型号 功能描述 生产厂家&企业 LOGO 操作
1N5386A

SILICONZENERDIODES

VZ:3.3-200Volts PD:5Watts FEATURES: *CompleteVoltageRange3.3to200Volts *Highpeakreversepowerdissipation *Highreliability *Lowleakagecurrent

EIC

EIC discrete Semiconductors

EIC
1N5386A

5-WATTZENERREGULATORDIODES3.3-200VOLTS

5-WATTZENERREGULATORDIODES3.3-200VOLTS

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体产品股份有限公司

NJSEMI
1N5386A

SILICONZENERDIODES

VZ:3.3-200Volts PD:5Watts FEATURES: *CompleteVoltageRange3.3to200Volts *Highpeakreversepowerdissipation *Highreliability *Lowleakagecurrent

EIC

EIC discrete Semiconductors

EIC
1N5386A

SILICONZENERDIODES

文件:103.76 Kbytes Page:3 Pages

EIC

EIC discrete Semiconductors

EIC

5WZENERDIODE

Features •VoltageRange8.2V-200V •GlassPassivatedJunction •5WSteadyState •HighSurgeCapability •±5VoltageToleranceonNominalVZisStandard •100Tested

DIODESDiodes Incorporated

美台半导体

DIODES

GLASSPASSIVATEDJUNCTIONSILICONZENERDIODE(VOLTAGE-11to200VoltsPower-5.0Watts)

FEATURES •Forsurfacemountedapplicationsinordertooptimizeboardspace. •Lowprofilepackage •Built-instrainrelief •Glasspassivatedjunction •Lowinductance •TypicalIDlessthan1.0µAabove13V •PlasticpackagehasUnderwritersLaboratoryFlammabilityClassification94V-O •

PANJITPan Jit International Inc.

強茂強茂股份有限公司

PANJIT

5WATTZENERREGULATORDIODES3.3-200VOLTS

5-WattSurmetic40SiliconZenerDiodes

MotorolaMotorola, Inc

摩托罗拉加尔文制造公司

Motorola

GLASSPASSIVATEDJUNCTIONSILICONZENERDIODE

VOLTAGE-11TO200VoltsPower-5.0Watts FEATURES Lowprofilepackage Built-instrainrelief Glasspassivatedjunction Lowinductance TypicalIDlessthan1Aabove13V Hightemperaturesoldering:260/10secondsatterminals PlasticpackagehasUnderwritersLaboratory Flammability

TRSYS

Transys Electronics

TRSYS

5WattSurmetic40SiliconZenerDiodes

5WattSurmetic40SiliconZenerDiodes •••acompleteseriesof5WattZenerDiodeswithtightlimitsandbetteroperatingcharacteristicsthatreflectthesuperiorcapabilitiesofsilicon-oxide-passivatedjunctions.Allthisisinanaxial-lead,transfer-moldedplasticpackagethatoffersprote

bocaBoca Semiconductor Corporation

博卡博卡半导体公司

boca

封装/外壳:T-18,轴向 包装:卷带(TR) 描述:DIODE ZENER 180V 5W T18 分立半导体产品 二极管 - 齐纳 - 单

MicrosemiMicrosemi Corporation

美高森美美高森美公司

Microsemi

封装/外壳:T-18,轴向 包装:卷带(TR) 描述:DIODE ZENER 180V 5W T18 分立半导体产品 二极管 - 齐纳 - 单

MicrosemiMicrosemi Corporation

美高森美美高森美公司

Microsemi

1N5386A产品属性

  • 类型

    描述

  • 型号

    1N5386A

  • 制造商

    Microsemi Corporation

  • 功能描述

    5.0W, VZ = 180V, ? 10% - Tape and Reel

  • 制造商

    Microsemi Corporation

  • 功能描述

    DIODE ZENER 5.0W 180V 10% T-18

更新时间:2025-7-31 23:01:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
三年内
1983
只做原装正品
SUNMATE/森美特
24+
NA/
26705
原装现货,当天可交货,原型号开票
ON
24+/25+
4000
原装正品现货库存价优
SUNMATE/森美特
21+
DO-15
120000
长期代理优势供应
VISHAY
23+
DO-27
120000
十七年VIP会员,诚信经营,一手货源,原装正品可零售!
COMON
25+23+
017AA
17387
绝对原装正品全新进口深圳现货
9220
150
公司优势库存 热卖中!
ON(安森美)
2511
8484
电子元器件采购降本 30%!盈慧通原厂直采,砍掉中间差价
EIC
24+
3000
ON/VISHAY
20+
DO-201AE
36800
原装优势主营型号-可开原型号增税票

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