| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
1N60Z | 1.2A, 600V N-CHANNEL POWER MOSFET ■ DESCRIPTION The UTC 1N60Z is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in power s | UTC 友顺 |   | |
1N60Z | 1.2A , 600V N-CHANNEL POWER MOSFET The UTC 1N60Z is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in power supplies, PWM motor • RDS(ON) =11.5Ω@VGS = 10V. \n• Low reverse transfer capacitance (CRSS = typical 3.0 pF) \n• Avalanche energy specified \n• Improved dv/dt capability, high ruggedness; | UTC 友顺 | | |
1.2A, 600V N-CHANNEL POWER MOSFET ■ DESCRIPTION The UTC 1N60Z is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in power s | UTC 友顺 | | ||
1.2A, 600V N-CHANNEL POWER MOSFET ■ DESCRIPTION The UTC 1N60Z is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in power s | UTC 友顺 | | ||
1.2A, 600V N-CHANNEL POWER MOSFET ■ DESCRIPTION The UTC 1N60Z is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in power s | UTC 友顺 | | ||
1.2A, 600V N-CHANNEL POWER MOSFET ■ DESCRIPTION The UTC 1N60Z is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in power s | UTC 友顺 | | ||
1.2A, 600V N-CHANNEL POWER MOSFET ■ DESCRIPTION The UTC 1N60Z is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in power s | UTC 友顺 | | ||
1.2A, 600V N-CHANNEL POWER MOSFET ■ DESCRIPTION The UTC 1N60Z is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in power s | UTC 友顺 | | ||
1.2A, 600V N-CHANNEL POWER MOSFET ■ DESCRIPTION The UTC 1N60Z is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in power s | UTC 友顺 | | ||
1.2A, 600V N-CHANNEL POWER MOSFET ■ DESCRIPTION The UTC 1N60Z is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in power s | UTC 友顺 | | ||
1.2A, 600V N-CHANNEL POWER MOSFET ■ DESCRIPTION The UTC 1N60Z is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in power s | UTC 友顺 | | ||
1.2A, 600V N-CHANNEL POWER MOSFET ■ DESCRIPTION The UTC 1N60Z is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in power s | UTC 友顺 | | ||
N-CHANNEL ENHANCEMENT MODE 文件：289.75 Kbytes Page：7 Pages | UTC 友顺 | | ||
N-CHANNEL ENHANCEMENT MODE 文件：289.75 Kbytes Page：7 Pages | UTC 友顺 | | ||
N-CHANNEL ENHANCEMENT MODE 文件：289.75 Kbytes Page：7 Pages | UTC 友顺 | | ||
N-CHANNEL ENHANCEMENT MODE 文件：289.75 Kbytes Page：7 Pages | UTC 友顺 | | ||
N-CHANNEL ENHANCEMENT MODE 文件：289.75 Kbytes Page：7 Pages | UTC 友顺 | | ||
N-CHANNEL ENHANCEMENT MODE 文件：289.75 Kbytes Page：7 Pages | UTC 友顺 | | ||
N-CHANNEL ENHANCEMENT MODE 文件：289.75 Kbytes Page：7 Pages | UTC 友顺 | | ||
N-CHANNEL ENHANCEMENT MODE 文件：289.75 Kbytes Page：7 Pages | UTC 友顺 | | ||
TMOS POWER FET 1.0 AMPERE 600 VOLTS RDS(on) = 8.0 OHM TMOS E-FET™ Power Field Effect Transistor DPAK for Surface Mount N-Channel Enhancement-Mode Silicon Gate This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage–blocking capability without degrading performance over time. In addition this advanced TMOS E | MOTOROLA 摩托罗拉 | | ||
TMOS POWER FET 1.0 AMPERES 600 VOLTS RDS(on) = 8.0 OHM TMOS E-FET Power Field Effect Transistor N–Channel Enhancement–Mode Silicon Gate This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage–blocking capability without degrading performance over time. In addition, this advanced TMOS E–FET is designed to withstand hi | MOTOROLA 摩托罗拉 | | ||
PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope featuring high avalanche energy capability, stable blocking voltage, fast switching and high thermal cycling performance with low thermal resistance. Intended for use in Switched Mode Power Supplies | PHILIPS 飞利浦 | | ||
PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope suitable for surface mounting featuring high avalanche energy capability, stable blocking voltage, fast switching and high thermal cycling performance. Intended for use in Compact Fluorescent Lights | PHILIPS 飞利浦 | | ||
PowerMOS transistor Isolated version of PHP1N60E GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a full pack, plastic envelope featuring high avalanche energy capability, stable blocking voltage, fast switching and high thermal cycling performance with low thermal resistance. Intended for use in Switched Mode Pow | PHILIPS 飞利浦 | |
1N60Z产品属性
- 类型
描述
- VGS(±V)：
±20
- ID(A)：
1.2
- RDS(ON)MAX.(mΩ)atVGS=10V：
11500
- CISSTYP.(pF)：
120
- COSSTYP.(pF)：
20
- CRSSTYP.(pF)：
3
- QgTYP.(nC)：
5
- QgsTYP.(nC)：
1
- QgdTYP.(nC)：
2.6
- VGS(th)(V)MIN.：
2
- VGS(th)(V)MAX.：
4
- TrrTYP.(nS)：
160
- QrrTYP.(nC)：
300
- Package：
SOT-223_TO-92_TO-252
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
UTC/友顺 |
2022+ |
TO-252 |
32500 |
原厂代理 终端免费提供样品 |
|||
UTC/友顺 |
23+ |
TO-252 |
79999 |
原厂授权代理,海外优势订货渠道。可提供大量库存,详 |
|||
UTC/友顺 |
20+ |
TO-252 |
11000 |
现货很近!原厂很远!只做原装 |
1N60Z规格书下载地址
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DdatasheetPDF页码索引
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