-1A, -500V P-CHANNEL POWER MOSFET

Hybrid Couplers 3 dB, 90째

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Low Loss

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封装/外壳：4-SMD，无引线 包装：卷带（TR） 描述：RF DIR COUPLER 1.7GHZ-2GHZ SMD RF/IF，射频/中频和 RFID RF 定向耦合器

90度混合式耦合器 3dB

RF 耦合器

Hybrid Couplers 3 dB, 90째

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Hybrid Couplers 3 dB, 90

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Hybrid Couplers 3 dB, 90

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500V P-Channel MOSFET

Description This P-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor®’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high a

P-Channel QFET MOSFET - 500 V, - 1.5 A, 10.5 Ohm

Description This P-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor®’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high a

P-Channel QFET MOSFET - 500 V, - 1.5 A, 10.5 Ohm

Description This P-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor®’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high a

500V P-Channel MOSFET

General Description These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withs

Attenuator, Fused Fiber

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