASTIGBTwithDiode VCES=600V IC25=40A VCE(sat)typ=1.7V tfi(typ)=100ns Features •Internationalstandardpackages •HighfrequencyIGBTandantiparallelFREDinonepackage •Highcurrenthandlingcapability •HiPerFASTTMHDMOSTMprocess •MOSGateturn-on -drivesimplicity Applications •Unin | IXYS IXYS Corporation | | | |
HiPerFASTIGBTwithDiode VCES=600V IC25=40A VCE(sat)typ=1.7V tfi(typ)=100ns Features •Internationalstandardpackages •HighfrequencyIGBTandantiparallelFREDinonepackage •Highcurrenthandlingcapability •HiPerFASTTMHDMOSTMprocess •MOSGateturn-on -drivesimplicity Applications •Unin | IXYS IXYS Corporation | | |
20N60BD1产品属性
- 类型
描述
- 型号
20N60BD1
- 制造商
IXYS
- 制造商全称
IXYS Corporation
- 功能描述
HiPerFAST IGBT with Diode
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
INFINEO |
24+ |
TO-247 |
80000 |
只做自己库存,全新原装进口正品假一赔百,可开13%增 |
|||
2017+ |
TO247 |
6528 |
只做原装正品假一赔十! |
||||
INFINEON |
23+ |
TO-220 |
18689 |
||||
INFINEON/英飞凌 |
23+ |
TO-263 |
90000 |
一定原装正品 |
|||
Infineon |
24+ |
TO-3P |
30 |
||||
INF进口原 |
17+ |
220-220F |
6200 |
||||
INFINEON英飞凌 |
23+ |
TO-3P |
5000 |
原装正品,假一罚十 |
|||
INFINEON |
18+ |
TO-3P |
85600 |
保证进口原装可开17%增值税发票 |
|||
FAIRCHILD |
2023+ |
TO-220 |
8700 |
原装现货 |
|||
INFINEON |
23+ |
TO-220 |
7000 |
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20N60BD1规格书下载地址
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20N60BD1数据表相关新闻
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2019-11-28
DdatasheetPDF页码索引
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