TEMPERATURECOMPENSATED SILICON ZENER REFERENCE DIODES 6.2 V, 400 mW

Temperature-Compensated Zener Reference Diodes Temperature-compensated zener reference diodes utilizing a single chip oxide passivated junction for long-term voltage stability. A rugged, glass-enclosed, hermetically sealed structure. TEMPERATURECOMPENSATED SILICON ZENER REFERENCE DIODES 6.2 V, 4

TEMPERATURECOMPENSATED SILICON ZENER REFERENCE DIODES 6.2 V, 400 mW

Temperature-Compensated Zener Reference Diodes Temperature-compensated zener reference diodes utilizing a single chip oxide passivated junction for long-term voltage stability. A rugged, glass-enclosed, hermetically sealed structure. TEMPERATURECOMPENSATED SILICON ZENER REFERENCE DIODES 6.2 V, 4

Voltage reference diodes

DESCRIPTION Voltage reference diode in a hermetically-sealed SOD68 (DO-34) glass package. FEATURES • Temperature compensated • Reference voltage range: 5.89 to 6.51 V (typ. 6.20 V) • Low temperature coefficient range: max. 0.0005 to 0.01 /K. APPLICATION • Voltage reference sources in measur

TEMPERATURE COMPENSATED ZENER REFERENCE DIODES

• 1N821UR-1, 1N823UR-1, 1N825UR-1, 1N827UR-1 AND 1N829UR-1 AVAILABLE IN JAN, JANTX, JANTXV AND JANS PER MIL-PRF-19500/159 • TEMPERATURE COMPENSATED ZENER DIODES • LEADLESS PACKAGE FOR SURFACE MOUNT • 6.2 AND 6.55 VOLT NOMINAL ZENER VOLTAGES • METALLURGICALLY BONDED, DOUBLE PLUG CONSTRU

6.2 & 6.55 Volt Temperature Compensated 6.2 & 6.55 Volt Temperature Compensated

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