位置：首页 > IC中文资料第10124页 > 1N60Z
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
1N60Z | 1.2A, 600V N-CHANNEL POWER MOSFET ■ DESCRIPTION The UTC 1N60Z is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in power s | UTC 友顺 |   | |
1N60Z | 1.2A , 600V N-CHANNEL POWER MOSFET | UTC 友顺 | | |
GOLD BONDED GERMANIUM DIODE Germanium Glass Diode Features • Germanium Glass Diode • RoHS Compliance | ETCList of Unclassifed Manufacturers 未分类制造商 | | ||
Silicon Avalanche Diodes - 1500 Watt Metal Axial Leaded Transient Voltage Suppressors FEATURES • Hermetically sealed • Breakdown voltage range 6.8 - 200 volts • Glass passivated junction • Excellent clamping capability • Low zener impedance • 100 surge tested • -55°C to +150°C • Bi-directional MAXIMUM RATING • Peak Pulse Power (Ppk): 15000 Watts (10 x 1000µs)@25°C (see di | Littelfuse 力特 | | ||
Schottky Barrier Diode Features 1. High reliability 2. Low reverse current and low forward voltage Applications Low current rectification and high speed switching Construction Silicon epitaxial planar | FORMOSA 美丽微半导体 | | ||
JEDEC DO-7 PACKAGE JEDEC DO-7 PACKAGE | ETCList of Unclassifed Manufacturers 未分类制造商 | | ||
1.2 Amps, 600 Volts N-CHANNEL MOSFET DESCRIPTION The UTC 1N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in pow | UTC 友顺 | | ||
1.2A, 600V N-CHANNEL POWER MOSFET ■ DESCRIPTION The UTC 1N60Z is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in power s | UTC 友顺 | | ||
1.2A, 600V N-CHANNEL POWER MOSFET ■ DESCRIPTION The UTC 1N60Z is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in power s | UTC 友顺 | | ||
1.2A, 600V N-CHANNEL POWER MOSFET ■ DESCRIPTION The UTC 1N60Z is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in power s | UTC 友顺 | | ||
1.2A, 600V N-CHANNEL POWER MOSFET ■ DESCRIPTION The UTC 1N60Z is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in power s | UTC 友顺 | | ||
1.2A, 600V N-CHANNEL POWER MOSFET ■ DESCRIPTION The UTC 1N60Z is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in power s | UTC 友顺 | | ||
1.2A, 600V N-CHANNEL POWER MOSFET ■ DESCRIPTION The UTC 1N60Z is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in power s | UTC 友顺 | | ||
1.2A, 600V N-CHANNEL POWER MOSFET ■ DESCRIPTION The UTC 1N60Z is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in power s | UTC 友顺 | | ||
1.2A, 600V N-CHANNEL POWER MOSFET ■ DESCRIPTION The UTC 1N60Z is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in power s | UTC 友顺 | | ||
1.2A, 600V N-CHANNEL POWER MOSFET ■ DESCRIPTION The UTC 1N60Z is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in power s | UTC 友顺 | | ||
1.2A, 600V N-CHANNEL POWER MOSFET ■ DESCRIPTION The UTC 1N60Z is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in power s | UTC 友顺 | | ||
N-CHANNEL ENHANCEMENT MODE 文件：289.75 Kbytes Page：7 Pages | UTC 友顺 | | ||
N-CHANNEL ENHANCEMENT MODE 文件：289.75 Kbytes Page：7 Pages | UTC 友顺 | | ||
N-CHANNEL ENHANCEMENT MODE 文件：289.75 Kbytes Page：7 Pages | UTC 友顺 | | ||
N-CHANNEL ENHANCEMENT MODE 文件：289.75 Kbytes Page：7 Pages | UTC 友顺 | | ||
N-CHANNEL ENHANCEMENT MODE 文件：289.75 Kbytes Page：7 Pages | UTC 友顺 | | ||
N-CHANNEL ENHANCEMENT MODE 文件：289.75 Kbytes Page：7 Pages | UTC 友顺 | | ||
N-CHANNEL ENHANCEMENT MODE 文件：289.75 Kbytes Page：7 Pages | UTC 友顺 | | ||
N-CHANNEL ENHANCEMENT MODE 文件：289.75 Kbytes Page：7 Pages | UTC 友顺 | |
1N60Z产品属性
- 类型
描述
- 型号
1N60Z
- 制造商
UTC-IC
- 制造商全称
UTC-IC
- 功能描述
1.2A, 600V N-CHANNEL POWER MOSFET
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
MICROSEMI |
专业模块 |
MODULE |
8513 |
模块原装主营-可开原型号增税票 |
|||
NS |
DIP |
95 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
||||
1N61 |
25+ |
110 |
110 |
||||
Microsemi(美高森美) |
24+ |
Flatpack14 |
7350 |
现货供应,当天可交货!免费送样,原厂技术支持!!! |
|||
NS |
QQ咨询 |
DIP |
93 |
全新原装 研究所指定供货商 |
|||
MICROS/NSC |
CDIP16 |
1759 |
专营铁帽CANCDIP |
||||
JXND/嘉兴南电 |
24+ |
TO-252 |
50000 |
全新原装,一手货源,全场热卖! |
|||
UTC/友顺 |
20+ |
TO-252 |
11000 |
现货很近!原厂很远!只做原装 |
|||
NS |
25+ |
DIP |
8000 |
只有原装 |
|||
CJ/长电 |
24+ |
TO-252 |
50000 |
只做原装，欢迎询价，量大价优 |
1N60Z规格书下载地址
1N60Z参数引脚图相关
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- 1N6096
- 1N6095R
1N60Z数据表相关新闻
1N60G-SOT223R-B-TG_UTC代理商
1N60G-SOT223R-B-TG_UTC代理商
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全新原装进口，质量保证，宇集芯一对一服务您放心的品质，急速发货，VMI提供世界上最全套的高压二极管。轴向引线和SMD二极管的范围从2kV到20kV。所有的晶圆都是在我们的设备中掺杂、扩散和金属化的。我们提供广泛的测试，以确保我们的客户收到最/高质量的二极管。
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全新原装进口，质量保证，宇集芯您放心的品质，VMI提供世界上最全套的高压二极管。轴向引线和SMD二极管的范围从2kV到20kV。所有的晶圆都是在我们的设备中掺杂、扩散和金属化的。我们提供广泛的测试，以确保我们的客户收到最/高质量的二极管。
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DdatasheetPDF页码索引
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