型号 功能描述 生产厂家 企业 LOGO 操作
1SS133

HIGH SPEED SWITCHING DIODE

FEATURES : • High switching speed: max. 4 ns • Continuous reverse voltage:max. 80 V • Repetitive peak reverse voltage:max. 90 V • Pb / RoHS Free

EIC

1SS133

SWITCHING DIODES

LRC

乐山无线电

1SS133

High Speed Switching Diode

Features • Lead Free Finish/Rohs Compliant (Note1) (PSuffix designates Compliant. See ordering information) • Glass sealed envelope. • High speed. (trr=1.2ns Typ) • High reliability. • Silicon epitaxial planar • Marking : Cathode band and type number • Moisture Sensitivity Lev

MCC

1SS133

130mA Axial Leaded High Speed Switching Diode

Features • High switching speed: max. 4 ns • Continuous reverse voltage:max. 80 V • Repetitive peak reverse voltage:max. 90 V • Pb / RoHS Free

SUNMATE

森美特

1SS133

Switching diode

Features 1) Glass sealed envelope. (MSD) 2) High speed. (trr=1.2ns Typ.) 3) High reliability. Applications High speed switching Construction Silicon epitaxial planar

ROHM

罗姆

1SS133

Switching diode

Features 1) Glass sealed envelope. (MSD) 2) High speed. (trr=1.2ns Typ.) 3) High reliability. Applications High speed switching Construction Silicon epitaxial planar

ROHM

罗姆

1SS133

SMALL SIGNAL SWITCHING DIODE

REVERSE VOLTAGE : 35 V CURRENT: 110 mA FEATURES ◇ Glass sealed envelope. (MSD) ◇ High reliability

BILIN

银河微电

1SS133

SWITCHING DIODE

Features · Glass sealed envelope · High speed · High reliability Applications · High-speed switching

DAESAN

1SS133

HIGH SPEED SWITCHING DIODE

Features • Glass sealed envelope • High speed • High reliability

SEMTECH_ELEC

先之科半导体

1SS133

SWITCHING DIODES

FEATURES • Fast switching Speed. • Electrically ldentical to Standerd JEDEC • High Conductance • Axial lead Package ldeally Suited for Automatic lnsertion. • Lead free in compliance with EU RoHS 2011/65/EU directive

SY

顺烨电子

1SS133

HIGH SPEED SWITCHING DIODE

FEATURES : • High switching speed: max. 4 ns • Continuous reverse voltage:max. 80 V • Repetitive peak reverse voltage:max. 90 V • Pb / RoHS Free

SYNSEMI

1SS133

Small Signal Switching Diodes

REVERSE VOLTAGE : 90 V CURRENT: 110 mA Features ◇ Glass sealed envelope. (MSD) ◇ High reliability

LUGUANG

鲁光电子

1SS133

130mA Axial Leaded High Speed Switching Diode

Features *High swiching spoed: max. 4 ns «Continuous reverse votaga:max, g0 v «Repetiive peak reverss voltage:max, 90 V Pb/ROHS Free

DGNJDZ

南晶电子

1SS133

High-speed swiching diode

Features 1. Glass sealed envelope. 2. High reliability. 3. High speed. Applications High speed switching Construction Silicon epitaxial planar

WINNERJOIN

永而佳

1SS133

Silicon Epitaxial Planar Switching Diode

Features • Glass sealed envelope • High speed • High reliability Applications • High-speed switching

GWSEMI

唯圣电子

1SS133

90V Detection switch tube

文件:287.412 Kbytes Page:2 Pages

SUNMATE

森美特

PDF上传者:深圳冠荣电子有限公司

1SS133

HIGH SPEED SWITCHING DIODES

文件:287.412 Kbytes Page:2 Pages

SUNMATE

森美特

PDF上传者:深圳冠荣电子有限公司

1SS133

Switching diode

文件:133.36 Kbytes Page:4 Pages

ROHM

罗姆

1SS133

小信号开关二极管

LUGUANG

鲁光电子

1SS133

0.13A,90V,Leaded Small Signal Switching Diodes

GALAXYCHANGZHOU GALAXY CENTURY MICROELECTRONICS CO.,LTD.

银河微电常州银河世纪微电子股份有限公司

1SS133

小信号开关二极管

STMICROELECTRONICS

意法半导体

300mW Hermetically Sealed Glass Switching Diode

FEATURES - Fast switching device (trr

TSC

台湾半导体

Switching diode

Features 1) Glass sealed envelope. (MSD) 2) High speed. (trr=1.2ns Typ.) 3) High reliability. Applications High speed switching Construction Silicon epitaxial planar

ROHM

罗姆

Switching diode

Features 1) Glass sealed envelope. (MSD) 2) High speed. (trr=1.2ns Typ.) 3) High reliability. Applications High speed switching Construction Silicon epitaxial planar

ROHM

罗姆

Switching diode

Features 1) Glass sealed envelope. (MSD) 2) High speed. (trr=1.2ns Typ.) 3) High reliability. Applications High speed switching Construction Silicon epitaxial planar

ROHM

罗姆

Switching diode

文件:133.36 Kbytes Page:4 Pages

ROHM

罗姆

High-speed switching diode

文件:120.26 Kbytes Page:3 Pages

WINNERJOIN

永而佳

300mW Hermetically Sealed Glass Switching Diode

文件:96.44 Kbytes Page:2 Pages

TSC

台湾半导体

300mW, Hermetically Sealed Glass Switching Diodes

文件:223.2 Kbytes Page:4 Pages

TSC

台湾半导体

300mW, Hermetically Sealed Glass Switching Diodes

文件:223.2 Kbytes Page:4 Pages

TSC

台湾半导体

300mW, Hermetically Sealed Glass Switching Diodes

文件:223.2 Kbytes Page:4 Pages

TSC

台湾半导体

封装/外壳:DO-204AG,DO-34,轴向 包装:卷带(TR) 描述:DIODE GEN PURP 80V 130MA MSD 分立半导体产品 二极管 - 整流器 - 单

ROHM

罗姆

封装/外壳:DO-204AG,DO-34,轴向 包装:管件 描述:DIODE GEN PURP 80V 130MA MSD 分立半导体产品 二极管 - 整流器 - 单

ROHM

罗姆

1SS133产品属性

  • 类型

    描述

  • 型号

    1SS133

  • 制造商

    Panasonic Industrial Company

  • 功能描述

    SUB ONLY

  • DIODESUB

    MA165

  • 制造商

    ROHM Semiconductor

  • 功能描述

    40V V(Rrm) Rohm Rectifier Diode DO-34

  • 制造商

    ROHM Semiconductor

  • 功能描述

    High speed switching diode, 80V, 130mA,

更新时间:2025-9-23 20:00:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
ROMH
24+
NA/
16750
原装现货,当天可交货,原型号开票
ROHM
2024
DIP
8230
16余年资质 绝对原盒原盘代理渠道 更多数量
N/A
25+
NA
880000
明嘉莱只做原装正品现货
SEMTECHEL
23+
NA
25389
专做原装正品,假一罚百!
ROHM/罗姆
22+
DO-34
8000
原装正品现货假一罚十
GULFSEMICONDUCTORLTD
24+
59779
ROHM/罗姆
2406+
SMA
71260
诚信经营!进口原装!量大价优!
TSC/台湾半导体
24+
DO34
94380
郑重承诺只做原装进口现货
TSC
24+
DO34
5000
全新原装正品,现货销售
ROMH
2019+ROHS
DO-35
66688
ROMH原装正品

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