型号 功能描述 生产厂家&企业 LOGO 操作
1S15

1.0AMP.SchottkyBarrierRectifiers

文件:792.9 Kbytes Page:2 Pages

DYELECDIYI Electronic Technology Co., Ltd.

迪一电子山东迪一电子科技有限公司

DYELEC

SchottkyBarrierRectifier

Features ●Guardringforovervoltageprotection ●Verysmallconductionlosses ●Extremelyfastswitching ●Highforwardsurgecapability ●Highfrequencyoperation ●Solderdip275°Cmax.7s,perJESD22-B106 TypicalApplications Foruseinlowvoltagehighfrequencyinverters,free

YANGJIEYangzhou yangjie electronic co., ltd

扬州扬杰电子扬州扬杰电子科技股份有限公司

YANGJIE

SCHOTTKYBARRIERRECTIFIER

ReverseVoltage-20to200VoltsForwardCurrent-1.0Ampere FEATURES •PlasticpackagehasUnderwritersLaboratoryFlammabilityClassification94V-0 •Metalsiliconjunction,majoritycarrierconduction •Lowpowerloss,highefficiency •Highcurrentcapability,Lowforwardvoltagedrop •

JINANJINGHENGJinan Jingheng (Group) Co.,Ltd

晶恒集团济南晶恒电子有限责任公司

JINANJINGHENG

SCHOTTKYBARRIERRECTIFIER

FEATURES PlasticpackagehasUnderwritersLaboratoryFlammability Classification94V-0 Metalsiliconjunction,majoritycarrierconduction Lowpowerloss,highefficiency Highcurrentcapability,Lowforwardvoltagedrop Highsurgecapability Foruseinlowvoltage,highfrequencyinverters

SAMYANGSAMYANG ELECTRONICS CO.,LTD.

SAMYANGSAMYANG ELECTRONICS CO.,LTD.

SAMYANG

SWITCHINGDIODES

LRCLeshan Radio Co., Ltd

乐山无线电乐山无线电股份有限公司

LRC

SiliconEpitaxialPlannerTypeDiode

SiliconEpitaxialPlannerTypeDiode GENERALPURPOSEAPPLICATIONFORDETECTORANDRECTIFIER. FEATURES: •LowForwardVoltage:VF=1.0V(Typ.) •SmallTotalCapacitance:CT=1.3pF(Typ.)

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TOSHIBA

SMALLSIGNALSWITCHINGDIODE

FEATURES ◇Siliconepitaxialplanardiode ◇Highspeedswitchingdiode ◇ThesediodesarealsoavailableinglasscaseDO-34

BILINGalaxy Semi-Conductor Holdings Limited

世纪微电子常州银河世纪微电子股份有限公司

BILIN

0.1AAxialLeadedSmallSignalSwitchingDiode

Features ●Siliconepitaxialplanardiode ●Highspeedswitchingdiode ●ThesediodesarealsoavailableinglasscaseDO-34

SUNMATESUNMATE electronic Co., LTD

森美特森美特半导体股份有限公司

SUNMATE

SmallSignalSwitchingDiodes

Features ◇Siliconepitaxialplanardiode ◇Highspeedswitchingdiode ◇ThesediodesarealsoavailableinglasscaseDO-34

LUGUANGShenzhen Luguang Electronic Technology Co., Ltd

鲁光电子深圳市鲁光电子科技有限公司

LUGUANG

SiliconEpitaxialPlannerTypeDiode

SiliconEpitaxialPlannerTypeDiode GENERALPURPOSEAPPLICATIONFORDETECTORANDRECTIFIER. FEATURES: •LowForwardVoltage:VF=1.0V(Typ.) •SmallTotalCapacitance:CT=1.3pF(Typ.)

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TOSHIBA

SiliconEpitaxialPlannerTypeDiode

SiliconEpitaxialPlannerTypeDiode GENERALPURPOSEAPPLICATIONFORDETECTORANDRECTIFIER. FEATURES: •LowForwardVoltage:VF=1.0V(Typ.) •SmallTotalCapacitance:CT=1.3pF(Typ.)

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TOSHIBA

SMALLSIGNALSWITCHINGDIODE

FEATURES ◇Siliconepitaxialplanardiode ◇Highspeedswitchingdiode ◇ThesediodesarealsoavailableinglasscaseDO-34

BILINGalaxy Semi-Conductor Holdings Limited

世纪微电子常州银河世纪微电子股份有限公司

BILIN

SWITCHINGDIODES

LRCLeshan Radio Co., Ltd

乐山无线电乐山无线电股份有限公司

LRC

0.1AAxialLeadedSmallSignalSwitchingDiode

Features ●Siliconepitaxialplanardiode ●Highspeedswitchingdiode ●ThesediodesarealsoavailableinglasscaseDO-34

SUNMATESUNMATE electronic Co., LTD

森美特森美特半导体股份有限公司

SUNMATE

SmallSignalSwitchingDiodes

Features ◇Siliconepitaxialplanardiode ◇Highspeedswitchingdiode ◇ThesediodesarealsoavailableinglasscaseDO-34

LUGUANGShenzhen Luguang Electronic Technology Co., Ltd

鲁光电子深圳市鲁光电子科技有限公司

LUGUANG

SiliconEpitaxialPlanarType

ULTRAHIGHSPEEDSWITCHINGAPPLICATIONS. FEATURES: •LowForwardVoltage:Vf=1.0V(Max.) •SmallTotalCapacitance:Ct=2pF(Max.) •FastReverseRecoveryTime:Trr=2ns(Max.)

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TOSHIBA

SiliconEpitaxialPlanarType

ULTRAHIGHSPEEDSWITCHINGAPPLICATIONS. FEATURES: •LowForwardVoltage:Vf=1.0V(Max.) •SmallTotalCapacitance:Ct=2pF(Max.) •FastReverseRecoveryTime:Trr=2ns(Max.)

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TOSHIBA

HIGHSPEEDSWITCHINGDIODE

FEATURES: •Highswitchingspeed:max.2ns •Continuousreversevoltage:max.50V •Repetitivepeakreversevoltage:max.55V •Pb/RoHSFree

SYNSEMI

SynSemi,Inc.

SYNSEMI

HIGHSPEEDSWITCHINGDIODE

FEATURES: •Highswitchingspeed:max.2ns •Continuousreversevoltage:max.50V •Repetitivepeakreversevoltage:max.55V •Pb/RoHSFree

SYNSEMI

SynSemi,Inc.

SYNSEMI

SiliconEpitaxialPlanarType

ULTRAHIGHSPEEDSWITCHINGAPPLICATIONS. FEATURES: •LowForwardVoltage:Vf=1.0V(Max.) •SmallTotalCapacitance:Ct=2pF(Max.) •FastReverseRecoveryTime:Trr=2ns(Max.)

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TOSHIBA

SiliconEpitaxialPlanarType

ULTRAHIGHSPEEDSWITCHINGAPPLICATIONS. FEATURES: •LowForwardVoltage:Vf=1.0V(Max.) •SmallTotalCapacitance:Ct=2pF(Max.) •FastReverseRecoveryTime:Trr=2ns(Max.)

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TOSHIBA

HIGHSPEEDSWITCHINGDIODE

FEATURES: •Highswitchingspeed:max.4ns •Continuousreversevoltage:max.30V •Repetitivepeakreversevoltage:max.35V •Pb/RoHSFree

EIC

EIC

EIC

70VDetectionswitchtube

文件:248.898 Kbytes Page:2 Pages

SUNMATESUNMATE electronic Co., LTD

森美特森美特半导体股份有限公司

PDF上传者:深圳市福田区吉富昌电子商行

SUNMATE

SMALLSIGNALSWITCHINGDIODES

文件:248.898 Kbytes Page:2 Pages

SUNMATESUNMATE electronic Co., LTD

森美特森美特半导体股份有限公司

PDF上传者:深圳市福田区吉富昌电子商行

SUNMATE

35VDetectionswitchtube

文件:248.898 Kbytes Page:2 Pages

SUNMATESUNMATE electronic Co., LTD

森美特森美特半导体股份有限公司

PDF上传者:深圳市福田区吉富昌电子商行

SUNMATE

HIGHSPEEDSWITCHINGDIODES

文件:210.627 Kbytes Page:1 Pages

SUNMATESUNMATE electronic Co., LTD

森美特森美特半导体股份有限公司

PDF上传者:深圳市福田区吉富昌电子商行

SUNMATE

HIGHSPEEDSWITCHINGDIODE

文件:25.74 Kbytes Page:1 Pages

SYNSEMI

SynSemi,Inc.

SYNSEMI

HIGHSPEEDSWITCHINGDIODE

文件:68.35 Kbytes Page:1 Pages

EIC

EIC

EIC

HIGHSPEEDSWITCHINGDIODE

文件:27.84 Kbytes Page:1 Pages

EIC

EIC

EIC

HIGHSPEEDSWITCHINGDIODE

文件:68.35 Kbytes Page:1 Pages

EIC

EIC

EIC

0.5AAxialLeadedHighSpeedSwitchingDiode

文件:48.88 Kbytes Page:1 Pages

SUNMATESUNMATE electronic Co., LTD

森美特森美特半导体股份有限公司

SUNMATE

HIGHSPEEDSWITCHINGDIODE

文件:25.74 Kbytes Page:1 Pages

SYNSEMI

SynSemi,Inc.

SYNSEMI

Film/FoilPolyesterFilmCapacitors

文件:183.37 Kbytes Page:1 Pages

CDE

Cornell Dubilier Electronics

CDE

PolyesterFilmCapacitorsGeneralPurpose,HighPeakCurrents,HighInsulationResistance

文件:375.12 Kbytes Page:3 Pages

CDE

Cornell Dubilier Electronics

CDE

PolyesterFilmCapacitors

文件:375.05 Kbytes Page:3 Pages

etc2List of Unclassifed Manufacturers

etc2未分类制造商

etc2

GeneralPurpose,HighPeakCurrents,HighInsulationResistance

文件:64.26 Kbytes Page:3 Pages

CDE

Cornell Dubilier Electronics

CDE

1S15产品属性

  • 类型

    描述

  • 型号

    1S15

  • 制造商

    JINANJINGHENG

  • 制造商全称

    Jinan Jingheng(Group) Co.,Ltd

  • 功能描述

    SCHOTTKY BARRIER RECTIFIER

更新时间:2024-5-27 17:35:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
TOSHIBA
23+
DO-35
9980
价格优势、原装现货、客户至上。欢迎广大客户来电查询
TOSH
24+
DO35
98000
全新原厂原装正品现货,可提供技术支持、样品免费!
TOSHIBA
23+
DO-35
9526
ToshibaCo
23+
NA
3670
专做原装正品,假一罚百!
TOSHIBA
1408+
DO-35
7500
绝对原装进口现货可开增值税发票
TOSHIBA/东芝
23+
NA/
7000
优势代理渠道,原装正品,可全系列订货开增值税票
TOSHIBA
3000
袋装
TOSHIBA
23+
589610
新到现货 原厂一手货源 价格秒杀代理!
TOSHIBA/东芝
2021+
NA
45000
原厂授权代理,海外优势订货渠道。可提供大量库存,详
TOSHIBA/东芝
DIP
265209
假一罚十原包原标签常备现货!

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