-1A, -500V P-CHANNEL POWER MOSFET

The UTC 1P50 is a P-channel MOS Field Effect Transistor. ituses UTC’s advanced technology to provide the customers withhigh switching speed and a minimum on-state resistance.The UTC 1P50 is suitable for high voltage switchingapplications. RDS(ON) < 14Ω @ VGS=-10V, ID=-0.5A High switching speed Low input capacitance;

Hybrid Couplers 3 dB, 90째

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Low Loss

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封装/外壳：4-SMD，无引线 包装：卷带（TR） 描述：RF DIR COUPLER 1.7GHZ-2GHZ SMD RF/IF，射频/中频和 RFID RF 定向耦合器

RF 耦合器

Hybrid Couplers 3 dB, 90째

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Hybrid Couplers 3 dB, 90

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Hybrid Couplers 3 dB, 90

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料位传感器

500V P-Channel MOSFET

Description This P-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor®’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high a

500V P-Channel MOSFET

General Description These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withs

500V P-Channel MOSFET

General Description These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology is especially tailored to minimize on-state resistance, provide superior switching performance, and withstand a

500V P-Channel MOSFET

General Description These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withs

TMOS POWER FET 1.0 AMPERES 500 VOLTS 15 OHM

TheD2PAK package has the capability of housing a larger die thanany existing surface mount package which allows it to be used inapplications that require theuse of surface mount components withhigher power and lower RDS(on)capabilities. This high voltage MOSFETuses an advanced termination scheme