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1N4151价格
参考价格：￥0.0000
型号：1N4151 品牌：Genteq 备注：这里有1N4151多少钱，2024年最近7天走势，今日出价，今日竞价，1N4151批发/采购报价，1N4151行情走势销售排行榜，1N4151报价。| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
1N4151 | High-speeddiodes DESCRIPTION The1N4150and1N4151arehigh-speedswitchingdiodesfabricatedinplanartechnology,andencapsulatedinhermeticallysealedleadedglassSOD27(DO-35)packages. FEATURES •Hermeticallysealedleadedglass SOD27(DO-35)package •Highswitchingspeed:max.4ns •Generalapp | PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦 |  |   |
1N4151 | SiliconEpitaxialPlanarDiode Features •SiliconEpitaxialPlanarDiode •AEC-Q101qualified •ComplianttoRoHSdirective2002/95/ECandinaccordancetoWEEE2002/96/EC •Halogen-freeaccordingtoIEC61249-2-21definition Applications •Extremefastswitches | VishayVishay Siliconix 威世科技 |  | |
1N4151 | SMALLSIGNALSWITCHINGDIODE FEATURES •Siliconepitaxialplanardiode •Fastswithchingdiodes •500mWpowerdissipation •ThediodeisalsoavailableintheMini-MELFcasewiththetype designationLL4151 | CHENYIShanghai Lunsure Electronic Tech 商朗电子上海商朗电子科技有限公司 |  | |
1N4151 | COMPUTERDIODESwitching
| MicrosemiMicrosemi Corporation 美高森美美高森美公司 |  | |
1N4151 | 500mW75VoltSiliconEpitaxialDiode Features ●PlanarPassivated ●MetallurgicallybondedConstruction ●MoistureSensitivityLevel1 | MCCMicro Commercial Components 美微科美微科半导体公司 |  | |
1N4151 | COMPUTERDIODESwitching
| MicrosemiMicrosemi Corporation 美高森美美高森美公司 | | |
1N4151 | SiliconPlanarDiodes UltrafastRecoveryRectifierDiodes Features Veryhighswitchingspeed Lowjunctioncapacitance Lowleakagecurrent ComplianttoRoHS,REACH, ConflictMinerals1) TypicalApplications Signalprocessing, High-speedswitching Commercialgrade1) MechanicalDa | DiotecDIOTEC 德欧泰克 |  | |
1N4151 | silicondiode SILICONDIODE | ETC1List of Unclassifed Manufacturers 未分类制造商 |  | |
1N4151 | HIGH-SPEEDSWITCHINGDIODE FEATURES ●Highreliability ●Smallsurfacemountingtype APPLICATIONS ●Highspeedswitchandgeneralpurposeusein computerandindustrialapplications CONSTRUCTION ●Siliconepitaxialplanar | HYyueqing hongyi electronics co.,ltd 宏一乐清市宏一电子有限公司 |  | |
1N4151 | Small-SignalDiodeFastSwitchingDiode Features ◆SiliconEpitaxialPlanarDiode ◆Fastswitchingdiode ◆Thisdiodeisalsoavailableinothercasestylesincludingthe MiniMELFcasewiththetypedesignationLL4151. MechanicalData ◆Case:DO-34,DO-35GlassCase ◆Weight:approx.0.13g | Good-Ark Good-Ark |  | |
1N4151 | SILICONPLANAREPITAXIALHIGHSPEEDDIODE SILICONPLANAREPITAXIALHIGHSPEEDDIODE 500mW DO-35 GlassAxialPackage | TEL TRANSYS Electronics Limited |  | |
1N4151 | HIGHSPEEDSWITCHINGDIODE FEATURES: •Highswitchingspeed:max.4ns •Reversevoltage:max.50V •Peakreversevoltage:max.75V •Pb/RoHSFree MECHANICALDATA: Case:DO-35GlassCase Weight:approx.0.13g | SYNSEMI SynSemi，Inc. |  | |
1N4151 | SMALLSIGNALSWITCHINGDIODE REVERSEVOLTAGE:50VCURRENT:0.15A FEATURES ◇Siliconepitaxialplanardiode ◇Highspeedswitchingdiode ◇500mWpowerdissipation | BILINGalaxy Semi-Conductor Holdings Limited 世纪微电子常州银河世纪微电子股份有限公司 |  | |
1N4151 | SILICONEPITAXIALPLANARDIODES SILICONEPITAXIALPLANARDIODES forgeneralpurposeandswitching | SEMTECH_ELECSEMTECH ELECTRONICS LTD. 先之科半导体先之科半导体科技（东莞）有限公司 |  | |
1N4151 | HIGHSPEEDSWITCHINGDIODES VOLTAGE：50-100VCURRENT：0.15to0.2A FEATURES •Siliconepitaxialplanardiodes •Lowpowerloss,highefficiency •Lowlekage •Lowforwardvoltagh •Highspeedswitching •Highcurrentcapability •Highreliability MECHANICALDATA •Case:Glasssealedcase •Lead:MIL-STD-202E,Metho | CHONGQINGCHONGQING PINGYANG ELECTRONICS CO.,LTD 重庆平伟实业重庆平伟实业股份有限公司 |  | |
1N4151 | ULTRAHIGHSPEEDSILICONPLANAREPITAXIALDIODES ULTRAHIGHSPEEDSILICONPLANAREPITAXIALDIODES •C...4pF@VR=0,f=1.0MHz •trr...2.0ns@IF=10mA,VR=-6.0V,RL=100Ω | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 |  | |
1N4151 | SILICONEPITAXIALPLANARDIODE SiliconExpitxialPlanarDiode forgeneralpurposeandswitching. Thetypes1N4149,1N4447and1N4449arealsoavaible inglasscaseDO-34 | SEMTECH Semtech Corporation |  | |
1N4151 | TECHNICALSPECIFICATIONSOFHIGHSPEEDSWITCHINGDIODES VOLTAGERANGE-50to100VoltsCURRENT-0.075to0.2Ampere FEATURES *Siliconepitaxialplanardiodes *Lowleakage *Lowforwardvoltage *Highspeedswitching *Highcurrentcapability *Highreliability *Lowpowerloss,highefficiency | DCCOMDc Components 直流元件直流元件有限公司 |  | |
1N4151 | 500mWEPITAXIALPLANARDIODES Features ■PLANARPROCESS ■500mWPOWERDISSIPATION ■INDUSTRYSTANDARDDO-35PACKAGE ■MEETSULSPECIFICATION94V-0 | FCI Amphenol ICC |  | |
1N4151 | HIGHSPEEDSWITCHINGDIODE FEATURES: •Highswitchingspeed:max.4ns •Reversevoltage:max.50V •Peakreversevoltage:max.75V •Pb/RoHSFree MECHANICALDATA: Case:DO-35GlassCase Weight:approx.0.13g | EIC EIC |  | |
1N4151 | SILICONPLANAREPITAXIALHIGHSPEEDDIODE SILICONPLANAREPITAXIALHIGHSPEEDDIODE 500mW DO-35 GlassAxialPackage | CDIL CDIL |  | |
1N4151 | SWITCHINGRECTIFIER SWITCHINGRECTIFIER AvailableNon-RoHS(standard)orRoHScompliant(addPBFsuffix). Availableas“HR”(highreliability)screenedperMIL-PRF-19500,JANTXlevel.Add“HR”suffixtobasepartnumber. | DIGITRON Digitron Semiconductors |  | |
1N4151 | SILICONSWITCHINGDIODES DESCRIPTION TheCENTRALSEMICONDUCTOR1N4151SeriestypesareHermeticallySealedSiliconDiodesDesignedforfastswitchingapplications. | CentralCentral Semiconductor Corp 美国中央半导体 |  | |
1N4151 | SmallSignalSwitchingDiodes REVERSEVOLTAGE:50VCURRENT:0.15A Features ◇Siliconepitaxialplanardiode ◇Highspeedswitchingdiode ◇500mWpowerdissipation | LUGUANGShenzhen Luguang Electronic Technology Co., Ltd 鲁光电子深圳市鲁光电子科技有限公司 |  | |
1N4151 | SMALLSIGNALSWITCHINGDIODE REVERSEVOLTAGE:50V CURRENT:0.15A FEATURES ◇Siliconepitaxialplanardiode ◇Highspeedswitchingdiode ◇500mWpowerdissipation MECHANICALDATA ◇Case:DO-35,glasscase ◇Polarity:Colorbanddenotescathode ◇Weight:0.004ounces,0.13grams | DSK Diode Semiconductor Korea |  | |
1N4151 | 1N4151SIGNALDIODE MechanicalData ItemsMaterials PackageDO-35 CaseHermeticallysealedglass Lead/FinishDoublestud/SolderPlating ChipGlassPassivated | WILLASWILLAS electronics corp 威倫威倫电子股份有限公司 |  | |
1N4151 | SmallSignalDevices SWITCHINGDIODES | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | | |
1N4151 | SmallSignalDevices SWITCHINGDIODES | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | | |
1N4151 | SmallSignalDevices SWITCHINGDIODES | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | | |
1N4151 | 50VDetectionswitchtube 文件：652.024 Kbytes Page：1 Pages |  | | |
1N4151 | 500mWSiliconSwitchingDiode 文件：391.26 Kbytes Page：4 Pages | MCCMicro Commercial Components 美微科美微科半导体公司 | | |
1N4151 | UltrafastSwitchingSi-PlanarDiodes 文件：92.72 Kbytes Page：2 Pages | DiotecDIOTEC 德欧泰克 | | |
1N4151 | SmallSignalFastSwitchingDiodes 文件：116.07 Kbytes Page：5 Pages | VishayVishay Siliconix 威世科技 | | |
1N4151 | SmallSignalSwitchingDiodes 文件：65.7 Kbytes Page：3 Pages | JINGHENG Jinan Jing Heng Electronics Co., Ltd. |  | |
1N4151 | SmallSignalSwitchingDiodes 文件：137.44 Kbytes Page：2 Pages | DiotecDIOTEC 德欧泰克 | | |
1N4151 | UltrafastRecoveryRectifierDiodes 文件：131.59 Kbytes Page：2 Pages | DiotecDIOTEC 德欧泰克 | | |
1N4151 | SmallSignalDiode 文件：35.43 Kbytes Page：2 Pages | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 |  | |
1N4151 | DiodeData 文件：138.9 Kbytes Page：1 Pages | NSCNational Semiconductor (TI) 美国国家半导体美国国家半导体公司 |  | |
1N4151 | FASTSWITCHINGDIODE 文件：49.29 Kbytes Page：1 Pages | DIODESDiodes Incorporated 达尔科技 |  | |
1N4151 | SMALLSIGNALDIODES 文件：214.74 Kbytes Page：4 Pages | GE GE Industrial Company |  | |
1N4151 | SIGNALDIODE 文件：11.62 Kbytes Page：1 Pages | RECTRONRECTRON LTD 瑞创深圳市瑞创科技有限公司 |  | |
1N4151 | 封装/外壳：DO-204AH，DO-35，轴向 包装：散装 描述：DIODE GEN PURP 75V 150MA DO35 分立半导体产品 二极管 - 整流器 - 单 | ONSEMION Semiconductor 安森美半导体安森美半导体公司 |  | |
1N4151 | 封装/外壳：DO-204AH，DO-35，轴向 包装：管件 描述：DIODE GEN PURP 75V 200MA DO35 分立半导体产品 二极管 - 整流器 - 单 | MicrochipMicrochip Technology Inc. 微芯科技微芯科技股份有限公司 |  | |
1N4151 | SmallSignalFastSwitchingDiodes 文件：104.76 Kbytes Page：4 Pages | VishayVishay Siliconix 威世科技 | | |
SmallSignalFastSwitchingDiodes FEATURES •Siliconepitaxialplanardiode •Materialcategorization: fordefinitionsofcompliancepleasesee www.vishay.com/doc?99912 APPLICATIONS •Extremefastswitches | VishayVishay Siliconix 威世科技 | | | |
ComputerSwitchingDiode DESCRIPTION Thesepopular1N4149,1N4151,1N4154and1N4446–1N4449seriesofJEDECregisteredswitching/signaldiodesareavailablewithinternalmetallurgicalbondedconstruction.Thesesmalllowcapacitancediodes,withveryfastswitchingspeeds,arehermeticallysealedandbondedintoadou | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | | | |
SwitchingDiode DESCRIPTION Thesepopular1N4149,1N4151,1N4154and1N4446–1N4449seriesofJEDECregisteredswitching/signaldiodesareavailablewithinternalmetallurgicalbondedconstruction.Thesesmalllowcapacitancediodes,withveryfastswitchingspeeds,arehermeticallysealedandbondedintoadou | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | | | |
SURFACEMOUNTSWITCHINGDIODES FEATURES •FastswitchingSpeed •ElectricallyIdenticaltoStandardJEDEC •HighConductance •SurfaceMountPackageIdeallySuitedforAutomaticInsertion •FlatpackageSOD-123insteadmini-MELFpackage. | PANJITPANJIT International Inc. 强茂強茂股份有限公司 |  | | |
SMALLSIGNALDIODES FEATURES ♦SiliconEpitaxialPlanarDiode ♦Fastswitchingdiode. ♦Thisdiodeisalsoavailableinother casestylesincludingtheSOD-123case withthetypedesignation1N4151WandtheMini-MELF casewiththetypedesignationLL4151. MECHANICALDATA Case:SOD-123PlasticCase | GE GE Industrial Company | | | |
SiliconEpitaxialPlanarSmallSignalDiode Features •SOD123package •Fastswitching | SEMTECH_ELECSEMTECH ELECTRONICS LTD. 先之科半导体先之科半导体科技（东莞）有限公司 | | | |
SMALLSIGNALDIODES Features ●SiliconEpitaxialPlanarDiode ●Fastswitchingdiods. ●Thisdiodsisalsoavailableinothercasestylesincluding:theSOD-123casewiththetypedesignation1N4151WandtheMini-MELFcasewiththetypedisignationLL4151. | KEXINGUANGDONG KEXIN INDUSTRIAL CO.,LTD 科信电子广东科信实业有限公司 |  | | |
SmallSignalFastSwitchingDiode FEATURES •Siliconepitaxialplanardiode •Fastswitchingdiode •AEC-Q101qualifiedavailable •BaseP/N-E3-RoHS-compliant,commercial grade •BaseP/N-HE3-RoHS-compliant,AEC-Q101qualified •Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 | VishayVishay Siliconix 威世科技 | | | |
Fastswitiching Features •SOD123package •Fastswitching | Surge SURGE COMPONENTS |  | | |
SURFACEMOUNTFASTSWITCHINGDIODE Features ●HighConductance ●FastSwitchingSpeed ●SurfaceMountPackageIdeallySuitedforAutomaticInsertion ●ForGeneralPurposeSwitchingApplication | SUNMATESUNMATE electronic Co., LTD 森美特森美特半导体股份有限公司 | | | |
SmallSignalFastSwitchingDiode FEATURES •Siliconepitaxialplanardiode •Fastswitchingdiode •AEC-Q101qualifiedavailable •BaseP/N-E3-RoHS-compliant,commercial grade •BaseP/N-HE3-RoHS-compliant,AEC-Q101qualified •Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc? | VishayVishay Siliconix 威世科技 | | | |
SmallSignalFastSwitchingDiode FEATURES •Siliconepitaxialplanardiode •Fastswitchingdiode •AEC-Q101qualifiedavailable •BaseP/N-E3-RoHS-compliant,commercial grade •BaseP/N-HE3-RoHS-compliant,AEC-Q101qualified •Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 | VishayVishay Siliconix 威世科技 | | | |
SmallSignalFastSwitchingDiode FEATURES •Siliconepitaxialplanardiode •Fastswitchingdiode •AEC-Q101qualifiedavailable (partnumberonrequest) •BaseP/N-G3-green,commercialgrade •Materialcategorization: fordefinitionsofcompliancepleasesee www.vishay.com/doc?99912 | VishayVishay Siliconix 威世科技 | | | |
SmallSignalFastSwitchingDiode FEATURES •Siliconepitaxialplanardiode •Fastswitchingdiode •AEC-Q101qualifiedavailable(partnumberonrequest) •BaseP/N-G3-green,commercialgrade •Materialcategorization:fordefinitionsofcompliancepleaseseewww.vishay.com/doc?99912 | VishayVishay Siliconix 威世科技 | | | |
SmallSignalFastSwitchingDiode FEATURES •Siliconepitaxialplanardiode •Fastswitchingdiode •AEC-Q101qualifiedavailable (partnumberonrequest) •BaseP/N-G3-green,commercialgrade •Materialcategorization: fordefinitionsofcompliancepleasesee www.vishay.com/doc?99912 | VishayVishay Siliconix 威世科技 | | | |
SmallSignalFastSwitchingDiode FEATURES •Siliconepitaxialplanardiode •Fastswitchingdiode •AEC-Q101qualifiedavailable •BaseP/N-E3-RoHS-compliant,commercial grade •BaseP/N-HE3-RoHS-compliant,AEC-Q101 qualified •Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 | VishayVishay Siliconix 威世科技 | | |
1N4151产品属性
- 类型
描述
- 型号
1N4151
- 功能描述
整流器 High Conductance Ultra Fast
- RoHS
否
- 制造商
Vishay Semiconductors
- 产品
Standard Recovery Rectifiers
- 反向电压
100 V
- 恢复时间
1.2 us
- 正向连续电流
2 A
- 最大浪涌电流
35 A 反向电流
- IR
5 uA
- 安装风格
SMD/SMT
- 封装/箱体
DO-221AC
- 封装
Reel
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
DIOTEC(德欧泰克) |
23+ |
DO-15 |
7350 |
现货供应,当天可交货!免费送样,原厂技术支持!!! |
|||
Fairchild |
16+ |
原厂封装 |
10000 |
全新原装正品,代理优势渠道供应,欢迎来电咨询 |
|||
PANJIT |
23+ |
SOD-123 |
45000 |
热卖优势现货 |
|||
Microsemi |
1942+ |
N/A |
908 |
加我qq或微信，了解更多详细信息,体验一站式购物 |
|||
FS |
2022+ |
SMD圆 |
7300 |
原装现货 |
|||
ST |
2017+ |
DIP |
54789 |
深圳代理原装现货进口库存(香港-日本-台湾)开17点增票 |
|||
PH |
21+ |
DO-41 |
2780 |
原装现货假一赔十 |
|||
ONSEMI |
23/22+ |
NA |
9000 |
代理渠道.实单必成 |
|||
FSC |
1845+ |
DO-41 |
600 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
ST |
23+ |
DIP |
16900 |
支持样品,原装现货,提供技术支持! |
1N4151芯片相关品牌
1N4151规格书下载地址
1N4151参数引脚图相关
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- 1N4141
1N4151数据表相关新闻
1N4746A
进口代理
2022-8-291N4148WS CJ/长电 SOD323 支持原装现货订货，欢迎咨询
1N4148WSCJ/长电SOD323
2021-3-81N4749A
1N4749A，当天发货0755-82732291全新原装现货或门市自取.
2020-11-41N4148WS T4
商品目录开关二极管 反向恢复时间（trr）4ns 直流反向耐压（Vr）100V 平均整流电流（Io）150mA 正向压降（Vf）1.25V@150mA
2020-10-261N4148W-7-F
製造商:DiodesIncorporated 產品類型:二極管-通用、電源、開關 RoHS:詳細資料 產品:SwitchingDiodes 安裝風格:SMD/SMT 封裝/外殼:SOD-123 峰值反向電壓:100V 最大衝擊電流:2A If-順向電流:300mA 配置:Single 恢復時間:4ns Vf-順向電壓:1.25V Ir-反向電流:1uA 最低
2020-10-151N4729A公司大量全新现货随时可以发货
瀚佳科技(深圳)有限公司专业为工厂一站式BOM配单服务
2019-2-28
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