Optimized for Radio Frequency Response

Optimized for Radio Frequency Response Can be used in many AM, FM and TV-IF applications, replacing point contact devices. Features ● Lower leakage current ● Flat junction capacitance ● High mechanical strength ● At least 1 million hours MTBF ● BKCs Sigma-Bond™ plating for problem free sold

0.5 Amps, 600 Volts N-CHANNEL MOSFET

DESCRIPTION The UTC 1N60A is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in powe

GOLD BONDED DIODES

[VMI] 200 V - 1,000 V Single Phase Bridge 22.0 A - 25.0 A Forward Current 70 ns - 3000 ns Recovery Time

Drain Current ID= 1.0A@ TC=25C

• FEATURES • Drain Current ID= 1.0A@ TC=25℃ • Drain Source Voltage- : VDSS= 600V(Min) • Static Drain-Source On-Resistance : RDS(on) = 12Ω(Max) • Fast Switching • APPLICATIONS • Switching applications in power supplies • Motor controls,high efficient DC to DC converters

Germanium Diodes

分立

1A 600V N-channel enhanced field effect transistor

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0.5 Amps, 600/650 Volts N-CHANNEL MOSFET

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0.5A, 600V N-CHANNEL POWER MOSFET

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0.5A, 600V N-CHANNEL POWER MOSFET

The UTC 1N60A-CB is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in power supplies, • RDS(ON) <10Ω @ VGS = 10V, ID = 0.5A \n• Avalanche energy specified \n• Improved dv/dt capability, high ruggedness;

0.5 Amps, 600/650 Volts N-CHANNEL MOSFET

文件：224.57 Kbytes Page：8 Pages

0.5A, 600V N-CHANNEL POWER MOSFET

文件：218.61 Kbytes Page：8 Pages

N-CHANNEL POWER MOSFET

文件：240.68 Kbytes Page：7 Pages

N-CHANNEL POWER MOSFET

文件：240.68 Kbytes Page：7 Pages

N-CHANNEL POWER MOSFET

文件：240.68 Kbytes Page：7 Pages

0.5A, 600V N-CHANNEL POWER MOSFET

文件：218.61 Kbytes Page：8 Pages

N-CHANNEL POWER MOSFET

文件：240.68 Kbytes Page：7 Pages

0.5A, 600V N-CHANNEL POWER MOSFET

文件：218.61 Kbytes Page：8 Pages

N-CHANNEL POWER MOSFET

文件：240.68 Kbytes Page：7 Pages

N-CHANNEL POWER MOSFET

文件：240.68 Kbytes Page：7 Pages

0.5 Amps, 600/650 Volts N-CHANNEL MOSFET

文件：224.57 Kbytes Page：8 Pages

0.5 Amps, 600/650 Volts N-CHANNEL MOSFET

文件：224.57 Kbytes Page：8 Pages

N-CHANNEL POWER MOSFET

文件：240.68 Kbytes Page：7 Pages

N-CHANNEL POWER MOSFET

文件：240.68 Kbytes Page：7 Pages

N-CHANNEL POWER MOSFET

文件：240.68 Kbytes Page：7 Pages

0.5A, 600V N-CHANNEL POWER MOSFET

文件：218.61 Kbytes Page：8 Pages

0.5A, 600V N-CHANNEL POWER MOSFET

文件：218.61 Kbytes Page：8 Pages

N-CHANNEL POWER MOSFET

文件：240.68 Kbytes Page：7 Pages

N-CHANNEL POWER MOSFET

文件：240.68 Kbytes Page：7 Pages

0.5 Amps, 600/650 Volts N-CHANNEL MOSFET

文件：224.57 Kbytes Page：8 Pages

0.5 Amps, 600/650 Volts N-CHANNEL MOSFET

文件：224.57 Kbytes Page：8 Pages

TMOS POWER FET 1.0 AMPERE 600 VOLTS RDS(on) = 8.0 OHM

TMOS E-FET™ Power Field Effect Transistor DPAK for Surface Mount N-Channel Enhancement-Mode Silicon Gate This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage–blocking capability without degrading performance over time. In addition this advanced TMOS E

TMOS POWER FET 1.0 AMPERES 600 VOLTS RDS(on) = 8.0 OHM

TMOS E-FET Power Field Effect Transistor N–Channel Enhancement–Mode Silicon Gate This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage–blocking capability without degrading performance over time. In addition, this advanced TMOS E–FET is designed to withstand hi

PowerMOS transistor

GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope featuring high avalanche energy capability, stable blocking voltage, fast switching and high thermal cycling performance with low thermal resistance. Intended for use in Switched Mode Power Supplies

PowerMOS transistor

GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope suitable for surface mounting featuring high avalanche energy capability, stable blocking voltage, fast switching and high thermal cycling performance. Intended for use in Compact Fluorescent Lights

PowerMOS transistor Isolated version of PHP1N60E

GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a full pack, plastic envelope featuring high avalanche energy capability, stable blocking voltage, fast switching and high thermal cycling performance with low thermal resistance. Intended for use in Switched Mode Pow