位置：首页 > IC中文资料第9825页 > 1N5529BUR
| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
1N5529BUR | LowVoltageSurfaceMount500mWAvalancheDiodes •1N5518BUR-1THRU1N5546BUR-1AVAILABLEINJAN,JANTXANDJANTXVPERMIL-PRF-19500/437 •ZENERDIODE,500mW •LEADLESSPACKAGEFORSURFACEMOUNT •LOWREVERSELEAKAGECHARACTERISTICS •METALLURGICALLYBONDED | MicrosemiMicrosemi Corporation 美高森美美高森美公司 |  |   |
1N5529BUR | LEADLESSPACKAGEFORSURFACEMOUNTZENERDIODE,500mW •1N5518BUR-1THRU1N5546BUR-1AVAILABLEINJAN,JANTXANDJANTXVPERMIL-PRF-19500/437 •ZENERDIODE,500mW •LEADLESSPACKAGEFORSURFACEMOUNT •LOWREVERSELEAKAGECHARACTERISTICS •METALLURGICALLYBONDED | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | | |
LowVoltageAvalanche500mWZenerDiodesDO-35 FEATURES •LOWZENERNOISESPECIFIED •LOWZENERIMPEDANCE •LOWLEAKAGECURRENT •HERMETICALLYSEALEDGLASSPACKAGE •JAN/JANTX/JANTXVAVAILIBLEON1N5518-1TROUGH1N5546-1PERMIL-S-19500/437 | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | | | |
0.4WLOWVOLTAGEAVALANCHEDIODES FEATURES *Lowzenernoisespecified *Lowzenerimpedance *Lowleakagecurrent *Hermeticallysealedglasspackage | JGDJinan Gude Electronic Device 济南固锝电子济南固锝电子器件有限公司 |  | | |
LOWVOLTAGEAVALANCHEZENERDIODESHIGHPERFORMANCE:LOWNOISE,LOWLEAKAGE LOWVOLTAGEAVALANCHEZENERDIODES HIGHPERFORMANCE:LOWNOISE,LOWLEAKAGE 1.PackageStyleDO-7 2.SuffixdenotesVztolerance:nonsuffix±20,Asuffix±10:Ir@Vr1,Vz,+Vfonly.SuffixB±5:Ir@Vr2,Vz,DVz,Vf,ND. 3.Measuredwith10,60HzACsuperimposedonIzt. 4.Measuredfrom | KNOXKnox Semiconductor, Inc Knox Semiconductor, Inc |  | | |
LOWVOLTAGEAVALANCHEDIODESDO-35 FEATURES •LOWZENERNOISESPECIFIED •LOWZENERIMPEDANCE •LOWLEAKAGECURRENT •HERMETICALLYSEALEDGLASSPACKAGE •JAN/JANTX/JANTXVAVAILIBLEON1N5518-1TROUGH1N5546-1PERMIL-S-19500/437 | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | | | |
LEADLESSPACKAGEFORSURFACEMOUNTZENERDIODE,500mW •1N5518BUR-1THRU1N5546BUR-1AVAILABLEINJAN,JANTXANDJANTXVPERMIL-PRF-19500/437 •ZENERDIODE,500mW •LEADLESSPACKAGEFORSURFACEMOUNT •LOWREVERSELEAKAGECHARACTERISTICS •METALLURGICALLYBONDED | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | | | |
LEADLESSPACKAGEFORSURFACEMOUNTZENERDIODE,500mW •1N5518BUR-1THRU1N5546BUR-1AVAILABLEINJAN,JANTXANDJANTXVPERMIL-PRF-19500/437 •ZENERDIODE,500mW •LEADLESSPACKAGEFORSURFACEMOUNT •LOWREVERSELEAKAGECHARACTERISTICS •METALLURGICALLYBONDED | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | | | |
ZENERDIODE,500mW 文件：111.15 Kbytes Page：2 Pages | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | | | |
包装：散装 描述：DIODE ZENER 分立半导体产品 二极管 - 齐纳 - 单 | MicrochipMicrochip Technology Inc. 微芯科技微芯科技股份有限公司 |  | | |
封装/外壳：DO-213AA 包装：卷带（TR） 描述：DIODE ZENER 9.1V 500MW DO213AA 分立半导体产品 二极管 - 齐纳 - 单 | MicrochipMicrochip Technology Inc. 微芯科技微芯科技股份有限公司 | | |
1N5529BUR产品属性
- 类型
描述
- 型号
1N5529BUR
- 制造商
MICROSEMI
- 制造商全称
Microsemi Corporation
- 功能描述
LEADLESS PACKAGE FOR SURFACE MOUNT ZENER DIODE, 500mW
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
MSC |
48 |
公司优势库存 热卖中!!! |
|||||
MICROCHIP-微芯 |
24+25+/26+27+ |
DO-35-2 |
6328 |
一一有问必回一特殊渠道一有长期订货一备货HK仓库 |
|||
MICR0SEMI |
专业军工 |
NA |
1000 |
只做原装正品军工级部分订货 |
|||
MICR0SEMI |
专业军工 |
NA |
1000 |
只做原装正品 |
|||
MSC |
2007/2008 |
40 |
公司现货 |
||||
MICROSEMI |
2306+ |
MODULE |
514 |
优势代理渠道,原装现货,可全系列订货 |
|||
MICROSEMI |
2018+ |
SMD |
1680 |
MICROSEMI专营品牌进口原装现货假一赔十 |
|||
MICR0SEMI |
三年内 |
1983 |
纳立只做原装正品13590203865 |
||||
MICROSEMI |
23+ |
7600 |
专注配单,只做原装进口现货 |
||||
MICROSEMI |
23+ |
7600 |
专注配单,只做原装进口现货 |
1N5529BUR芯片相关品牌
1N5529BUR规格书下载地址
1N5529BUR参数引脚图相关
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1N5529BUR数据表相关新闻
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DdatasheetPDF页码索引
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