包装：散装 描述：CARRY STRAP BTRY 工具 配件

Single & Dual Output DC/DC Converter

文件：271.82 Kbytes Page：4 Pages

Single & Dual Output DC/DC Converter

文件：241.37 Kbytes Page：4 Pages

Single & Dual Output DC/DC Converter

文件：171.62 Kbytes Page：4 Pages

Single & Dual Output DC/DC Converter

文件：271.82 Kbytes Page：4 Pages

Single & Dual Output DC/DC Converter

文件：241.37 Kbytes Page：4 Pages

Single & Dual Output DC/DC Converter

文件：200.71 Kbytes Page：4 Pages

Single & Dual Output DC/DC Converter

文件：171.62 Kbytes Page：4 Pages

Single & Dual Output DC/DC Converter

文件：241.37 Kbytes Page：4 Pages

Single & Dual Output DC/DC Converter

文件：200.71 Kbytes Page：4 Pages

Single & Dual Output DC/DC Converter

文件：271.82 Kbytes Page：4 Pages

Single & Dual Output DC/DC Converter

文件：241.37 Kbytes Page：4 Pages

Single & Dual Output DC/DC Converter

文件：171.62 Kbytes Page：4 Pages

SUPERCAPACITORS

Very fast charge/discharge ??High power density ??IEC 62391

文件：334.37 Kbytes Page：5 Pages

Supercapacitor

文件：128.009 Kbytes Page：1 Pages

Very fast charge/discharge High power density IEC 62391 compliant

文件：247.35 Kbytes Page：3 Pages

Very fast charge/discharge High power density IEC 62391 compliant

文件：247.35 Kbytes Page：3 Pages

Very fast charge/discharge ??High power density ??IEC 62391

文件：334.37 Kbytes Page：5 Pages

Supercapacitor

文件：136.87 Kbytes Page：1 Pages

SUPERCAPACITORS

封装/外壳：径向，Can 包装：散装 描述：CAP 2F 20% 5.5V T/H 电容器 双电层电容器（EDLC），超级电容器

SUPERCAPACITORS

Supercapacitor

文件：120.53 Kbytes Page：1 Pages

Radial Leaded Super Capacitors

文件：261.579 Kbytes Page：3 Pages

N-channel enhancement mode vertical D-MOS transistor

DESCRIPTION N-channel enhancement mode vertical D-MOS transistor in a SOT223 envelope, intended for use as a line current interruptor in telephone sets and for applications in relay, high-speed and line transformer drivers. FEATURES • Direct interface to C-MOS, TTL, etc. • High-speed switching

POWER TRANSISTORS(2.5A,1300-1500V,36W)

HORIZONTAL DEFLECTION TRANSISTOR 2.5 AMPERE POWER TRANSISTORS 1300-1500 VOLTS 36 WATTS

SMALL OUTLINE OPTOISOLATORS TRANSISTOR OUTPUT

These devices consist of a gallium arsenide infrared emitting diode optically coupled to a monolithic silicon phototransistor detector, in a surface mountable, small outline, plastic package. They are ideally suited for high density applications, and eliminate the need for through–the–board mounti

SCHOTTKY BARRIER RECTIFIERS(2.0A,20-60V)

Using the Schottky Barrier principle with a Molybdenum barrier metal. These state-of-the-art geometry features epitaxial construction with oxide passivation and metal overly contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and polarity protection diodes.

Alternate Source/ Second Source Photodiodes

PRODUCT DESCRIPTION Large area planar silicon photodiode in a waterclear, cast epoxy sidelooker, similar in outline to the TO-92 package. These diodes exhibit low dark current under reverse bias and fast speed of response.