封装/外壳：轴向 包装：散装 描述：DIODE GEN PURP 150V 2.5A AXIAL 分立半导体产品 二极管 - 整流器 - 单

2.5 AMPS FAST RECOVERY RECTIFIER CHIP 50 - 150 VOLTS

FEATURES: • Chip Outline Dimensions: 41 x 41 mils • Chip Thickness: 8 to 12 mils • Anode Metallization: Aluminum • Metallization Thickness: 50,000Ã Nominal • Bonding Area: 23 x 23 mils Min. • Back Metallization: Gold • Junction Passivated with Thermal Silicon Dioxide - Planar Design • Back

HERMETIC AXIAL / MELF LEAD RECTIFIER

Ultrafast Recovery Rectifier • Hermetic, non-cavity glass package • Metallurgically bonded • Operating and Storage Temperature: -65°C to +175°C

RECTIFIER, up to 150V, 2.5A, 25ns

AXIAL LEADED HERMETICALLY SEALED SUPERFAST RECTIFIER DIODE • Very low revserse recovery time • Hermetical sealed in Metoxilite fused metal oxide • Low swiching losses • Soft, non-snap off, recovery characteristics • Very low forward voltage drop

Ultrafast Recovery Rectifier

Ultrafast Recovery Rectifier • Hermetic, non-cavity glass package • Metallurgically bonded • Operating and Storage Temperature: -65°C to +175°C

ULTRA FAST MILITARY RECTIFIERS

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