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位置：首页 > IC中文资料第6384页 > 1N5520

型号 功能描述 生产厂家 企业 LOGO 操作
1N5520

LOW VOLTAGE AVALANCHE DIODES DO-35

FEATURES • LOW ZENER NOISE SPECIFIED • LOW ZENER IMPEDANCE • LOW LEAKAGE CURRENT • HERMETICALLY SEALED GLASS PACKAGE • JAN/JANTX/JANTXV AVAILIBLE ON 1N5518-1 TROUGH 1N5546-1 PER MIL-S-19500/437

Microsemi

美高森美

1N5520

LEADLESS PACKAGE FOR SURFACE MOUNT ZENER DIODE, 500mW

• 1N5518BUR-1 THRU 1N5546BUR-1 AVAILABLE IN JAN, JANTX AND JANTXV PER MIL-PRF-19500/437 • ZENER DIODE, 500mW • LEADLESS PACKAGE FOR SURFACE MOUNT • LOW REVERSE LEAKAGE CHARACTERISTICS • METALLURGICALLY BONDED

Microsemi

美高森美

1N5520

Low Voltage Avalanche 500 mW Zener Diodes DO-35

FEATURES • LOW ZENER NOISE SPECIFIED • LOW ZENER IMPEDANCE • LOW LEAKAGE CURRENT • HERMETICALLY SEALED GLASS PACKAGE • JAN/JANTX/JANTXV AVAILIBLE ON 1N5518-1 TROUGH 1N5546-1 PER MIL-S-19500/437

Microsemi

美高森美

1N5520

0.4W LOW VOLTAGE AVALANCHE DIODES

FEATURES * Low zener noise specified * Low zener impedance * Low leakage current * Hermetically sealed glass package

JGD

固锝电子

1N5520

LOW VOLTAGE AVALANCHE ZENER DIODES HIGH PERFORMANCE: LOW NOISE, LOW LEAKAGE

LOW VOLTAGE AVALANCHE ZENER DIODES HIGH PERFORMANCE: LOW NOISE, LOW LEAKAGE 1. Package Style DO-7 2. Suffix denotes Vz tolerance: non suffix ±20, A suffix ±10: Ir @ Vr1, Vz, + Vf only. Suffix B ±5: Ir @ Vr2, Vz, DVz, Vf, ND. 3. Measured with 10, 60 Hz AC superimposed on Izt. 4. Measured from

KNOX

1N5520

0.4W LOW VOLTAGE AVALANCHE DIODES

FEATURES * Low zener noise specified * Low zener impedance * Low leakage current * Hermetically sealed glass package

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

1N5520

SCHOTTKY RECTIERS SILICON RECTIFIER DIODES

文件：48.9 Kbytes Page：1 Pages

ETC1List of Unclassifed Manufacturers

etc未分类制造商未分类制造商

1N5520

Low Voltage Avalanche Zener

Microchip

微芯科技

1N5520

封装/外壳：DO-204AH，DO-35，轴向 包装：散装 描述：VOLTAGE REGULATOR 分立半导体产品 二极管 - 齐纳 - 单

Microchip

微芯科技

1N5520-1

LEADLESS PACKAGE FOR SURFACE MOUNT ZENER DIODE, 500mW

• 1N5518BUR-1 THRU 1N5546BUR-1 AVAILABLE IN JAN, JANTX AND JANTXV PER MIL-PRF-19500/437 • ZENER DIODE, 500mW • LEADLESS PACKAGE FOR SURFACE MOUNT • LOW REVERSE LEAKAGE CHARACTERISTICS • METALLURGICALLY BONDED

Microsemi

美高森美

1N5520A

LEADLESS PACKAGE FOR SURFACE MOUNT ZENER DIODE, 500mW

• 1N5518BUR-1 THRU 1N5546BUR-1 AVAILABLE IN JAN, JANTX AND JANTXV PER MIL-PRF-19500/437 • ZENER DIODE, 500mW • LEADLESS PACKAGE FOR SURFACE MOUNT • LOW REVERSE LEAKAGE CHARACTERISTICS • METALLURGICALLY BONDED

Microsemi

美高森美

1N5520A

0.4W LOW VOLTAGE AVALANCHE DIODES

FEATURES * Low zener noise specified * Low zener impedance * Low leakage current * Hermetically sealed glass package

JGD

固锝电子

1N5520A

LOW VOLTAGE AVALANCHES SILICON OXIDE PASSIVATED ZENER REGULATOR DIODES

LOW VOLTAGE AVALANCHES SILICON OXIDE PASSIVATED ZENER REGULATOR DIODES LOW VOLTAGE AVALANCHE ZENER DIODES 400 MILLIWATTS 3.3 THRU 33 VOLTS

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

1N5520A-1

LEADLESS PACKAGE FOR SURFACE MOUNT ZENER DIODE, 500mW

• 1N5518BUR-1 THRU 1N5546BUR-1 AVAILABLE IN JAN, JANTX AND JANTXV PER MIL-PRF-19500/437 • ZENER DIODE, 500mW • LEADLESS PACKAGE FOR SURFACE MOUNT • LOW REVERSE LEAKAGE CHARACTERISTICS • METALLURGICALLY BONDED

Microsemi

美高森美

1N5520AUR

LEADLESS PACKAGE FOR SURFACE MOUNT ZENER DIODE, 500mW

• 1N5518BUR-1 THRU 1N5546BUR-1 AVAILABLE IN JAN, JANTX AND JANTXV PER MIL-PRF-19500/437 • ZENER DIODE, 500mW • LEADLESS PACKAGE FOR SURFACE MOUNT • LOW REVERSE LEAKAGE CHARACTERISTICS • METALLURGICALLY BONDED

Microsemi

美高森美

1N5520AUR-1

LEADLESS PACKAGE FOR SURFACE MOUNT ZENER DIODE, 500mW

• 1N5518BUR-1 THRU 1N5546BUR-1 AVAILABLE IN JAN, JANTX AND JANTXV PER MIL-PRF-19500/437 • ZENER DIODE, 500mW • LEADLESS PACKAGE FOR SURFACE MOUNT • LOW REVERSE LEAKAGE CHARACTERISTICS • METALLURGICALLY BONDED

Microsemi

美高森美

1N5520B

LEADLESS PACKAGE FOR SURFACE MOUNT ZENER DIODE, 500mW

• 1N5518BUR-1 THRU 1N5546BUR-1 AVAILABLE IN JAN, JANTX AND JANTXV PER MIL-PRF-19500/437 • ZENER DIODE, 500mW • LEADLESS PACKAGE FOR SURFACE MOUNT • LOW REVERSE LEAKAGE CHARACTERISTICS • METALLURGICALLY BONDED

Microsemi

美高森美

1N5520B

0.4W LOW VOLTAGE AVALANCHE DIODES

FEATURES * Low zener noise specified * Low zener impedance * Low leakage current * Hermetically sealed glass package

JGD

固锝电子

1N5520B

LOW REVERSE LEAKAGE CHARACTERISTICS

• 1N5518-1 THRU 1N5546B-1 AVAILABLE IN JAN, JANTX AND JANTXV PER MIL-PRF-19500/437 • LOW REVERSE LEAKAGE CHARACTERISTICS • LOW NOISE CHARACTERISTICS • DOUBLE PLUG CONSTRUCTION • METALLURGICALLYBONDED

CDI-DIODE

1N5520B

0.5W Zener Diode

Features  Sharp Reverse Characteristics  Low Reverse Current Levels  High Reliability Gold Back Metal  High Reliability Tested Grades.

SS

1N5520B-1

LOW REVERSE LEAKAGE CHARACTERISTICS

• 1N5518-1 THRU 1N5546B-1 AVAILABLE IN JAN, JANTX AND JANTXV PER MIL-PRF-19500/437 • LOW REVERSE LEAKAGE CHARACTERISTICS • LOW NOISE CHARACTERISTICS • DOUBLE PLUG CONSTRUCTION • METALLURGICALLYBONDED

CDI-DIODE

1N5520B-1

LEADLESS PACKAGE FOR SURFACE MOUNT ZENER DIODE, 500mW

• 1N5518BUR-1 THRU 1N5546BUR-1 AVAILABLE IN JAN, JANTX AND JANTXV PER MIL-PRF-19500/437 • ZENER DIODE, 500mW • LEADLESS PACKAGE FOR SURFACE MOUNT • LOW REVERSE LEAKAGE CHARACTERISTICS • METALLURGICALLY BONDED

Microsemi

美高森美

1N5520BUR

Low Voltage Surface Mount 500 mW Avalanche Diodes

• 1N5518BUR-1 THRU 1N5546BUR-1 AVAILABLE IN JAN, JANTX AND JANTXV PER MIL-PRF-19500/437 • ZENER DIODE, 500mW • LEADLESS PACKAGE FOR SURFACE MOUNT • LOW REVERSE LEAKAGE CHARACTERISTICS • METALLURGICALLY BONDED

Microsemi

美高森美

1N5520BUR

LEADLESS PACKAGE FOR SURFACE MOUNT ZENER DIODE, 500mW

• 1N5518BUR-1 THRU 1N5546BUR-1 AVAILABLE IN JAN, JANTX AND JANTXV PER MIL-PRF-19500/437 • ZENER DIODE, 500mW • LEADLESS PACKAGE FOR SURFACE MOUNT • LOW REVERSE LEAKAGE CHARACTERISTICS • METALLURGICALLY BONDED

Microsemi

美高森美

1N5520BUR-1

LEADLESS PACKAGE FOR SURFACE MOUNT ZENER DIODE, 500mW

• 1N5518BUR-1 THRU 1N5546BUR-1 AVAILABLE IN JAN, JANTX AND JANTXV PER MIL-PRF-19500/437 • ZENER DIODE, 500mW • LEADLESS PACKAGE FOR SURFACE MOUNT • LOW REVERSE LEAKAGE CHARACTERISTICS • METALLURGICALLY BONDED

Microsemi

美高森美

1N5520C

LEADLESS PACKAGE FOR SURFACE MOUNT ZENER DIODE, 500mW

• 1N5518BUR-1 THRU 1N5546BUR-1 AVAILABLE IN JAN, JANTX AND JANTXV PER MIL-PRF-19500/437 • ZENER DIODE, 500mW • LEADLESS PACKAGE FOR SURFACE MOUNT • LOW REVERSE LEAKAGE CHARACTERISTICS • METALLURGICALLY BONDED

Microsemi

美高森美

1N5520C

0.4W LOW VOLTAGE AVALANCHE DIODES

FEATURES * Low zener noise specified * Low zener impedance * Low leakage current * Hermetically sealed glass package

JGD

固锝电子

1N5520C-1

LEADLESS PACKAGE FOR SURFACE MOUNT ZENER DIODE, 500mW

• 1N5518BUR-1 THRU 1N5546BUR-1 AVAILABLE IN JAN, JANTX AND JANTXV PER MIL-PRF-19500/437 • ZENER DIODE, 500mW • LEADLESS PACKAGE FOR SURFACE MOUNT • LOW REVERSE LEAKAGE CHARACTERISTICS • METALLURGICALLY BONDED

Microsemi

美高森美

1N5520CUR

Low Voltage Surface Mount 500 mW Avalanche Diodes

• 1N5518BUR-1 THRU 1N5546BUR-1 AVAILABLE IN JAN, JANTX AND JANTXV PER MIL-PRF-19500/437 • ZENER DIODE, 500mW • LEADLESS PACKAGE FOR SURFACE MOUNT • LOW REVERSE LEAKAGE CHARACTERISTICS • METALLURGICALLY BONDED

Microsemi

美高森美

1N5520CUR

LEADLESS PACKAGE FOR SURFACE MOUNT ZENER DIODE, 500mW

• 1N5518BUR-1 THRU 1N5546BUR-1 AVAILABLE IN JAN, JANTX AND JANTXV PER MIL-PRF-19500/437 • ZENER DIODE, 500mW • LEADLESS PACKAGE FOR SURFACE MOUNT • LOW REVERSE LEAKAGE CHARACTERISTICS • METALLURGICALLY BONDED

Microsemi

美高森美

1N5520CUR-1

LEADLESS PACKAGE FOR SURFACE MOUNT ZENER DIODE, 500mW

• 1N5518BUR-1 THRU 1N5546BUR-1 AVAILABLE IN JAN, JANTX AND JANTXV PER MIL-PRF-19500/437 • ZENER DIODE, 500mW • LEADLESS PACKAGE FOR SURFACE MOUNT • LOW REVERSE LEAKAGE CHARACTERISTICS • METALLURGICALLY BONDED

Microsemi

美高森美

1N5520D

LEADLESS PACKAGE FOR SURFACE MOUNT ZENER DIODE, 500mW

• 1N5518BUR-1 THRU 1N5546BUR-1 AVAILABLE IN JAN, JANTX AND JANTXV PER MIL-PRF-19500/437 • ZENER DIODE, 500mW • LEADLESS PACKAGE FOR SURFACE MOUNT • LOW REVERSE LEAKAGE CHARACTERISTICS • METALLURGICALLY BONDED

Microsemi

美高森美

1N5520D

0.4W LOW VOLTAGE AVALANCHE DIODES

FEATURES * Low zener noise specified * Low zener impedance * Low leakage current * Hermetically sealed glass package

JGD

固锝电子

1N5520D-1

LEADLESS PACKAGE FOR SURFACE MOUNT ZENER DIODE, 500mW

• 1N5518BUR-1 THRU 1N5546BUR-1 AVAILABLE IN JAN, JANTX AND JANTXV PER MIL-PRF-19500/437 • ZENER DIODE, 500mW • LEADLESS PACKAGE FOR SURFACE MOUNT • LOW REVERSE LEAKAGE CHARACTERISTICS • METALLURGICALLY BONDED

Microsemi

美高森美

1N5520DUR

Low Voltage Surface Mount 500 mW Avalanche Diodes

• 1N5518BUR-1 THRU 1N5546BUR-1 AVAILABLE IN JAN, JANTX AND JANTXV PER MIL-PRF-19500/437 • ZENER DIODE, 500mW • LEADLESS PACKAGE FOR SURFACE MOUNT • LOW REVERSE LEAKAGE CHARACTERISTICS • METALLURGICALLY BONDED

Microsemi

美高森美

1N5520DUR

LEADLESS PACKAGE FOR SURFACE MOUNT ZENER DIODE, 500mW

• 1N5518BUR-1 THRU 1N5546BUR-1 AVAILABLE IN JAN, JANTX AND JANTXV PER MIL-PRF-19500/437 • ZENER DIODE, 500mW • LEADLESS PACKAGE FOR SURFACE MOUNT • LOW REVERSE LEAKAGE CHARACTERISTICS • METALLURGICALLY BONDED

Microsemi

美高森美

1N5520DUR-1

LEADLESS PACKAGE FOR SURFACE MOUNT ZENER DIODE, 500mW

• 1N5518BUR-1 THRU 1N5546BUR-1 AVAILABLE IN JAN, JANTX AND JANTXV PER MIL-PRF-19500/437 • ZENER DIODE, 500mW • LEADLESS PACKAGE FOR SURFACE MOUNT • LOW REVERSE LEAKAGE CHARACTERISTICS • METALLURGICALLY BONDED

Microsemi

美高森美

1N5520UR

Low Voltage Surface Mount 500 mW Avalanche Diodes

• 1N5518BUR-1 THRU 1N5546BUR-1 AVAILABLE IN JAN, JANTX AND JANTXV PER MIL-PRF-19500/437 • ZENER DIODE, 500mW • LEADLESS PACKAGE FOR SURFACE MOUNT • LOW REVERSE LEAKAGE CHARACTERISTICS • METALLURGICALLY BONDED

Microsemi

美高森美

1N5520UR

LEADLESS PACKAGE FOR SURFACE MOUNT ZENER DIODE, 500mW

• 1N5518BUR-1 THRU 1N5546BUR-1 AVAILABLE IN JAN, JANTX AND JANTXV PER MIL-PRF-19500/437 • ZENER DIODE, 500mW • LEADLESS PACKAGE FOR SURFACE MOUNT • LOW REVERSE LEAKAGE CHARACTERISTICS • METALLURGICALLY BONDED

Microsemi

美高森美

1N5520UR-1

LEADLESS PACKAGE FOR SURFACE MOUNT ZENER DIODE, 500mW

• 1N5518BUR-1 THRU 1N5546BUR-1 AVAILABLE IN JAN, JANTX AND JANTXV PER MIL-PRF-19500/437 • ZENER DIODE, 500mW • LEADLESS PACKAGE FOR SURFACE MOUNT • LOW REVERSE LEAKAGE CHARACTERISTICS • METALLURGICALLY BONDED

Microsemi

美高森美

1N5520A

封装/外壳：DO-204AH，DO-35，轴向 包装：散装 描述：VOLTAGE REGULATOR 分立半导体产品 二极管 - 齐纳 - 单

Microchip

微芯科技

1N5520AUR-HR

0.5W 3.9V 10% Zener Diode

DIGITRON

1N5520B

Low Voltage Avalanche Zener

Microchip

微芯科技

1N5520B

LOW REVERSE LEAKAGE CHARACTERISTICS

文件：114.68 Kbytes Page：2 Pages

Microsemi

美高森美

1N5520BUR-1

ZENER DIODE, 500mW

文件：111.15 Kbytes Page：2 Pages

Microsemi

美高森美

1N5520产品属性

  • 类型

    描述

  • 型号

    1N5520

  • 制造商

    MICROSEMI

  • 制造商全称

    Microsemi Corporation

  • 功能描述

    Low Voltage Avalanche 500 mW Zener Diodes DO-35

1N5520供应商更多...

更新时间：2025-10-11 10:55:00
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