1.3A, 500V N-CHANNEL POWER MOSFET

文件：183.7 Kbytes Page：6 Pages

1.3A, 500V N-CHANNEL POWER MOSFET

GOLD BONDED GERMANIUM DIODE

文件：43.32 Kbytes Page：1 Pages

1.3A, 500V N-CHANNEL POWER MOSFET

文件：177.99 Kbytes Page：6 Pages

1.3 Amps, 500 Volts N-CHANNEL POWER MOSFET

文件：169.79 Kbytes Page：6 Pages

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

文件：256.69 Kbytes Page：7 Pages

1.3A, 500V N-CHANNEL POWER MOSFET

文件：183.7 Kbytes Page：6 Pages

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

文件：256.69 Kbytes Page：7 Pages

1.3A, 500V N-CHANNEL POWER MOSFET

文件：183.7 Kbytes Page：6 Pages

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

文件：256.69 Kbytes Page：7 Pages

1.3A, 500V N-CHANNEL POWER MOSFET

文件：183.7 Kbytes Page：6 Pages

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

文件：256.69 Kbytes Page：7 Pages

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

文件：256.69 Kbytes Page：7 Pages

1.3A, 500V N-CHANNEL POWER MOSFET

文件：183.7 Kbytes Page：6 Pages

1.3A, 500V N-CHANNEL POWER MOSFET

文件：183.7 Kbytes Page：6 Pages

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

文件：256.69 Kbytes Page：7 Pages

1.3A, 500V N-CHANNEL POWER MOSFET

文件：183.7 Kbytes Page：6 Pages

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

文件：256.69 Kbytes Page：7 Pages

N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR

DESCRIPTION The UTC 1N50A is an N-channel mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology allows a minimum on-state resistance and superior switching performance. It also can withstand high energy pulse in the avalanch

Drain Current ID= 1.2A@ TC=25C

•FEATURES •Drain Current ID= 1.2A@ TC=25℃ •Drain Source Voltage- : VDSS= 500V(Min) •Static Drain-Source On-Resistance : RDS(on) = 5.5Ω(Max) •Fast Switching •APPLICATIONS •Switch mode power supply.