位置：首页 > IC中文资料第6384页 > 1N5520A
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
1N5520A | LEADLESS PACKAGE FOR SURFACE MOUNT ZENER DIODE, 500mW • 1N5518BUR-1 THRU 1N5546BUR-1 AVAILABLE IN JAN, JANTX AND JANTXV PER MIL-PRF-19500/437 • ZENER DIODE, 500mW • LEADLESS PACKAGE FOR SURFACE MOUNT • LOW REVERSE LEAKAGE CHARACTERISTICS • METALLURGICALLY BONDED | MICROSEMI 美高森美 |   | |
1N5520A | 0.4W LOW VOLTAGE AVALANCHE DIODES FEATURES * Low zener noise specified * Low zener impedance * Low leakage current * Hermetically sealed glass package | JGD 固锝电子 | | |
1N5520A | LOW VOLTAGE AVALANCHES SILICON OXIDE PASSIVATED ZENER REGULATOR DIODES LOW VOLTAGE AVALANCHES SILICON OXIDE PASSIVATED ZENER REGULATOR DIODES LOW VOLTAGE AVALANCHE ZENER DIODES 400 MILLIWATTS 3.3 THRU 33 VOLTS | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | |
1N5520A | 封装/外壳：DO-204AH，DO-35，轴向 包装：散装 描述：VOLTAGE REGULATOR 分立半导体产品 二极管 - 齐纳 - 单 | MICROCHIP 微芯科技 | | |
LEADLESS PACKAGE FOR SURFACE MOUNT ZENER DIODE, 500mW • 1N5518BUR-1 THRU 1N5546BUR-1 AVAILABLE IN JAN, JANTX AND JANTXV PER MIL-PRF-19500/437 • ZENER DIODE, 500mW • LEADLESS PACKAGE FOR SURFACE MOUNT • LOW REVERSE LEAKAGE CHARACTERISTICS • METALLURGICALLY BONDED | MICROSEMI 美高森美 | | ||
0.5W 3.9V 10% Zener Diode This Zener Diode is packaged in DO-35, which has a power dissipation of 0.5W.\n\n Available as High Reliability device as per MIL-PRF-19500/435 indicate –HR suffix after the part number. Contact for -HR flow. Add \"PBF\" suffix for Pb-free lead finish. | DIGITRON | | ||
LEADLESS PACKAGE FOR SURFACE MOUNT ZENER DIODE, 500mW • 1N5518BUR-1 THRU 1N5546BUR-1 AVAILABLE IN JAN, JANTX AND JANTXV PER MIL-PRF-19500/437 • ZENER DIODE, 500mW • LEADLESS PACKAGE FOR SURFACE MOUNT • LOW REVERSE LEAKAGE CHARACTERISTICS • METALLURGICALLY BONDED | MICROSEMI 美高森美 | | ||
LEADLESS PACKAGE FOR SURFACE MOUNT ZENER DIODE, 500mW • 1N5518BUR-1 THRU 1N5546BUR-1 AVAILABLE IN JAN, JANTX AND JANTXV PER MIL-PRF-19500/437 • ZENER DIODE, 500mW • LEADLESS PACKAGE FOR SURFACE MOUNT • LOW REVERSE LEAKAGE CHARACTERISTICS • METALLURGICALLY BONDED | MICROSEMI 美高森美 | | ||
0.5W 3.9V 10% Zener Diode This Zener Diode is packaged in SOD-80, which has a power dissipation of 0.5W.\n\n Available as High Reliability device as per MIL-PRF-19500/435 indicate –HR suffix after the part number. Contact for -HR flow. Add \"PBF\" suffix for Pb-free lead finish. | DIGITRON | | ||
封装/外壳：DO-204AH，DO-35，轴向 包装：卷带（TR） 描述：VOLTAGE REGULATOR 分立半导体产品 二极管 - 齐纳 - 单 | MICROCHIP 微芯科技 | | ||
LOW REVERSE LEAKAGE CHARACTERISTICS • 1N5518-1 THRU 1N5546B-1 AVAILABLE IN JAN, JANTX AND JANTXV PER MIL-PRF-19500/437 • LOW REVERSE LEAKAGE CHARACTERISTICS • LOW NOISE CHARACTERISTICS • DOUBLE PLUG CONSTRUCTION • METALLURGICALLYBONDED | CDI-DIODE | | ||
0.4W LOW VOLTAGE AVALANCHE DIODES FEATURES * Low zener noise specified * Low zener impedance * Low leakage current * Hermetically sealed glass package | JGD 固锝电子 | | ||
0.4W LOW VOLTAGE AVALANCHE DIODES FEATURES * Low zener noise specified * Low zener impedance * Low leakage current * Hermetically sealed glass package | JGD 固锝电子 | | ||
0.4W LOW VOLTAGE AVALANCHE DIODES FEATURES * Low zener noise specified * Low zener impedance * Low leakage current * Hermetically sealed glass package | JGD 固锝电子 | |
1N5520A产品属性
- 类型
描述
- 型号
1N5520A
- 制造商
JGD
- 制造商全称
Jinan Gude Electronic Device
- 功能描述
0.4W LOW VOLTAGE AVALANCHE DIODES
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
Microchip Technology / Atmel |
25+ |
N/A |
6895 |
正规渠道,免费送样。支持账期,BOM一站式配齐 |
|||
Microchip Technology / Atmel |
25+ |
N/A |
6843 |
样件支持,可原厂排单订货! |
|||
CODZ |
08+ |
二极管 |
100 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
1N5521B |
25+ |
135 |
135 |
||||
CODZ |
24+ |
SMD |
18700 |
||||
CODZ |
24+ |
2170 |
进口原装正品优势供应 |
||||
CODZ |
NA |
6688 |
8 |
现货库存 |
|||
CODZ |
23+ |
二极管 |
100 |
全新原装正品现货,支持订货 |
|||
CODZ |
23+ |
二极管 |
2600 |
原厂原装正品 |
|||
Microsemi |
25+ |
电联咨询 |
7800 |
公司现货,提供拆样技术支持 |
1N5520A芯片相关品牌
1N5520A规格书下载地址
1N5520A参数引脚图相关
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- 1N5519UR-1
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- 1N5519DURTR-1
- 1N5519DUR-1
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1N5520A数据表相关新闻
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2019-12-2
DdatasheetPDF页码索引
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