Optimized for Radio Frequency Response

Optimized for Radio Frequency Response Can be used in many AM, FM and TV-IF applications, replacing point contact devices. Features ● Lower leakage current ● Flat junction capacitance ● High mechanical strength ● At least 1 million hours MTBF ● BKCs Sigma-Bond™ plating for problem free sold

0.5 Amps, 600 Volts N-CHANNEL MOSFET

DESCRIPTION The UTC 1N60A is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in powe

GOLD BONDED DIODES

[VMI] 200 V - 1,000 V Single Phase Bridge 22.0 A - 25.0 A Forward Current 70 ns - 3000 ns Recovery Time

Drain Current ID= 1.0A@ TC=25C

• FEATURES • Drain Current ID= 1.0A@ TC=25℃ • Drain Source Voltage- : VDSS= 600V(Min) • Static Drain-Source On-Resistance : RDS(on) = 12Ω(Max) • Fast Switching • APPLICATIONS • Switching applications in power supplies • Motor controls,high efficient DC to DC converters

0.5 Amps, 600/650 Volts N-CHANNEL MOSFET

文件：224.57 Kbytes Page：8 Pages

1A 600V N-channel enhanced field effect transistor

文件：788.99 Kbytes Page：5 Pages

0.5A, 600V N-CHANNEL POWER MOSFET

文件：218.61 Kbytes Page：8 Pages

Germanium Diodes

GOLD BONDED GERMANIUM DIODE

Germanium Glass Diode Features • Germanium Glass Diode • RoHS Compliance

Silicon Avalanche Diodes - 1500 Watt Metal Axial Leaded Transient Voltage Suppressors

FEATURES • Hermetically sealed • Breakdown voltage range 6.8 - 200 volts • Glass passivated junction • Excellent clamping capability • Low zener impedance • 100 surge tested • -55°C to +150°C • Bi-directional MAXIMUM RATING • Peak Pulse Power (Ppk): 15000 Watts (10 x 1000µs)@25°C (see di

Schottky Barrier Diode

Features 1. High reliability 2. Low reverse current and low forward voltage Applications Low current rectification and high speed switching Construction Silicon epitaxial planar

JEDEC DO-7 PACKAGE

JEDEC DO-7 PACKAGE

1.2 Amps, 600 Volts N-CHANNEL MOSFET

DESCRIPTION The UTC 1N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in pow

0.5 Amps, 600/650 Volts N-CHANNEL MOSFET

文件：224.57 Kbytes Page：8 Pages

0.5A, 600V N-CHANNEL POWER MOSFET

文件：218.61 Kbytes Page：8 Pages

N-CHANNEL POWER MOSFET

文件：240.68 Kbytes Page：7 Pages

0.5A, 600V N-CHANNEL POWER MOSFET

N-CHANNEL POWER MOSFET

文件：240.68 Kbytes Page：7 Pages

N-CHANNEL POWER MOSFET

文件：240.68 Kbytes Page：7 Pages

0.5A, 600V N-CHANNEL POWER MOSFET

文件：218.61 Kbytes Page：8 Pages

0.5A, 600V N-CHANNEL POWER MOSFET

文件：218.61 Kbytes Page：8 Pages

N-CHANNEL POWER MOSFET

文件：240.68 Kbytes Page：7 Pages

N-CHANNEL POWER MOSFET

文件：240.68 Kbytes Page：7 Pages

N-CHANNEL POWER MOSFET

文件：240.68 Kbytes Page：7 Pages

0.5 Amps, 600/650 Volts N-CHANNEL MOSFET

文件：224.57 Kbytes Page：8 Pages

0.5 Amps, 600/650 Volts N-CHANNEL MOSFET

文件：224.57 Kbytes Page：8 Pages

N-CHANNEL POWER MOSFET

文件：240.68 Kbytes Page：7 Pages

N-CHANNEL POWER MOSFET

文件：240.68 Kbytes Page：7 Pages

N-CHANNEL POWER MOSFET

文件：240.68 Kbytes Page：7 Pages

0.5A, 600V N-CHANNEL POWER MOSFET

文件：218.61 Kbytes Page：8 Pages

0.5A, 600V N-CHANNEL POWER MOSFET

文件：218.61 Kbytes Page：8 Pages

N-CHANNEL POWER MOSFET

文件：240.68 Kbytes Page：7 Pages

N-CHANNEL POWER MOSFET

文件：240.68 Kbytes Page：7 Pages

0.5 Amps, 600/650 Volts N-CHANNEL MOSFET

文件：224.57 Kbytes Page：8 Pages

0.5 Amps, 600/650 Volts N-CHANNEL MOSFET

文件：224.57 Kbytes Page：8 Pages