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1N1190价格
参考价格：￥31.4345
型号：1N1190 品牌：GeneSiC 备注：这里有1N1190多少钱，2025年最近7天走势，今日出价，今日竞价，1N1190批发/采购报价，1N1190行情走势销售排行榜，1N1190报价。| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
1N1190 | MilitarySiliconPowerRectifier HIGHRELIABILITYSILICONPOWERRECTIFIER QualifiedperMIL-PRF-19500/297 •GlassPassivatedDie •GlasstoMetalSealConstruction •500AmpsSurgeRating •VRRMto1000Volts | MicrosemiMicrosemi Corporation 美高森美美高森美公司 |  |   |
1N1190 | SiliconPowerRectifier SiliconPowerRectifier •GlassPassivatedDie •800Asurgerating •Glasstometalconstruction •VRRMto1000V | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | | |
1N1190 | 35,40,and60AmpPowerSiliconRectifierDiodes 35,40,and60AmpPowerSiliconRectifierDiodes | IRF International Rectifier |  | |
1N1190 | PowerSiliconRectifierDiodes,35A/40A/60A DESCRIPTION/FEATURES •Lowleakagecurrentseries •Goodsurgecurrentcapabilityupto1000A •Canbesuppliedtomeetstringentmilitary,aerospaceandotherhighreliabilityrequirements •ComplianttoRoHSdirective2002/95/EC | VishayVishay Siliconix 威世科技威世科技半导体 |  | |
1N1190 | SiliconPowerRectifier SiliconPowerRectifier •GlassPassivatedDie •800Asurgerating •Glasstometalconstruction •VRRMto1000V | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 |  | |
1N1190 | Silicon-PowerRectifiers Silicon-PowerRectifiers •Nominalcurrent35A •Repetitivepeakreversevoltage50~1000V •MetalcaseDO-5 •Weightapprox.6g •Standardpolarity:Cathodetostud •IndexR:Anodetostud •Standardpackaging:bulk | DiotecDiotec Semiconductor 德欧泰克 |  | |
1N1190 | StandardRecoveryDiode,35A Features •Glasspassivateddie •Lowforwardvoltagedrop •Highsurgecapability •Lowleakagecurrent •NormalandReversepolarity •MetricandUNFthreadsavailable | NAINA Naina Semiconductor ltd. |  | |
1N1190 | STANDARDRECOVERYRECTIFIER STANDARDRECOVERYRECTIFIER | DIGITRON Digitron Semiconductors |  | |
1N1190 | SiliconStandardRecoveryDiode 文件：705.27 Kbytes Page：3 Pages | GENESIC GeneSiC Semiconductor, Inc. |  | |
1N1190 | 包装：散装 描述：STANDARD RECTIFIER 分立半导体产品 二极管 - 整流器 - 单 | MicrochipMicrochip Technology 微芯科技微芯科技股份有限公司 |  | |
1N1190 | 封装/外壳：DO-203AB，DO-5，接线柱 包装：卷带（TR） 描述：DIODE GEN PURP 600V 35A DO5 分立半导体产品 二极管 - 整流器 - 单 | GENESIC GeneSiC Semiconductor, Inc. | | |
1N1190 | SiliconStandardRecoveryDiode 文件：724.43 Kbytes Page：3 Pages | GENESIC GeneSiC Semiconductor, Inc. | | |
1N1190 | SiliconStandardRecoveryDiode 文件：769.34 Kbytes Page：3 Pages | GENESIC GeneSiC Semiconductor, Inc. | | |
1N1190 | Silicon-Power-Rectifiers 文件：129.13 Kbytes Page：2 Pages | DiotecDiotec Semiconductor 德欧泰克 | | |
1N1190 | PowerSiliconRectifierDiodes,35A/40A/60A 文件：297.27 Kbytes Page：8 Pages | VishayVishay Siliconix 威世科技威世科技半导体 | | |
1N1190 | HIGHRELIABILITYSILICONPOWERRECTIFIER 文件：123.92 Kbytes Page：3 Pages | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | | |
STUDMOUNTEDPOWERRECTIFIERS SiliconPowerRectifier •GlassPassivatedDie •800Asurgerating •Glasstometalconstruction •VRRMto1000V | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | | | |
SiRectifier SiliconPowerRectifier •GlassPassivatedDie •800Asurgerating •Glasstometalconstruction •VRRMto1000V | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | | | |
SiliconPowerRectifier SiliconPowerRectifier •GlassPassivatedDie •800Asurgerating •Glasstometalconstruction •VRRMto1000V | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | | | |
PowerSiliconRectifierDiodes,35A/40A/60A DESCRIPTION/FEATURES •Lowleakagecurrentseries •Goodsurgecurrentcapabilityupto1000A •Canbesuppliedtomeetstringentmilitary,aerospaceandotherhighreliabilityrequirements •ComplianttoRoHSdirective2002/95/EC | VishayVishay Siliconix 威世科技威世科技半导体 | | | |
35,40,and60AmpPowerSiliconRectifierDiodes 35,40,and60AmpPowerSiliconRectifierDiodes | IRF International Rectifier | | | |
SiliconPowerRectifier SiliconPowerRectifier •GlassPassivatedDie •800Asurgerating •Glasstometalconstruction •VRRMto1000V | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | | | |
STANDARDRECOVERYRECTIFIER STANDARDRECOVERYRECTIFIER | DIGITRON Digitron Semiconductors | | | |
SiliconStandardRecoveryDiode Features •HighSurgeCapability •Typesupto600VVRRM •NotESDSensitive | GENESIC GeneSiC Semiconductor, Inc. | | | |
DEVICEHIGHPOWERSTANDARD Features •HighSurgeCapability •Typesupto600VVRRM | AMERICASEMI America Semiconductor, LLC |  | | |
HighSurgeCapability Features •HighSurgeCapability •Typesupto600VVRRM •NotESDSensitive | GENESIC GeneSiC Semiconductor, Inc. | | | |
DEVICEHIGHPOWERSTANDARD Features •HighSurgeCapability •Typesupto600VVRRM | AMERICASEMI America Semiconductor, LLC | | | |
MilitarySiliconPowerRectifier HIGHRELIABILITYSILICONPOWERRECTIFIER QualifiedperMIL-PRF-19500/297 •GlassPassivatedDie •GlasstoMetalSealConstruction •500AmpsSurgeRating •VRRMto1000Volts | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | | | |
PowerSiliconRectifierDiodes,35A,40A,60A DESCRIPTION/FEATURES •Lowleakagecurrentseries •Goodsurgecurrentcapabilityupto1000A •Canbesuppliedtomeetstringentmilitary,aerospace,andotherhighreliabilityrequirements •Materialcategorization:Fordefinitionsofcompliancepleaseseewww.vishay.com/doc?99912 | VishayVishay Siliconix 威世科技威世科技半导体 | | | |
StandardRecoveryDiode,40A 文件：555.32 Kbytes Page：2 Pages | NAINA Naina Semiconductor ltd. | | | |
StandardRecoveryDiode 文件：263.85 Kbytes Page：2 Pages | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 |  | | |
SiliconStandardRecoveryDiode 文件：798.35 Kbytes Page：3 Pages | GENESIC GeneSiC Semiconductor, Inc. | | | |
SiliconStandardRecoveryDiode 文件：798.34 Kbytes Page：3 Pages | GENESIC GeneSiC Semiconductor, Inc. | | | |
SiliconStandardRecoveryDiode 文件：675.82 Kbytes Page：3 Pages | GENESIC GeneSiC Semiconductor, Inc. | | | |
SiliconPowerRectifier 文件：132.23 Kbytes Page：2 Pages | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | | | |
PowerSiliconRectifierDiodes,35A/40A/60A 文件：297.27 Kbytes Page：8 Pages | VishayVishay Siliconix 威世科技威世科技半导体 | | | |
SiliconStandardRecoveryDiode 文件：753.49 Kbytes Page：3 Pages | GENESIC GeneSiC Semiconductor, Inc. | | | |
GERMANIUMPNPTRANSISTORS 文件：2.44311 Mbytes Page：6 Pages | ETC1List of Unclassifed Manufacturers etc未分类制造商未分类制造商 |  | | |
SiliconStandardRecoveryDiode 文件：798.34 Kbytes Page：3 Pages | GENESIC GeneSiC Semiconductor, Inc. | | | |
SiliconStandardRecoveryDiode 文件：798.35 Kbytes Page：3 Pages | GENESIC GeneSiC Semiconductor, Inc. | | | |
SiliconStandardRecoveryDiode 文件：675.82 Kbytes Page：3 Pages | GENESIC GeneSiC Semiconductor, Inc. | | | |
StandardRecoveryDiode 文件：263.85 Kbytes Page：2 Pages | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | | |
SiliconStandardRecoveryDiode 文件：753.49 Kbytes Page：3 Pages | GENESIC GeneSiC Semiconductor, Inc. | | | |
HighSurgeCapability 文件：705.27 Kbytes Page：3 Pages | GENESIC GeneSiC Semiconductor, Inc. | | | |
SiliconStandardRecoveryDiode 文件：769.34 Kbytes Page：3 Pages | GENESIC GeneSiC Semiconductor, Inc. | | | |
HIGHRELIABILITYSILICONPOWERRECTIFIER 文件：123.92 Kbytes Page：3 Pages | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | | | |
SiliconStandardRecoveryDiode 文件：724.43 Kbytes Page：3 Pages | GENESIC GeneSiC Semiconductor, Inc. | | | |
GERMANIUMPNPTRANSISTORS 文件：2.44311 Mbytes Page：6 Pages | ETC1List of Unclassifed Manufacturers etc未分类制造商未分类制造商 | | |
1N1190产品属性
- 类型
描述
- 型号
1N1190
- 功能描述
整流器 600V 35A Std. Recovery
- RoHS
否
- 制造商
Vishay Semiconductors
- 产品
Standard Recovery Rectifiers
- 反向电压
100 V
- 恢复时间
1.2 us
- 正向连续电流
2 A
- 最大浪涌电流
35 A 反向电流
- IR
5 uA
- 安装风格
SMD/SMT
- 封装/箱体
DO-221AC
- 封装
Reel
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
MICROSEMI |
专业模块 |
MODULE |
8513 |
模块原装主营-可开原型号增税票 |
|||
VISHAY |
18+ |
DO-5 |
85600 |
保证进口原装可开17%增值税发票 |
|||
MSC |
2007/2008 |
20 |
公司现货 |
||||
原厂 |
2023+ |
模块 |
600 |
专营模块,继电器,公司原装现货 |
|||
IR |
专业铁帽 |
DO-5 |
1700 |
原装铁帽专营,代理渠道量大可订货 |
|||
GeneSiC Semiconductor |
25+ |
DO-5 |
9350 |
独立分销商 公司只做原装 诚心经营 免费试样正品保证 |
|||
IR |
22+ |
螺丝 |
8000 |
原装正品支持实单 |
|||
IR |
24+ |
DO-5 |
12 |
||||
IR/MSC |
2023+ |
MODULE |
1334 |
主打螺丝模块系列 |
|||
VishayPCS |
新 |
9 |
全新原装 货期两周 |
1N1190芯片相关品牌
1N1190规格书下载地址
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1N1190数据表相关新闻
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2019-3-1
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