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1SMB5921价格
参考价格：￥0.4334
型号：1SMB5921B-13 品牌：Diodes 备注：这里有1SMB5921多少钱，2025年最近7天走势，今日出价，今日竞价，1SMB5921批发/采购报价，1SMB5921行情走势销售排行榜，1SMB5921报价。| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
1SMB5921 | SURFACEMOUNTSILICONZENERDIODE FEATURES •Forsurfacemountedapplicationsinordertooptimizeboardspace. •Lowprofilepackage •Built-instrainrelief •Glasspassivatedjunction •Lowinductance •TypicalIRlessthan1.0µAabove12V •PlasticpackagehasUnderwritersLaboratoryFlammabilityClassification94V-O • | PANJITPan Jit International Inc. 強茂強茂股份有限公司 |  |   |
1SMB5921 | SURFACEMOUNTSILICONZENERDIODE FEATURES •Forsurfacemountedapplicationsinordertooptimizeboardspace. •Lowprofilepackage •Built-instrainrelief •Glasspassivatedjunction •Lowinductance •TypicalIRlessthan1.0µAabove12V •PlasticpackagehasUnderwritersLaboratoryFlammabilityClassification94V-O • | PANJITPan Jit International Inc. 強茂強茂股份有限公司 | | |
1SMB5921 | SURFACEMOUNTSILICONZENERDIODE 文件：128.949 Kbytes Page：5 Pages | PANJITPan Jit International Inc. 強茂強茂股份有限公司 | | |
1.5WattPlasticSurfaceMountSiliconZenerDiodes 1.5WattPlasticSurfaceMountSiliconZenerDiodes PLASTICSURFACEMOUNTZENERDIODES1.5WATTS3.3-200VOLTS | MotorolaMotorola, Inc 摩托罗拉加尔文制造公司 |  | | |
SILICONZENERDIODES FEATURES: *CompleteVoltageRange3.3to200Volts *Highpeakreversepowerdissipation *Highreliability *Lowleakagecurrent | EIC EIC discrete Semiconductors |  | | |
SiliconZenerDiodes Features *CompleteVoltageRange3.3to200Volts *Highpeakreversepowerdissipation *Highreliability *Lowleakagecurrent | LUGUANGShenzhen Luguang Electronic Technology Co., Ltd 鲁光电子深圳市鲁光电子科技有限公司 |  | | |
SMBKPlastic-EncapsulateDiodes Features ●Pd1.5W ●Vz3.3V-200V Applications ●StabilizingVoltage | HDSEMIJiangsu High diode Semiconductor Co., Ltd 苏海德半导体苏海德半导体有限公司 |  | | |
CompleteVoltageRange3.3to200Volts FEATURES: *CompleteVoltageRange3.3to200Volts *Highpeakreversepowerdissipation *Highreliability *Lowleakagecurrent | DGNJDZNanjing International Group Co 南晶电子东莞市南晶电子有限公司 |  | | |
3WSURFACEMOUNTZENERDIODE Features ●CompleteVoltageRange3.3to200Volts ●Highpeakreversepowerdissipation ●Highreliability ●Lowleakagecurrent | ZSELECZibo Seno Electronic Engineering Co.,Ltd 淄博圣诺电子淄博圣诺电子工程有限公司 |  | | |
ZenerDiodes3W Features ●Glasspassivatedchip ●Built-instrainrelief ●Lowinductance ●Highpeakreversepowerdissipation ●Lowreverseleakage ●Foruseinstabilizingandclipping withhighpowerrating ●RoHScompliant MechanicalData ●Case:DO214AAMoldedplastic ●Lead:SolderableperM | LEIDITECHShanghai Leiditech Electronic Technology Co., Ltd 雷卯电子上海雷卯电子科技有限公司 |  | | |
SURFACEMOUNTSILICONZENERDIODE VOLTAGE6.8to51VoltsPOWER1.5Watts FEATURES •Forsurfacemountedapplicationsinordertooptimizeboardspace. •Lowprofilepackage •Built-instrainrelief •Glasspassivatedjunction •Lowinductance •TypicalIRlessthan1.0µAabove12V •PlasticpackagehasUnderwritersLabora | PANJITPan Jit International Inc. 強茂強茂股份有限公司 | | | |
SURFACEMOUNTSILICONZENERDIODE VOLTAGE6.8to51VoltsPOWER1.5Watts FEATURES •Forsurfacemountedapplicationsinordertooptimizeboardspace. •Lowprofilepackage •Built-instrainrelief •Glasspassivatedjunction •Lowinductance •TypicalIRlessthan1.0µAabove12V •PlasticpackagehasUnderwritersLabora | PANJITPan Jit International Inc. 強茂強茂股份有限公司 | | | |
SURFACEMOUNTSILICONZENERDIODE VOLTAGE6.8to51VoltsPOWER1.5Watts FEATURES •Forsurfacemountedapplicationsinordertooptimizeboardspace. •Lowprofilepackage •Built-instrainrelief •Glasspassivatedjunction •Lowinductance •TypicalIRlessthan1.0µAabove12V •PlasticpackagehasUnderwritersLabora | PANJITPan Jit International Inc. 強茂強茂股份有限公司 | | | |
SURFACEMOUNTSILICONZENERDIODE VOLTAGE6.8to51VoltsPOWER1.5Watts FEATURES •Forsurfacemountedapplicationsinordertooptimizeboardspace. •Lowprofilepackage •Built-instrainrelief •Glasspassivatedjunction •Lowinductance •TypicalIRlessthan1.0µAabove12V •PlasticpackagehasUnderwritersLabora | PANJITPan Jit International Inc. 強茂強茂股份有限公司 | | | |
SURFACEMOUNTSILICONZENERDIODE VOLTAGE6.8to51VoltsPOWER1.5Watts FEATURES •Forsurfacemountedapplicationsinordertooptimizeboardspace. •Lowprofilepackage •Built-instrainrelief •Glasspassivatedjunction •Lowinductance •TypicalIRlessthan1.0µAabove12V •PlasticpackagehasUnderwritersLabora | PANJITPan Jit International Inc. 強茂強茂股份有限公司 | | | |
SURFACEMOUNTSILICONZENERDIODE VOLTAGE6.8to51VoltsPOWER1.5Watts FEATURES •Forsurfacemountedapplicationsinordertooptimizeboardspace. •Lowprofilepackage •Built-instrainrelief •Glasspassivatedjunction •Lowinductance •TypicalIRlessthan1.0µAabove12V •PlasticpackagehasUnderwritersLabora | PANJITPan Jit International Inc. 強茂強茂股份有限公司 | | | |
SURFACEMOUNTSILICONZENERDIODE VOLTAGE6.8to51VoltsPOWER1.5Watts FEATURES •Forsurfacemountedapplicationsinordertooptimizeboardspace. •Lowprofilepackage •Built-instrainrelief •Glasspassivatedjunction •Lowinductance •TypicalIRlessthan1.0µAabove12V •PlasticpackagehasUnderwritersLabora | PANJITPan Jit International Inc. 強茂強茂股份有限公司 | | | |
SURFACEMOUNTSILICONZENERDIODE VOLTAGE6.8to51VoltsPOWER1.5Watts FEATURES •Forsurfacemountedapplicationsinordertooptimizeboardspace. •Lowprofilepackage •Built-instrainrelief •Glasspassivatedjunction •Lowinductance •TypicalIRlessthan1.0µAabove12V •PlasticpackagehasUnderwritersLabora | PANJITPan Jit International Inc. 強茂強茂股份有限公司 | | | |
SURFACEMOUNTSILICONZENERDIODE VOLTAGE6.8to51VoltsPOWER1.5Watts FEATURES •Forsurfacemountedapplicationsinordertooptimizeboardspace. •Lowprofilepackage •Built-instrainrelief •Glasspassivatedjunction •Lowinductance •TypicalIRlessthan1.0µAabove12V •PlasticpackagehasUnderwritersLabora | PANJITPan Jit International Inc. 強茂強茂股份有限公司 | | | |
SURFACEMOUNTSILICONZENERDIODE VOLTAGE6.8to51VoltsPOWER1.5Watts FEATURES •Forsurfacemountedapplicationsinordertooptimizeboardspace. •Lowprofilepackage •Built-instrainrelief •Glasspassivatedjunction •Lowinductance •TypicalIRlessthan1.0µAabove12V •PlasticpackagehasUnderwritersLabora | PANJITPan Jit International Inc. 強茂強茂股份有限公司 | | | |
SURFACEMOUNTSILICONZENERDIODE VOLTAGE6.8to51VoltsPOWER1.5Watts FEATURES •Forsurfacemountedapplicationsinordertooptimizeboardspace. •Lowprofilepackage •Built-instrainrelief •Glasspassivatedjunction •Lowinductance •TypicalIRlessthan1.0µAabove12V •PlasticpackagehasUnderwritersLabora | PANJITPan Jit International Inc. 強茂強茂股份有限公司 | | | |
SURFACEMOUNTSILICONZENERDIODE VOLTAGE6.8to51VoltsPOWER1.5Watts FEATURES •Forsurfacemountedapplicationsinordertooptimizeboardspace. •Lowprofilepackage •Built-instrainrelief •Glasspassivatedjunction •Lowinductance •TypicalIRlessthan1.0µAabove12V •PlasticpackagehasUnderwritersLabora | PANJITPan Jit International Inc. 強茂強茂股份有限公司 | | | |
SURFACEMOUNTSILICONZENERDIODE VOLTAGE6.8to51VoltsPOWER1.5Watts FEATURES •Forsurfacemountedapplicationsinordertooptimizeboardspace. •Lowprofilepackage •Built-instrainrelief •Glasspassivatedjunction •Lowinductance •TypicalIRlessthan1.0µAabove12V •PlasticpackagehasUnderwritersLabora | PANJITPan Jit International Inc. 強茂強茂股份有限公司 | | | |
SURFACEMOUNTSILICONZENERDIODE VOLTAGE6.8to51VoltsPOWER1.5Watts FEATURES •Forsurfacemountedapplicationsinordertooptimizeboardspace. •Lowprofilepackage •Built-instrainrelief •Glasspassivatedjunction •Lowinductance •TypicalIRlessthan1.0µAabove12V •PlasticpackagehasUnderwritersLabora | PANJITPan Jit International Inc. 強茂強茂股份有限公司 | | | |
SURFACEMOUNTSILICONZENERDIODE VOLTAGE6.8to51VoltsPOWER1.5Watts FEATURES •Forsurfacemountedapplicationsinordertooptimizeboardspace. •Lowprofilepackage •Built-instrainrelief •Glasspassivatedjunction •Lowinductance •TypicalIRlessthan1.0µAabove12V •PlasticpackagehasUnderwritersLabora | PANJITPan Jit International Inc. 強茂強茂股份有限公司 | | | |
SURFACEMOUNTSILICONZENERDIODE VOLTAGE6.8to51VoltsPOWER1.5Watts FEATURES •Forsurfacemountedapplicationsinordertooptimizeboardspace. •Lowprofilepackage •Built-instrainrelief •Glasspassivatedjunction •Lowinductance •TypicalIRlessthan1.0µAabove12V •PlasticpackagehasUnderwritersLabora | PANJITPan Jit International Inc. 強茂強茂股份有限公司 | | | |
SURFACEMOUNTSILICONZENERDIODE VOLTAGE6.8to51VoltsPOWER1.5Watts FEATURES •Forsurfacemountedapplicationsinordertooptimizeboardspace. •Lowprofilepackage •Built-instrainrelief •Glasspassivatedjunction •Lowinductance •TypicalIRlessthan1.0µAabove12V •PlasticpackagehasUnderwritersLabora | PANJITPan Jit International Inc. 強茂強茂股份有限公司 | | | |
SURFACEMOUNTSILICONZENERDIODE VOLTAGE6.8to51VoltsPOWER1.5Watts FEATURES •Forsurfacemountedapplicationsinordertooptimizeboardspace. •Lowprofilepackage •Built-instrainrelief •Glasspassivatedjunction •Lowinductance •TypicalIRlessthan1.0µAabove12V •PlasticpackagehasUnderwritersLabora | PANJITPan Jit International Inc. 強茂強茂股份有限公司 | | | |
SURFACEMOUNTSILICONZENERDIODE VOLTAGE6.8to51VoltsPOWER1.5Watts FEATURES •Forsurfacemountedapplicationsinordertooptimizeboardspace. •Lowprofilepackage •Built-instrainrelief •Glasspassivatedjunction •Lowinductance •TypicalIRlessthan1.0µAabove12V •PlasticpackagehasUnderwritersLabora | PANJITPan Jit International Inc. 強茂強茂股份有限公司 | | | |
SURFACEMOUNTSILICONZENERDIODE VOLTAGE6.8to51VoltsPOWER1.5Watts FEATURES •Forsurfacemountedapplicationsinordertooptimizeboardspace. •Lowprofilepackage •Built-instrainrelief •Glasspassivatedjunction •Lowinductance •TypicalIRlessthan1.0µAabove12V •PlasticpackagehasUnderwritersLabora | PANJITPan Jit International Inc. 強茂強茂股份有限公司 | | | |
SURFACEMOUNTSILICONZENERDIODE VOLTAGE6.8to51VoltsPOWER1.5Watts FEATURES •Forsurfacemountedapplicationsinordertooptimizeboardspace. •Lowprofilepackage •Built-instrainrelief •Glasspassivatedjunction •Lowinductance •TypicalIRlessthan1.0µAabove12V •PlasticpackagehasUnderwritersLabora | PANJITPan Jit International Inc. 強茂強茂股份有限公司 | | | |
SURFACEMOUNTSILICONZENERDIODE VOLTAGE6.8to51VoltsPOWER1.5Watts FEATURES •Forsurfacemountedapplicationsinordertooptimizeboardspace. •Lowprofilepackage •Built-instrainrelief •Glasspassivatedjunction •Lowinductance •TypicalIRlessthan1.0µAabove12V •PlasticpackagehasUnderwritersLabora | PANJITPan Jit International Inc. 強茂強茂股份有限公司 | | | |
SURFACEMOUNTSILICONZENERDIODE VOLTAGE6.8to51VoltsPOWER1.5Watts FEATURES •Forsurfacemountedapplicationsinordertooptimizeboardspace. •Lowprofilepackage •Built-instrainrelief •Glasspassivatedjunction •Lowinductance •TypicalIRlessthan1.0µAabove12V •PlasticpackagehasUnderwritersLabora | PANJITPan Jit International Inc. 強茂強茂股份有限公司 | | | |
SURFACEMOUNTSILICONZENERDIODE VOLTAGE6.8to51VoltsPOWER1.5Watts FEATURES •Forsurfacemountedapplicationsinordertooptimizeboardspace. •Lowprofilepackage •Built-instrainrelief •Glasspassivatedjunction •Lowinductance •TypicalIRlessthan1.0µAabove12V •PlasticpackagehasUnderwritersLabora | PANJITPan Jit International Inc. 強茂強茂股份有限公司 | | | |
SURFACEMOUNTSILICONZENERDIODE VOLTAGE6.8to51VoltsPOWER1.5Watts FEATURES •Forsurfacemountedapplicationsinordertooptimizeboardspace. •Lowprofilepackage •Built-instrainrelief •Glasspassivatedjunction •Lowinductance •TypicalIRlessthan1.0µAabove12V •PlasticpackagehasUnderwritersLabora | PANJITPan Jit International Inc. 強茂強茂股份有限公司 | | | |
SURFACEMOUNTSILICONZENERDIODE VOLTAGE6.8to51VoltsPOWER1.5Watts FEATURES •Forsurfacemountedapplicationsinordertooptimizeboardspace. •Lowprofilepackage •Built-instrainrelief •Glasspassivatedjunction •Lowinductance •TypicalIRlessthan1.0µAabove12V •PlasticpackagehasUnderwritersLabora | PANJITPan Jit International Inc. 強茂強茂股份有限公司 | | | |
SURFACEMOUNTSILICONZENERDIODE VOLTAGE6.8to51VoltsPOWER1.5Watts FEATURES •Forsurfacemountedapplicationsinordertooptimizeboardspace. •Lowprofilepackage •Built-instrainrelief •Glasspassivatedjunction •Lowinductance •TypicalIRlessthan1.0µAabove12V •PlasticpackagehasUnderwritersLabora | PANJITPan Jit International Inc. 強茂強茂股份有限公司 | | | |
SURFACEMOUNTSILICONZENERDIODE VOLTAGE6.8to51VoltsPOWER1.5Watts FEATURES •Forsurfacemountedapplicationsinordertooptimizeboardspace. •Lowprofilepackage •Built-instrainrelief •Glasspassivatedjunction •Lowinductance •TypicalIRlessthan1.0µAabove12V •PlasticpackagehasUnderwritersLabora | PANJITPan Jit International Inc. 強茂強茂股份有限公司 | | | |
SURFACEMOUNTSILICONZENERDIODE VOLTAGE6.8to51VoltsPOWER1.5Watts FEATURES •Forsurfacemountedapplicationsinordertooptimizeboardspace. •Lowprofilepackage •Built-instrainrelief •Glasspassivatedjunction •Lowinductance •TypicalIRlessthan1.0µAabove12V •PlasticpackagehasUnderwritersLabora | PANJITPan Jit International Inc. 強茂強茂股份有限公司 | | | |
SURFACEMOUNTSILICONZENERDIODE VOLTAGE6.8to51VoltsPOWER1.5Watts FEATURES •Forsurfacemountedapplicationsinordertooptimizeboardspace. •Lowprofilepackage •Built-instrainrelief •Glasspassivatedjunction •Lowinductance •TypicalIRlessthan1.0µAabove12V •PlasticpackagehasUnderwritersLabora | PANJITPan Jit International Inc. 強茂強茂股份有限公司 | | | |
SURFACEMOUNTSILICONZENERDIODE VOLTAGE6.8to51VoltsPOWER1.5Watts FEATURES •Forsurfacemountedapplicationsinordertooptimizeboardspace. •Lowprofilepackage •Built-instrainrelief •Glasspassivatedjunction •Lowinductance •TypicalIRlessthan1.0µAabove12V •PlasticpackagehasUnderwritersLabora | PANJITPan Jit International Inc. 強茂強茂股份有限公司 | | | |
SURFACEMOUNTSILICONZENERDIODE VOLTAGE6.8to51VoltsPOWER1.5Watts FEATURES •Forsurfacemountedapplicationsinordertooptimizeboardspace. •Lowprofilepackage •Built-instrainrelief •Glasspassivatedjunction •Lowinductance •TypicalIRlessthan1.0µAabove12V •PlasticpackagehasUnderwritersLabora | PANJITPan Jit International Inc. 強茂強茂股份有限公司 | | | |
SURFACEMOUNTSILICONZENERDIODE VOLTAGE6.8to51VoltsPOWER1.5Watts FEATURES •Forsurfacemountedapplicationsinordertooptimizeboardspace. •Lowprofilepackage •Built-instrainrelief •Glasspassivatedjunction •Lowinductance •TypicalIRlessthan1.0µAabove12V •PlasticpackagehasUnderwritersLabora | PANJITPan Jit International Inc. 強茂強茂股份有限公司 | | | |
SURFACEMOUNTSILICONZENERDIODE VOLTAGE6.8to51VoltsPOWER1.5Watts FEATURES •Forsurfacemountedapplicationsinordertooptimizeboardspace. •Lowprofilepackage •Built-instrainrelief •Glasspassivatedjunction •Lowinductance •TypicalIRlessthan1.0µAabove12V •PlasticpackagehasUnderwritersLabora | PANJITPan Jit International Inc. 強茂強茂股份有限公司 | | | |
SURFACEMOUNTSILICONZENERDIODE VOLTAGE6.8to51VoltsPOWER1.5Watts FEATURES •Forsurfacemountedapplicationsinordertooptimizeboardspace. •Lowprofilepackage •Built-instrainrelief •Glasspassivatedjunction •Lowinductance •TypicalIRlessthan1.0µAabove12V •PlasticpackagehasUnderwritersLabora | PANJITPan Jit International Inc. 強茂強茂股份有限公司 | | | |
SURFACEMOUNTSILICONZENERDIODE VOLTAGE6.8to51VoltsPOWER1.5Watts FEATURES •Forsurfacemountedapplicationsinordertooptimizeboardspace. •Lowprofilepackage •Built-instrainrelief •Glasspassivatedjunction •Lowinductance •TypicalIRlessthan1.0µAabove12V •PlasticpackagehasUnderwritersLabora | PANJITPan Jit International Inc. 強茂強茂股份有限公司 | | | |
SURFACEMOUNTSILICONZENERDIODE VOLTAGE6.8to51VoltsPOWER1.5Watts FEATURES •Forsurfacemountedapplicationsinordertooptimizeboardspace. •Lowprofilepackage •Built-instrainrelief •Glasspassivatedjunction •Lowinductance •TypicalIRlessthan1.0µAabove12V •PlasticpackagehasUnderwritersLabora | PANJITPan Jit International Inc. 強茂強茂股份有限公司 | | | |
SURFACEMOUNTSILICONZENERDIODE VOLTAGE6.8to51VoltsPOWER1.5Watts FEATURES •Forsurfacemountedapplicationsinordertooptimizeboardspace. •Lowprofilepackage •Built-instrainrelief •Glasspassivatedjunction •Lowinductance •TypicalIRlessthan1.0µAabove12V •PlasticpackagehasUnderwritersLabora | PANJITPan Jit International Inc. 強茂強茂股份有限公司 | | | |
SURFACEMOUNTSILICONZENERDIODE VOLTAGE6.8to51VoltsPOWER1.5Watts FEATURES •Forsurfacemountedapplicationsinordertooptimizeboardspace. •Lowprofilepackage •Built-instrainrelief •Glasspassivatedjunction •Lowinductance •TypicalIRlessthan1.0µAabove12V •PlasticpackagehasUnderwritersLabora | PANJITPan Jit International Inc. 強茂強茂股份有限公司 | | | |
SURFACEMOUNTSILICONZENERDIODE VOLTAGE6.8to51VoltsPOWER1.5Watts FEATURES •Forsurfacemountedapplicationsinordertooptimizeboardspace. •Lowprofilepackage •Built-instrainrelief •Glasspassivatedjunction •Lowinductance •TypicalIRlessthan1.0µAabove12V •PlasticpackagehasUnderwritersLabora | PANJITPan Jit International Inc. 強茂強茂股份有限公司 | | | |
SURFACEMOUNTSILICONZENERDIODE VOLTAGE6.8to51VoltsPOWER1.5Watts FEATURES •Forsurfacemountedapplicationsinordertooptimizeboardspace. •Lowprofilepackage •Built-instrainrelief •Glasspassivatedjunction •Lowinductance •TypicalIRlessthan1.0µAabove12V •PlasticpackagehasUnderwritersLabora | PANJITPan Jit International Inc. 強茂強茂股份有限公司 | | | |
SURFACEMOUNTSILICONZENERDIODE VOLTAGE6.8to51VoltsPOWER1.5Watts FEATURES •Forsurfacemountedapplicationsinordertooptimizeboardspace. •Lowprofilepackage •Built-instrainrelief •Glasspassivatedjunction •Lowinductance •TypicalIRlessthan1.0µAabove12V •PlasticpackagehasUnderwritersLabora | PANJITPan Jit International Inc. 強茂強茂股份有限公司 | | | |
SURFACEMOUNTSILICONZENERDIODE VOLTAGE6.8to51VoltsPOWER1.5Watts FEATURES •Forsurfacemountedapplicationsinordertooptimizeboardspace. •Lowprofilepackage •Built-instrainrelief •Glasspassivatedjunction •Lowinductance •TypicalIRlessthan1.0µAabove12V •PlasticpackagehasUnderwritersLabora | PANJITPan Jit International Inc. 強茂強茂股份有限公司 | | | |
SURFACEMOUNTSILICONZENERDIODE VOLTAGE6.8to51VoltsPOWER1.5Watts FEATURES •Forsurfacemountedapplicationsinordertooptimizeboardspace. •Lowprofilepackage •Built-instrainrelief •Glasspassivatedjunction •Lowinductance •TypicalIRlessthan1.0µAabove12V •PlasticpackagehasUnderwritersLabora | PANJITPan Jit International Inc. 強茂強茂股份有限公司 | | | |
SURFACEMOUNTSILICONZENERDIODE VOLTAGE6.8to51VoltsPOWER1.5Watts FEATURES •Forsurfacemountedapplicationsinordertooptimizeboardspace. •Lowprofilepackage •Built-instrainrelief •Glasspassivatedjunction •Lowinductance •TypicalIRlessthan1.0µAabove12V •PlasticpackagehasUnderwritersLabora | PANJITPan Jit International Inc. 強茂強茂股份有限公司 | | | |
SURFACEMOUNTSILICONZENERDIODE VOLTAGE6.8to51VoltsPOWER1.5Watts FEATURES •Forsurfacemountedapplicationsinordertooptimizeboardspace. •Lowprofilepackage •Built-instrainrelief •Glasspassivatedjunction •Lowinductance •TypicalIRlessthan1.0µAabove12V •PlasticpackagehasUnderwritersLabora | PANJITPan Jit International Inc. 強茂強茂股份有限公司 | | | |
SURFACEMOUNTSILICONZENERDIODE VOLTAGE6.8to51VoltsPOWER1.5Watts FEATURES •Forsurfacemountedapplicationsinordertooptimizeboardspace. •Lowprofilepackage •Built-instrainrelief •Glasspassivatedjunction •Lowinductance •TypicalIRlessthan1.0µAabove12V •PlasticpackagehasUnderwritersLabora | PANJITPan Jit International Inc. 強茂強茂股份有限公司 | | | |
SURFACEMOUNTSILICONZENERDIODE VOLTAGE6.8to51VoltsPOWER1.5Watts FEATURES •Forsurfacemountedapplicationsinordertooptimizeboardspace. •Lowprofilepackage •Built-instrainrelief •Glasspassivatedjunction •Lowinductance •TypicalIRlessthan1.0µAabove12V •PlasticpackagehasUnderwritersLabora | PANJITPan Jit International Inc. 強茂強茂股份有限公司 | | | |
SURFACEMOUNTSILICONZENERDIODE VOLTAGE6.8to51VoltsPOWER1.5Watts FEATURES •Forsurfacemountedapplicationsinordertooptimizeboardspace. •Lowprofilepackage •Built-instrainrelief •Glasspassivatedjunction •Lowinductance •TypicalIRlessthan1.0µAabove12V •PlasticpackagehasUnderwritersLabora | PANJITPan Jit International Inc. 強茂強茂股份有限公司 | | | |
SURFACEMOUNTSILICONZENERDIODE VOLTAGE6.8to51VoltsPOWER1.5Watts FEATURES •Forsurfacemountedapplicationsinordertooptimizeboardspace. •Lowprofilepackage •Built-instrainrelief •Glasspassivatedjunction •Lowinductance •TypicalIRlessthan1.0µAabove12V •PlasticpackagehasUnderwritersLabora | PANJITPan Jit International Inc. 強茂強茂股份有限公司 | | |
1SMB5921产品属性
- 类型
描述
- 型号
1SMB5921
- 制造商
PANJIT
- 制造商全称
Pan Jit International Inc.
- 功能描述
SURFACE MOUNT SILICON ZENER DIODE
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ON(安森美) |
23+ |
SMB |
25900 |
新到现货,只有原装 |
|||
ON(安森美) |
24+ |
SMB(DO-214AA) |
43739 |
原厂可订货,技术支持,直接渠道。可签保供合同 |
|||
ON/安森美 |
2019+ |
SMB |
2500 |
原盒原包装 可BOM配套 |
|||
ON/安森美 |
23+ |
SMBDO-214 |
24190 |
原装正品代理渠道价格优势 |
|||
ON |
1822+ |
SMA |
6852 |
只做原装正品假一赔十为客户做到零风险!! |
|||
Diodes(美台) |
23+ |
NA |
20094 |
正纳10年以上分销经验原装进口正品做服务做口碑有支持 |
|||
ON |
23+ |
DO214 |
5000 |
原装正品,假一罚十 |
|||
鲁光电子 |
21+ |
SMB |
100 |
全新原装鄙视假货 |
|||
ON |
24+ |
SMD |
9750 |
一级代理分销/现货/可长期供应!! |
|||
ON |
16+ |
SMBDO-214AA |
25000 |
进口原装现货/价格优势! |
1SMB5921芯片相关品牌
1SMB5921规格书下载地址
1SMB5921参数引脚图相关
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- 35001
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- 31337
- 303c
- 2sc4226
- 2n3904
- 256p
- 2531
- 240m
- 2222a
- 20kv
- 20700
- 1SMB90
- 1SMB9.0
- 1SMB85A
- 1SMB85
- 1SMB8.5
- 1SMB8.0
- 1SMB78A
- 1SMB78
- 1SMB75A
- 1SMB75
- 1SMB70A
- 1SMB70
- 1SMB7.5
- 1SMB7.0
- 1SMB64A
- 1SMB64
- 1SMB60A
- 1SMB60
- 1SMB6.5
- 1SMB6.0
- 1SMB5929BT3G
- 1SMB5929B-13
- 1SMB5928BT3G/BKN
- 1SMB5928BT3G
- 1SMB5928B-13
- 1SMB5927BT3G
- 1SMB5927B-13
- 1SMB5926BT3G
- 1SMB5926B-13
- 1SMB5925BT3G
- 1SMB5925B-13
- 1SMB5924BT3G
- 1SMB5924B-13
- 1SMB5923BT3G
- 1SMB5923B-13
- 1SMB5922BT3G
- 1SMB5922B-13
- 1SMB5921BT3G/BKN
- 1SMB5921BT3G
- 1SMB5921B-13
- 1SMB5920BT3G
- 1SMB5920B-13
- 1SMB5919BT3G-CUTTAPE
- 1SMB5919BT3G
- 1SMB5919_R1_00001
- 1SMB5918BT3G/BKN
- 1SMB5918BT3G
- 1SMB5917BT3G
- 1SMB5917BT3
- 1SMB5917B-13
- 1SMB5916BT3G
- 1SMB5915BT3G
- 1SMB5915B-13
- 1SMB5914BT3G/BKN
- 1SMB5914BT3G
- 1SMB5913BT3G
- 1SMB58CAT3G
- 1SMB58ATR13
- 1SMB58AT3G
- 1SMB58AT3
- 1SMB58A
- 1SMB58
- 1SMB54A
- 1SMB54
- 1SMB51A
- 1SMB51
- 1SMB50A
- 1SMB5.0
- 1SMB5
- 1SMB48A
- 1SMB48
- 1SMB45A
- 1SMB45
- 1SMB43A
- 1SMB43
- 1SMB40A
- 1SMB40
- 1SMB36A
- 1SMB36
- 1SMB33A
1SMB5921数据表相关新闻
1SMB5924BT3G
1SMB5924BT3G
2023-11-151SMB5919BT3G 稳压二极管
1SMB5919BT3G稳压二极管
2023-9-41SMB5919BT3G
稳压二极管
2023-5-291SMB5947BT3G
属性参数值 商品目录稳压二极管 精度±5%_ 反向电流(Ir)1μA62.2V 功率3W 稳压值(标称值)82V
2021-10-121SMB5916BT3G 原装现货
1SMB5916BT3G可做含税，支持实单
2021-9-171SMB5927BT3G原装现货假一罚万
焕盛达竭诚为您提供一站式配套服务。当天下单，当天发货；
2020-9-15
DdatasheetPDF页码索引
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