丝印代码：N；SCHOTTKY BARRIER DIODE

FEATURES  High Speed  High Reliability  Small Package  Low Forward Voltage APPLICATIONS  High Speed Switching

DIODE (HIGH SEPPD SWITCHING APPLICATION)

High Speed Switching Application ● Small package ● Low forward voltage: VF = 0.23V (typ.) @IF = 5mA

Schottky Barrier Diode

FEATURES ● Low forward voltage. ● Small package. APPLICATIONS ● High speed switching application.

HIGH SPEED SWITCHING APPLICATION

Features ● Small Package ● Low Forward Voltage VF = 0.23V(TYP.) @IF = 5 mA

SILICON EPITAXIAL SCHOTTKY BARRIER DIODE

PNP SILICON EPITAXIAL POWER TRANSISTOR These devices are intended for use in audio frequency power amplifier and low speed switching applications

High Speed Switching Application

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