封装/外壳：DO-204AH，DO-35，轴向 包装：散装 描述：DIODE GEN PURP 75V 150MA DO35 分立半导体产品 二极管 - 整流器 - 单

封装/外壳：DO-204AH，DO-35，轴向 包装：散装 描述：DIODE GEN PURP 75V 150MA DO35 分立半导体产品 二极管 - 整流器 - 单

High-speed diodes

DESCRIPTION The 1N4150 and 1N4151 are high-speed switching diodes fabricated in planar technology, and encapsulated in hermetically sealed leaded glass SOD27 (DO-35) packages. FEATURES • Hermetically sealed leaded glass SOD27 (DO-35) package • High switching speed: max. 4 ns • General app

Silicon Epitaxial Planar Diode

Features • Silicon Epitaxial Planar Diode • AEC-Q101 qualified • Compliant to RoHS directive 2002/95/EC and in accordance to WEEE 2002/96/EC • Halogen-free according to IEC 61249-2-21 definition Applications • Extreme fast switches

SMALL SIGNAL SWITCHING DIODE

FEATURES • Silicon epitaxial planar diode • Fast swithching diodes • 500mW power dissipation • The diode is also available in the Mini-MELF case with the type designation LL4151

SURFACE MOUNT SWITCHING DIODES

FEATURES • Fast switching Speed • Electrically Identical to Standard JEDEC • High Conductance • Surface Mount Package Ideally Suited for Automatic Insertion • Flat package SOD-123 in stead mini-MELF package.

SIGNAL DIODE

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