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1N1190价格
参考价格：￥31.4345
型号：1N1190 品牌：GeneSiC 备注：这里有1N1190多少钱，2025年最近7天走势，今日出价，今日竞价，1N1190批发/采购报价，1N1190行情走势销售排行榜，1N1190报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
1N1190 | Military Silicon Power Rectifier HIGH RELIABILITY SILICON POWER RECTIFIER Qualified per MIL-PRF-19500/297 • Glass Passivated Die • Glass to Metal Seal Construction • 500 Amps Surge Rating • VRRM to 1000 Volts | Microsemi 美高森美 |   | |
1N1190 | Silicon Power Rectifier Silicon Power Rectifier • Glass Passivated Die • 800A surge rating • Glass to metal construction • VRRM to 1000V | Microsemi 美高森美 | | |
1N1190 | Power Silicon Rectifier Diodes, 35 A/40 A/60 A DESCRIPTION/FEATURES • Low leakage current series • Good surge current capability up to 1000 A • Can be supplied to meet stringent military, aerospace and other high reliability requirements • Compliant to RoHS directive 2002/95/EC | VishayVishay Siliconix 威世威世科技公司 | | |
1N1190 | Silicon-Power Rectifiers Silicon-Power Rectifiers • Nominal current 35 A • Repetitive peak reverse voltage 50 ~ 1000 V • Metal case DO-5 • Weight approx. 6 g • Standard polarity: Cathode to stud • Index R: Anode to stud • Standard packaging: bulk | Diotec 德欧泰克 | | |
1N1190 | 35,40,and 60 Amp Power Silicon Rectifier Diodes 35,40,and 60 Amp Power Silicon Rectifier Diodes | IRF | | |
1N1190 | Standard Recovery Diode, 35A Features • Glass passivated die • Low forward voltage drop • High surge capability • Low leakage current • Normal and Reverse polarity • Metric and UNF threads available | NAINA | | |
1N1190 | Silicon Power Rectifier Silicon Power Rectifier • Glass Passivated Die • 800A surge rating • Glass to metal construction • VRRM to 1000V | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | |
1N1190 | STANDARD RECOVERY RECTIFIER STANDARD RECOVERY RECTIFIER | DIGITRON | | |
1N1190 | Silicon Standard Recovery Diode 文件：705.27 Kbytes Page：3 Pages | GENESIC | | |
1N1190 | 包装：散装 描述：STANDARD RECTIFIER 分立半导体产品 二极管 - 整流器 - 单 | Microchip 微芯科技 | | |
1N1190 | 封装/外壳：DO-203AB，DO-5，接线柱 包装：卷带（TR） 描述：DIODE GEN PURP 600V 35A DO5 分立半导体产品 二极管 - 整流器 - 单 | GENESIC | | |
1N1190 | Rectifier Diode Switching 2-Pin 600V, 35A DO-5 Tray | Microchip 微芯科技 | | |
1N1190 | Silicon Standard Recovery Diode 文件：724.43 Kbytes Page：3 Pages | GENESIC | | |
1N1190 | Silicon-Power-Rectifiers 文件：129.13 Kbytes Page：2 Pages | Diotec 德欧泰克 | | |
1N1190 | Silicon Standard Recovery Diode 文件：769.34 Kbytes Page：3 Pages | GENESIC | | |
1N1190 | Power Silicon Rectifier Diodes, 35 A/40 A/60 A 文件：297.27 Kbytes Page：8 Pages | VishayVishay Siliconix 威世威世科技公司 | | |
1N1190 | HIGH RELIABILITY SILICON POWER RECTIFIER 文件：123.92 Kbytes Page：3 Pages | Microsemi 美高森美 | | |
Silicon Power Rectifier Silicon Power Rectifier • Glass Passivated Die • 800A surge rating • Glass to metal construction • VRRM to 1000V | Microsemi 美高森美 | | ||
35,40,and 60 Amp Power Silicon Rectifier Diodes 35,40,and 60 Amp Power Silicon Rectifier Diodes | IRF | | ||
Power Silicon Rectifier Diodes, 35 A/40 A/60 A DESCRIPTION/FEATURES • Low leakage current series • Good surge current capability up to 1000 A • Can be supplied to meet stringent military, aerospace and other high reliability requirements • Compliant to RoHS directive 2002/95/EC | VishayVishay Siliconix 威世威世科技公司 | | ||
STUD MOUNTED POWER RECTIFIERS Silicon Power Rectifier • Glass Passivated Die • 800A surge rating • Glass to metal construction • VRRM to 1000V | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | ||
Si Rectifier Silicon Power Rectifier • Glass Passivated Die • 800A surge rating • Glass to metal construction • VRRM to 1000V | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | ||
Silicon Power Rectifier Silicon Power Rectifier • Glass Passivated Die • 800A surge rating • Glass to metal construction • VRRM to 1000V | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | ||
DEVICE HIGH POWER STANDARD Features • High Surge Capability • Types up to 600 V VRRM | AMERICASEMI | | ||
Silicon Standard Recovery Diode Features • High Surge Capability • Types up to 600 V VRRM • Not ESD Sensitive | GENESIC | | ||
STANDARD RECOVERY RECTIFIER STANDARD RECOVERY RECTIFIER | DIGITRON | | ||
DEVICE HIGH POWER STANDARD Features • High Surge Capability • Types up to 600 V VRRM | AMERICASEMI | | ||
High Surge Capability Features • High Surge Capability • Types up to 600 V VRRM • Not ESD Sensitive | GENESIC | | ||
Military Silicon Power Rectifier HIGH RELIABILITY SILICON POWER RECTIFIER Qualified per MIL-PRF-19500/297 • Glass Passivated Die • Glass to Metal Seal Construction • 500 Amps Surge Rating • VRRM to 1000 Volts | Microsemi 美高森美 | | ||
Power Silicon Rectifier Diodes, 35 A, 40 A, 60 A DESCRIPTION/FEATURES • Low leakage current series • Good surge current capability up to 1000 A • Can be supplied to meet stringent military, aerospace, and other high reliability requirements • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 | VishayVishay Siliconix 威世威世科技公司 | | ||
GERMANIUM PNP TRANSISTORS 文件：2.44311 Mbytes Page：6 Pages | ETCList of Unclassifed Manufacturers 未分类制造商 | | ||
Standard Recovery Diode 文件：263.85 Kbytes Page：2 Pages | ISC 无锡固电 | | ||
Silicon Power Rectifier 文件：132.23 Kbytes Page：2 Pages | Microsemi 美高森美 | | ||
Power Silicon Rectifier Diodes, 35 A/40 A/60 A 文件：297.27 Kbytes Page：8 Pages | VishayVishay Siliconix 威世威世科技公司 | | ||
Standard Recovery Diode, 40A 文件：555.32 Kbytes Page：2 Pages | NAINA | | ||
Silicon Standard Recovery Diode 文件：798.35 Kbytes Page：3 Pages | GENESIC | | ||
Silicon Standard Recovery Diode 文件：798.34 Kbytes Page：3 Pages | GENESIC | | ||
Silicon Standard Recovery Diode 文件：675.82 Kbytes Page：3 Pages | GENESIC | | ||
Silicon Standard Recovery Diode 文件：753.49 Kbytes Page：3 Pages | GENESIC | | ||
Standard Recovery Rectifiers | Navitas 纳微半导体 | | ||
Silicon Standard Recovery Diode 文件：798.34 Kbytes Page：3 Pages | GENESIC | | ||
Silicon Standard Recovery Diode 文件：798.35 Kbytes Page：3 Pages | GENESIC | | ||
Silicon Standard Recovery Diode 文件：675.82 Kbytes Page：3 Pages | GENESIC | | ||
Silicon Standard Recovery Diode 文件：753.49 Kbytes Page：3 Pages | GENESIC | | ||
Standard Recovery Diode 文件：263.85 Kbytes Page：2 Pages | ISC 无锡固电 | | ||
HIGH RELIABILITY SILICON POWER RECTIFIER 文件：123.92 Kbytes Page：3 Pages | Microsemi 美高森美 | | ||
High Surge Capability 文件：705.27 Kbytes Page：3 Pages | GENESIC | | ||
Silicon Standard Recovery Diode 文件：769.34 Kbytes Page：3 Pages | GENESIC | | ||
Standard Recovery Rectifiers | Navitas 纳微半导体 | | ||
Silicon Standard Recovery Diode 文件：724.43 Kbytes Page：3 Pages | GENESIC | | ||
GERMANIUM PNP TRANSISTORS 文件：2.44311 Mbytes Page：6 Pages | ETCList of Unclassifed Manufacturers 未分类制造商 | |
1N1190产品属性
- 类型
描述
- 型号
1N1190
- 功能描述
整流器 600V 35A Std. Recovery
- RoHS
否
- 制造商
Vishay Semiconductors
- 产品
Standard Recovery Rectifiers
- 反向电压
100 V
- 恢复时间
1.2 us
- 正向连续电流
2 A
- 最大浪涌电流
35 A 反向电流
- IR
5 uA
- 安装风格
SMD/SMT
- 封装/箱体
DO-221AC
- 封装
Reel
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IR/MSC |
2023+ |
MODULE |
1539 |
主打螺丝模块系列 |
|||
MICROSEMI |
专业模块 |
MODULE |
8513 |
模块原装主营-可开原型号增税票 |
|||
- |
23+ |
NA |
5000 |
原厂授权代理,海外优势订货渠道。可提供大量库存,详 |
|||
24+ |
N/A |
64000 |
一级代理-主营优势-实惠价格-不悔选择 |
||||
MSC |
25+ |
20 |
公司现货 |
||||
IR |
1215+ |
DO-5 |
150000 |
全新原装,绝对正品,公司大量现货供应. |
|||
MICROCHIP |
23+ |
7300 |
专注配单,只做原装进口现货 |
||||
VishayIR |
24+ |
DO-5Stud(DO-203AB |
95 |
||||
GeneSiC |
25+ |
电联咨询 |
7800 |
公司现货,提供拆样技术支持 |
|||
MICROSEMI |
22+ |
螺丝 |
8000 |
原装正品支持实单 |
1N1190芯片相关品牌
1N1190规格书下载地址
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1N1190数据表相关新闻
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2023-3-11EDI40I12AFXUMA1 全新原装正品 现货
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正品
2019-3-1
DdatasheetPDF页码索引
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