| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
1N23G | SILICON POINT CONTACT MIXER DIODES SILICON POINT CONTACT MIXER DIODES ASI point contact mixer diodes are designed for applications from UHF through 26 GHz. | ETCList of Unclassifed Manufacturers 未分类制造商 |   | |
1N23G | S - X Band Point Contact Mixer Diodes SILICON POINT CONTACT MIXER DIODES ASI point contact mixer diodes are designed for applications from UHF through 26 GHz. | ETCList of Unclassifed Manufacturers 未分类制造商 | | |
1N23G | S - X Band Point Contact Mixer Diodes 文件：80.62 Kbytes Page：2 Pages | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | |
1N23G | S - X Band Point Contact Mixer Diodes 文件：80.62 Kbytes Page：2 Pages | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | |
1N23G | S - X Band Point Contact Mixer Diodes | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | |
SILICON POINT CONTACT MIXER DIODES SILICON POINT CONTACT MIXER DIODES ASI point contact mixer diodes are designed for applications from UHF through 26 GHz. | ETCList of Unclassifed Manufacturers 未分类制造商 | | ||
SILICON POINT CONTACT MIXER DIODES SILICON POINT CONTACT MIXER DIODES ASI point contact mixer diodes are designed for applications from UHF through 26 GHz. | ETCList of Unclassifed Manufacturers 未分类制造商 | | ||
SILICON POINT CONTACT MIXER DIODES SILICON POINT CONTACT MIXER DIODES ASI point contact mixer diodes are designed for applications from UHF through 26 GHz. | ETCList of Unclassifed Manufacturers 未分类制造商 | | ||
RF Mixer | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | ||
S - X Band Point Contact Mixer Diodes SILICON POINT CONTACT MIXER DIODES ASI point contact mixer diodes are designed for applications from UHF through 26 GHz. | ETCList of Unclassifed Manufacturers 未分类制造商 | | ||
SILICON MIXER DIODE DESCRIPTION: The ASI 1N23WE is a Silicon Mixer Diode Designed for Applications Operating From 8.0 to 12.4 GHz. FEATURES: • High burnout resistance • Low noise figure • Hermetically sealed package | ASI | | ||
SILICON MIXER DIODE DESCRIPTION: The ASI 1N23WG is a Silicon Mixer Diode Designed for Applications Operating From 8.0 to 12.4 GHz. FEATURES: • High burnout resistance • Low noise figure • Hermetically sealed package • Matched pairs available by adding suffix “M” or “MR” for matched forward and reverse | ASI | | ||
SILICON MIXER DIODE DESCRIPTION: The ASI 1N23WG is a Silicon Mixer Diode Designed for Applications Operating From 8.0 to 12.4 GHz. FEATURES: • High burnout resistance • Low noise figure • Hermetically sealed package • Matched pairs available by adding suffix “M” or “MR” for matched forward and reverse | ASI | |
1N23G产品属性
- 类型
描述
- Minimum Operating Temperature：
-55°C
- Maximum VSWR：
1.3
- Maximum Operating Temperature：
150°C
- Maximum IF Impedance：
465Ohm
- Maximum Conversation Loss：
6dB
- Frequency Range：
S-X
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ASI |
24+ |
A-66 |
2000 |
1N23G规格书下载地址
1N23G参数引脚图相关
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1N23G数据表相关新闻
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正品
2019-3-1
DdatasheetPDF页码索引
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