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1N23GR

SILICON POINT CONTACT MIXER DIODES

SILICON POINT CONTACT MIXER DIODES ASI point contact mixer diodes are designed for applications from UHF through 26 GHz.

ETCList of Unclassifed Manufacturers

未分类制造商

1N23GR

RF Mixer

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

S - X Band Point Contact Mixer Diodes

SILICON POINT CONTACT MIXER DIODES ASI point contact mixer diodes are designed for applications from UHF through 26 GHz.

ETCList of Unclassifed Manufacturers

未分类制造商

SILICON POINT CONTACT MIXER DIODES

SILICON POINT CONTACT MIXER DIODES ASI point contact mixer diodes are designed for applications from UHF through 26 GHz.

ETCList of Unclassifed Manufacturers

未分类制造商

SILICON MIXER DIODE

DESCRIPTION: The ASI 1N23WE is a Silicon Mixer Diode Designed for Applications Operating From 8.0 to 12.4 GHz. FEATURES: • High burnout resistance • Low noise figure • Hermetically sealed package

ASI

SILICON MIXER DIODE

DESCRIPTION: The ASI 1N23WG is a Silicon Mixer Diode Designed for Applications Operating From 8.0 to 12.4 GHz. FEATURES: • High burnout resistance • Low noise figure • Hermetically sealed package • Matched pairs available by adding suffix “M” or “MR” for matched forward and reverse

ASI

SILICON MIXER DIODE

DESCRIPTION: The ASI 1N23WG is a Silicon Mixer Diode Designed for Applications Operating From 8.0 to 12.4 GHz. FEATURES: • High burnout resistance • Low noise figure • Hermetically sealed package • Matched pairs available by adding suffix “M” or “MR” for matched forward and reverse

ASI

1N23GR产品属性

  • 类型

    描述

  • Minimum Operating Temperature:

    -55°C

  • Maximum VSWR:

    1.3

  • Maximum Operating Temperature:

    150°C

  • Maximum IF Impedance:

    465Ohm

  • Maximum Conversation Loss:

    6dB

  • Frequency Range:

    S-X

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