型号 功能描述 生产厂家 企业 LOGO 操作
20N60BD1

HiPerFAST IGBT with Diode

VCES = 600 V IC25 = 40 A VCE(sat)typ = 1.7 V tfi(typ) = 100 ns Features • International standard packages • High frequency IGBT and antiparallel FRED in one package • High current handling capability • HiPerFASTTM HDMOSTM process • MOS Gate turn-on -drive simplicity Applications • Unin

IXYS

艾赛斯

20N60BD1

HiPerFAST IGBT with Diode

LITTELFUSE

力特

High Voltage IGBT with optional Diode

VCES = 600 V IC25 = 32 A VCE(sat) typ = 2.2 V Features ● NPT IGBT technology ● low switching losses ● low tail current ● no latch up ● short circuit capability ● positive temperature coefficient for easy paralleling ● MOS input, voltage controlled ● optional ultr

IXYS

艾赛斯

HiPerFAST IGBT with Diode

VCES = 600 V IC25 = 40 A VCE(sat)typ = 1.7 V tfi(typ) = 100 ns Features • International standard packages • High frequency IGBT and antiparallel FRED in one package • High current handling capability • HiPerFASTTM HDMOSTM process • MOS Gate turn-on -drive simplicity Applications • Unin

IXYS

艾赛斯

HiPerFAST IGBT with Diode

VCES = 600 V IC25 = 40 A VCE(sat)typ = 1.7 V tfi(typ) = 100 ns Features • International standard packages • High frequency IGBT and antiparallel FRED in one package • High current handling capability • HiPerFASTTM HDMOSTM process • MOS Gate turn-on -drive simplicity Applications • Unin

IXYS

艾赛斯

20N60BD1产品属性

  • 类型

    描述

  • 型号

    20N60BD1

  • 制造商

    IXYS

  • 制造商全称

    IXYS Corporation

  • 功能描述

    HiPerFAST IGBT with Diode

更新时间:2026-3-1 16:42:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
英飞凌
22+
TO-220
8000
原装正品支持实单
Infineon
24+
TO-3P
30
N/L
25+
1
INF
16+
220-220F
11
一级代理,专注军工、汽车、医疗、工业、新能源、电力
Infineon(英飞凌)
23+
标准封装
7000
原厂原装现货订货价格优势终端BOM表可配单提供样品
INF进口原
17+
220-220F
6200
INFIENON
26+
TO-247
86720
全新原装正品价格最实惠 假一赔百
INFINEON英飞凌
23+
TO-3P
5000
原装正品,假一罚十
INFINEON
18+
TO-3P
85600
保证进口原装可开17%增值税发票
INFINEON
23+
TO-220
7000

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