PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR?

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UHF push-pull power LDMOS transistor

DESCRIPTION Push-pull silicon N-channel enhancement mode lateral D-MOS transistor encapsulated in a 4-lead flange package (SOT539A) with a ceramic cap. The common source is connected to the mounting flange. FEATURES • High power gain • Easy power control • Excellent ruggedness • Source on un

P-SERIES LINEAR PHOTODIODE ARRAY IMAGERS

Description In the P-series linear imagers, PerkinElmer has combined the best features of high-sensitivity photodiode array detection and high-speed charge coupled scanning to offer an uncompromising solution to the increasing demands of advanced imaging applications. Features • Extende

QUAD CURRENT-LIMITED POWER-DISTRIBUTION SWITCHES

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QUAD CURRENT-LIMITED POWER-DISTRIBUTION SWITCHES

文件：424.75 Kbytes Page：24 Pages