This specification covers the performance requirements for silicon, general purpose,

[AMSC] Scope. This specification covers the performance requirements for silicon, general purpose, semiconductor diodes. Four levels of product assurance are provided for each encapsulated device type as specified in MIL-PRF-19500. Two levels of product assurance are provided for each unencaps

HIGH CURRENT AXIAL LEAD RECTIFIERS : 200-1000 VOLT, 3.0 AMP, 2000 NANOSECOND RECTIFIER

DESCRIPTION: 200-1000 VOLT, 3.0 AMP, 2000 NANOSECOND RECTIFIER

VOIDLESS HERMITICALLY SEALED SURFACE MOUNT STANDARD RECOVERY GLASS RECTIFIERS

DESCRIPTION This “standard recovery” surface mount rectifier diode series is military qualified to MIL-PRF-19500/420 and is ideal for high-reliability applications where a failure cannot be tolerated. These industry-recognized 5.0 Amp rated rectifiers for working peak reverse voltages from 200 to

Surface Mount Hermetically Sealed Standard Recovery Rectifier Diode

Description Quick reference data VR = 200 - 1000V IF = 5.0A trr = 2µS VF = 1.0V Features ◆ Low reverse leakage current ◆ Hermetically sealed in fused metal oxide ◆ Good thermal shock resistance ◆ Low forward voltage drop ◆ Avalanche capability These products are qualified t

封装/外壳：SQ-MELF 包装：散装 描述：DIODE GEN PURP 400V 5A 分立半导体产品 二极管 - 整流器 - 单

封装/外壳：SQ-MELF，B 包装：管件 描述：DIODE GEN PURP 400V 3A D5B 分立半导体产品 二极管 - 整流器 - 单

Diode and Rectifier Devices

Surface Mount Hermetically Sealed Standard Recovery Rectifier Diode

HIGH CURRENT AXIAL LEAD RECTIFIERS

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Axial Leaded Hermetically Sealed Standard Recovery Rectifier Diode

Description Quick reference data VR = 200 - 1000V IF = 5.0A trr = 2µS VF = 1.0V Features ◆ Low reverse leakage current ◆ Hermetically sealed in fused metal oxide ◆ Good thermal shock resistance ◆ Low forward voltage drop ◆ Avalanche capability These products are qualifi

This specification covers the performance requirements for silicon, general purpose,

[AMSC] Scope. This specification covers the performance requirements for silicon, general purpose, semiconductor diodes. Four levels of product assurance are provided for each encapsulated device type as specified in MIL-PRF-19500. Two levels of product assurance are provided for each unencaps

HIGH CURRENT AXIAL LEAD RECTIFIERS : 200-1000 VOLT, 3.0 AMP, 2000 NANOSECOND RECTIFIER

DESCRIPTION: 200-1000 VOLT, 3.0 AMP, 2000 NANOSECOND RECTIFIER

GLASS PASSIVATED JUNCTION RECTIFIER

Reverse Voltage - 200 to 1000 Volts Forward Current - 3.0 Amperes FEATURES ♦ Glass passivated cavity-free junction ♦ High temperature metallurgically bonded construction ♦ Hermetically sealed package ♦ Capable of meeting environmental standards of MIL-S-19500 ♦ Medium switching f

RECTIFIERS

FEATURES • Voidless hermetically sealed glass package. • Triple layer passivation. • Metallurgical bonded. • JAN/TX/TXV available per MIL-PRF-19500/420.

Diode and Rectifier Devices