Switching diode

Features 1) Glass sealed envelope. (MSD) 2) High speed. (trr=1.2ns Typ.) 3) High reliability. Applications High speed switching Construction Silicon epitaxial planar

Switching diode

1) Glass sealed envelope. (MSD)\n2) High speed. (trr=1.2ns Typ.)\n3) High reliability.Applications\n  High speed switchingConstruction\n  Silicon epitaxial planar;

Switching diode

Features 1) Glass sealed envelope. (MSD) 2) High speed. (trr=1.2ns Typ.) 3) High reliability. Applications High speed switching Construction Silicon epitaxial planar

Switching diode

Features 1) Glass sealed envelope. (MSD) 2) High speed. (trr=1.2ns Typ.) 3) High reliability. Applications High speed switching Construction Silicon epitaxial planar

封装/外壳：DO-204AG，DO-34，轴向 包装：卷带（TR） 描述：DIODE GEN PURP 80V 130MA MSD 分立半导体产品 二极管 - 整流器 - 单

封装/外壳：DO-204AG，DO-34，轴向 包装：管件 描述：DIODE GEN PURP 80V 130MA MSD 分立半导体产品 二极管 - 整流器 - 单

SWITCHING DIODES

SMALL SIGNAL SWITCHING DIODE

REVERSE VOLTAGE : 35 V CURRENT: 110 mA FEATURES ◇ Glass sealed envelope. (MSD) ◇ High reliability

HIGH SPEED SWITCHING DIODE

Features • Glass sealed envelope • High speed • High reliability

HIGH SPEED SWITCHING DIODE

FEATURES : • High switching speed: max. 4 ns • Continuous reverse voltage:max. 80 V • Repetitive peak reverse voltage:max. 90 V • Pb / RoHS Free

300mW Hermetically Sealed Glass Switching Diode

FEATURES - Fast switching device (trr