SILICON EPITAXIAL SCHOTTKY BARRIER DIODE

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DIODE (HGH SPEED SWITCHING APPLICATION)

High Speed Switching Application ● Small package ● Low forward voltage: VF (3) = 0.54V (typ.) ● Low reverse current: IR = 5μA (typ.)

High Speed Switching Diode

FEATURES ● Low forward voltage. ● Low reverse current. ● Small package. APPLICATIONS ● High-speed switching application.

SILICON EPITAXIAL SCHOTTKY BARRIER TYPE

FEATURES • Low forward voltage : VF(3)=0.54V(typ.) • Low reverse current : IR=5μA(typ.) • Lead free in compliance with EU RoHS 2011/65/EU directive • Green molding compound as per IEC61249 Std. . (Halogen Free) APPLICATIONS • Case : SOD-523 plastic • Terminals : Solderable per MIL-STD-750,M

HIGH SPEED SWITCHING APPLICATION

Features ● Small Package ● Low Forward Voltage :VF(3) = 0.54V(TYP.) ● Low Reverse Current :IR = 5 Ìa(TYP.)

High Speed Switching Application

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