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型号 功能描述 生产厂家&企业 LOGO 操作
1N5930

SILICON1.5WATTZENERDIODES

DESCRIPTION The1N5913-5956Bseriesof1.5wattZenersprovidesvoltageregulationinaselectionfrom3.3to200voltswithdifferenttolerancesasidentifiedbysuffixletteronthepart.TheseplasticencapsulatedZenershavemoistureclassificationofLevel1withnodrypackrequired.Theya

MicrosemiMicrosemi Corporation

美高森美美高森美公司

Microsemi
1N5930

SILICONZENERDIODE

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体产品股份有限公司

NJSEMI
1N5930

SILICON1.5WATTZENERDIODES

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体产品股份有限公司

NJSEMI
1N5930

ZENERDIODES

FEATURES: *CompleteVoltageRange3.3to200Volts *Highpeakreversepowerdissipation *Highreliability *Lowleakagecurrent

TAYCHIPSTShenzhen Taychipst Electronic Co., Ltd

泰迪斯电子深圳市泰迪斯电子科技有限公司

TAYCHIPST
1N5930

ZENERDIODES

文件：2.01679 Mbytes Page：14 Pages

ZSELECZibo Seno Electronic Engineering Co.,Ltd

淄博圣诺电子淄博圣诺电子工程有限公司

ZSELEC
1N5930A

SILICONZENERDIODES

SILICONZENERDIODES AvailableNon-RoHS(standard)orRoHScompliant(addPBFsuffix). Availableas“HR”(highreliability)screenedperMIL-PRF-19500,JANTXlevel.Add“HR”suffixtobasepartnumber.

DIGITRON

Digitron Semiconductors

DIGITRON
1N5930A

POWERDISSIPATION:1.5W

Features ◇Siliconplanarpowerzenerdiodes ◇Nosuffixindicatesa±20toleranceonnominalVz. SuffixAdenotesa±10,SuffixBdenotesa±5, SuffixCdenotesa±2,SuffixDdenotesa±1.

LUGUANGShenzhen Luguang Electronic Technology Co., Ltd

鲁光电子深圳市鲁光电子科技有限公司

LUGUANG
1N5930A

SILICONZENERDIODES

FEATURES: *CompleteVoltageRange3.3to200Volts *Highpeakreversepowerdissipation *Highreliability *Lowleakagecurrent

SYNSEMI

SynSemi，Inc.

SYNSEMI
1N5930A

1.5WattZENERDIODES(3.3Vto200V)

Features ■5&10VOLTAGETOLERANCESAVAILABLE ■WIDEVOLTAGERANGE ■MEETSULSPECIFICATION94V-0

FCI

Amphenol ICC

FCI
1N5930A

SILICONZENERDIODES

FEATURES: *CompleteVoltageRange3.3to200Volts *Highpeakreversepowerdissipation *Highreliability *Lowleakagecurrent *Pb/RoHSFree

EIC

EIC

EIC
1N5930B

1.5WattZenerDiode11to200Volts

Features •GlassPassivatedJunction •LowProfilePackage •LowInductance •Built-inStrainRelief

MCCMicro Commercial Components

美微科美微科半导体公司

MCC
1N5930B

SILICON1.5WATTZENERDIODES

DESCRIPTION The1N5913-5956Bseriesof1.5wattZenersprovidesvoltageregulationinaselectionfrom3.3to200voltswithdifferenttolerancesasidentifiedbysuffixletteronthepart.TheseplasticencapsulatedZenershavemoistureclassificationofLevel1withnodrypackrequired.Theya

MicrosemiMicrosemi Corporation

美高森美美高森美公司

Microsemi
1N5930B

GLASSPASSIVATEDJUNCTIONSILICONZENERDIODE(VOLTAGE-11TO200VoltsPower-1.5Watts)

VOLTAGE3.3to200VoltsPOWER1.5Watts FEATURES •Lowprofilepackage •Built-instrainrelief •Lowinductance •PlasticpackagehasUnderwritersLaboratoryFlammabilityClassification94V-O •Pbfreeproductareavailable:99SncanmeetRoHSenvironmentsubstancedirectiverequest

PANJITPANJIT International Inc.

强茂強茂股份有限公司

PANJIT
1N5930B

GLASSPASSIVATEDJUNCTIONSILICONZENERDIODE

TRSYS

Transys Electronics

TRSYS
1N5930B

1.5WSILICONZENERDIODE

VOLTAGERANGE3.3to200Volts FEATURES *Zenervoltage3.3Vto200V *Withstandslargesurgestresses

JGDJinan Gude Electronic Device

济南固锝电子济南固锝电子器件有限公司

JGD
1N5930B

Axial-Leaded1.5WattZenerDiodes

DESCRIPTION The1N5913BG-5956BGseriesof1.5wattZenersprovidesvoltageregulationinaselectionfrom3.3to200voltswithavarietyoftolerancesavailable.Theyarealsoavailableinvariousmilitaryequivalentscreeninglevelsforhighreliability.TheseglassencapsulatedZenerswithaG

MicrosemiMicrosemi Corporation

美高森美美高森美公司

Microsemi
1N5930B

Axial-Leaded1.5WattZenerDiodes

DESCRIPTION The1N5913-5956Bseriesof1.5wattZenersprovidesvoltageregulationinaselectionfrom3.3to200voltswithdifferenttolerancesasidentifiedbysuffixletteronthepart.TheseplasticencapsulatedZenershavemoistureclassificationofLevel1withnodrypackrequired.Theya

MicrosemiMicrosemi Corporation

美高森美美高森美公司

Microsemi
1N5930B

GLASSPASSIVATEDJUNCTIONSILICONZENERDIODES

VOLTAGE3.3to200VoltsPOWER1.5Watts FEATURES •Lowprofilepackage •Built-instrainrelief •Lowinductance •PlasticpackagehasUnderwritersLaboratoryFlammabilityClassification94V-O •Pbfreeproductareavailable:99SncanmeetRoHSenvironmentsubstancedirectiverequest

PANJITPANJIT International Inc.

强茂強茂股份有限公司

PANJIT
1N5930B

3WDO??1SurmeticTM30ZenerVoltageRegulators

Thisisacompleteseriesof3WZenerdiodeswithlimitsandexcellentoperatingcharacteristicsthatreflectthesuperiorcapabilitiesofsilicon−oxidepassivatedjunctions.Allthisinanaxial−lead, transfer−moldedplasticpackagethatoffersprotectioninallcommonenvironmentalcondition

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI
1N5930B

Axial-Leaded1.5Wattdiodes

Axial-Leaded1.5Wattdiodes

AMMSEMI

American Microsemiconductor

AMMSEMI
1N5930B

1.5WZenerDiodes

Features •LowProfilePackage •1.5WPowerDissipation •Built-inStrainRelief •LowInductance •HighStability •ZenerVoltagefrom3.3Vto56V •RoHSCompliant

TAITRON

TAITRON

TAITRON
1N5930B

SILICONZENERDIODES

FEATURES: *CompleteVoltageRange3.3to200Volts *Highpeakreversepowerdissipation *Highreliability *Lowleakagecurrent

EIC

EIC

EIC
1N5930B

SILICONZENERDIODES

VOLTAGE3.3to200VoltsPOWER1.5Watts FEATURES •Lowprofilepackage •Built-instrainrelief •Lowinductance •PlasticpackagehasUnderwritersLaboratoryFlammabilityClassification94V-O •Pbfreeproductareavailable:99SncanmeetRoHSenvironmentsubstancedirectiverequest

PANJITPANJIT International Inc.

强茂強茂股份有限公司

PANJIT
1N5930B

SILICONZENERDIODE1.5WATT,3.3THRU200VOLTS

DESCRIPTION: TheCENTRALSEMICONDUCTOR1N5913BseriessiliconZenerdiodeisahighqualityvoltageregulatordesignedforuseinautomotive,industrial,commercial,entertainmentandcomputerapplications.

CentralCentral Semiconductor Corp

美国中央半导体

Central
1N5930B

1.5WattZENERDIODES(3.3Vto200V)

Features ■5&10VOLTAGETOLERANCESAVAILABLE ■WIDEVOLTAGERANGE ■MEETSULSPECIFICATION94V-0

FCI

Amphenol ICC

FCI
1N5930B

3WSILICONZENERDIODES

3WSILICONZENERDIODES

SEMTECH_ELECSEMTECH ELECTRONICS LTD.

先之科半导体先之科半导体科技（东莞）有限公司

SEMTECH_ELEC
1N5930B

GLASSPASSIVATEDJUNCTIONSILICONZENERDIODEVOLTAGE-11TO200Volts

FEATURES ●Lowprofilepackage ●Built-instrainrelief ●Glasspassivatedjunction ●Lowinductance ●TypicalIRlessthan1£gAabove11V ●Hightemperaturesoldering:260℃/10secondsatterminals ●PlasticpackagehasUnderwritersLaboratory FlammabilityClassificati

GXELECTRONICSShandong Xinghe Minghui Electronics Co., Ltd

星合明辉电子山东星合明辉电子有限公司

GXELECTRONICS
1N5930B

1.5WATTSILICONZENERDIODE

FEATURES ●PLASTICPACKAGEHASUNDERWRITERSLABORATORYFLAMMABILITYCLASSIFICATION94V-0 ●LOWZENERIMPEDANCE ●EXCELLENTCLAMPINGCAPABILITY MECHANICALDATA ●CASE:MOLDEDPLASTIC,DO41,DIMENSIONSININCHESAND(MILLIMETERS) ●TERMINALS:AXIALLEADSSOLDERABLEPERMIL-STD-20

FRONTIER

Frontier Electronics

FRONTIER
1N5930B

ZenerDiode

■Feature ●Pt1.5W ●Vz3.3V-240V Notes: 1.ZenerTolerance:±5. 2.Thezenerimpedanceisderivedfromthe60-cycleacvoltage,whichresultswhenanaccurrenthavinganrmsvalueequalto10ofthedczenercurrent(IZTorIZK)issuperimposedtoIZTorIZK.。 3.Themaxzenercurrent

YANGJIEYangzhou yangjie electronic co., ltd

扬州扬杰电子扬州扬杰电子科技股份有限公司

YANGJIE
1N5930B

1.5WattsAxialLeadedZenerDiodes

Features ●CompleteVoltageRange3.3to200Volts ●Highreliability ●Highpeakreversepowerdissipation ●Lowleakagecurrent

SUNMATESUNMATE electronic Co., LTD

森美特森美特半导体股份有限公司

SUNMATE
1N5930B

ZenerDiodes1N59Series

FEATURES ●Ptot1.5W ●Vz3.3V-240V

RFERFE international

RFE国际公司RFE国际股份有限公司

RFE
1N5930B

SILICONZENERDIODES

FEATURES: *CompleteVoltageRange3.3to200Volts *Highpeakreversepowerdissipation *Highreliability *Lowleakagecurrent *Pb/RoHSFree

FORMOSAFormosa MS

美丽微半导体美丽微半导体股份有限公司

FORMOSA
1N5930B

AxialLeadZenerDiodes

VZ:5.6to200V PD:1.5W Features ●Glasspassivatedchip ●Lowleakage ●Built-instrainrelief ●Lowinductance ●Highpeakreversepowerdissipation ●Lead(Pb)-freecomponent ●Foruseinstabilizingandclippingcircuits withhighpowerrating MechanicalData ●Case:Moldedp

ANOVAAnova Technologies CO., LTD.

林朋科技

ANOVA
1N5930BG

3WDO??1SurmeticTM30ZenerVoltageRegulators

Thisisacompleteseriesof3WZenerdiodeswithlimitsandexcellentoperatingcharacteristicsthatreflectthesuperiorcapabilitiesofsilicon−oxidepassivatedjunctions.Allthisinanaxial−lead, transfer−moldedplasticpackagethatoffersprotectioninallcommonenvironmentalcondition

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI
1N5930B-LFR

1.5WATTSILICONZENERDIODE

FEATURES ●PLASTICPACKAGEHASUNDERWRITERSLABORATORYFLAMMABILITYCLASSIFICATION94V-0 ●LOWZENERIMPEDANCE ●EXCELLENTCLAMPINGCAPABILITY ●LEADFREE MECHANICALDATA ●CASE:MOLDEDPLASTIC,DO41,DIMENSIONSININCHESAND(MILLIMETERS) ●TERMINALS:AXIALLEADSSOLDERABLE

FRONTIER

Frontier Electronics

FRONTIER
1N5930BP

Axial-Leaded1.5WattZenerDiodes

DESCRIPTION The1N5913-5956Bseriesof1.5wattZenersprovidesvoltageregulationinaselectionfrom3.3to200voltswithdifferenttolerancesasidentifiedbysuffixletteronthepart.TheseplasticencapsulatedZenershavemoistureclassificationofLevel1withnodrypackrequired.Theya

MicrosemiMicrosemi Corporation

美高森美美高森美公司

Microsemi
1N5930BRL

3WDO??1SurmeticTM30ZenerVoltageRegulators

Thisisacompleteseriesof3WZenerdiodeswithlimitsandexcellentoperatingcharacteristicsthatreflectthesuperiorcapabilitiesofsilicon−oxidepassivatedjunctions.Allthisinanaxial−lead, transfer−moldedplasticpackagethatoffersprotectioninallcommonenvironmentalcondition

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI
1N5930BRLG

3WDO??1SurmeticTM30ZenerVoltageRegulators

Thisisacompleteseriesof3WZenerdiodeswithlimitsandexcellentoperatingcharacteristicsthatreflectthesuperiorcapabilitiesofsilicon−oxidepassivatedjunctions.Allthisinanaxial−lead, transfer−moldedplasticpackagethatoffersprotectioninallcommonenvironmentalcondition

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI
1N5930A

1.5W16VZenerdiode

文件：505.379 Kbytes Page：3 Pages

SUNMATESUNMATE electronic Co., LTD

森美特森美特半导体股份有限公司

PDF上传者：深圳市福田区吉富昌电子商行

SUNMATE
1N5930B

1.5WattsAxialLeadedZenerDiodes

文件：422.798 Kbytes Page：2 Pages

SUNMATESUNMATE electronic Co., LTD

森美特森美特半导体股份有限公司

PDF上传者：深圳市福田区吉富昌电子商行

SUNMATE
1N5930B

3W16VZenerdiode

文件：738.238 Kbytes Page：4 Pages

SUNMATESUNMATE electronic Co., LTD

森美特森美特半导体股份有限公司

PDF上传者：深圳市福田区吉富昌电子商行

SUNMATE
1N5930A

SILICONZENERDIODES

文件：95.56 Kbytes Page：2 Pages

EIC

EIC

EIC
1N5930AE3/TR13

封装/外壳：DO-204AL，DO-41，轴向 包装：卷带（TR） 描述：DIODE ZENER 16V 1.5W DO204AL 分立半导体产品 二极管 - 齐纳 - 单

MicrochipMicrochip Technology Inc.

微芯科技微芯科技股份有限公司

Microchip
1N5930AG

封装/外壳：DO-204AL，DO-41，轴向 包装：卷带（TR） 描述：DIODE ZENER 16V 1.25W DO204AL 分立半导体产品 二极管 - 齐纳 - 单

MicrosemiMicrosemi Corporation

美高森美美高森美公司

Microsemi
1N5930B

ZENERDIODES

文件：53.8 Kbytes Page：1 Pages

CentralCentral Semiconductor Corp

美国中央半导体

Central
1N5930B

GLASSPASSIVATEDJUNCTIONSILICONZENERDIODES

文件：49.4 Kbytes Page：4 Pages

PANJITPANJIT International Inc.

强茂強茂股份有限公司

PANJIT
1N5930BUR-1

METALLURGICALLYBONDEDGLASSSURFACEMOUNT1.5WATTZENERS

文件：191.98 Kbytes Page：3 Pages

MicrosemiMicrosemi Corporation

美高森美美高森美公司

Microsemi

1N5930产品属性

  • 类型

    描述

  • 型号

    1N5930

  • 制造商

    TAYCHIPST

  • 制造商全称

    Shenzhen Taychipst Electronic Co., Ltd

  • 功能描述

    ZENER DIODES

1N5930供应商更多...

更新时间：2024-6-7 18:29:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
深圳市威雅利发展有限公司
1N5930B
ON
0447+
DO-15
610
一级代理,专注军工、汽车、医疗、工业、新能源、电力
询价
深圳市科芯源微电子有限公司
1N5930A稳压(齐纳)二极管
ON/安森美
24+
DO-15
98000
全新原厂原装正品现货,可提供技术支持、样品免费!
询价
深圳市航宇科工半导体有限公司
1N5930
CHINA
22+
DO-35
640
航宇科工半导体-央企合格优秀供方!
询价
瀚佳科技(深圳)有限公司
1N5930B
VISHAY
21+
DO-41
53200
一级代理/放心采购
询价
深圳市得捷芯城科技有限公司
1N5930B
SUNMATE/森美特
23+
NA/
23655
优势代理渠道,原装正品,可全系列订货开增值税票
询价
深圳市科恒伟业电子有限公司
1N5930B
ON
22+
DO-15
9800
只做原装正品假一赔十!正规渠道订货!
询价
中天科工半导体（深圳）有限公司
1N5930B
PANJIT
20+
DO-201AE
36800
原装优势主营型号-可开原型号增税票
询价
深圳市诚利顺电子科技有限公司
1N5930B
VISHAY
23+
DO-41
120000
十七年VIP会员,诚信经营，一手货源，原装正品可零售！
询价
深圳市明嘉莱科技有限公司
1N5930DUR-1E3
MICROSEMI
22+
SMD
518000
明嘉莱只做原装正品现货
询价
深圳市华斯顿科技有限公司
1N5930
VISHAYMAS
22+23+
DO-15
25111
绝对原装正品现货,全新深圳原装进口现货
询价

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