丝印代码：2048A；CURRENT-LIMITED POWER-DISTRIBUTION SWITCHES

1FEATURES · 80-mΩ High-Side MOSFET Switch · 250 mA Continuous Current Per Channel · Independent Thermal and Short-Circuit Protection With Overcurrent Logic Output · Operating Range: 2.7-V to 5.5-V · CMOS- and TTL-Compatible Enable Inputs · 2.5-ms Typical Rise Time · Undervoltage Lockout ·

丝印代码：2048A；CURRENT-LIMITED POWER-DISTRIBUTION SWITCHES

1FEATURES · 80-mΩ High-Side MOSFET Switch · 250 mA Continuous Current Per Channel · Independent Thermal and Short-Circuit Protection With Overcurrent Logic Output · Operating Range: 2.7-V to 5.5-V · CMOS- and TTL-Compatible Enable Inputs · 2.5-ms Typical Rise Time · Undervoltage Lockout ·

丝印代码：2048A；CURRENT-LIMITED POWER-DISTRIBUTION SWITCHES

1FEATURES · 80-mΩ High-Side MOSFET Switch · 250 mA Continuous Current Per Channel · Independent Thermal and Short-Circuit Protection With Overcurrent Logic Output · Operating Range: 2.7-V to 5.5-V · CMOS- and TTL-Compatible Enable Inputs · 2.5-ms Typical Rise Time · Undervoltage Lockout ·

丝印代码：2048A；CURRENT-LIMITED POWER-DISTRIBUTION SWITCHES

1FEATURES · 80-mΩ High-Side MOSFET Switch · 250 mA Continuous Current Per Channel · Independent Thermal and Short-Circuit Protection With Overcurrent Logic Output · Operating Range: 2.7-V to 5.5-V · CMOS- and TTL-Compatible Enable Inputs · 2.5-ms Typical Rise Time · Undervoltage Lockout ·

丝印代码：2048A；CURRENT-LIMITED POWER-DISTRIBUTION SWITCHES

1FEATURES · 80-mΩ High-Side MOSFET Switch · 250 mA Continuous Current Per Channel · Independent Thermal and Short-Circuit Protection With Overcurrent Logic Output · Operating Range: 2.7-V to 5.5-V · CMOS- and TTL-Compatible Enable Inputs · 2.5-ms Typical Rise Time · Undervoltage Lockout ·

丝印代码：2048A；CURRENT-LIMITED POWER-DISTRIBUTION SWITCHES

1FEATURES · 80-mΩ High-Side MOSFET Switch · 250 mA Continuous Current Per Channel · Independent Thermal and Short-Circuit Protection With Overcurrent Logic Output · Operating Range: 2.7-V to 5.5-V · CMOS- and TTL-Compatible Enable Inputs · 2.5-ms Typical Rise Time · Undervoltage Lockout ·

UHF push-pull power LDMOS transistor

DESCRIPTION Push-pull silicon N-channel enhancement mode lateral D-MOS transistor encapsulated in a 4-lead flange package (SOT539A) with a ceramic cap. The common source is connected to the mounting flange. FEATURES • High power gain • Easy power control • Excellent ruggedness • Source on un

P-SERIES LINEAR PHOTODIODE ARRAY IMAGERS

Description In the P-series linear imagers, PerkinElmer has combined the best features of high-sensitivity photodiode array detection and high-speed charge coupled scanning to offer an uncompromising solution to the increasing demands of advanced imaging applications. Features • Extende

PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR?

文件：37.84 Kbytes Page：2 Pages

QUAD CURRENT-LIMITED POWER-DISTRIBUTION SWITCHES

文件：424.75 Kbytes Page：24 Pages

QUAD CURRENT-LIMITED POWER-DISTRIBUTION SWITCHES

文件：424.75 Kbytes Page：24 Pages