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1N21价格
参考价格：￥0.0000
型号：1N2129R 品牌：All American 备注：这里有1N21多少钱，2025年最近7天走势，今日出价，今日竞价，1N21批发/采购报价，1N21行情走势销售排行榜，1N21报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
1N21 | S - X Band Point Contact Mixer Diodes 文件：80.62 Kbytes Page：2 Pages | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 |   | |
1N21 | Diode RF Mixer PN Mixer | ETC 知名厂家 | ETC | |
silicon diode SILICON DIODE | ETCList of Unclassifed Manufacturers 未分类制造商 | | ||
silicon diode SILICON DIODE | ETCList of Unclassifed Manufacturers 未分类制造商 | | ||
silicon diode SILICON DIODE | ETCList of Unclassifed Manufacturers 未分类制造商 | | ||
SILICON POWER RECTIFIER Silicon Power Rectifier ● Low Forward Voltage ● Glass to Metal Seal Construction ● Glass Passivated Die ● VRRM to 1600V ● 1050 Amps Surge Rating | Microsemi 美高森美 | | ||
Power Silicon Rectifier Diodes, 35 A/40 A/60 A DESCRIPTION/FEATURES • Low leakage current series • Good surge current capability up to 1000 A • Can be supplied to meet stringent military, aerospace and other high reliability requirements • Compliant to RoHS directive 2002/95/EC | VishayVishay Siliconix 威世威世科技公司 | | ||
35,40,and 60 Amp Power Silicon Rectifier Diodes 35,40,and 60 Amp Power Silicon Rectifier Diodes | IRF | | ||
Standard Recovery Diode, 60A Features ● Glass passivated die ● Low forward voltage drop ● High surge capability ● Low leakage current ● Normal and Reverse polarity ● Metric and UNF threads available | NAINA | | ||
DEVICE HIGH POWER STANDARD Features • High Surge Capability • Types up to 600 V VRRM | AMERICASEMI | | ||
Silicon Standard Recovery Diode Features • High Surge Capability • Types from 50 V to 200 V VRRM • Not ESD Sensitive | GENESIC | | ||
DEVICE HIGH POWER STANDARD Features • High Surge Capability • Types up to 600 V VRRM | AMERICASEMI | | ||
SILICON POWER RECTIFIER Silicon Power Rectifier ● Low Forward Voltage ● Glass to Metal Seal Construction ● Glass Passivated Die ● VRRM to 1600V ● 1050 Amps Surge Rating | Microsemi 美高森美 | | ||
Power Silicon Rectifier Diodes, 35 A/40 A/60 A DESCRIPTION/FEATURES • Low leakage current series • Good surge current capability up to 1000 A • Can be supplied to meet stringent military, aerospace and other high reliability requirements • Compliant to RoHS directive 2002/95/EC | VishayVishay Siliconix 威世威世科技公司 | | ||
Standard Recovery Diode, 60A Features ● Glass passivated die ● Low forward voltage drop ● High surge capability ● Low leakage current ● Normal and Reverse polarity ● Metric and UNF threads available | NAINA | | ||
35,40,and 60 Amp Power Silicon Rectifier Diodes 35,40,and 60 Amp Power Silicon Rectifier Diodes | IRF | | ||
Silicon Standard Recovery Diode Features • High Surge Capability • Types from 50 V to 200 V VRRM • Not ESD Sensitive | GENESIC | | ||
DEVICE HIGH POWER STANDARD Features • High Surge Capability • Types up to 600 V VRRM | AMERICASEMI | | ||
DEVICE HIGH POWER STANDARD Features • High Surge Capability • Types up to 600 V VRRM | AMERICASEMI | | ||
silicon diode SILICON DIODE | ETCList of Unclassifed Manufacturers 未分类制造商 | | ||
SILICON POWER RECTIFIER Silicon Power Rectifier ● Low Forward Voltage ● Glass to Metal Seal Construction ● Glass Passivated Die ● VRRM to 1600V ● 1050 Amps Surge Rating | Microsemi 美高森美 | | ||
Power Silicon Rectifier Diodes, 35 A/40 A/60 A DESCRIPTION/FEATURES • Low leakage current series • Good surge current capability up to 1000 A • Can be supplied to meet stringent military, aerospace and other high reliability requirements • Compliant to RoHS directive 2002/95/EC | VishayVishay Siliconix 威世威世科技公司 | | ||
35,40,and 60 Amp Power Silicon Rectifier Diodes 35,40,and 60 Amp Power Silicon Rectifier Diodes | IRF | | ||
Standard Recovery Diode, 60A Features ● Glass passivated die ● Low forward voltage drop ● High surge capability ● Low leakage current ● Normal and Reverse polarity ● Metric and UNF threads available | NAINA | | ||
DEVICE HIGH POWER STANDARD Features • High Surge Capability • Types up to 600 V VRRM | AMERICASEMI | | ||
Silicon Standard Recovery Diode Features • High Surge Capability • Types from 50 V to 200 V VRRM • Not ESD Sensitive | GENESIC | | ||
DEVICE HIGH POWER STANDARD Features • High Surge Capability • Types up to 600 V VRRM | AMERICASEMI | | ||
SILICON POWER RECTIFIER Silicon Power Rectifier ● Low Forward Voltage ● Glass to Metal Seal Construction ● Glass Passivated Die ● VRRM to 1600V ● 1050 Amps Surge Rating | Microsemi 美高森美 | | ||
Power Silicon Rectifier Diodes, 35 A/40 A/60 A DESCRIPTION/FEATURES • Low leakage current series • Good surge current capability up to 1000 A • Can be supplied to meet stringent military, aerospace and other high reliability requirements • Compliant to RoHS directive 2002/95/EC | VishayVishay Siliconix 威世威世科技公司 | | ||
Standard Recovery Diode, 60A Features ● Glass passivated die ● Low forward voltage drop ● High surge capability ● Low leakage current ● Normal and Reverse polarity ● Metric and UNF threads available | NAINA | | ||
35,40,and 60 Amp Power Silicon Rectifier Diodes 35,40,and 60 Amp Power Silicon Rectifier Diodes | IRF | | ||
DEVICE HIGH POWER STANDARD Features • High Surge Capability • Types up to 600 V VRRM | AMERICASEMI | | ||
Silicon Standard Recovery Diode Features • High Surge Capability • Types from 50 V to 200 V VRRM • Not ESD Sensitive | GENESIC | | ||
High Surge Capability Features • High Surge Capability • Types from 50 V to 200 V VRRM • Not ESD Sensitive | GENESIC | | ||
DEVICE HIGH POWER STANDARD Features • High Surge Capability • Types up to 600 V VRRM | AMERICASEMI | | ||
SILICON POWER RECTIFIER Silicon Power Rectifier ● Low Forward Voltage ● Glass to Metal Seal Construction ● Glass Passivated Die ● VRRM to 1600V ● 1050 Amps Surge Rating | Microsemi 美高森美 | | ||
SILICON POWER RECTIFIER Silicon Power Rectifier ● Low Forward Voltage ● Glass to Metal Seal Construction ● Glass Passivated Die ● VRRM to 1600V ● 1050 Amps Surge Rating | Microsemi 美高森美 | | ||
Power Silicon Rectifier Diodes, 35 A/40 A/60 A DESCRIPTION/FEATURES • Low leakage current series • Good surge current capability up to 1000 A • Can be supplied to meet stringent military, aerospace and other high reliability requirements • Compliant to RoHS directive 2002/95/EC | VishayVishay Siliconix 威世威世科技公司 | | ||
35,40,and 60 Amp Power Silicon Rectifier Diodes 35,40,and 60 Amp Power Silicon Rectifier Diodes | IRF | | ||
SILICON POWER RECTIFIER Silicon Power Rectifier ● Low Forward Voltage ● Glass to Metal Seal Construction ● Glass Passivated Die ● VRRM to 1600V ● 1050 Amps Surge Rating | Microsemi 美高森美 | | ||
SILICON POWER RECTIFIER Silicon Power Rectifier ● Low Forward Voltage ● Glass to Metal Seal Construction ● Glass Passivated Die ● VRRM to 1600V ● 1050 Amps Surge Rating | Microsemi 美高森美 | | ||
Power Silicon Rectifier Diodes, 35 A/40 A/60 A DESCRIPTION/FEATURES • Low leakage current series • Good surge current capability up to 1000 A • Can be supplied to meet stringent military, aerospace and other high reliability requirements • Compliant to RoHS directive 2002/95/EC | VishayVishay Siliconix 威世威世科技公司 | | ||
35,40,and 60 Amp Power Silicon Rectifier Diodes 35,40,and 60 Amp Power Silicon Rectifier Diodes | IRF | | ||
SILICON POWER RECTIFIER Silicon Power Rectifier ● Low Forward Voltage ● Glass to Metal Seal Construction ● Glass Passivated Die ● VRRM to 1600V ● 1050 Amps Surge Rating | Microsemi 美高森美 | | ||
SILICON POWER RECTIFIER Silicon Power Rectifier ● Low Forward Voltage ● Glass to Metal Seal Construction ● Glass Passivated Die ● VRRM to 1600V ● 1050 Amps Surge Rating | Microsemi 美高森美 | | ||
Power Silicon Rectifier Diodes, 35 A/40 A/60 A DESCRIPTION/FEATURES • Low leakage current series • Good surge current capability up to 1000 A • Can be supplied to meet stringent military, aerospace and other high reliability requirements • Compliant to RoHS directive 2002/95/EC | VishayVishay Siliconix 威世威世科技公司 | | ||
35,40,and 60 Amp Power Silicon Rectifier Diodes 35,40,and 60 Amp Power Silicon Rectifier Diodes | IRF | | ||
SILICON POWER RECTIFIER Silicon Power Rectifier ● Low Forward Voltage ● Glass to Metal Seal Construction ● Glass Passivated Die ● VRRM to 1600V ● 1050 Amps Surge Rating | Microsemi 美高森美 | | ||
Power Silicon Rectifier Diodes, 35 A/40 A/60 A DESCRIPTION/FEATURES • Low leakage current series • Good surge current capability up to 1000 A • Can be supplied to meet stringent military, aerospace and other high reliability requirements • Compliant to RoHS directive 2002/95/EC | VishayVishay Siliconix 威世威世科技公司 | | ||
35,40,and 60 Amp Power Silicon Rectifier Diodes 35,40,and 60 Amp Power Silicon Rectifier Diodes | IRF | | ||
silicon diode SILICON DIODE | ETCList of Unclassifed Manufacturers 未分类制造商 | | ||
silicon diode SILICON DIODE | ETCList of Unclassifed Manufacturers 未分类制造商 | | ||
SILICON POWER RECTIFIER Silicon Power Rectifier ● Glass Passivated Die ● 800A surge rating ● Glass to metal seal construction ● VRRM to 1200V | Microsemi 美高森美 | | ||
electrical ratings and specifications Silicon Power Rectifiers 18 AMP - DO5 | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | ||
Silicon Power Rectifiers Silicon Power Rectifiers 18 AMP - DO5 | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | ||
electrical ratings and specifications Silicon Power Rectifiers 18 AMP - DO5 | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | ||
Silicon Power Rectifiers Silicon Power Rectifiers 18 AMP - DO5 | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | ||
SILICON POWER RECTIFIER Silicon Power Rectifier ● Glass Passivated Die ● 800A surge rating ● Glass to metal seal construction ● VRRM to 1200V | Microsemi 美高森美 | | ||
electrical ratings and specifications Silicon Power Rectifiers 18 AMP - DO5 | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | ||
electrical ratings and specifications Silicon Power Rectifiers 18 AMP - DO5 | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | |
1N21产品属性
- 类型
描述
- 型号
1N21
- 功能描述
1N2113
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ASI |
24+ |
NA/ |
23 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
|||
NJS |
1342+ |
DO35 |
7 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
KDS/大真空 |
25+ |
SMD |
300000 |
KDS/大真空原装正品1N218432CC0E即刻询购立享优惠#长期有排单订 |
|||
NJS |
24+ |
DO35 |
8500 |
只做原装正品假一赔十为客户做到零风险!! |
|||
SYL |
25+ |
1 |
|||||
NJSEMI |
23+ |
NA |
1410 |
专做原装正品,假一罚百! |
|||
NJS |
2025+ |
DO35 |
5000 |
原装进口价格优 请找坤融电子! |
|||
MA/COM |
22+ |
NA |
12800 |
只做原装,价格优惠,长期供货。 |
|||
NO |
24+ |
NO |
20 |
||||
MICROSEMI/美高森美 |
23+ |
5000 |
原厂授权代理,海外优势订货渠道。可提供大量库存,详 |
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1N21数据表相关新闻
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1EDN7550UXTSA1
2023-7-201EDI40I12AFXUMA1
1EDI40I12AFXUMA1 栅极驱动IC
2023-3-11EDI40I12AFXUMA1 全新原装正品 现货
1EDI40I12AFXUMA1
2022-5-161N4001
1N4001，当天发货0755-82732291全新原装现货或门市自取.
2020-9-161N4007
1N4007 ，全新原装当天发货或门市自取0755-82732291.
2019-9-21N4007RLG公司大量全新现货随时可以发货
正品
2019-3-1
DdatasheetPDF页码索引
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