型号 功能描述 生产厂家&企业 LOGO 操作
1N5530D

0.4WLOWVOLTAGEAVALANCHEDIODES

FEATURES *Lowzenernoisespecified *Lowzenerimpedance *Lowleakagecurrent *Hermeticallysealedglasspackage

JGDJinan Gude Electronic Device

济南固锝电子济南固锝电子器件有限公司

JGD
1N5530D

LEADLESSPACKAGEFORSURFACEMOUNTZENERDIODE,500mW

•1N5518BUR-1THRU1N5546BUR-1AVAILABLEINJAN,JANTXANDJANTXVPERMIL-PRF-19500/437 •ZENERDIODE,500mW •LEADLESSPACKAGEFORSURFACEMOUNT •LOWREVERSELEAKAGECHARACTERISTICS •METALLURGICALLYBONDED

MicrosemiMicrosemi Corporation

美高森美美高森美公司

Microsemi

LEADLESSPACKAGEFORSURFACEMOUNTZENERDIODE,500mW

•1N5518BUR-1THRU1N5546BUR-1AVAILABLEINJAN,JANTXANDJANTXVPERMIL-PRF-19500/437 •ZENERDIODE,500mW •LEADLESSPACKAGEFORSURFACEMOUNT •LOWREVERSELEAKAGECHARACTERISTICS •METALLURGICALLYBONDED

MicrosemiMicrosemi Corporation

美高森美美高森美公司

Microsemi

0.4WLOWVOLTAGEAVALANCHEDIODES

FEATURES *Lowzenernoisespecified *Lowzenerimpedance *Lowleakagecurrent *Hermeticallysealedglasspackage

JGDJinan Gude Electronic Device

济南固锝电子济南固锝电子器件有限公司

JGD

LOWVOLTAGEAVALANCHEZENERDIODESHIGHPERFORMANCE:LOWNOISE,LOWLEAKAGE

LOWVOLTAGEAVALANCHEZENERDIODES HIGHPERFORMANCE:LOWNOISE,LOWLEAKAGE 1.PackageStyleDO-7 2.SuffixdenotesVztolerance:nonsuffix±20,Asuffix±10:Ir@Vr1,Vz,+Vfonly.SuffixB±5:Ir@Vr2,Vz,DVz,Vf,ND. 3.Measuredwith10,60HzACsuperimposedonIzt. 4.Measuredfrom

KNOXKnox Semiconductor, Inc

Knox Semiconductor, Inc

KNOX

LowVoltageAvalanche500mWZenerDiodesDO-35

FEATURES •LOWZENERNOISESPECIFIED •LOWZENERIMPEDANCE •LOWLEAKAGECURRENT •HERMETICALLYSEALEDGLASSPACKAGE •JAN/JANTX/JANTXVAVAILIBLEON1N5518-1TROUGH1N5546-1PERMIL-S-19500/437

MicrosemiMicrosemi Corporation

美高森美美高森美公司

Microsemi

0.4WLOWVOLTAGEAVALANCHEDIODES

FEATURES *Lowzenernoisespecified *Lowzenerimpedance *Lowleakagecurrent *Hermeticallysealedglasspackage

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体产品股份有限公司

NJSEMI

LEADLESSPACKAGEFORSURFACEMOUNTZENERDIODE,500mW

•1N5518BUR-1THRU1N5546BUR-1AVAILABLEINJAN,JANTXANDJANTXVPERMIL-PRF-19500/437 •ZENERDIODE,500mW •LEADLESSPACKAGEFORSURFACEMOUNT •LOWREVERSELEAKAGECHARACTERISTICS •METALLURGICALLYBONDED

MicrosemiMicrosemi Corporation

美高森美美高森美公司

Microsemi

LowVoltageSurfaceMount500mWAvalancheDiodes

•1N5518BUR-1THRU1N5546BUR-1AVAILABLEINJAN,JANTXANDJANTXVPERMIL-PRF-19500/437 •ZENERDIODE,500mW •LEADLESSPACKAGEFORSURFACEMOUNT •LOWREVERSELEAKAGECHARACTERISTICS •METALLURGICALLYBONDED

MicrosemiMicrosemi Corporation

美高森美美高森美公司

Microsemi

LEADLESSPACKAGEFORSURFACEMOUNTZENERDIODE,500mW

•1N5518BUR-1THRU1N5546BUR-1AVAILABLEINJAN,JANTXANDJANTXVPERMIL-PRF-19500/437 •ZENERDIODE,500mW •LEADLESSPACKAGEFORSURFACEMOUNT •LOWREVERSELEAKAGECHARACTERISTICS •METALLURGICALLYBONDED

MicrosemiMicrosemi Corporation

美高森美美高森美公司

Microsemi

LEADLESSPACKAGEFORSURFACEMOUNTZENERDIODE,500mW

•1N5518BUR-1THRU1N5546BUR-1AVAILABLEINJAN,JANTXANDJANTXVPERMIL-PRF-19500/437 •ZENERDIODE,500mW •LEADLESSPACKAGEFORSURFACEMOUNT •LOWREVERSELEAKAGECHARACTERISTICS •METALLURGICALLYBONDED

MicrosemiMicrosemi Corporation

美高森美美高森美公司

Microsemi

封装/外壳:DO-213AA 包装:卷带(TR) 描述:VOLTAGE REGULATOR 分立半导体产品 二极管 - 齐纳 - 单

MicrochipMicrochip Technology Inc.

微芯科技微芯科技股份有限公司

Microchip

封装/外壳:DO-213AA 包装:卷带(TR) 描述:VOLTAGE REGULATOR 分立半导体产品 二极管 - 齐纳 - 单

MicrochipMicrochip Technology Inc.

微芯科技微芯科技股份有限公司

Microchip

1N5530D产品属性

  • 类型

    描述

  • 型号

    1N5530D

  • 制造商

    MICROSEMI

  • 制造商全称

    Microsemi Corporation

  • 功能描述

    LEADLESS PACKAGE FOR SURFACE MOUNT ZENER DIODE, 500mW

更新时间:2024-5-12 23:00:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
MICROCHIP(美国微芯)
23+
DO35(DO204AH)
7350
现货供应,当天可交货!免费送样,原厂技术支持!!!
9947
2
公司优势库存 热卖中!
MICROCHIP-微芯
24+25+/26+27+
DO-35-2
9328
一一有问必回一特殊渠道一有长期订货一备货HK仓库
MSC
2007/2008
101
公司现货
MICROCHIP
23+
7300
专注配单,只做原装进口现货
MICROSEMI
2018+
SMD
1680
MICROSEMI专营品牌进口原装现货假一赔十
DO
2021+
Microsemi
5000
原厂授权代理,海外优势订货渠道。可提供大量库存,详
Microsemi
2023+
16800
芯为科技只做原装
CDI-DIODE
23+
原厂原包
19960
只做进口原装 终端工厂免费送样
MICROCHIP
23+
7300
专注配单,只做原装进口现货

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