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位置：首页 > IC中文资料第7303页 > 1N5521

型号 功能描述 生产厂家 企业 LOGO 操作
1N5521

0.4W LOW VOLTAGE AVALANCHE DIODES

FEATURES * Low zener noise specified * Low zener impedance * Low leakage current * Hermetically sealed glass package

JGD

固锝电子

1N5521

LOW VOLTAGE AVALANCHE DIODES DO-35

FEATURES • LOW ZENER NOISE SPECIFIED • LOW ZENER IMPEDANCE • LOW LEAKAGE CURRENT • HERMETICALLY SEALED GLASS PACKAGE • JAN/JANTX/JANTXV AVAILIBLE ON 1N5518-1 TROUGH 1N5546-1 PER MIL-S-19500/437

Microsemi

美高森美

1N5521

LOW VOLTAGE AVALANCHE ZENER DIODES HIGH PERFORMANCE: LOW NOISE, LOW LEAKAGE

LOW VOLTAGE AVALANCHE ZENER DIODES HIGH PERFORMANCE: LOW NOISE, LOW LEAKAGE 1. Package Style DO-7 2. Suffix denotes Vz tolerance: non suffix ±20, A suffix ±10: Ir @ Vr1, Vz, + Vf only. Suffix B ±5: Ir @ Vr2, Vz, DVz, Vf, ND. 3. Measured with 10, 60 Hz AC superimposed on Izt. 4. Measured from

KNOX

1N5521

LEADLESS PACKAGE FOR SURFACE MOUNT ZENER DIODE, 500mW

• 1N5518BUR-1 THRU 1N5546BUR-1 AVAILABLE IN JAN, JANTX AND JANTXV PER MIL-PRF-19500/437 • ZENER DIODE, 500mW • LEADLESS PACKAGE FOR SURFACE MOUNT • LOW REVERSE LEAKAGE CHARACTERISTICS • METALLURGICALLY BONDED

Microsemi

美高森美

1N5521

Low Voltage Avalanche 500 mW Zener Diodes DO-35

FEATURES • LOW ZENER NOISE SPECIFIED • LOW ZENER IMPEDANCE • LOW LEAKAGE CURRENT • HERMETICALLY SEALED GLASS PACKAGE • JAN/JANTX/JANTXV AVAILIBLE ON 1N5518-1 TROUGH 1N5546-1 PER MIL-S-19500/437

Microsemi

美高森美

1N5521

0.4W LOW VOLTAGE AVALANCHE DIODES

FEATURES * Low zener noise specified * Low zener impedance * Low leakage current * Hermetically sealed glass package

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

1N5521

SCHOTTKY RECTIERS SILICON RECTIFIER DIODES

文件：48.9 Kbytes Page：1 Pages

ETC1List of Unclassifed Manufacturers

etc未分类制造商未分类制造商

1N5521

封装/外壳：DO-204AH，DO-35，轴向 包装：卷带（TR） 描述：VOLTAGE REGULATOR 分立半导体产品 二极管 - 齐纳 - 单

Microchip

微芯科技

1N5521

Zener Diodes

Microchip

微芯科技

1N5521-1

LEADLESS PACKAGE FOR SURFACE MOUNT ZENER DIODE, 500mW

• 1N5518BUR-1 THRU 1N5546BUR-1 AVAILABLE IN JAN, JANTX AND JANTXV PER MIL-PRF-19500/437 • ZENER DIODE, 500mW • LEADLESS PACKAGE FOR SURFACE MOUNT • LOW REVERSE LEAKAGE CHARACTERISTICS • METALLURGICALLY BONDED

Microsemi

美高森美

1N5521A

LEADLESS PACKAGE FOR SURFACE MOUNT ZENER DIODE, 500mW

• 1N5518BUR-1 THRU 1N5546BUR-1 AVAILABLE IN JAN, JANTX AND JANTXV PER MIL-PRF-19500/437 • ZENER DIODE, 500mW • LEADLESS PACKAGE FOR SURFACE MOUNT • LOW REVERSE LEAKAGE CHARACTERISTICS • METALLURGICALLY BONDED

Microsemi

美高森美

1N5521A

LOW VOLTAGE AVALANCHES SILICON OXIDE PASSIVATED ZENER REGULATOR DIODES

LOW VOLTAGE AVALANCHES SILICON OXIDE PASSIVATED ZENER REGULATOR DIODES LOW VOLTAGE AVALANCHE ZENER DIODES 400 MILLIWATTS 3.3 THRU 33 VOLTS

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

1N5521A

0.4W LOW VOLTAGE AVALANCHE DIODES

FEATURES * Low zener noise specified * Low zener impedance * Low leakage current * Hermetically sealed glass package

JGD

固锝电子

1N5521A-1

LEADLESS PACKAGE FOR SURFACE MOUNT ZENER DIODE, 500mW

• 1N5518BUR-1 THRU 1N5546BUR-1 AVAILABLE IN JAN, JANTX AND JANTXV PER MIL-PRF-19500/437 • ZENER DIODE, 500mW • LEADLESS PACKAGE FOR SURFACE MOUNT • LOW REVERSE LEAKAGE CHARACTERISTICS • METALLURGICALLY BONDED

Microsemi

美高森美

1N5521AUR

LEADLESS PACKAGE FOR SURFACE MOUNT ZENER DIODE, 500mW

• 1N5518BUR-1 THRU 1N5546BUR-1 AVAILABLE IN JAN, JANTX AND JANTXV PER MIL-PRF-19500/437 • ZENER DIODE, 500mW • LEADLESS PACKAGE FOR SURFACE MOUNT • LOW REVERSE LEAKAGE CHARACTERISTICS • METALLURGICALLY BONDED

Microsemi

美高森美

1N5521AUR-1

LEADLESS PACKAGE FOR SURFACE MOUNT ZENER DIODE, 500mW

• 1N5518BUR-1 THRU 1N5546BUR-1 AVAILABLE IN JAN, JANTX AND JANTXV PER MIL-PRF-19500/437 • ZENER DIODE, 500mW • LEADLESS PACKAGE FOR SURFACE MOUNT • LOW REVERSE LEAKAGE CHARACTERISTICS • METALLURGICALLY BONDED

Microsemi

美高森美

1N5521B

0.4W LOW VOLTAGE AVALANCHE DIODES

FEATURES * Low zener noise specified * Low zener impedance * Low leakage current * Hermetically sealed glass package

JGD

固锝电子

1N5521B

LOW REVERSE LEAKAGE CHARACTERISTICS

• 1N5518-1 THRU 1N5546B-1 AVAILABLE IN JAN, JANTX AND JANTXV PER MIL-PRF-19500/437 • LOW REVERSE LEAKAGE CHARACTERISTICS • LOW NOISE CHARACTERISTICS • DOUBLE PLUG CONSTRUCTION • METALLURGICALLYBONDED

CDI-DIODE

1N5521B

LEADLESS PACKAGE FOR SURFACE MOUNT ZENER DIODE, 500mW

• 1N5518BUR-1 THRU 1N5546BUR-1 AVAILABLE IN JAN, JANTX AND JANTXV PER MIL-PRF-19500/437 • ZENER DIODE, 500mW • LEADLESS PACKAGE FOR SURFACE MOUNT • LOW REVERSE LEAKAGE CHARACTERISTICS • METALLURGICALLY BONDED

Microsemi

美高森美

1N5521B

0.5W Zener Diode

Features  Sharp Reverse Characteristics  Low Reverse Current Levels  High Reliability Gold Back Metal  High Reliability Tested Grades.

SS

1N5521B-1

LOW REVERSE LEAKAGE CHARACTERISTICS

• 1N5518-1 THRU 1N5546B-1 AVAILABLE IN JAN, JANTX AND JANTXV PER MIL-PRF-19500/437 • LOW REVERSE LEAKAGE CHARACTERISTICS • LOW NOISE CHARACTERISTICS • DOUBLE PLUG CONSTRUCTION • METALLURGICALLYBONDED

CDI-DIODE

1N5521B-1

LEADLESS PACKAGE FOR SURFACE MOUNT ZENER DIODE, 500mW

• 1N5518BUR-1 THRU 1N5546BUR-1 AVAILABLE IN JAN, JANTX AND JANTXV PER MIL-PRF-19500/437 • ZENER DIODE, 500mW • LEADLESS PACKAGE FOR SURFACE MOUNT • LOW REVERSE LEAKAGE CHARACTERISTICS • METALLURGICALLY BONDED

Microsemi

美高森美

1N5521BUR

LEADLESS PACKAGE FOR SURFACE MOUNT ZENER DIODE, 500mW

• 1N5518BUR-1 THRU 1N5546BUR-1 AVAILABLE IN JAN, JANTX AND JANTXV PER MIL-PRF-19500/437 • ZENER DIODE, 500mW • LEADLESS PACKAGE FOR SURFACE MOUNT • LOW REVERSE LEAKAGE CHARACTERISTICS • METALLURGICALLY BONDED

Microsemi

美高森美

1N5521BUR

Low Voltage Surface Mount 500 mW Avalanche Diodes

• 1N5518BUR-1 THRU 1N5546BUR-1 AVAILABLE IN JAN, JANTX AND JANTXV PER MIL-PRF-19500/437 • ZENER DIODE, 500mW • LEADLESS PACKAGE FOR SURFACE MOUNT • LOW REVERSE LEAKAGE CHARACTERISTICS • METALLURGICALLY BONDED

Microsemi

美高森美

1N5521BUR-1

LEADLESS PACKAGE FOR SURFACE MOUNT ZENER DIODE, 500mW

• 1N5518BUR-1 THRU 1N5546BUR-1 AVAILABLE IN JAN, JANTX AND JANTXV PER MIL-PRF-19500/437 • ZENER DIODE, 500mW • LEADLESS PACKAGE FOR SURFACE MOUNT • LOW REVERSE LEAKAGE CHARACTERISTICS • METALLURGICALLY BONDED

Microsemi

美高森美

1N5521C

LEADLESS PACKAGE FOR SURFACE MOUNT ZENER DIODE, 500mW

• 1N5518BUR-1 THRU 1N5546BUR-1 AVAILABLE IN JAN, JANTX AND JANTXV PER MIL-PRF-19500/437 • ZENER DIODE, 500mW • LEADLESS PACKAGE FOR SURFACE MOUNT • LOW REVERSE LEAKAGE CHARACTERISTICS • METALLURGICALLY BONDED

Microsemi

美高森美

1N5521C

0.4W LOW VOLTAGE AVALANCHE DIODES

FEATURES * Low zener noise specified * Low zener impedance * Low leakage current * Hermetically sealed glass package

JGD

固锝电子

1N5521C-1

LEADLESS PACKAGE FOR SURFACE MOUNT ZENER DIODE, 500mW

• 1N5518BUR-1 THRU 1N5546BUR-1 AVAILABLE IN JAN, JANTX AND JANTXV PER MIL-PRF-19500/437 • ZENER DIODE, 500mW • LEADLESS PACKAGE FOR SURFACE MOUNT • LOW REVERSE LEAKAGE CHARACTERISTICS • METALLURGICALLY BONDED

Microsemi

美高森美

1N5521CUR

Low Voltage Surface Mount 500 mW Avalanche Diodes

• 1N5518BUR-1 THRU 1N5546BUR-1 AVAILABLE IN JAN, JANTX AND JANTXV PER MIL-PRF-19500/437 • ZENER DIODE, 500mW • LEADLESS PACKAGE FOR SURFACE MOUNT • LOW REVERSE LEAKAGE CHARACTERISTICS • METALLURGICALLY BONDED

Microsemi

美高森美

1N5521CUR

LEADLESS PACKAGE FOR SURFACE MOUNT ZENER DIODE, 500mW

• 1N5518BUR-1 THRU 1N5546BUR-1 AVAILABLE IN JAN, JANTX AND JANTXV PER MIL-PRF-19500/437 • ZENER DIODE, 500mW • LEADLESS PACKAGE FOR SURFACE MOUNT • LOW REVERSE LEAKAGE CHARACTERISTICS • METALLURGICALLY BONDED

Microsemi

美高森美

1N5521CUR-1

LEADLESS PACKAGE FOR SURFACE MOUNT ZENER DIODE, 500mW

• 1N5518BUR-1 THRU 1N5546BUR-1 AVAILABLE IN JAN, JANTX AND JANTXV PER MIL-PRF-19500/437 • ZENER DIODE, 500mW • LEADLESS PACKAGE FOR SURFACE MOUNT • LOW REVERSE LEAKAGE CHARACTERISTICS • METALLURGICALLY BONDED

Microsemi

美高森美

1N5521D

0.4W LOW VOLTAGE AVALANCHE DIODES

FEATURES * Low zener noise specified * Low zener impedance * Low leakage current * Hermetically sealed glass package

JGD

固锝电子

1N5521D

LEADLESS PACKAGE FOR SURFACE MOUNT ZENER DIODE, 500mW

• 1N5518BUR-1 THRU 1N5546BUR-1 AVAILABLE IN JAN, JANTX AND JANTXV PER MIL-PRF-19500/437 • ZENER DIODE, 500mW • LEADLESS PACKAGE FOR SURFACE MOUNT • LOW REVERSE LEAKAGE CHARACTERISTICS • METALLURGICALLY BONDED

Microsemi

美高森美

1N5521D-1

LEADLESS PACKAGE FOR SURFACE MOUNT ZENER DIODE, 500mW

• 1N5518BUR-1 THRU 1N5546BUR-1 AVAILABLE IN JAN, JANTX AND JANTXV PER MIL-PRF-19500/437 • ZENER DIODE, 500mW • LEADLESS PACKAGE FOR SURFACE MOUNT • LOW REVERSE LEAKAGE CHARACTERISTICS • METALLURGICALLY BONDED

Microsemi

美高森美

1N5521DUR

Low Voltage Surface Mount 500 mW Avalanche Diodes

• 1N5518BUR-1 THRU 1N5546BUR-1 AVAILABLE IN JAN, JANTX AND JANTXV PER MIL-PRF-19500/437 • ZENER DIODE, 500mW • LEADLESS PACKAGE FOR SURFACE MOUNT • LOW REVERSE LEAKAGE CHARACTERISTICS • METALLURGICALLY BONDED

Microsemi

美高森美

1N5521DUR

LEADLESS PACKAGE FOR SURFACE MOUNT ZENER DIODE, 500mW

• 1N5518BUR-1 THRU 1N5546BUR-1 AVAILABLE IN JAN, JANTX AND JANTXV PER MIL-PRF-19500/437 • ZENER DIODE, 500mW • LEADLESS PACKAGE FOR SURFACE MOUNT • LOW REVERSE LEAKAGE CHARACTERISTICS • METALLURGICALLY BONDED

Microsemi

美高森美

1N5521DUR-1

LEADLESS PACKAGE FOR SURFACE MOUNT ZENER DIODE, 500mW

• 1N5518BUR-1 THRU 1N5546BUR-1 AVAILABLE IN JAN, JANTX AND JANTXV PER MIL-PRF-19500/437 • ZENER DIODE, 500mW • LEADLESS PACKAGE FOR SURFACE MOUNT • LOW REVERSE LEAKAGE CHARACTERISTICS • METALLURGICALLY BONDED

Microsemi

美高森美

1N5521UR

Low Voltage Surface Mount 500 mW Avalanche Diodes

• 1N5518BUR-1 THRU 1N5546BUR-1 AVAILABLE IN JAN, JANTX AND JANTXV PER MIL-PRF-19500/437 • ZENER DIODE, 500mW • LEADLESS PACKAGE FOR SURFACE MOUNT • LOW REVERSE LEAKAGE CHARACTERISTICS • METALLURGICALLY BONDED

Microsemi

美高森美

1N5521UR

LEADLESS PACKAGE FOR SURFACE MOUNT ZENER DIODE, 500mW

• 1N5518BUR-1 THRU 1N5546BUR-1 AVAILABLE IN JAN, JANTX AND JANTXV PER MIL-PRF-19500/437 • ZENER DIODE, 500mW • LEADLESS PACKAGE FOR SURFACE MOUNT • LOW REVERSE LEAKAGE CHARACTERISTICS • METALLURGICALLY BONDED

Microsemi

美高森美

1N5521UR-1

LEADLESS PACKAGE FOR SURFACE MOUNT ZENER DIODE, 500mW

• 1N5518BUR-1 THRU 1N5546BUR-1 AVAILABLE IN JAN, JANTX AND JANTXV PER MIL-PRF-19500/437 • ZENER DIODE, 500mW • LEADLESS PACKAGE FOR SURFACE MOUNT • LOW REVERSE LEAKAGE CHARACTERISTICS • METALLURGICALLY BONDED

Microsemi

美高森美

1N5521A

封装/外壳：DO-204AH，DO-35，轴向 包装：散装 描述：VOLTAGE REGULATOR 分立半导体产品 二极管 - 齐纳 - 单

Microchip

微芯科技

1N5521AUR

0.5W 4.3V 10% Zener Diode

DIGITRON

1N5521AUR-HR

0.5W 4.3V 10% Zener Diode

DIGITRON

1N5521B

LOW REVERSE LEAKAGE CHARACTERISTICS

文件：114.68 Kbytes Page：2 Pages

Microsemi

美高森美

1N5521BUR-1

ZENER DIODE, 500mW

文件：111.15 Kbytes Page：2 Pages

Microsemi

美高森美

1N5521产品属性

  • 类型

    描述

  • 型号

    1N5521

  • 功能描述

    SCHOTTKY RECTIERS SILICON RECTIFIER DIODES

1N5521供应商更多...

更新时间：2025-10-8 11:20:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
深圳市科恒伟业电子有限公司
1N5521B
CODZ
23+
二极管
6850
只做原装正品假一赔十为客户做到零风险!!
询价
贸泽芯城（深圳）电子科技有限公司
1N5522BUR-1JANTX
-
23+
NA
5000
原厂授权代理,海外优势订货渠道。可提供大量库存,详
询价
现代芯城（深圳）科技有限公司
1N5522BUR-1
24+
N/A
73000
一级代理-主营优势-实惠价格-不悔选择
询价
深圳市威尔健半导体有限公司
1N5523B
APD
23+
50000
全新原装正品现货,支持订货
询价
深圳市芯为科技有限公司
1N5521B(DO35)
Microsemi
25+
电联咨询
7800
公司现货,提供拆样技术支持
询价
深圳市安富世纪电子有限公司
1N5521B
CODZ
23+
二极管
100
全新原装正品现货,支持订货
询价
深圳市达恩科技有限公司
1N5521B
CODZ
24+
2170
进口原装正品优势供应
询价
北京逸博微科技有限公司
1N5521B
CODZ
20+
管子
88
全新现货热卖中欢迎查询
询价
深圳市威雅利发展有限公司
1N5521B
CODZ
08+
二极管
100
一级代理,专注军工、汽车、医疗、工业、新能源、电力
询价
千层芯半导体(深圳)有限公司
1N5521B
CODZ
24+
SMD
18700
询价

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